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E-raamat: Handbook of Silicon Carbide Materials and Devices [Taylor & Francis e-raamat]

Edited by (Guangxi University)
  • Formaat: 444 pages, 27 Tables, black and white; 158 Line drawings, black and white; 58 Halftones, black and white; 216 Illustrations, black and white
  • Sari: Series in Materials Science and Engineering
  • Ilmumisaeg: 31-May-2023
  • Kirjastus: CRC Press
  • ISBN-13: 9780429198540
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Handbook of Silicon Carbide Materials and DevicesSuurem pilt
  • Formaat: 444 pages, 27 Tables, black and white; 158 Line drawings, black and white; 58 Halftones, black and white; 216 Illustrations, black and white
  • Sari: Series in Materials Science and Engineering
  • Ilmumisaeg: 31-May-2023
  • Kirjastus: CRC Press
  • ISBN-13: 9780429198540
Teised raamatud teemal:
Taylor & Francis e-raamatudRohkem infot Taylor & Francis e-raamatute kohta
Raamatu kodulehekülg: https://www.taylorfrancis.com/books/9780429198540
"This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challengingissues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs"--

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.

Preface xiii
Editor Biography xv
Contributors xvii
Part I General
1 Silicon Carbide: Presolar SiC Stardust Grains and the Human History of SiC from 1824 to 1974
3(26)
Wolfgang J. Choyke
1 Introduction
3(1)
2 Presolar SiC Stardust Particles
3(7)
3 SiC History from 1824 to 1974
10(14)
4 Final Thoughts
24(5)
2 Recent Progresses in Vapor-Liquid-Solid Growth of High-Quality SiC Single Crystal Films and Related Techniques
29(26)
Yuji Matsumoto
1 Introduction
29(2)
2 Vapor-Liquid-Solid (VLS) Growth Mechanism
31(1)
2.1 Brief History of the VLS Growth Mechanism Toward Single Crystal Films
31(1)
2.2 Chemical Engineering Aspects in the VLS Growth Mechanism
32(2)
3 Experiment
34(1)
3.1 Pulsed Laser Deposition (PLD)-Based VLS
34(2)
3.2 Confocal Laser Scanning Microscope (CLSM) at Solution Growth Interfaces
36(2)
4 VLS Growth of SiC Films
38(1)
4.1 Origin of the Flattening Effect of Al Addition on the VLS Growth of SiC [ 30]
38(4)
4.2 Pt Additive Effect on the Step-Bunching in the Growth of SiC on Vicinal Substrates [ 44]
42(5)
5 VLS-Like Growth of SiC Films
47(1)
5.1 Basic Concept of VLS-Like Growth
47(2)
5.2 Homoepitaxial Growth of SiC Films [ 52]
49(2)
5.3 Heteroepitaxial Growth of SiC Films [ 53]
51(2)
5.4 Visible Light Photocurrent Response
53(2)
6 Conclusions and Future Prospects
55(6)
Acknowledgements
57(4)
3 Spectroscopic Investigations for the Dynamical Properties of Defects in Bulk and Epitaxially Grown 3C-SiC/Si (100)
61(38)
Devki N. Talwar
1 Background
61(1)
2 Silicon Carbide: A Wide Bandgap Material for Power and Microelectronics
61(1)
2.1 Crystalline Structure
62(4)
2.1.1 Polytypism
62(1)
2.1.2 Growth of SiC
63(1)
2.1.3 Emerging Interest in Cubic SiC
64(1)
2.1.4 3C-SiC/Si Processing Issues
64(1)
2.1.5 Basic Properties of SiC
65(1)
3 Phonons
66(1)
3.1 Group Theoretical Classification of Phonons
67(1)
3.2 Spectroscopic Methods
67(1)
3.2.1 Infrared Spectroscopy
68(1)
3.2.2 Infrared Spectroscopic Ellipsometry
68(1)
3.2.3 Raman Scattering Spectroscopy
68(1)
3.2.4 X-ray Absorption Fine Structure Spectroscopy
68(1)
4 Optical Response Theory
68(1)
4.1 Drude-Lorentz Model of IR Spectroscopy on Bulk 3C-SiC
69(3)
4.1.1 The Refractive Index
70(1)
4.1.2 Reflectivity
70(2)
4.2 Infrared Reflectivity of 3C-SiC/Si Epilayers: Ideal Configuration
72(1)
4.3 Infrared Reflectivity of 3C-SiC/Si Materials: Modified Model
73(1)
4.4 Infrared Reflectivity of 3C-SiC/Si Epifilms at Oblique Incidence
73(1)
4.5 Infrared Reflectivity of Superlattice Structures
74(1)
5 Spectroscopic Analysis of Infrared Spectra
75(1)
5.1 Ideal 3C-SiC/Si Films
75(8)
5.1.1 Effects of Film Thickness
76(1)
5.1.2 Reflectivity and Transmission of 3C-SiC/Si Epifilms
77(1)
5.1.3 Impact of Oblique Incidence on Transmission/Reflection: Berreman Effect
78(2)
5.1.4 Transmission at Oblique Incidence: Impact of Film Thickness of 3C-SiC/Si
80(1)
5.1.5 LO-plasmon Coupling in n-doped 3C-SiC
80(1)
5.1.6 Effects of Plasma Damping
81(1)
5.1.7 Transmission Spectra at Oblique Incidence in Doped 3C-SiC/Si Epilayers
81(2)
5.2 Typical Reflectance Spectra of 3C-SiC/Si (100) Epilayers
83(3)
5.2.1 Effect of Transition Layer and Surface Roughness
84(1)
5.2.2 Two-Component Bruggeman's Model
85(1)
6 Structural Characteristics of V-CVD Grown 3C-SiC
86(1)
6.1 Synchrotron Radiation X-ray Absorption Spectroscopy (SR-XAFS)
86(2)
7 Lattice Dynamics of Defects in 3C-SiC/Si
88(1)
7.1 Phonon Characteristics of 3C-SiC
89(1)
7.2 Green's Function Theory
89(2)
7.2.1 The Perfect Green's Function Matrix Go(ra)
89(1)
7.2.2 The Perturbation Matrix P(co)
89(1)
7.2.3 Group-Theoretic Analysis of Impurity Vibrational Modes
90(1)
7.2.4 Impurity Vibrational Modes of NN Anti-site Pairs
91(1)
8 Summary
91(8)
Acknowledgements
92(7)
4 SiC Materials, Devices, and Applications: A Review of Developments and Challenges in the 21st Century
99(26)
Min Lu
Chengling Lu
1 Introduction
99(2)
2 A Review of Developments and Challenges on SiC Substrate
101(2)
3 A Review of Developments and Challenges on SiC Epitaxy
103(4)
4 A Review of Developments and Challenges on SiC Devices
107(4)
5 A Review of Developments and Challenges on the SiC Package and Module
111(2)
6 A Review of Developments and Challenges on SiC Applications
113(2)
7 A Review of Developments and Challenges on SiC Technical Standardization
115(1)
8 Conclusion
116(9)
Part II SiC Materials Growth and Processing
5 CVD of SiC Epilayers - Basic Principles and Techniques
125(34)
Chin-Che Tin
Rongxiang Hu
Roman Drachev
Alireza Yaghoubi
1 Introduction
125(1)
2 SiC CVD System
126(1)
2.1 Overview
126(2)
2.2 Heating Technique
128(7)
2.3 Temperature Control
135(1)
2.4 Pressure, Reactor Configuration, and Susceptor Design
136(6)
2.5 Precursor Chemistry and Delivery
142(1)
3 Material Characteristics and Growth Procedures
143(1)
3.1 Polytypes
143(2)
3.2 Substrate Crystal Orientation
145(1)
3.3 Pre-Growth Etching
146(1)
3.4 Post-Growth Termination
146(1)
3.5 Susceptor Effect
147(1)
3.6 Doping
148(2)
3.7 Dopant Activation
150(1)
3.8 Porous Substrates
150(1)
4 Hot-Wall and High-Temperature CVD
150(2)
5 Safety
152(1)
6 Summary
153(6)
6 Homo-Epitaxy of Thick Crystalline 4H-SiC Structural Materials and Applications in an Electric Power System
159(14)
Yingxi Niu
1 Introduction
159(1)
2 Brief History Review of Research and Development on the Epitaxy and Devices of High Voltage
160(1)
2.1 4H-SiC epitaxy
160(2)
2.2 4H-SiC High-Voltage Devices
162(2)
3 Challenges of Ultrathick SiC Epitaxial Materials
164(1)
3.1 Defect Engineer
164(1)
3.2 Carrier Lifetime
165(2)
4 Conclusion
167(6)
7 Epitaxial Growth and Structural Studies of Cubic SiC Thin Films Grown on Si-face and C-face 4H-SiC Substrates
173(24)
Hao-Hsiung Lin
Bin Xin
Zhe Chuan Feng
Ian T. Ferguson
1 Introduction
173(2)
2 Epitaxial Growth
175(1)
3 Twinning and Double Position Boundary Defects in 3C-SiC Grown on Si-face 4H-SiC
175(1)
3.1 Surface Properties
176(2)
3.2 V-shaped Twirining Structure
178(5)
3.3 Dynamics of Adsorb Atoms near the DPB Defects
183(2)
3.4 Summary
185(1)
4 Super-V-Shaped Structure on 3C-SiC Grown on the C-Face 4H-SiC
185(1)
4.1 Defects in C-face 3C-SiC
186(1)
4.2 TEM Characterization
187(2)
4.3 Growth Model
189(2)
4.4 Step-flow and Anti-step-flow in the Growth Model of SVSSs
191(1)
4.5 Summary
192(1)
5 Conclusion
193(4)
Acknowledgements
193(4)
8 SiC Thermal Oxidation Process and MOS Interface Characterizations: From Carrier Transportation to Single-Photon Source
197(22)
Yasuto Hijikata
Yu-ichiro Matsushita
Takeshi Ohshima
1 Introduction
197(1)
2 SiC Oxidation Mechanism and the Carrier Transportation at the MOS Interface
198(1)
2.1 SiC Oxidation Process and Characteristics of MOS Interfaces
198(2)
2.1.1 SiC Oxidation Model
198(1)
2.1.2 Carrier Traps and Point Defects' Generation at the MOS Interface
199(1)
2.2 Theoretical Studies on the Carrier Transportation at the MOS Interface Performed by Ab Initio Calculations
200(8)
3 Creation of Single-Photon Sources at the MOS Interface
208(1)
3.1 Basic Properties and Structure Analyses of the SPSs
208(2)
3.2 Electrical Control of the Single-Photon Sources Formed at the MOS Interface
210(4)
4 Summary
214(5)
Part III SiC Materials Studies and Characterization
9 Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals
219(30)
Ian T. Ferguson
Zhi Ren Qiu
Lingyu Wan
Jeffrey Yiin
Benjamin Klein
Zhe Oman Feng
1 Introduction
219(1)
2 Experimental Details
220(1)
2.1 Materials
220(1)
2.2 Raman Spectrometer Systems
221(1)
3 RT Raman Scattering and Line Shape of Doped 4H-SiC and 6H-SiC
221(1)
3.1 RT Raman Spectra of 4H-SiC and 6H-SiC Crystalline Wafers
221(2)
3.2 Aj(LO) Phonon Line Shape versus Nitrogen Doping Concentration
223(1)
3.3 Theoretical Calculation of A,(LO) Phonon Line Shape
223(2)
4 The Second-Order Raman Scattering of 4H-SiC and 6H-SiC
225(3)
5 Electronic Raman Scattering from Nitrogen Defect Levels in 4H-and 6H-SiC
228(1)
5.1 Theory of Plasmon- Phonon Coupling in N-doped 6H-SiC
228(1)
5.2 Raman Scattering of N-doped 4H-SiC, Excited in Visible to NIR
228(1)
5.3 Comparative Electronic Raman Scattering of N-doped 4H-/6H-SiC
229(2)
6 Temperature Dependence of Raman Scattering in Bulk 4H-SiC with Different Carrier Concentration
231(1)
6.1 Experiment Temperature-Dependent RSS of Doped 4H-SiC
231(1)
6.2 Theoretical Calculation of TO Phonon Frequency
232(1)
6.3 Theoretical Simulation on Temperature Dependence of LOPC Mode
233(1)
7 Rotation Raman Scattering Study on Anisotropic Property in Wurtzite 4H-SiC
234(1)
7.1 Phonon Anisotropy Characteristics
234(1)
7.2 Experimental Arrangements
235(1)
7.3 Raman Selection Rules
236(2)
7.4 Rotation Raman Spectra and Analyses
238(3)
7.5 Raman Tensor Element Analyses
241(1)
8 Conclusion and Summary
242(7)
Acknowledgements
243(6)
10 Near-Infrared Luminescent Centers in Silicon Carbide
249(42)
Ivan G. lvanov
Nguyen T. Son
1 Introduction
249(2)
2 Intrinsic Defects
251(1)
2.1 The Silicon Vacancy
251(4)
2.2 The Divacancy
255(4)
3 Transition Metal Impurities with Near-Infrared Emission
259(1)
3.1 Vanadium
259(5)
3.2 Chromium
264(2)
3.3 Niobium
266(3)
3.4 Molybdenum
269(3)
3.5 Tungsten
272(3)
3.6 Erbium
275(1)
4 The Nitrogen-Vacancy Center in SiC
276(5)
5 Unidentified Defects with Emission in the Near Infrared
281(10)
11 SiC Substrate and its Epitaxial Layers' Analysis by Spectroscopic Ellipsometry
291(36)
Chang Cai Cui
HuiHui Li
1 Introduction
291(1)
2 Background of Spectroscopic Ellipsometry
292(1)
2.1 Basic Theory of Spectroscopic Ellipsometry
292(2)
2.2 Analysis Strategies of Spectroscopic Ellipsometry
294(3)
2.2.1 Forward Modeling and Reverse Fitting
294(1)
2.2.2 Matrix Decomposition
295(1)
2.2.3 Matrix Transformation
296(1)
2.2.4 Combined with Other Methods
296(1)
2.3 Typical Applications of Spectroscopic Ellipsometry
297(1)
2.4 Development of Spectroscopic Ellipsometry
297(1)
3 Ellipsometric Analysis of Anisotropic SiC
298(1)
3.1 Reflection and Transmission of Light by Bulk SiC
298(1)
3.2 Determination of Optical Functions from Reflection Ellipsometry
299(4)
3.3 Characterization of Anisotropy From Transmission Ellipsometry
303(1)
3.4 Temperature-Dependent Optical Properties of Bulk SiC
304(3)
4 Ellipsometric Analysis of SiC Epilayers and SiC Substrate-Based Epilayers
307(1)
4.1 Ellipsometric Analysis of Substrate-Film-Ambient System
307(1)
4.2 Ellipsometric Analysis of SiC Epilayer on the SiC Substrate and Other Substrates
307(2)
4.3 Ellipsometric Analysis of Graphene on SiC Substrate
309(1)
4.4 Ellipsometric Analysis of GaN on 4H-SiC Substrate
310(1)
4.5 Ellipsometric Analysis of A1N on SiC Substrate
311(3)
4.6 Temperature-Dependent Optical Properties Analysis of GaN Epilayer on SiC Substrate
314(1)
5 The Subsurface Damaged Layer of SiC Substrate
315(1)
5.1 Optical Constants of 4H-SiC
315(1)
5.2 Optical Stack Model
316(1)
5.3 The Sensitivity of Mueller Matrix
316(2)
5.4 Reflection Mueller Matrix Analysis
318(2)
6 Summary
320(7)
Acknowledgements
321(6)
12 Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon
327(48)
Tatiana S. Perova
Sergey A. Kukushkin
andAndrey V. Osipov
1 Introduction
327(1)
1.1 Raman Mapping of Various SiC Structures
327(6)
1.1.1 Crystalline Bulk SiC Structures
329(1)
1.1.2 SiC Layers Grown on Different Substrates
330(1)
1.1.3 SiC Fibers
331(1)
1.1.4 Gr and III-V Semiconductors Deposited onto SiC
331(2)
1.2 Method of coordinated Substitution of Atoms and its Distinctive Features
333(5)
2 Experimental Details
338(1)
2.1 Investigation of 3C-SiC Layers Deposited by Method of Coordinated Substitution of Atoms
338(9)
2.1.1 Fabrication of SiC/Si Hybrid Substrate
338(1)
2.1.2 Microscopy Characterization Techniques
338(1)
2.1.3 Raman Microscopy and Mapping of SiC/Si Hybrid Substrate
339(5)
2.1.4 Mechanism of the Raman Signal Enhancement
344(3)
2.2 SiC-on-Si - A New, Flexible Template for the Growth of Epitaxial Films and Nanocrystals
347(15)
2.2.1 Growth of II-VI Compounds on SiC/Si Substrates
348(5)
2.2.2 Growth of III-V Compounds on SiC/Si Substrates
353(7)
2.2.3 Hybrid SiC/Si Substrate as an Intermediate Structure for Two-Stage Conversion of Si into a Thin Layer of Diamond-like Graphite
360(2)
3 Conclusions and Summary
362(13)
Acknowledgments
363(12)
Part IV SiC Devices and Developments
13 4H-SiC-Based Photodiodes for Ultraviolet Light Detection
375(28)
Weifeng Yang
Zhengyun Wu
1 Introduction
375(2)
2 Basic Theory of UV Photodetection
377(1)
2.1 Photoelectric Effect
377(1)
2.1.1 External Photoelectric Effect
377(1)
2.1.2 Internal Photoelectric Effect
377(1)
2.2 Key Parameters of UV Photodiodes
378(1)
2.2.1 Quantum Efficiency and Responsivity
378(1)
2.2.2 Cut-off Frequency and Cut-off Wavelength
378(1)
2.2.3 Photocurrent and Dark Current
378(1)
2.2.4 Breakdown Voltage
379(1)
3 Classical 4H-SiC-Based Photodetectors
379(1)
3.1 Schottky Barrier Diodes
379(3)
3.2 Metal-Semiconductor-Metal (MSM) Diodes
382(4)
3.3 p-n and p-i-n Photodiodes
386(4)
3.4 Avalanche Photodiodes
390(5)
4 Novel 4H-SiC-based UV Photodetectors
395(1)
4.1 Graphene/4H-SiC UV Photodetectors
395(2)
4.2 β-Ga2O3/4H-SiC UV Photodetectors
397(1)
5 Conclusions and Outlook
397(6)
14 SiC Radiation Detector Based on Metal-Insulator-Semiconductor Structures
403(16)
Chong Chen
Yuping Jia
Xiaojuan Sun
Dabing Li
1 Introduction
403(1)
2 SiC Material Properties
404(2)
3 SiC Radiation Detector with MIS Structures
406(1)
3.1 Vertical Structure with Thin A1203 as an Insulator
406(1)
3.2 Vertical Structure with Thin HfO2 as the Insulator
406(3)
3.3 Vertical Structure with Thick SiO2 as the Insulator
409(3)
3.4 MIS Structures with Graphene Insertion in Ohmic Contact Electrode
412(2)
4 Conclusion
414(5)
15 Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction
419(12)
Gu Xu
Zhe Chuan Feng
Jeffrey Yiin
Vishal Saravade
Benjamin Klein
Ian T. Ferguson
1 Introduction
419(1)
2 Research Background
420(1)
3 Experimental and Fundamental Details
421(2)
4 Theoretical Fourier Transform Calculation on 3C-SiC
423(1)
5 Theoretical Calculation of Homo-Epitaxial 6H-SiC and 4H-SiC
424(1)
6 Synchrotron Radiation X-Ray Diffraction Measurements and Simulation
425(2)
7 Conclusion
427(4)
Index 431
Professor Zhe Chuan Feng earned his PhD in condensed matter physics from University of Pittsburgh in 1987, and, earlier, BS (196268) and MS (197881) from the Department of Physics at Peking University. He has worked at Emory University (198892), National University of Singapore (199294), Georgia Tech (199495), EMCORE Corporation (199597), Institute of Materials Research & Engineering, Singapore (19982001), Axcel Photonics (200102), Georgia Tech (200203), National Taiwan University (NTU) (2003-20151) as a professor at the Graduate Institute of Photonics & Optoelectronics and the Department of Electrical Engineering; and Guangxi University (GXU) (2015-2020) as a distinguished professor at the School of Physical Science and Technology. After retiring from NTU and GXU and moving back to Georgia, USA, he established the Science Exploring Lab and in January 2022 joined Kennesaw State University as an Adjunct Professor in the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology.

He has long been devoted to materials research and growth of III-V and II-VI compounds, LED, III-nitrides, SiC, ZnO, GaO and other semiconductors and oxides. Professor Feng has edited twelve review books on compound semiconductors and microstructures, porous Si, SiC and III-nitrides, ZnO devices, and nanoengineering, especially in the 21st century on WBGs: SiC Power Materials: Devices and Applications, Springer (2004); III-Nitride Semiconductor Materials, Imperia College Press (2006); III-Nitride Devices and Nanoengineering, Imperia College Press (2008); Handbook of Zinc Oxides and Related Materials: Volume 1) Materials, and Volume 2) Devices and Nano-Engineering, T&F/CRC (2012); Handbook of Solid-State Lighting and LEDs, T&F/CRC (2017); and III-Nitride Materials, Devices and Nanostructures, World Scientific Publishing (2017).

He has authored and co-authored more than 570 scientific papers with more than 420 indexed by Science Citation Index (SCI) and cited more than 6600 times, with h-index:40 and i10-index:152. Among these, he has published more than 50 journal papers and more than 70 conference papers on SiC as well as three review books on SiC. He has been a symposium organizer and invited speaker at numerous international conferences and universities. He has served as a guest editor for special journal issues and has been a visiting or guest professor at Sichuan University, Nanjing Tech University, South China Normal University, Huazhong University of Science & Technology, Nankai University, and Tianjin Normal University. Professor Feng has been a fellow of SPIE since 2013. More details on his academic contributions can be found at https://scholar.google.com/citations?hl=en&user=vdyXZpEAAAAJ and https://www.ee.ntu.edu.tw/profile1.php?teacher_id=941011&p=5.
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