| Acknowledgements |
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xi | |
| Preface |
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xiii | |
Part
1. Information Storage And The State Of The Art Of Electronic Memories |
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1 | (92) |
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Chapter 1 General Issues Related To Data Storage And Analysis Classification Of Memories And Related Perspectives |
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3 | (10) |
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1.1 Issues arising from the flow of digital information |
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3 | (2) |
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1.2 Current electronic memories and their classification |
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5 | (3) |
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1.3 Memories of the future |
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8 | (5) |
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Chapter 2 State Of The Art Of DRAM, SRAM, Flash, HDD And MRAM Electronic Memories |
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13 | (46) |
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2.1 DRAM volatile memories |
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13 | (6) |
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2.1.1 The operating principle of a MOSFET (metal oxide semiconductor field effect transistor) |
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14 | (3) |
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2.1.2 Operating characteristics of DRAM memories |
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17 | (2) |
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19 | (3) |
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2.3 Non-volatile memories related to CMOS technology |
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22 | (23) |
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2.3.1 Operational characteristics of a floating gate MOSFET |
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22 | (16) |
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38 | (7) |
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2.4 Non-volatile magnetic memories (hard disk drives — HDDs and MRAMs) |
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45 | (11) |
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2.4.1 The discovery of giant magneto resistance at the origin of the spread of hard disk drives |
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46 | (3) |
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49 | (2) |
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2.4.3 Magnetic tunnel junctions |
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51 | (1) |
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2.4.4 Operational characteristics of a hard disk drive (HDD) |
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51 | (3) |
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2.4.5 Characteristics of a magnetic random access memory (MRAM) |
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54 | (2) |
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56 | (3) |
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Chapter 3 Evolution Of SSD Toward FERAM, FEFET, CTM And STT-RAM Memories |
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59 | (34) |
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3.1 Evolution of DRAMs toward ferroelectric FeRAMs |
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60 | (17) |
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3.1.1 Characteristics of a ferroelectric material |
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60 | (3) |
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3.1.2 Principle of an FeRAM memory |
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63 | (4) |
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3.1.3 Characteristics of an FeFET memory |
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67 | (10) |
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3.2 The evolution of Flash memories towards charge trap memories (CTM) |
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77 | (5) |
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3.3 The evolution of magnetic memories (MRAM) toward spin torque transfer memories (STT-RAM) |
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82 | (8) |
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3.3.1 Nanomagnetism and experimental implications |
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83 | (1) |
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3.3.2 Characteristics of spin torque transfer |
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84 | (4) |
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3.3.3 Recent evolution with use of perpendicular magnetic anisotropic materials |
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88 | (2) |
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90 | (3) |
Part
2. The Emergence Of New Concepts: The Inorganic NEMS, PCRAM, RERAM And Organic Memories |
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93 | (158) |
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Chapter 4 Volatile And Non-Volatile Memories Based On NEMS |
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95 | (28) |
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4.1 Nanoelectromechanical switches with two electrodes |
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96 | (10) |
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4.1.1 NEMS with cantilevers |
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97 | (5) |
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4.1.2 NEMS with suspended bridge |
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102 | (1) |
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4.1.3 Crossed carbon nanotube networks |
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103 | (3) |
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4.2 NEMS switches with three electrodes |
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106 | (15) |
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4.2.1 Cantilever switch elaborated by lithographic techniques |
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107 | (3) |
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4.2.2 Nanoswitches with carbon nanotubes |
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110 | (6) |
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4.2.3 NEMS-FET hybrid memories with a mobile floating gate or mobile cantilever |
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116 | (5) |
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121 | (2) |
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Chapter 5 Non-Volatile Phase-Change Electronic Memories (PCRAM) |
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123 | (42) |
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5.1 Operation of an electronic phase-change memory |
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125 | (9) |
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5.1.1 Composition and functioning of a GST PCRAM |
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125 | (4) |
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5.1.2 The antinomy between the high resistance of the amorphous state and rapid heating |
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129 | (5) |
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5.2 Comparison of physicochemical characteristics of a few phase-change materials |
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134 | (3) |
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5.3 Key factors for optimized performances of PCM memories |
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137 | (25) |
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5.3.1 Influence of cell geometry on the current Im needed for crystal melting |
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138 | (5) |
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5.3.2 Optimization of phase-change alloy composition to improve performance |
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143 | (5) |
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5.3.3 Influence of nanostructuration of the phase-change material |
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148 | (8) |
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5.3.4 Recent techniques for improvement of amorphization and crystallization rates of phase-change materials |
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156 | (4) |
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5.3.5 Problems related to interconnection of PCRAM cells in a 3D crossbar-type architecture |
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160 | (2) |
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162 | (3) |
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Chapter 6 Resistive Memory Systems (RRAM) |
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165 | (36) |
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6.1 Main characteristics of resistive memories |
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168 | (3) |
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169 | (1) |
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170 | (1) |
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6.2 Electrochemical metallization memories |
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171 | (12) |
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174 | (3) |
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6.2.2 Metallization memories with an insulator or a semiconductor |
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177 | (5) |
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6.2.3 Conclusions on metallization memories |
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182 | (1) |
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6.3 Resistive valence change memories (VCM) |
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183 | (15) |
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6.3.1 The first work on resistive memories |
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183 | (2) |
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6.3.2 Resistive valence change memories after the 2000s |
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185 | (1) |
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6.3.3 A perovskite resistive memory (SrZrO3) with better performance than Flash memories |
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186 | (3) |
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6.3.4 Electroforming and resistive switching |
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189 | (6) |
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6.3.5 Hafnium oxide for universal resistive memories9 |
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195 | (3) |
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198 | (3) |
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Chapter 7 Organic And Non-Volatile Electronic Memories |
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201 | (50) |
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7.1 Flash-type organic memories |
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204 | (26) |
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7.1.1 Flexible FG-OFET device with metal floating gate |
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205 | (7) |
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7.1.2 Flexible organic FG-OFET entirely elaborated by spin coating and inkjet printing |
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212 | (4) |
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7.1.3 Flexible OFETs with charge-trap gate dielectrics |
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216 | (5) |
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7.1.4 OFETs with conductive nanoparticles encapsulated in the gate dielectric |
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221 | (5) |
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7.1.5 Redox dielectric OFETs |
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226 | (4) |
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7.2 Resistive organic memories with two contacts |
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230 | (14) |
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7.2.1 Organic memories based on electrochemical metallization |
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232 | (6) |
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7.2.2 Resistive charge-trap organic memories |
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238 | (6) |
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244 | (4) |
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248 | (3) |
| Conclusion |
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251 | (4) |
| Bibliography |
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255 | (30) |
| Index |
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285 | |
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