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E-raamat: Handbook of Spintronic Semiconductors [Taylor & Francis e-raamat]

Edited by (Linkopings Universitet, Sweden), Edited by (Linkoping Universitet, Sweden)
  • Formaat: 370 pages, 118 Illustrations, color; 76 Illustrations, black and white
  • Ilmumisaeg: 31-May-2010
  • Kirjastus: Pan Stanford Publishing Pte Ltd
  • ISBN-13: 9780429065507
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Handbook of Spintronic SemiconductorsSuurem pilt
  • Formaat: 370 pages, 118 Illustrations, color; 76 Illustrations, black and white
  • Ilmumisaeg: 31-May-2010
  • Kirjastus: Pan Stanford Publishing Pte Ltd
  • ISBN-13: 9780429065507
Teised raamatud teemal:
Taylor & Francis e-raamatudRohkem infot Taylor & Francis e-raamatute kohta
Raamatu kodulehekülg: https://www.taylorfrancis.com/books/9780429065507
This book offers recent progress in the spintronic research of semiconductors. The authors, active in this field, provide both theoretical and experimental aspects of the current issues relationg to the aforesaid field and the potential applications of diluted maynetic semiconductors. An excellent reference in the spin-related semoconductor physics and electronics for graduate students and researchers!---Emeritus Prof Vasuo Oka IMRAM, Toboku University, Japan

Spintronics explores the spin degree of freedom of the electron to sense, store, process and tranfer information in addition to the electron charge. Semicondutor spintronics promises to combine new spin enabling functionality with the presentday microelectronics and optoelectronics, It also opens the door to new generation of devices and to the merging of electronics, photonics and magetics. The success of spintronics relies on out ability to create and control spins. Among many obstacles, generation of electron spin polarization and coherence at room temperature is one of the most important as well as the most challenging issues, which has attracted intense research efforts during recent years. Significant progresses have been made both theoretically and experimentally, While many issues remain unresolved.

This book provides an in-dept review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent develipment in theory and experimental techniques and potential devic applictions: its aim is to provide postgraduate students researchers and engineers a comprehensive overview of out present knowledge and future perspective of spintronic semiconductors.

Spintronics explores the spin degree of freedom of the electron to sense, store, process and transfer information in addition to the electron charge. Semiconductor spintronics promises to combine new spin enabling functionality with the present-day microelectronics and optoelectronics. It also opens the door to new generation of devices, and to the merging of electronics, photonics and magnetics. The success of spintronics relies on our ability to create and control spins. Among many obstacles, generation of electron spin polarization and coherence at room temperature is one of the most important as well as the most challenging issues, which has attracted intense research efforts during recent years. Significant progresses have been made both theoretically and experimentally, while many issues remain unresolved.This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.
Preface v
1 Computational Materials Design in Semiconductor Nano-spintronics
1(80)
1.1 Introduction
2(9)
1.1.1 Gordon Moore's Law and Beyond Si-CMOS
2(1)
1.1.2 Semiconductor Nano-spintronics
2(2)
1.1.3 Computational Nano-materials Design and the CMD® System
4(1)
1.1.4 Ab initio Calculation of Electronic Structure and Magnetic Mechanisms in Dilute Magnetic Semiconductors (DMS)
4(1)
1.1.5 Inhomogeneous DMS Caused by Spinodal Nanodecomposition
5(1)
1.1.6 3D Dairiseki Phase and 1D Konbu Phase as a Quantum Dot and Nano Wire
5(2)
1.1.7 Colossal Magnetic Response by Electric Field and Photonic Excitation
7(1)
1.1.8 Spincaloritronics
8(2)
1.1.9 Organization of This
Chapter
10(1)
1.2 III-V and II-VI Compound Semiconductor Based DMS by LDA
11(12)
1.2.1 Electronic Structure and Chemical Trends
12(4)
1.2.2 Ferromagnetic Mechanism in the DMS
16(4)
1.2.3 Curie Temperature (Tc) of Homogeneous Systems
20(3)
1.3 Spinodal Nano-decomposition in Diluted Magnetic Semiconductors (DMS)
23(18)
1.3.1 Inhomogeneous Distribution of Transition Metal Impurities in DMS
23(1)
1.3.2 Mixing Free Energy and Phase Stability
24(2)
1.3.3 Effective Chemical-Pair Interactions in the DMS
26(1)
1.3.4 Simulation of the Spinodal Nano-decomposition
27(1)
1.3.5 Three-dimensional Spinodal Decomposition (Dairiseki Phase)
27(2)
1.3.6 Two-dimensional Spinodal Decomposition (Konbu Phase)
29(2)
1.3.7 Co-doping Method for Controlling Spinodal Decomposition
31(2)
1.3.8 Super-paramagnetic Blocking Phenomena
33(2)
1.3.9 Applications of the Konbu Phase
35(3)
1.3.10 Spin Caloritronics Application in Colossal Spin-Entropy Expansion Cooling by the Konbu Phase
38(3)
1.4 ZnO and GaN-based DMS by SIC-LDA
41(11)
1.4.1 Pseudo-Self-Interaction-Corrected Local Density Approximation (SIC-LDA) Method
42(2)
1.4.2 ZnO-Based DMSs in SCI-LDA Versus LDA
44(3)
1.4.3 Mn-Doped GaN in SIC-LDA Versus LDA
47(2)
1.4.4 Calculated Density of States (DOS) by LDA and SIC-LDA Versus X-ray Photoemission Spectroscopy (XPS)
49(3)
1.5 TiO2 Based DMS by LDA Versus SIC-LDA
52(8)
1.5.1 Electronic Structure of (Ti, Co)O2
53(3)
1.5.2 Electronic Structure of Host TiO2: LDA Versus SIC-LDA
56(1)
1.5.3 Electronic Structure of (Ti, Co)O2 and n-type (Ti, Co)O2 with Oxygen Vacancy (Double Donor): LDA Versus SIC-LDA
57(2)
1.5.4 Conclusion
59(1)
1.6 A New Class of Dilute Magnetic Semiconductors without Transition Metal Elements
60(13)
1.6.1 Deep Impurity Band Based Dilute Ferromagnetic Semiconductors without Transition Metal Impurities: SIC-LDA Versus LDA
61(2)
1.6.2 SiO2-Based DMS
63(1)
1.6.3 Carbon Doped Alkaline Earth Metal Oxides
64(4)
1.6.4 Nitrogen Doped Alkaline Earth Metal Oxides
68(2)
1.6.5 Nitrogen Doped MgS and MgSe
70(1)
1.6.6 Conclusion
71(2)
1.7 Summary
73(8)
2 Transition Metal Doped ZnO
81(22)
2.1 Introduction
81(2)
2.2 DMS Theory: The Physical Origins of Ferromagnetism in DMS
83(5)
2.2.1 Dietl's Mean-Field Theory
84(1)
2.2.2 First-Principles Design: DFT Calculations
85(1)
2.2.3 Ferromagnetism in a Localized Carrier Regime
85(2)
2.2.4 Ferromagnetism in a Spin-Split Conduction Band
87(1)
2.3 Experimental Progress in ZnO DMS
88(11)
2.3.1 Mn-Doped ZnO
88(6)
2.3.2 Co-Doped ZnO
94(5)
2.4 Conclusions and Outlook
99(4)
3 Spintronics in III-Nitride Based Materials
103(20)
3.1 Introduction
103(1)
3.2 Material Selection for Spintronic Semiconductors
104(4)
3.3 Models for the Mechanisms of Ferromagnetism
108(2)
3.3.1 Free Carrier Mediated Model
108(1)
3.3.2 Percolation Model
109(1)
3.3.3 Extension to Rare Earth Magnetic Impurities
109(1)
3.3.4 Models Considering Defects
110(1)
3.4 III-Nitride DMS Materials
110(7)
3.4.1 Gd-Doped GaN
111(1)
3.4.2 Gd-and Si-co-doped GaN
112(3)
3.4.3 Gd-Doped AlGaN and Heterostructures
115(1)
3.4.4 Gd-Implanted GaN
116(1)
3.4.5 Gd-Implanted AlGaN/GaN Device Structures
117(1)
3.4.6 Gd-Doped and Implanted AIN
117(1)
3.5 Summary and Issues to Be Resolved
117(6)
4 Electronic Structure of Mn in III-Mn-V Ferromagnetic Semiconductors
123(34)
4.1 Introduction
123(1)
4.2 Lattice Site Location of Mn in Ga1-xMnxAs
124(19)
4.2.1 Self-compensation and Mn Location in GaMnAs
124(1)
4.2.2 Channeling Rutherford Backscattering and Particle Induced X-ray Emission
125(1)
4.2.3 Detection of Mn Interstitials in GaMnAs
126(3)
4.2.4 Stability of Mn Interstitials
129(7)
4.2.5 Maximum Carrier Concentration and Tc in III-Mn-V Semiconductors
136(1)
4.2.6 Co-doping of GaMnAs with Shallow Dopants
137(6)
4.3 Electronic Structure of Mn in GaMnAs
143(9)
4.3.1 Valence Band Anticrossing Model
146(1)
4.3.2 Mobility and the Metal-to-Insulator Transition
147(4)
4.3.3 Ga1-xMnx-V Alloys
151(1)
4.4 Conclusions
152(5)
5 Ga1-xMnxP Synthesized by Ion Implantation and Pulsed-Laser Melting
157(24)
5.1 Introduction
158(1)
5.2 Ion Implantation and Pulsed-Laser Melting (II-PLM)
159(4)
5.3 Evidence of the Carrier-Mediated Phase of Ga1-xMnxP
163(3)
5.4 The Detached Mn-Derived Impurity Band in Ga1-xMnxP
166(2)
5.5 Magnetic Anisotropy
168(3)
5.6 Electrical Transport
171(2)
5.7 Stability of MnGa Defect in Ga1-xMnxP: Behavior Upon Extended Annealing
173(1)
5.8 Comparison of Ga1-xMnxP to Other III1-xMnxV Materials
174(2)
5.9 Summary
176(5)
6 InMnAs Thin Films and Heterostructures
181(12)
6.1 Introduction
181(1)
6.2 Epitaxial Film Deposition
182(2)
6.3 Electronic Properties of InMnAs
184(1)
6.4 Magnetic Properties
185(1)
6.5 Magnetoresistance and Magnetotransport
185(2)
6.6 Bipolar Magnetic Semiconductor Device Structures
187(2)
6.7 Magneto-optical Properties
189(2)
6.8 Conclusions
191(2)
7 Magnetic Doping of Group IV Semiconductors
193(32)
7.1 General Introduction
194(1)
7.2 Magnetic Doping of Conventional Semiconductors: Theoretical Considerations
195(4)
7.3 Magnetic Doping of Conventional Semiconductors: Practical Considerations
199(1)
7.4 MnxGe1-x: A Silicon Compatible DMS
199(19)
7.4.1 Magnetic Properties
201(4)
7.4.2 Transport Properties
205(7)
7.4.3 Generalized Polaron Percolation Picture
212(2)
7.4.4 Ultra Dilute Regime of MnxGe1-x DMS
214(4)
7.5 Concluding Remarks
218(7)
8 Dynamics of Localized Spins in Non-Magnetic Semiconductors
225(18)
8.1 Introduction
225(1)
8.2 Theory
226(2)
8.3 Spin Initialization
228(2)
8.4 Spin Lifetimes
230(3)
8.5 Spin Rotation
233(2)
8.6 Applications I: Coherent Population Trapping
235(2)
8.7 Applications II: Transfer of Light Polarization to Spin Coherence
237(2)
8.8 Conclusion
239(4)
9 Zero-Bias Spin Separation
243(22)
9.1 Introduction
243(1)
9.2 Microscopic Model
244(2)
9.2.1 Photoexcitation Mechanism of a Pure Spin Current
245(1)
9.2.2 Relaxation Mechanism of a Pure Spin Current
246(1)
9.3 Conversion of Pure Spin Current into Spin Photocurrent
246(7)
9.3.1 Spin Photocurrent Due to the Photoexcitation Mechanism
247(2)
9.3.2 Spin Photocurrent Due to the Relaxation Mechanism
249(1)
9.3.3 Spin Photocurrent in Diluted Magnetic Semiconductors
250(2)
9.3.4 Phenomenological Theory of the Magneto-gyrotropic Photogalvanic Effect
252(1)
9.4 Experiments on the Zero-Bias Spin Separation
253(5)
9.5 Application of Spin Photocurrents
258(4)
9.6 Concluding Remarks
262(3)
10 Electrical Spin Injection in Hybrid Ferromagnetic Metal/Semiconductor Structures
265(24)
10.1 Introduction
265(1)
10.2 Theory of Spin Injection Through a Hybrid Metal-Semiconductor Interface
266(6)
10.2.1 The Diffusive Regime of Spin Injection and the Problem of Impedance Mismatch
266(4)
10.2.2 Microscopic Picture
270(2)
10.3 Measurement of the Electrical Spin Injection in Hybrid Devices
272(14)
10.3.1 General Considerations
272(1)
10.3.2 Spin-LEDs with Schottky Barriers
273(3)
10.3.3 Spin-LEDs with Alumine Barriers
276(4)
10.3.4 Spin-LEDs with MgO Barriers
280(4)
10.3.5 Pulsed Electrical Injection and Time-Resolved Electroluminescence
284(2)
10.4 Conclusions and Outlook
286(3)
11 Magneto-optical Spectroscopy of Spin Injection and Spin Relaxation in Spin Light-Emitting Structures
289(36)
11.1 Introduction
289(1)
11.2 Sample Structures
290(1)
11.2.1 ZnMnSe/Zn(Cd)Se QW Spin Injection Structures
290(1)
11.2.2 ZnMnSe/CdSe QD Spin Injection Structures
290(1)
11.2.3 GaMnN/InGaN Spin Light Emitting Diode Structures
290(1)
11.2.4 ZnO-Based Structures
291(1)
11.3 ZnMnSe/ZnCdSe QW Spin Injection Structures
291(17)
11.3.1 Spin Injection
292(5)
11.3.2 Spin Alignment
297(7)
11.3.3 Spin Detection
304(4)
11.4 Spin Polarization in ZnMnSe/CdSe QD Spin Injection Structures
308(3)
11.5 GaMnN/InGaN Spin Injection Structures
311(5)
11.5.1 Spin Injection
312(1)
11.5.2 Spin Detection
312(4)
11.6 ZnO-Based Spin Functional Structures
316(4)
11.6.1 Spin Detection: Optical Orientation Measurements
316(1)
11.6.2 Spin Detection: Time-Resolved Magneto-optical Spectroscopy
317(2)
11.6.3 Spin Detection: Possible Mechanisms for Spin Depolarization
319(1)
11.7 Conclusions and Outlook
320(5)
Color Plates 325(30)
Index 355
Weimin Chen, Irina Buyanova
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