Muutke küpsiste eelistusi

E-raamat: MOS Interface Physics, Process and Characterization [Taylor & Francis e-raamat]

,
  • Formaat: 162 pages, 1 Tables, black and white; 97 Line drawings, black and white; 26 Halftones, black and white; 123 Illustrations, black and white
  • Ilmumisaeg: 12-Oct-2021
  • Kirjastus: CRC Press
  • ISBN-13: 9781003216285
Teised raamatud teemal:
  • Taylor & Francis e-raamat
  • Hind: 133,87 €*
  • * hind, mis tagab piiramatu üheaegsete kasutajate arvuga ligipääsu piiramatuks ajaks
  • Tavahind: 191,24 €
  • Säästad 30%
MOS Interface Physics, Process and CharacterizationSuurem pilt
  • Formaat: 162 pages, 1 Tables, black and white; 97 Line drawings, black and white; 26 Halftones, black and white; 123 Illustrations, black and white
  • Ilmumisaeg: 12-Oct-2021
  • Kirjastus: CRC Press
  • ISBN-13: 9781003216285
Teised raamatud teemal:
Taylor & Francis e-raamatudRohkem infot Taylor & Francis e-raamatute kohta
Raamatu kodulehekülg: https://www.taylorfrancis.com/books/9781003216285
"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"--

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.



The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.

This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.

This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

Preface ix
Authors xi
Introduction 1(6)
0.1 Scope and Plan of the Book
1(1)
0.2 Brief History of Mos Devices
2(5)
Bibliography
5(2)
Chapter 1 Physics of Interface
7(44)
1.1 Mos Interface
7(1)
1.2 The Physical Nature Of Interface States And Bulk Defects
8(1)
1.3 Mos Interface Passivation Methods
9(2)
1.4 Interface Thermodynamics
11(2)
1.5 Quantum Confinement Effect In Mos
13(1)
1.6 Interfacial Dipole In Mos Gate Stacks
14(3)
1.7 Extraction Method Of Dipole Formation At High-K/Sio2 Interface
17(7)
1.7.1 Capacitance--Voltage Method
17(4)
1.7.2 Method Based on X-ray Photoemission Spectroscopy
21(2)
1.7.3 Method Based on Internal Photoemission
23(1)
1.8 Physical Origin Of Dipole Formation At High-K/Sio2 Interface
24(9)
1.8.1 Electronegativity Model
24(2)
1.8.2 Areal Oxygen Density Model
26(1)
1.8.3 Interface Induced Gap States Model
27(6)
1.9 "Roll-Off" And "Roll-Up" Phenomenon
33(7)
1.10 Physical Origin Of Fixed Charges At Ge/Geox Interface
40(7)
1.11 Summary
47(4)
Bibliography
47(4)
Chapter 2 MPS Processes
51(44)
2.1 Mos Capacitor Preparation Process
51(7)
2.1.1 Slicing
52(1)
2.1.2 Cleaning
52(2)
2.1.3 Dielectric Formation
54(2)
2.1.4 Metal Evaporation to Form Electrodes
56(2)
2.2 Oxidation Process and Kinetics
58(18)
2.2.1 Thermal Processing (RTP) and Plasma Oxidation Systems
58(1)
2.2.1.1 Thermal Processing (RTP) Systems
58(4)
2.2.1.2 Plasma Oxidation Systems
62(14)
2.2.2 Summary of Oxidation
76(1)
2.3 Deposition Process
76(17)
2.3.1 Sputtering
76(4)
2.3.2 Atomic Layer Deposition
80(3)
2.3.3 Vacuum Thermal Evaporation
83(2)
2.3.4 Molecular Beam Epitaxy (MBE)
85(3)
2.3.5 Metal Organic Chemical Vapor Deposition (MOCVD)
88(5)
2.4 Summary
93(2)
Bibliography
93(2)
Chapter 3 MOS Characterizations
95(58)
3.1 Methods For Evaluating The Density Of Interface States Of Mos
95(10)
3.1.1 High-Frequency (Terman) Method
95(2)
3.1.2 Quasi-Static (Low-Frequency) Method
97(2)
3.1.3 High-Low-Frequency Method
99(1)
3.1.4 C-φs Method
99(3)
3.1.5 Conductance Method
102(3)
3.2 Experimental Step
105(18)
3.2.1 Calibrate the Equipment
106(1)
3.2.1.1 Phase Calibration
107(3)
3.2.1.2 Butt Joint of Coaxial Joint and Triaxial Joint
110(2)
3.2.1.3 Open-Circuit Calibration
112(1)
3.2.1.4 Short-Circuit Calibration
113(1)
3.2.2 C--V Curve Was Measured After Calibration
113(2)
3.2.3 An Example of Measuring Density of Interface States of SiC MOS by Conductance Method
115(1)
3.2.3.1 Part 1: Measurement of the C--V Curve
115(1)
3.2.3.2 Part 2: Measurement of the G--f Curve
116(1)
3.2.3.3 Part 3: Measurement of the System Series Resistance Rs
117(6)
3.3 Hysteresis and Bulk Charge
123(7)
3.3.1 Interface Trapped Charge
124(1)
3.3.2 Near Interface Trapped Charge (Border Trap)
125(5)
3.3.3 Fixed Charge in the Oxide Layer
130(1)
3.4 Equivalent Oxide Thickness
130(3)
3.5 Leakage
133(13)
3.5.1 Direct Tunneling
134(4)
3.5.2 Poole--Frenkel Leakage
138(4)
3.5.3 Fowler--Nordheim Tunneling
142(1)
3.5.4 Other Transport Mechanisms of Carriers
143(3)
3.6 Work Function and Effective Work Function
146(7)
3.6.1 Definition of EWF Based on Terraced SiO2
148(1)
3.6.2 Definition of EWF Based on Terraced High-k Dielectric
149(1)
3.6.3 Quantitative Analysis of the Effects of Various Factors on EWF
150(3)
Bibliography 153(2)
Appendix I Physical Constants 155(2)
Appendices II--V Useful Data For Mos Interface In Periodic Table 157
Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.

Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.
Püsilink: https://www.kriso.ee/db/9781003216285_pe.html
Märksõnad: