Update cookies preferences

Semiconductor Devices: Physics and Technology 3rd edition [Hardback]

4.06/5 (50 ratings by Goodreads)
(Bell Laboratories, Inc.), (National Sun-Yat Sen University, PRC)
  • Format: Hardback, 592 pages, height x width x depth: 257x208x28 mm, weight: 1225 g
  • Pub. Date: 30-Dec-2016
  • Publisher: John Wiley & Sons Inc
  • ISBN-10: 0470537949
  • ISBN-13: 9780470537947
Other books in subject:
  • Hardback
  • Price: 351,03 €
  • This book is not in stock. Book will arrive in about 2-4 weeks. Please allow another 2 weeks for shipping outside Estonia.
  • Quantity:
  • Add to basket
  • Delivery time 4-6 weeks
  • Add to Wishlist
Semiconductor Devices: Physics and Technology 3rd editionLarger Image
  • Format: Hardback, 592 pages, height x width x depth: 257x208x28 mm, weight: 1225 g
  • Pub. Date: 30-Dec-2016
  • Publisher: John Wiley & Sons Inc
  • ISBN-10: 0470537949
  • ISBN-13: 9780470537947
Other books in subject:
Permanent link: https://www.kriso.ee/db/9780470537947.html
Keywords:
"Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices"--

Provided by publisher.

Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
Preface vii
Acknowledgments ix
Chapter 0 Introduction
1(14)
0.1 Semiconductor Devices
1(5)
0.2 Semiconductor Technology
6(9)
Summary
12(3)
PART I SEMICONDUCTOR PHYSICS
Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium
15(28)
1.1 Semiconductor Materials
15(2)
1.2 Basic Crystal Structures
17(5)
1.3 Valence Bonds
22(1)
1.4 Energy Bands
23(6)
1.5 Intrinsic Carrier Concentration
29(5)
1.6 Donors and Acceptors
34(9)
Summary
40(3)
Chapter 2 Carrier Transport Phenomena
43(39)
2.1 Carrier Drift
43(10)
2.2 Carrier Diffusion
53(3)
2.3 Generation and Recombination Processes
56(6)
2.4 Continuity Equation
62(6)
2.5 Thermionic Emission Process
68(1)
2.6 Tunneling Process
69(2)
2.7 Space-Charge Effect
71(2)
2.8 High-Field Effects
73(9)
Summary
77(5)
PART II SEMICONDUCTOR DEVICES
Chapter 3 p-n Junction
82(41)
3.1 Thermal Equilibrium Condition
83(4)
3.2 Depletion Region
87(8)
3.3 Depletion Capacitance
95(4)
3.4 Current-Voltage Characteristics
99(9)
3.5 Charge Storage and Transient Behavior
108(3)
3.6 Junction Breakdown
111(6)
3.7 Heterojunction
117(6)
Summary
120(3)
Chapter 4 Bipolar Transistors and Related Devices
123(37)
4.1 Transistor Action
124(5)
4.2 Static Characteristics of Bipolar Transistors
129(8)
4.3 Frequency Response and Switching of Bipolar Transistors
137(5)
4.4 Nonideal Effects
142(4)
4.5 Heterojunction Bipolar Transistors
146(3)
4.6 Thyristors and Related Power Devices
149(11)
Summary
155(5)
Chapter 5 MOS Capacitor and MOSFET
160(35)
5.1 Ideal MOS Capacitor
160(9)
5.2 SiO2-Si MOS Capacitor
169(5)
5.3 Carrier Transport in MOS Capacitors
174(3)
5.4 Charge-Coupled Devices
177(3)
5.5 MOSFET Fundamentals
180(15)
Summary
192(3)
Chapter 6 Advanced MOSFET and Related Devices
195(33)
6.1 MOSFET Scaling
195(10)
6.2 CMOS and BiCMOS
205(5)
6.3 MOSFET on Insulator
210(4)
6.4 MOS Memory Structures
214(9)
6.5 Power MOSFET
223(5)
Summary
224(4)
Chapter 7 MESFET and Related Devices
228(30)
7.1 Metal-Semiconductor Contacts
229(11)
7.2 MESFET
240(9)
7.3 MODFET
249(9)
Summary
255(3)
Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices
258(22)
8.1 Microwave Frequency Bands
259(1)
8.2 Tunnel Diode
260(1)
8.3 IMPATT Diode
260(5)
8.4 Transferred-Electron Devices
265(4)
8.5 Quantum-Effect Devices
269(5)
8.6 Hot-Electron Devices
274(6)
Summary
277(3)
Chapter 9 Light Emitting Diodes and Lasers
280(43)
9.1 Radiative Transitions and Optical Absorption
280(6)
9.2 Light-Emitting Diodes
286(5)
9.3 Various Light-Emitting Diodes
291(11)
9.4 Semiconductor Lasers
302(21)
Summary
319(4)
Chapter 10 Photodetectors and Solar Cells
323(34)
10.1 Photodetectors
323(13)
10.2 Solar Cells
336(7)
10.3 Silicon and Compound-Semiconductor Solar Cells
343(5)
10.4 Third-Generation Solar Cells
348(4)
10.5 Optical Concentration
352(5)
Summary
352(5)
PART III SEMICONDUCTOR TECHNOLOGY
Chapter 11 Crystal Growth and Epitaxy
357(35)
11.1 Silicon Crystal Growth from the Melt
357(6)
11.2 Silicon Float-Zone Proces
363(4)
11.3 GaAs Crystal-Growth Techniques
367(3)
11.4 Material Characterization
370(7)
11.5 Epitaxial-Growth Techniques
377(7)
11.6 Structures and Defects in Epitaxial Layers
384(8)
Summary
388(4)
Chapter 12 Film Formation
392(36)
12.1 Thermal Oxidation
392(8)
12.2 Chemical Vapor Deposition of Dielectrics
400(9)
12.3 Chemical Vapor Deposition of Polysilicon
409(3)
12.4 Atom Layer Deposition
412(2)
12.5 Metallization
414(14)
Summary
425(3)
Chapter 13 Lithography and Etching
428(38)
13.1 Optical Lithography
428(13)
13.2 Next-Generation Lithographic Methods
441(6)
13.3 Wet Chemical Etching
447(3)
13.4 Dry Etching
450(16)
Summary
462(4)
Chapter 14 Impurity Doping
466(39)
14.1 Basic Diffusion Process
467(9)
14.2 Extrinsic Diffusion
476(4)
14.3 Diffusion-Related Processes
480(3)
14.4 Range of Implanted Ions
483(7)
14.5 Implant Damage and Annealing
490(5)
14.6 Implantation-Related Processes
495(10)
Summary
501(4)
Chapter 15 Integrated Devices
505(36)
15.1 Passive Components
507(4)
15.2 Bipolar Technology
511(5)
15.3 MOSFET Technology
516(13)
15.4 MESFET Technology
529(3)
15.5 Challenges for Nanoelectronics
532(9)
Summary
537(4)
Appendix A List of Symbols 541(2)
Appendix B International Systems of Units (SI Units) 543(1)
Appendix C Unit Prefixes 544(1)
Appendix D Greek Alphabet 545(1)
Appendix E Physical Constants 546(1)
Appendix F Properties of Important Element and Binary Compound Semiconductors at 300 K 547(1)
Appendix G Properties of Si and GaAs at 300 K 548(1)
Appendix H Derivation of the Density of States in a Semiconductor 549(4)
Appendix I Derivation of Recombination Rate for Indirect Recombination 553(2)
Appendix J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode 555(2)
Appendix K Basic Kinetic Theory of Gases 557(2)
Appendix L Answers to Selected Problems 559(4)
Photo credits 563(2)
Index 565
S. M. Sze, PhD, is UMC Chair Professor in the Electronics Engineering Department at the National Chiao Tung University. His previous books include Semiconductor Devices; Physics of Semiconductor Devices, Second Edition; High-Speed Semiconductor Devices; and Semiconductor Sensors, all available from Wiley.

Ming-Kwei Lee is the author of Semiconductor Devices: Physics and Technology, 3rd Edition, published by Wiley.