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E-raamat: Thermoelectric Skutterudites [Taylor & Francis e-raamat]

(University of Michigan, Ann Arbor, USA)
  • Formaat: 322 pages, 20 Tables, black and white; 119 Line drawings, color; 57 Line drawings, black and white; 9 Halftones, color; 6 Halftones, black and white; 128 Illustrations, color; 63 Illustrations, black and white
  • Ilmumisaeg: 19-May-2021
  • Kirjastus: CRC Press
  • ISBN-13: 9781003105411
  • Taylor & Francis e-raamat
  • Hind: 267,74 €*
  • * hind, mis tagab piiramatu üheaegsete kasutajate arvuga ligipääsu piiramatuks ajaks
  • Tavahind: 382,48 €
  • Säästad 30%
  • Formaat: 322 pages, 20 Tables, black and white; 119 Line drawings, color; 57 Line drawings, black and white; 9 Halftones, color; 6 Halftones, black and white; 128 Illustrations, color; 63 Illustrations, black and white
  • Ilmumisaeg: 19-May-2021
  • Kirjastus: CRC Press
  • ISBN-13: 9781003105411
"This book informs the reader about a fascinating class of materials referred to as skutterudites, the atomic lattice of which has large structural voids that can be filled by a variety of foreign species, spanning from alkali to alkaline to rare earth ions. The fillers, in their unique way, drastically modify the physical properties of the parent structure, giving rise to outstanding thermoelectric properties. This exciting material is of growing importance and is finding applications in a variety of different fields. This book will be of interest to researchers working in materials science, physics, and chemistry in addition to graduate students in these subjects. Features: Gives a comprehensive account of all fundamental physical properties of skutterudites Each major topic is accompanied by introductory sections and a further detailed theoretical treatment is provided in Appendices Supported by many figures and a vast number of relevant references"--

This book informs the reader about a fascinating class of materials referred to as skutterudites, the atomic lattice of which has large structural voids that can be filled by a variety of foreign species, spanning from alkali to alkaline to rare earth ions. The fillers, in their unique way, drastically modify the physical properties of the parent structure, giving rise to outstanding thermoelectric properties.
This exciting material is of growing importance and is finding applications in a variety of different fields. This book will be of interest to researchers working in materials science, physics, and chemistry in addition to graduate students in these subjects.


Features:
• Gives a comprehensive account of all fundamental physical properties of skutterudites
• Each major topic is accompanied by introductory sections and a further detailed theoretical treatment is provided in Appendices
• Supported by many figures and a vast number of relevant references

Preface xi
About the Author xv
Chapter 1 Structural Aspects of Skutterudites
1(64)
1.1 Binary Skutterudites
1(16)
1.1.1 Structural Aspects of Binary Skutterudites
1(6)
1.1.2 Bonding in Binary Skutterudites
7(1)
1.1.3 Solid Solutions of Binary Skutterudites
8(1)
1.1.4 Structural Stability of Binary Skutterudites
9(3)
1.1.5 Native Defects in Binary Skutterudites
12(5)
1.2 Ternary Skutterudites
17(2)
1.3 Filled Skutterudites
19(29)
1.3.1 Filled Skutterudites with the [ M4X12] Framework
22(1)
1.3.1.1 Void Occupancy
22(4)
1.3.1.2 Criteria for Filling
26(2)
1.3.1.3 Column 13 Elements (Ga, In, and Tl) as Fillers
28(6)
1.3.1.4 Skutterudites as Zintl Phases
34(1)
1.3.1.5 Atomic Displacement Parameter
34(2)
1.3.2 Filled Skutterudites with the [ T4X12]4-Framework
36(1)
1.3.2.1 [ T4X12]4-Polyanion and Valency of the Fillers
36(7)
1.3.3 Skutterudites with the [ Pt4Ge12] Framework
43(2)
1.3.4 Skutterudites Filled with Electronegative Fillers
45(3)
1.4 Composite Skutterudites
48(17)
1.4.1 Intrinsically Formed Composite Skutterudites
48(4)
1.4.2 Extrinsically Formed Composite Skutterudites
52(7)
References
59(6)
Chapter 2 Fabrication of Skutterudites
65(26)
2.1 Phase Diagram of Skutterudites
65(2)
2.2 Synthesis of Skutterudites
67(24)
2.2.1 Synthesis by Melting and Annealing
67(1)
2.2.2 Solid-Liquid Sintering
67(1)
2.2.3 Mn-Reduction of Oxides
67(1)
2.2.4 Single Crystal Growth
67(1)
2.2.4.1 Single Crystals from Nonstoichometric Melts
67(1)
2.2.4.2 Flux Growth of Crystals
68(1)
2.2.4.3 Growth of Crystals by Chemical Vapor Transport
69(1)
2.2.5 Rapid Fabrication Techniques
69(1)
2.2.5.1 Melt Spinning Technique
69(1)
2.2.5.2 Ball Milling
69(1)
2.2.5.3 Melt Atomization
69(1)
2.2.5.4 Chemical Alloying
70(1)
2.2.6 High-Pressure Synthesis
70(1)
2.2.7 Microwave-Assisted Synthesis
71(1)
2.2.8 Self-Propagating High-Temperature Synthesis (SHS)
71(1)
2.2.9 Selective Laser Melting
72(1)
2.2.10 Hydrothermal and Solvothermal Growth
72(2)
2.2.11 Growth of Thin Films of Skutterudites
74(1)
2.2.11.1 MBE Fabrication of Skutterudite Films
75(1)
2.2.11.2 Modulated Elemental Reaction Synthesis of Skutterudite Films
76(2)
2.2.11.3 DC and RF Sputtering of Skutterudite Films
78(3)
2.2.11.4 Pulsed Laser Deposition of Skutterudite Films
81(2)
2.2.11.5 Electrodeposition of Skutterudite Films
83(3)
2.2.12 Stability of Thin Films of CoSb3
86(1)
References
86(5)
Chapter 3 Electronic Energy Band Structure
91(38)
3.1 Band Structure of Binary Skutterudites
91(19)
3.1.1 Effect of Pressure on the Band Structure of Binary Skutterudites
108(2)
3.2 Band Structure of Ternary Skutterudites
110(3)
3.3 Band Structure of Filled Skutterudites
113(5)
3.4 Band Structure of Skutterudites with the [ Pt4Ge12] Framework
118(3)
3.5 Band Structure of Skutterudites Filled with Electronegative Fillers
121(2)
3.6 Benefits of Accurate Computations of Electronic Bands
123(6)
References
124(5)
Chapter 4 Electronic Transport Properties of Skutterudites
129(40)
4.1 Introduction
129(2)
4.2 Conduction in a Single Parabolic Band
131(2)
4.3 Two-Band Conduction, Bipolar Thermal Conductivity
133(1)
4.4 The Role of Effective Mass
134(2)
4.5 Nonparabolic Bands
136(1)
4.6 Relaxation Time/Scattering Mechanisms of Charge Carriers
136(8)
4.6.1 Scattering of Charge Carriers by Phonons
137(1)
4.6.1.1 Acoustic Deformation Potential Scattering
137(2)
4.6.1.2 Polar Optical Scattering
139(1)
4.6.1.3 Nonpolar Optical Scattering
140(1)
4.6.2 Ionized Impurity Scattering
140(2)
4.6.3 Alloy Scattering
142(1)
4.6.4 Intervalley Scattering
142(1)
4.6.5 Averaging and the Combined Relaxation Time
143(1)
4.7 Forms of the Charge Carrier Mobility
144(1)
4.7.1 Mobility of Electrons under Acoustic Deformation Potential Scattering
144(1)
4.7.2 Mobility of Electrons under Ionized Impurity Scattering
145(1)
4.8 Electronic Transport Properties of Skutterudites
145(24)
4.8.1 Electrical Conductivity of Skutterudites
145(1)
4.8.1.1 Pure Binary Skutterudites
145(4)
4.8.1.2 Intentionally Doped Binary Skutterudites
149(1)
4.8.1.3 Electrical Conductivity of Ternary Skutterudites
150(1)
4.8.1.4 Electrical Conductivity of Filled Skutterudites
150(1)
4.8.2 Seebeck Coefficient of Skutterudites
151(1)
4.8.2.1 Seebeck Coefficient of Pure CoSb3
151(3)
4.8.2.2 Seebeck Coefficient of Doped CoSb3
154(1)
4.8.2.3 Seebeck Coefficient of Other Binary Skutterudites
155(2)
4.8.2.4 Seebeck Coefficient of Composites Having the CoSb3 Matrix
157(2)
4.8.2.5 Effect of Pressure on the Seebeck Coefficient
159(1)
4.8.2.6 Seebeck Coefficient as Input to Determine the Carrier Effective Mass
159(2)
4.8.2.7 Seebek Coefficient of Filled Skutterudites
161(3)
References
164(5)
Chapter 5 Thermal Transport Properties of Skutterudites
169(92)
5.1 Normal Phonon Modes
169(8)
5.1.1 Normal Modes of a Monatomic Linear Chain
170(3)
5.1.2 Normal Modes of a Diatomic Linear Chain
173(4)
5.2 Lattice Modes and the Phonon Density of States in Skutterudites
177(14)
5.2.1 Lattice Modes in Binary Skutterudites
177(4)
5.2.2 Lattice Modes in Ternary Skutterudites
181(1)
5.2.3 Lattice Modes and the Density of States of Filled Skutterudites
181(10)
5.3 Challenges to the PGEC Concept in Skutterudites
191(1)
5.4 Goldstone Modes in Certain Skutterudites
192(1)
5.5 Lattice Dynamics in FeSb3
193(1)
5.6 Phonon Dispersion in Yb-Filled Skutterudites
194(3)
5.7 Theoretical Foundations of the Thermal Conductivity
197(6)
5.7.1 Electronic Part of the Thermal Conductivity
199(1)
5.7.2 Lattice Thermal Conductivity
200(1)
5.7.2.1 Boltzmann Transport Equation for Heat
200(3)
5.8 Scattering Processes of Phonons
203(10)
5.8.1 Intrinsic Phonon Scattering Processes
203(2)
5.8.1.1 Model of Callaway
205(1)
5.8.1.2 Temperature and Frequency Dependence of Intrinsic Phonon Processes
206(2)
5.8.2 Temperature and Frequency Dependence of Extrinsic Phonon Processes
208(1)
5.8.2.1 Boundary Scattering
208(1)
5.8.2.2 Scattering of Phonons by Dislocations
208(1)
5.8.2.3 Scattering of Phonons by Point Defects
209(2)
5.8.2.4 Scattering of Phonons by Charge Carriers
211(1)
5.8.2.5 Resonant Scattering of Phonons
212(1)
5.9 Molecular Dynamics Simulations of Thermal Conductivity
213(2)
5.10 Ab initio Calculations of the Thermal Conductivity
215(2)
5.11 Bipolar Heat Transport
217(1)
5.12 Minimum Thermal Conductivity
217(3)
5.13 Thermal Conductivity of Skutterudites
220(41)
5.13.1 Thermal Conductivity of Binary Skutterudites
220(5)
5.13.1.1 Effect of Grain Size on the Thermal Conductivity of Binary Skutterudites
225(1)
5.13.1.2 Effect of Doping on the Thermal Conductivity of Binary Skutterudites
226(3)
5.13.1.3 Thermal Conductivity of Solid Solutions of Binary Skutterudites
229(1)
5.13.1.4 Thermal Conductivity of Composite Structures Based on Binary Skutterudites
230(1)
5.13.2 Thermal Conductivity of Ternary Skutterudites
231(2)
5.13.3 Thermal Conductivity of Filled Skutterudites
233(3)
5.13.3.1 Thermal Conductivity of Single-Filled RyCo4Sb12 and RFe4Sb12
236(1)
5.13.3.2 Thermal Conductivity of Yb-Filled Frameworks [ Co4Sb12] and [ Fe4Sb12]
237(5)
5.13.3.3 Thermal Conductivity of In-Filled Frameworks [ Co4Sb12] and [ Fe4Sb12]
242(1)
5.13.3.4 Thermal Conductivity of Single-Filled Charge Compensated Skutterudites
243(4)
5.13.3.5 Thermal Conductivity of Composite Skutterudites with a Filled Matrix
247(1)
5.13.3.6 Thermal Conductivity of Multiple-Filled Skutterudites
248(4)
References
252(9)
Chapter 6 Thermoelectric Properties of Skutterudites
261(58)
6.1 Introduction
261(1)
6.2 Thermoelectric Phenomena
261(3)
6.3 Operation of a Thermoelectric Energy Converter
264(7)
6.3.1 Thermoelectric Generator Operating with the Maximum Power
266(1)
6.3.2 Thermoelectric Generator Operating with the Maximum Efficiency
267(4)
6.4 Optimization of the Thermoelectric Figure of Merit
271(14)
6.4.1 Optimal Value of the Seebeck Coefficient That Maximizes ZT
273(2)
6.4.2 The Chasmar-Stratton Material Parameter β
275(5)
6.4.3 Band Engineering to Enhance Thermoelectric Performance
280(1)
6.4.3.1 Multivalley Semiconductors
280(1)
6.4.3.2 Band Convergence
280(2)
6.4.3.3 Resonance States
282(2)
6.4.3.4 Energy Filtering
284(1)
6.5 Thermoelectric Skutterudites
285(10)
6.5.1 Thermoelectric Performance of n-Type Skutterudites
286(5)
6.5.2 Thermoelectric Performance of p-Type Skutterudites
291(4)
6.6 Stability of Skutterudites
295(6)
6.6.1 Compositional Stability
295(3)
6.6.2 Mechanical Integrity of Skutterudites
298(3)
6.6.3 Thermal Expansion of Skutterudites
301(1)
6.7 Skutterudite Thermoelectric Modules
301(11)
6.8 Applications of Skutterudite Modules
312(7)
References
313(6)
Index 319
Ctirad Uher is a C. Wilbur Peters Professor of Physics at the University of Michigan in Ann Arbor. He earned his BSc in physics with the University Medal from the University of New South Wales in Sydney, Australia. He carried out his graduate studies at the same institution under Professor H. J. Goldsmid on the topic of Thermomagnetic effects in bismuth and its dilute alloys, and received his PhD in 1975. Subsequently, Professor Uher was awarded the prestigious Queen Elizabeth II Research Fellowship, which he spent at Commonwealth Scientific and Industrial Research Organization (CSIRO), National Measurement Laboratory (NML), in Sydney. He then accepted a postdoctoral position at Michigan State University, where he worked with Profs. W. P. Pratt, P. A. Schroeder, and J. Bass on transport properties at ultra-low temperatures.

Professor Uher started his academic career in 1980 as an assistant professor of Physics at the University of Michigan. He progressed through the ranks and became full professor in 1989. That same year the University of New South Wales awarded him the title of DSc for his work on transport properties of semimetals. At the University of Michigan, he served as an associate chair of the Department of Physics and subsequently as an associate dean for research at the College of Literature, Sciences and Arts. In 1994, he was appointed as chair of physics, the post he held for the next 10 years.

Professor Uher has had more than 45 years of research, described in more than 520 refereed publications in the areas of transport properties of solids, superconductivity, diluted magnetic semiconductors, and thermoelectricity. In the field of thermoelectricity, to which he returned during the past 25 years, he worked on the development of skutterudites, half-Heusler alloys, modified lead telluride materials, magnesium silicide solid solutions, tetrahedrites, and Molecular Beam Epitaxy (MBE)rown thin films forms of Bi2Te3-based materials. He has written a number of authoritative review articles and has presented his research at numerous national and international conferences as invited and plenary talks. In 1996, he was elected fellow of the American Physical Society. Professor Uher was honored with the title of Doctor Honoris Causa from the University of Pardubice in the Czech Republic in 2002, and in 2010 was awarded a named professorship at the University of Michigan. He received the prestigious China Friendship Award in 2011.

Professor Uher supervised 16 PhD thesis projects and mentored numerous postdoctoral researchers, many of whom are leading scientists in academia and research institutions all over the world. Professor Uher served on the Board of Directors of the International Thermoelectric Society. In 20042005, he was elected vice president of the International Thermoelectric Society and during 20062008 served as its president.