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Semiconductor Power Devices: Volume 2: Packaging, Thermal aspects, Reliability and Ruggedness Third Edition 2026 [Kõva köide]

  • Formaat: Hardback, 361 pages, kõrgus x laius: 235x155 mm, 170 Illustrations, color; 134 Illustrations, black and white
  • Ilmumisaeg: 01-Jul-2026
  • Kirjastus: Springer Nature Switzerland AG
  • ISBN-10: 3032234883
  • ISBN-13: 9783032234889
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  • Formaat: Hardback, 361 pages, kõrgus x laius: 235x155 mm, 170 Illustrations, color; 134 Illustrations, black and white
  • Ilmumisaeg: 01-Jul-2026
  • Kirjastus: Springer Nature Switzerland AG
  • ISBN-10: 3032234883
  • ISBN-13: 9783032234889
This new edition of the book Semiconductor Power Devices is now divided into two volumes. Volume 2 focuses on Packaging, Cooling, Reliability, and Advanced Design Aspects of Power Devices. Readers will find in-depth coverage of packaging technologies, including conventional and advanced concepts for Si, SiC, and GaN devices, thermal simulation methods, and parasitic electrical elements in power modules. The book explores cooling strategies from air to liquid and double-sided cooling, followed by comprehensive chapters on reliability testing, failure mechanisms, and lifetime prediction models. It also addresses destructive phenomena such as thermal breakdown, surge currents, overvoltage, and short-circuit behavior, along with cosmic ray failures and their mitigation. Additional chapters discuss electromagnetic disturbances, oscillations, and the integration of power electronic systems, making this volume an essential resource for engineers and researchers working on robust and efficient power device design.
1. The Challenge of Packaging Technology.-
2. Package Types.-
3.
Conventional Capsules.-
4. IGBT Presspacks.-
5. The TO-Family and Its
Relatives.-
6. GaN Device Packages.-
7. Physical Properties of Materials.-
8.
Thermal Simulation and Thermal Equivalent Circuits.
Josef Lutz has been Professor of Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany. His research focuses on power semiconductor devices, packaging, and reliability. He is widely recognized for inventing the Controlled Axial Lifetime (CAL) diode, a breakthrough in diode technology.



Heinrich Schlangenotto is a physicist based in Gütersloh, Germany, specializing in the physics of semiconductor power devices and their dynamic behavior. He pioneered the fast, soft recovery SPEED-diode, improving the performance of rectifier diodes.



Uwe Scheuermann works at Semikron in Nuremberg, Germany, where he leads developments in power module design, packaging technologies, and reliability. He introduced innovative packaging concepts such as spring contacts, shaping modern power module architecture.



Rik De Doncker is Professor at RWTH Aachen University, Germany, heading research on power electronics and high-power converters. He is known for developing the worlds first 15 kV medium-voltage transfer switch, a milestone in high-power converter systems.