MOSFET Modeling & BSIM3 User's Guide 2002 ed. [Kõva köide]

  • Formaat: Hardback, 462 pages, kõrgus x laius x paksus: 234x156x26 mm, kaal: 1880 g, XVI, 462 p., 1 Hardback
  • Ilmumisaeg: 30-Sep-1999
  • Kirjastus: Springer
  • ISBN-10: 0792385756
  • ISBN-13: 9780792385752
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  • Formaat: Hardback, 462 pages, kõrgus x laius x paksus: 234x156x26 mm, kaal: 1880 g, XVI, 462 p., 1 Hardback
  • Ilmumisaeg: 30-Sep-1999
  • Kirjastus: Springer
  • ISBN-10: 0792385756
  • ISBN-13: 9780792385752
Teised raamatud teemal:
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Contents v
Preface xiii
Introduction
1(12)
Compact MOSFET Modeling for Circuit Simulation
1(4)
The Trends of Compact MOSFET Modeling
5(8)
Modeling new physical effects
5(1)
High frequency (HF) analog compact models
6(1)
Simulation robustness and efficiency
7(1)
Model standardization
8(1)
References
8(5)
Significant Physical Effects In Modern MOSFETs
13(52)
MOSFET Classification and Operation
13(5)
Strong inversion region (Vgs>Vth)
17(1)
Weak and moderate inversion or the subthreshold region
18(1)
Effects Impacting the Threshold Voltage
18(12)
Non-uniform doping effects
19(4)
Normal short channel effects
23(1)
Reverse short channel effects
23(2)
Normal narrow-width effects
25(2)
Reverse narrow-width effects
27(1)
Body bias effect and bulk charge effect
28(2)
Channel Charge Theory
30(7)
Accumulation
33(1)
Depletion
33(1)
Inversion
34(3)
Carrier Mobility
37(2)
Velocity Saturation
39(2)
Channel Length Modulation
41(3)
Substrate Current Due to Impact Ionization
44(4)
Polysilicon Gate Depletion
48(3)
Velocity Overshoot Effects
51(2)
Self-heating Effect
53(2)
Inversion Layer Quantization Effects
55(10)
References
57(8)
Threshold Voltage Model
65(40)
Threshold Voltage Model for Long Channel Devices
65(2)
Threshold Voltage Model with Short Channel Effects
67(10)
Charge sharing model
68(3)
Quasi 2-D models for drain induced barrier lowering effect
71(6)
Narrow Width Effect Model
77(3)
Threshold Voltage Model in BSIM3v3
80(12)
Modeling of the vertical non-uniform doping effects
80(3)
Modeling of the RSCE due to lateral non-uniform channel doping
83(2)
Modeling of the short channel effect due to drain induced barrier lowering
85(3)
Modeling of the narrow width effects
88(2)
Complete Vth model in BSIM3v3
90(2)
Helpful Hints
92(13)
References
101(4)
I-V Model
105(38)
Essential Equations Describing the I-V Characteristics
105(1)
Channel Charge Density Model
106(8)
Channel charge model in the strong inversion region
106(1)
Channel charge model in the subthreshold region
107(2)
Continuous channel charge model of BSIMv3
109(3)
Continuous channel charge model with the effect of Vds
112(2)
Mobility Model
114(3)
Piece-wise mobility models
114(2)
Mobility models in BSIM3v3
116(1)
I-V Model in the Strong Inversion Region
117(7)
I-V model in the linear (triode) region
117(1)
Drain voltage at current saturation, Vdsat
118(2)
Current and output resistance in the saturation region
120(4)
Subthreshold I-V Model
124(1)
Single Equation I-V model of BSIMv3
125(4)
Polysilicon Gate Depletion Effect
129(1)
Helpful Hints
130(13)
References
140(3)
Capacitance Model
143(68)
Capacitance Components in a MOSFET
144(1)
Intrinsic Capacitance Model
145(16)
Meyer model
145(6)
Shortcomings of the Meyer model
151(3)
Charge-based capacitance model
154(7)
Extrinsic Capacitance Model
161(2)
Capacitance Model of BSIM3v3
163(34)
Long channel capacitance model (capMod=0)
164(6)
Short channel capacitance (capMod=1)
170(8)
Single-equation short channel capacitance model (capMod=2)
178(8)
Short channel capacitance model with quantization effect (capMod=3)
186(11)
Channel Length/Width in Capacitance Model
197(1)
Helpful Hints
198(13)
References
207(4)
Substrate Current Model
211(8)
Substrate Current Generation
211(1)
Substrate Current Model in BSIM3v3
212(3)
Helpful Hints
215(4)
References
217(2)
Noise Model
219(24)
The Physical Mechanisms of Flicker (1/f) Noise
219(1)
The Physical Mechanism of Thermal Noise
220(1)
Flicker Noise Models in BSIM3v3
221(8)
SPICE2 flicker noise model (noiMod=1)
221(1)
Unified flicker noise model (noiMod=2)
222(7)
Thermal Noise Models in BSIM3v3
229(4)
Modified SPICE2 thermal noise model (noiMod=1)
230(1)
BSIM3 thermal noise model (noiMod=2)
230(3)
Helpful Hints
233(10)
References
240(3)
Source/Drain Parasitics Model
243(20)
Parasitic Components in a MOSFET
243(1)
Models of Parasitic Components in BSIM3v3
244(10)
Source and drain series resistances
244(4)
DC model of the source/drain diodes
248(2)
Capacitance model of the source/bulk and drain/bulk diodes
250(4)
Helpful Hints
254(9)
References
261(2)
Temperature Dependence Model
263(18)
Temperature Effects in a MOSFET
263(2)
Temperature Dependence Models in BSIM3v3
265(5)
Comparison of the Temperature-Effect Models with Measured Data
270(6)
Helpful Hints
276(5)
References
279(2)
Non-quasi Static (NQS) Model
281(22)
The Necessity of Modeling NQS Effects
281(3)
The NQS Model in BSIM3v3
284(8)
Physics basis and model derivation
284(5)
The BSIM3 NQS Model
289(3)
Test Results of the NQS Model
292(5)
Helpful Hints
297(6)
References
301(2)
BSIM3v3 Model Implementation
303(24)
General Structure of BSIM3v3 Model Implementation
303(3)
Robustness Consideration in the Implementation of BSIM3v3
306(9)
Testing of Model Implementation
315(2)
Model Selectors of BSIM3v3
317(2)
Helpful Hints
319(8)
References
324(3)
Model Testing
327(26)
Requirements for a MOSFET Model in Circuit Simulation
327(2)
Benchmark Tests
329(4)
Benchmark Test Results
333(17)
Helpful Hints
350(3)
References
351(2)
Model Parameter Extraction
353(22)
Overview of Model Parameter Extraction
353(2)
Parameter Extraction for BSIM3v3
355(12)
Optimization and extraction strategy
355(1)
Extraction routines
355(12)
Binning Methodology
367(1)
Recommended Value Range of the Model Parameters
368(4)
Automated Parameter Extraction Tool
372(3)
References
373(2)
RF and Other Compact Model Applications
375(34)
RF Modeling
375(18)
Modeling of the gate resistance
376(7)
Modeling the substrate network
383(2)
A RF MOSFET model based on BSIM3v3 for GHz communication IC's
385(8)
Statistical Modeling
393(6)
Technology Extrapolation and Prediction Using BSIM3 Model
399(10)
References
406(3)
Appendix A BSIM3v3 Parameter Table 409(12)
A.1 Model control parameters
409(1)
A.2 Process parameters
410(1)
A.3 Parameters for Vth model
410(1)
A.4 Parameters for I-V model
411(3)
A.5 Parameters for capacitance model
414(1)
A.6 Parameters for effective channel length/width in I-V model
415(1)
A.7 Parameters for effective channel length/width in C-V model
416(1)
A.8 Parameters for substrate current model
417(1)
A.9 Parameters for noise models
417(1)
A.10 Parameters for models of parasitic components
418(1)
A.11 Parameters for models of temperature effects
419(1)
A.12 Parameters for NQS model
420(1)
Appendix B BSIM3v3 Model Equations 421(28)
B.1 Vth equations
421(1)
B.2 Effective Vgs-Vth
422(1)
B.3 Mobility
423(1)
B.4 Drain saturation voltage
423(1)
B.5 Effective Vds
424(1)
B.6 Drain current expression
424(1)
B.7 Substrate current
425(1)
B.8 Polysilicon depletion effect
426(1)
B.9 Effective channel length and width
426(1)
B.10 Drain/Source resistance
426(1)
B.11 Capacitance model equations
426(14)
B.12 Noise model equations
440(3)
B.13 DC model of the source/drain diodes
443(1)
B.14 Capacitance model of the source/bulk and drain/bulk diodes
444(1)
B.15 Temperature effects
445(2)
B.16 NQS model equations
447(1)
B.17 A note on the poly-gate depletion effect
448(1)
Appendix C Enhancements and Changes in BSIM3v3.1 versus BSIM3v3.0 449(6)
C.1 Enhancements
449(1)
C.2 Detailed changes
449(6)
Appendix D Enhancements and Changes in BSIM3v3.2 versus BSIM3v3.1 455(4)
D.1 Enhancements
455(1)
D.2 Detailed changes
456(3)
Index 459


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