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Carbon Nanotube Based VLSI Interconnects: Analysis and Design 2015 ed. [Pehme köide]

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  • Formaat: Paperback / softback, 86 pages, kõrgus x laius: 235x155 mm, kaal: 454 g, 57 Illustrations, black and white; XI, 86 p. 57 illus., 1 Paperback / softback
  • Sari: SpringerBriefs in Applied Sciences and Technology
  • Ilmumisaeg: 11-Nov-2014
  • Kirjastus: Springer, India, Private Ltd
  • ISBN-10: 8132220463
  • ISBN-13: 9788132220466
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Carbon Nanotube Based VLSI Interconnects: Analysis and Design 2015 ed.Suurem pilt
  • Formaat: Paperback / softback, 86 pages, kõrgus x laius: 235x155 mm, kaal: 454 g, 57 Illustrations, black and white; XI, 86 p. 57 illus., 1 Paperback / softback
  • Sari: SpringerBriefs in Applied Sciences and Technology
  • Ilmumisaeg: 11-Nov-2014
  • Kirjastus: Springer, India, Private Ltd
  • ISBN-10: 8132220463
  • ISBN-13: 9788132220466
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9788132220466.html
Märksõnad:
The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.
1 Interconnects
1(16)
1.1 Introduction
1(2)
1.2 Types of Interconnects
3(1)
1.3 Evolution of Interconnects
4(10)
1.3.1 Aluminum Interconnects
4(1)
1.3.2 Reason Behind the Replacement of Al by Cu
5(1)
1.3.3 Demerits of Cu Interconnects
6(1)
1.3.4 Demands in Future Interconnects
6(8)
1.4 Carbon Nanotubes: The Ultimate Choice
14(3)
2 Carbon Nanotube: Properties and Applications
17(22)
2.1 Introduction
17(1)
2.2 Structure and Types of Carbon Nanotubes
18(2)
2.3 Electronic Band Structure of CNTs
20(6)
2.3.1 Band Structure of CNTs from Graphene
22(3)
2.3.2 Metallicity and Semiconducting Properties of Zigzag CNTs
25(1)
2.4 Properties of CNTs
26(2)
2.4.1 Electrical Conductivity
26(1)
2.4.2 Strength and Elasticity
26(1)
2.4.3 Thermal Conductivity and Expansion
27(1)
2.4.4 Field Emission
27(1)
2.4.5 Aspect Ratio
27(1)
2.4.6 Absorbent
28(1)
2.5 Production of CNTs
28(2)
2.5.1 Arc Discharge Method
28(1)
2.5.2 Laser Method
29(1)
2.5.3 Chemical Vapor Deposition
29(1)
2.5.4 Ball Milling
30(1)
2.5.5 Other Methods
30(1)
2.6 Purification of CNTs
30(2)
2.6.1 Gas Phase
31(1)
2.6.2 Liquid Phase
31(1)
2.6.3 Intercalation
31(1)
2.7 Application of CNTs
32(7)
2.7.1 Structural
32(1)
2.7.2 Electromagnetic
33(1)
2.7.3 Electroacoustic
33(1)
2.7.4 Chemical
34(1)
2.7.5 Mechanical
35(1)
2.7.6 Optical
35(1)
2.7.7 Electrical Circuits
36(1)
2.7.8 Interconnects
36(1)
2.7.9 Transistors
36(3)
3 Modeling of Carbon Nanotube Interconnects
39(18)
3.1 Introduction
39(1)
3.2 Analytical Models: A Technical Review
39(10)
3.2.1 Luttinger Liquid Theory Based Model
40(1)
3.2.2 Electron Transport Theory Based Model
40(2)
3.2.3 Models Based on Physical Parameters of CNTs
42(1)
3.2.4 Diameter Dependent Modeling of CNT Interconnects
43(1)
3.2.5 Models Based on Process Induced Parameters
44(1)
3.2.6 Compact Physical Models of SWNT and MWNT Interconnects
44(2)
3.2.7 Performance Comparison of SWNT Bundles and MWNT Interconnect Models
46(1)
3.2.8 CNT Interconnect Models for FPGA Applications
46(1)
3.2.9 CNT Interconnect Models for Crosstalk Analysis
47(2)
3.2.10 Modeling of Mixed CNT Bundle Interconnects
49(1)
3.3 Geometry and Equivalent RLC Model of CNT Interconnect
49(8)
3.3.1 SWNT Interconnect
49(2)
3.3.2 DWNT Interconnect
51(1)
3.3.3 MWNT Interconnect
52(1)
3.3.4 SWNT Bundle Interconnect
53(2)
3.3.5 DWNT Bundle Interconnect
55(2)
4 Crosstalk and Delay Analysis
57(12)
4.1 Introduction
57(1)
4.2 Simulation Setup
58(2)
4.2.1 Motivation Behind Using CMOS Driver
58(1)
4.2.2 Simulation Setup Using Capacitively Coupled Three-Line Bus Architecture
59(1)
4.3 Crosstalk Induced Delay of Bundled SWNT and DWNT Interconnects
60(2)
4.4 Crosstalk Induced Delay of Bundled SWNT and Single MWNT Interconnects
62(4)
4.5 Crosstalk Induced Delay of Bundled SWNT, Bundled DWNT, and Single MWNT Interconnects
66(3)
5 Mixed Carbon Nanotube Bundle
69(10)
5.1 Introduction
69(1)
5.2 Proposed MCB Topologies
70(1)
5.3 ESC Model of MCB Interconnects
71(2)
5.4 Performance Analysis of MCB Based Interconnects
73(6)
5.4.1 Propagation Delay and Power Dissipation of MCB Topologies
73(2)
5.4.2 Crosstalk Induced Delay of MCB Topologies
75(4)
References 79
Brajesh Kumar Kaushik is currently working as Associate Professor in Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India. Dr. Kaushik has completed his PhD from Indian Institute of Technology Roorkee in 2007. His research interests include Signal Integrity, Propagation Delay, and Power Dissipation of VLSI Interconnects; Low Power VLSI Design; Electronic Design Automation (EDA)-Circuit and Systems-CAD. Dr. Kaushik has authored more than 60 papers in peer reviewed international journals and over 80 papers in international Conferences. He has also authored many book chapters, which includes 3 chapters in Springer books. Dr. Kaushik is also an Editor-in-Chief of VLSI Design & Communication System (VLSICS) and Editor of Journal of Electrical and Electronics Engineering Research (JEEER), Academic Journals and Journal of Engineering, Design and Technology (JEDT), Emerald.

Manoj Kumar Majumder, Research Scholar, is currently pursuing his PhD from Indian Institute of Technology, Roorkee, India. Prior to this, he completed his BTech from Dr. B. C. Roy Engineering College, Durgapur in 2007 and M.Tech from Bengal Engineering and Science University, Shibpur in 2009. He has also worked as lecturer in Department of Electronics and Communication Engineering at Durgapur Institute of Advanced Technology and Management (DIATM), West Bengal. He has one book chapter and several journal and conference publications to his credit.