Presents a unified treatment of the physical processes, mathematical models, and numerical techniques for circuit, device, and process simulation. Offers a model of an integrated circuit based on linear and nonlinear circuit elements, a model of current flow within a transistor using the drift-diffusion and hydrodynamic PDE systems, and models for physical processes such as diffusion, oxidation, and crystal growth, as well as finite difference and finite element methods for spatial discretizations. Contains chapter summaries, exercises, and programming assignments. For a graduate electrical engineering course in simulation, and for researchers in the semiconductor industry. Annotation c. by Book News, Inc., Portland, Or.
This book presents for the first time a unified treatment of the physical processes, mathematical models and numerical techniques for circuit, device and process simulation. At the macroscopic level linear and nonlinear circuit elements are introduced to yield a mathematical model of an integrated circuit. Numerical techniques used to solve this coupled system of ODEs are described. Microscopically, current flow within a transistor is modeled using the drift-diffusion and hydrodynamic PDE systems. Finite difference and finite element methods for spatial discretizations are treated, as are grid generation and refinement, upwinding, and multilevel schemes. At the fabrication level, physical processes such as diffusion, oxidation, and crystal growth are modeled using reaction-diffusion-convection equations. These models require multistep integration techniques and Krylov projection methods for successful implementation. Exercises, programming assignments, and an extensive bibliography are included to reinforce and extend the treatment.
