Muutke küpsiste eelistusi

E-raamat: Quantum Cascade Lasers [Oxford Scholarship Online e-raamatud]

(, Institute for Quantum Electronics, ETH Zurich)
  • Formaat: 320 pages, 225 b/w line illustrations
  • Ilmumisaeg: 14-Mar-2013
  • Kirjastus: Oxford University Press
  • ISBN-13: 9780198528241
Teised raamatud teemal:
  • Oxford Scholarship Online e-raamatud
  • Raamatu hind pole hetkel teada
Quantum Cascade LasersSuurem pilt
  • Formaat: 320 pages, 225 b/w line illustrations
  • Ilmumisaeg: 14-Mar-2013
  • Kirjastus: Oxford University Press
  • ISBN-13: 9780198528241
Teised raamatud teemal:
Wiley OnlineRohkem infot Oxford Scholarship Online e-raamatute kohta
Raamatu kodulehekülg: http://www.oxfordscholarship.com/view/10.1093/acprof:oso/9780198528241.001.0001/acprof-9780198528241
This book provides an introduction to quantum cascade lasers, including the basic underlying models used to describe the device. It aims at giving a synthetic view of the topic including the aspects of the physics, the technology, and the use of the device. It should also provide a guide for the application engineer to use this device in systems.

The book is based on lecture notes of a class given for Masters and beginning PhD students. The idea is to provide an introduction to the new and exciting developments that intersubband transitions have brought to the use of the mid-infrared and terahertz region of the electromagnetic spectrum. The book provides an introductory part to each topic so that it can be used in a self-contained way, while references to the literature will allow deeper studies for further research.
Variables and symbols xiv
1 Quantum devices
1(8)
1.1 Quantum devices
1(1)
1.2 Interband and intersubband
2(2)
1.3 Intersubband transitions: historical aspects
4(3)
1.4 Mid-infrared sources
7(2)
2 Technology
9(17)
2.1 Epitaxial layers
9(10)
2.2 Quantum cascade laser processing
19(5)
2.3 Mounting techniques
24(2)
3 Electronic states in semiconductor quantum wells
26(22)
3.1 Band structure of semiconductors in the k.p. approximation: origin of the effective mass
26(4)
3.2 Envelope function approximation
30(6)
3.3 Hartree potential
36(1)
3.4 Active region building blocks
37(5)
3.5 In-plane dispersion
42(3)
3.6 Full model: the valence band
45(3)
4 Optical transitions
48(19)
4.1 Interaction Hamiltonian
48(1)
4.2 Intersubband and interband transition
49(1)
4.3 Selection rules and absorption geometries
50(1)
4.4 Absorption strength
51(3)
4.5 Experimental results
54(3)
4.6 Sum rule in absorption
57(1)
4.7 Absorption in a quantum well: a two-band model
58(1)
4.8 Depolarization shift
59(2)
4.9 Absorption linewidth
61(4)
4.10 Stark-tuning of intersubband absorption
65(2)
5 Intersubband scattering processes
67(24)
5.1 Spontaneous emission
69(1)
5.2 Phonon scattering
69(5)
5.3 Elastic scattering
74(9)
5.4 Comparison with experiments
83(8)
6 Mid-infrared waveguides
91(17)
6.1 Dielectric slab waveguide
91(4)
6.2 Interface plasmon mode
95(2)
6.3 Optical properties of doped layers
97(4)
6.4 Two-dimensional confinement
101(2)
6.5 Large optical waveguides
103(1)
6.6 Thermal properties
104(4)
7 Active region design
108(38)
7.1 Historical perspective
108(1)
7.2 Active region: fundamental concepts
109(3)
7.3 Intersubband versus interband lasers
112(1)
7.4 Fate-equation analysis, threshold condition, slope efficiency
112(2)
7.5 Optimization of the active region: the intersubband toolbox
114(10)
7.6 Optimization of the active region: different designs
124(7)
7.7 Cascading: scaling with the number of periods
131(2)
7.8 Temperature dependence
133(3)
7.9 Doping of the active region
136(2)
7.10 Wallplug efficiency
138(8)
8 Short-wavelength QCLs
146(12)
8.1 Conduction band discontinuity and performance
146(2)
8.2 Heterostructure materials
148(2)
8.3 Strain-compensated InxGa1-xAs/AlyIn1-yAs/InP material system
150(8)
9 Terahertz QCL
158(10)
9.1 Terahertz waveguides
159(2)
9.2 Active-region designs
161(3)
9.3 Free carrier absorption
164(2)
9.4 Key operation characteristics
166(2)
10 Mode control
168(31)
10.1 Fabry-Perot cavity
168(1)
10.2 Distributed feedback cavity
169(17)
10.3 External cavities
186(9)
10.4 DFB arrays
195(4)
11 Device properties and characterization
199(18)
11.1 Basic electrical and optical characterization
199(3)
11.2 Electroluminescence and spectral measurements
202(1)
11.3 Far-field
203(1)
11.4 Active-region temperature
203(5)
11.5 Gain and loss measurements
208(9)
12 Transport models
217(38)
12.1 Rate-equation models
218(7)
12.2 Density matrix
225(21)
12.3 Full density matrix models
246(6)
12.4 Monte Carlo
252(1)
12.5 Non-equilibrium Green's function
252(3)
13 Dynamical properties
255(15)
13.1 High-frequency modulation
255(6)
13.2 Multi-mode instabilities
261(9)
14 Applications
270(16)
14.1 Energy deposition
270(1)
14.2 Telecommunications
270(2)
14.3 Gas-sensing
272(12)
14.4 Broadband spectroscopy
284(2)
Appendix A Designs
286(3)
A.1 First-generation designs
286(1)
A.2 Bound-to-continuum and two-phonon designs
287(1)
A.3 Strain-compensated designs
288(1)
References 289(16)
Index 305
Jérôme Faist was born in Switzerland and obtained his Ph.D. in Physics in 1989 from the Swiss Institute of Technology in Lausanne. He then worked successively at IBM Rueschlikon (1989-91) and Bell Laboratories (1991-97). He was nominated full professor in the physics institute of the University of Neuchâtel (1997) and then in the ETH Zurich (2007).

His key contribution to the development of the quantum cascade laser was recognized by a number of awards that include the National Swiss Latsis Prize 2002.
Püsilink: https://www.kriso.ee/db/9780198528241_pe.html
Märksõnad: