| Foreword |
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xi | |
| Preface |
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xv | |
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1 The Theoretical Discovery of the Josephson Effect |
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1 | (16) |
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1 | (3) |
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1.2 The Phase of a Superconducting Current |
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4 | (2) |
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1.3 Boundaries and Junctions |
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6 | (1) |
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1.4 Detailed Origin of the Theory of Weakly Coupled Superconductors |
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7 | (3) |
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1.5 Testing for Predictions |
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10 | (7) |
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2 Introduction to Refractory Josephson Junctions |
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17 | (30) |
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2.1 Review of Physical Aspects |
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17 | (5) |
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2.2 History of the Josephson Program |
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22 | (3) |
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2.3 Development of Tunnel and Josephson Junctions on Niobium |
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25 | (5) |
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2.4 Development of Tunnel and Josephson Junctions on Niobium Nitride |
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30 | (4) |
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2.5 Non-hysteretic Josephson Junctions and Generalized Josephson Devices |
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34 | (13) |
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2.5.1 Shapiro Steps, Highly Hysteretic Junctions, and Josephson Voltage Standards |
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36 | (2) |
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2.5.2 Josephson Junction Arrays |
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38 | (3) |
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2.5.3 Josephson Devices for RSFQ Computing |
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41 | (6) |
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3 Tunnel Junctions on Niobium Using Aluminum: Experiment |
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47 | (20) |
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51 | (1) |
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3.2 Gap Region Spectra of the Ames Lab Nb/Al Tunnel Junctions |
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52 | (6) |
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3.3 High-Bias Spectra of the Ames Lab Nb/Al Tunnel Junctions |
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58 | (1) |
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3.4 Point Contact Tunneling Studies of Nb |
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59 | (8) |
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4 Tunnel Junctions on Niobium Using Aluminum: Theory |
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67 | (16) |
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4.1 Proxity Effect in Thin N Layers on Thick S Layers |
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68 | (3) |
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4.2 Tunneling Density of States in NS Bilayers |
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71 | (5) |
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4.3 Effects of Elastic Scattering in the N Metal Layer |
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76 | (2) |
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4.4 Tunneling Density of States in NS Bilayers with Elastic Scattering in the N Layer |
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78 | (1) |
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4.5 The Josephson Current in STNS Tunnel Junctions with Thin N Metal Layers |
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79 | (4) |
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5 The Trace That Launched a Thousand Chips: Development of Nb/Al--Oxide--Nb Technology |
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83 | (64) |
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84 | (4) |
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5.2 Starting at Bell Labs: Thin-Film Deposition System |
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88 | (7) |
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5.3 Superconducting Supercomputer Project at IBM and Its Extensions |
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95 | (8) |
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5.4 Josephson Junctions in 1980 |
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103 | (12) |
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5.5 Making Semi-soft Tunnel Junctions |
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115 | (3) |
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5.6 Metallic Superlattices and Tunneling into Nb/Al |
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118 | (6) |
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5.7 The Sad Story of Our Patent Application |
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124 | (1) |
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5.8 Nb/Al Refractory Junctions Are Emerging |
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125 | (2) |
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5.9 The Whole-Wafer Process: SNEP-SNAP |
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127 | (6) |
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5.10 Uniformity, Stability, and Cycling |
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133 | (1) |
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5.11 Combination of Tunneling and Surface Studies; Wetting and Al Disappearance; Junctions with Y, Mg, and Er |
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134 | (3) |
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137 | (2) |
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5.13 Who Did What, Where, and When |
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139 | (8) |
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6 Refractory Niobium Nitride NbN Josephson Junctions and Applications |
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147 | (38) |
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6.1 Early Niobium Nitride Devices |
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149 | (4) |
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6.1.1 Applied SIS Josephson Tunnel Junctions Until 1983 |
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149 | (2) |
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6.1.2 Success and Limitations of Refractory Trilayer Processes |
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151 | (2) |
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6.2 Niobium Nitride Tunnel Josephson Junctions |
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153 | (6) |
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6.2.1 Introduction of NbN Film Textures |
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154 | (2) |
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6.2.2 Use of Templates in NbN Heterostructures |
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156 | (1) |
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6.2.3 NbNOx Barriers in NbN SIS Junctions |
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157 | (2) |
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6.3 NbN Junctions for IC Applications |
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159 | (7) |
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6.3.1 From NbNOx to MgO and AIN Barriers in NbN SIS Junctions |
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159 | (3) |
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6.3.2 NbN and NbTiN SNS and SS'S Junctions |
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162 | (4) |
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6.4 NbN Digital Circuits and Other Applications |
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166 | (19) |
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6.4.1 First Digital Circuits Based on NbN--Oxide--NbN Junctions |
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166 | (1) |
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6.4.2 HF Applications of NbN-MgO (or AIN)--NbN Junctions at 2 K and 10 K |
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167 | (1) |
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6.4.3 Internally Damped NbN Junctions Applied to RSFQ Technologies |
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168 | (3) |
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6.4.4 NbN Devices Offer Wider Applications Than Nb Ones |
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171 | (2) |
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6.4.5 Scaling of NbN Josephson Junction Size |
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173 | (12) |
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7 Applications in Superconducting SIS Mixers and Oscillators: Toward Integrated Receivers |
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185 | (60) |
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7.1 Nb-Based Tunnel Junctions for Low-Noise SIS Receivers and Superconducting Oscillators |
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186 | (18) |
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7.1.1 Niobium Tunnel Junctions with an AIOx Barrier |
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187 | (6) |
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7.1.2 Niobium-Based Tunnel Junctions with AIN Barrier |
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193 | (7) |
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7.1.3 NbN Tunnel Junctions with MgO Barrier |
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200 | (4) |
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7.2 Superconducting Terahertz Oscillators |
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204 | (18) |
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7.2.1 Nb-Based Flux-Flow Oscillators |
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204 | (6) |
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7.2.2 Linewidth of the Flux-Flow Oscillator and Its Phase-Locking |
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210 | (3) |
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7.2.3 Sub-Terahertz Sound Excitation and Detection by Long Josephson Junctions |
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213 | (9) |
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7.3 Superconducting Integrated Receivers |
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222 | (10) |
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7.3.1 The SIR Channel Design and Performance |
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224 | (8) |
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232 | (13) |
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8 Application in Superconducting Quantum Interference Devices SQUIDs |
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245 | (86) |
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246 | (14) |
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8.1.1 Basic SQUID Function |
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246 | (5) |
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251 | (5) |
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8.1.3 Inductance and Effective Area |
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256 | (4) |
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8.2 Making the SQUID a Practical Device |
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260 | (15) |
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260 | (1) |
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8.2.2 Low-Inductance Current Sensors |
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261 | (5) |
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8.2.3 High-Inductance Current Sensors |
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266 | (5) |
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8.2.4 Magnetic Field Sensors |
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271 | (4) |
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275 | (15) |
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8.3.1 Flux-Locked Loop Basics |
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276 | (6) |
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8.3.2 Flux Modulation Readout |
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282 | (3) |
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285 | (5) |
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290 | (26) |
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8.4.1 Introductory Discussion |
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290 | (3) |
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293 | (7) |
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300 | (7) |
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8.4.4 Readout of Superconducting Detectors |
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307 | (9) |
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316 | (15) |
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9 Application in Adiabatic Quantum Annealing |
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331 | (28) |
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332 | (5) |
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9.2 Superconducting Flux Qubit |
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337 | (4) |
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9.3 Robust and Scalable Flux Qubit |
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341 | (1) |
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342 | (2) |
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9.5 Control and Measurement Circuit |
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344 | (2) |
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9.6 Scalable Architecture |
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346 | (1) |
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347 | (3) |
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350 | (2) |
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352 | (7) |
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10 Application to Josephson Voltage Standards |
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359 | (26) |
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359 | (2) |
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10.2 Conventional DC Josephson Voltage Standards |
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361 | (6) |
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10.2.1 Design: Demands and Targets for Conventional Josephson Voltage Standards |
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363 | (3) |
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10.2.2 Fabrication Technology and Results for Conventional Josephson Voltage Standards: A Brief Survey |
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366 | (1) |
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10.3 AC Josephson Voltage Standards |
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367 | (10) |
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10.3.1 Design: Demands and Targets for Overdamped Josephson Junctions and Series Arrays |
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370 | (2) |
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10.3.2 Realization of Binary-Divided Josephson Voltage Standards |
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372 | (3) |
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10.3.3 Realization of Pulse-Driven Josephson Voltage Standards |
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375 | (2) |
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377 | (8) |
| Index |
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385 | |