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E-raamat: Nanoscale Devices: Physics, Modeling, and Their Application [Taylor & Francis e-raamat]

(Indian Institute of Technology-Roorkee, India)
  • Formaat: 452 pages
  • Ilmumisaeg: 30-Jun-2020
  • Kirjastus: CRC Press
  • ISBN-13: 9781315163116
  • Taylor & Francis e-raamat
  • Hind: 207,73 €*
  • * hind, mis tagab piiramatu üheaegsete kasutajate arvuga ligipääsu piiramatuks ajaks
  • Tavahind: 296,75 €
  • Säästad 30%
  • Formaat: 452 pages
  • Ilmumisaeg: 30-Jun-2020
  • Kirjastus: CRC Press
  • ISBN-13: 9781315163116
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. .





Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices





Also, includes design problems at the end of each chapter
Section I Nanoscale Transistors
1. Simulation of Nanoscale Transistors
from Quantum and Multiphysics Perspective
2. Variability in Nanoscale
Technology and EDC MOS Transistor
3. Effect of Ground Plane and Strained
Silicon on Nanoscale FET Devices Section II Novel MOSFET Structures
4.
U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor:
Structures and Characteristics
5. Operational Characteristics of Vertically
Diffused Metal Oxide Semiconductor Field Effect Transistor
6. Modeling of
Double-Gate MOSFETs Section III Modeling of Tunnel FETs
7. TFETs for Analog
Applications
8. Dual MetalDouble Gate Doping-Less TFET: Design and
Investigations Section IV Graphene and Carbon Nanotube Transistors and
Applications
9. Modeling of Graphene Plasmonic Terahertz Devices
10. Analysis
of CNTFET for SRAM Cell Design
11. Design of Ternary Logic Circuits Using
CNFETs Section V Modeling of Emerging Non-Silicon Transistors
12. Different
Analytical Models for Organic Thin-Film Transistors: Overview and Outlook
13.
A Fundamental Overview of High Electron Mobility Transistor and Its
Applications Section VI Emerging Nonvolatile Memory Devices and Applications
14. Spintronic-Based Memory and Logic Devices
15. Fundamentals, Modeling, and
Application of Magnetic Tunnel Junctions
16. RRAM Devices: Underlying
Physics, SPICE Modeling, and Circuit Applications
17. Evaluation of Nanoscale
Memristor Device for Analog and Digital Application
Brajesh Kumar Kaushik received Doctorate of Philosophy (Ph.D.) in 2007 from Indian Institute of Technology, Roorkee, India. He joined Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, as Assistant Professor in December 2009; and since April 2014 he has been an Associate Professor. He has served as General Chair, Technical Chair, and Keynote Speaker of many reputed international and national conferences. Dr. Kaushik is a Senior Member of IEEE and member of many expert committees constituted by government and non-government organizations. He is Editor of IEEE Transactions on Electron Devices; Associate Editor of IET Circuits, Devices & Systems; Editor of Microelectronics Journal, Elsevier; Editor of Journal of Electrical and Electronics Engineering Research, Academic Journals; and Editorial board member of Journal of Engineering, Design and Technology, Emerald. He also holds the position of Editor-in-Chief of International Journal of VLSI Design & Communication Systems, and SciFed Journal of Spintronics & Quantum Electronics. He has received many awards and recognitions from the International Biographical Center (IBC), Cambridge. His name has been listed in Marquis Whos Who in Science and Engineering® and Marquis Whos Who in the World®. Dr. Kaushik has been conferred with Distinguished Lecturer award of IEEE Electron Devices Society (EDS) to offer EDS Chapters with quality lectures in his research domain. His research interests are in the areas of high-speed interconnects, low-power VLSI design, memory design, carbon nanotube-based designs, organic electronics, FinFET device circuit co-design, electronic design automation (EDA), spintronics-based devices, circuits and computing, image processing, and optics & photonics based devices.