Preface |
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vii | |
1. Introduction |
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1 | (6) |
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1.1 Need for tunable external cavity diode lasers |
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1 | (1) |
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1.2 Brief introduction of semiconductor diode lasers |
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2 | (1) |
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1.3 Review of tunable diode lasers |
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3 | (4) |
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1.3.1 Tunable monolithic semiconductor lasers |
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3 | (1) |
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1.3.2 Tunable external cavity diode lasers |
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4 | (1) |
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1.3.3 Comparisons of technologies |
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5 | (2) |
2. Basics of Semiconductor Diode Lasers |
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7 | (22) |
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2.1 Principle of diode laser operation |
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7 | (7) |
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2.1.1 Absorption, spontaneous emission, and stimulated emission |
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8 | (2) |
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2.1.2 Requirements for lasing of semiconductor diode lasers |
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10 | (4) |
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2.2 Semiconductor diode laser structures |
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14 | (6) |
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2.2.1 Homojunction lasers |
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14 | (1) |
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2.2.2 Double-heterostructure lasers |
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15 | (2) |
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2.2.3 Quantum well lasers |
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17 | (2) |
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2.2.4 Quantum dots lasers |
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19 | (1) |
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2.3 Basic characteristics of diode lasers |
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20 | (9) |
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2.3.1 Threshold condition |
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20 | (4) |
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24 | (2) |
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2.3.3 Beam divergence and astigmatism |
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26 | (1) |
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27 | (2) |
3. Tunable Monolithic Semiconductor Diode Lasers |
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29 | (34) |
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29 | (3) |
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29 | (3) |
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3.2 Tunable monolithic diode lasers |
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32 | (7) |
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3.2.1 Distributed Bragg reflector diode laser |
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33 | (5) |
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3.2.1.1 Bragg wavelength control |
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35 | (1) |
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36 | (1) |
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3.2.1.3 Bragg wavelength and phase control |
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37 | (1) |
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3.2.2 Distributed feedback diode laser |
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38 | (1) |
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3.2.2.1 Corrugation phase control |
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38 | (1) |
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38 | (1) |
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3.2.3 Summary of tunable monolithic diode laser |
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39 | (1) |
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3.3 Widely tunable diode lasers |
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39 | (24) |
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40 | (3) |
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3.3.1.1 Sampled grating DBR (SGDBR) lasers |
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41 | (1) |
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3.3.1.2 Superstructure-grating DBR (SSGDBR)lasers |
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42 | (1) |
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3.3.2 Grating-assisting co-directional coupler (GACC-DBR) |
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43 | (2) |
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3.3.3 Grating-coupled sampled-reflector (GCSR) |
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45 | (3) |
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48 | (2) |
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3.3.5 Vertical-cavity surface-emitting lasers (VCSEL) |
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50 | (4) |
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3.3.6 Other widely tunable monolithic diode lasers |
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54 | (10) |
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3.3.6.1 Double-ring resonant coupled lasers |
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55 | (2) |
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3.3.6.2 Lensless tunable external cavity lasers |
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57 | (6) |
4. Elements for Tunable External Cavity Diode Lasers |
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63 | (30) |
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63 | (1) |
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4.2 Optical coupling components |
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64 | (10) |
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4.2.1 Optical coating on laser facet |
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65 | (5) |
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4.2.2 Diode laser collimators |
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70 | (2) |
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4.2.3 Beam expander and shaping |
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72 | (1) |
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73 | (1) |
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4.3 Electrical control parts |
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74 | (3) |
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74 | (1) |
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75 | (1) |
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4.3.3 Temperature and current controller |
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75 | (1) |
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4.3.4 Piezoelectrical transducer (PZT) |
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76 | (1) |
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4.4 Mechanically tuned mode-selection filters |
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77 | (6) |
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4.4.1 Diffraction gratings |
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77 | (4) |
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4.4.2 Fiber Bragg gratings |
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81 | (1) |
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4.4.3 Fabry-Perot interferometer and bandpass interference filter |
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82 | (1) |
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4.5 Electronically tuned mode selection filters |
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83 | (10) |
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4.5.1 Liquid crystal spatial light modulator |
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83 | (4) |
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84 | (1) |
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4.5.1.2 Amplitude modulation |
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85 | (1) |
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86 | (1) |
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4.5.2 Birefringence filter |
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87 | (2) |
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4.5.3 Acousto-optic tunable filter |
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89 | (4) |
5. Systems for Tunable External Cavity Diode Lasers |
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93 | (40) |
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5.1 Optical feedback in external cavity diode lasers |
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93 | (12) |
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5.1.1 General effects of external optical feedback on diode lasers |
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94 | (8) |
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5.1.1.1 Three-mirror laser cavity model |
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94 | (2) |
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5.1.1.2 External cavity modes |
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96 | (3) |
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5.1.1.3 Dynamical properties |
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99 | (3) |
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5.1.2 Implementation of optical feedback |
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102 | (3) |
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5.2 Spectral characteristics of ECDLs |
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105 | (6) |
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106 | (1) |
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5.2.0.2 Single-mode tunability |
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107 | (1) |
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108 | (2) |
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5.2.0.4 Wavelength dependence of temperature |
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110 | (1) |
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5.3 System of tunable external cavity diode lasers |
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111 | (14) |
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112 | (9) |
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121 | (1) |
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122 | (3) |
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5.3.3.1 Threshold current |
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123 | (1) |
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124 | (1) |
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5.4 Geometry for mode-hop suppression |
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125 | (8) |
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5.4.1 Littrow configuration |
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125 | (5) |
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130 | (3) |
6. Implementation of Tunable External Cavity Diode Lasers |
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133 | (42) |
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6.1 Widely continuous tunable ECDLs |
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133 | (7) |
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6.1.1 Mechanical wide tuning |
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133 | (3) |
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6.1.2 Micro-electro-mechanical-system wide tuning |
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136 | (4) |
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6.2 Electronically tuning external cavity diode laser |
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140 | (21) |
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6.2.1 Wavelength tunability by acousto-optic modulator |
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141 | (7) |
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6.2.2 Frequency chirping by electro-optic modulator |
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148 | (11) |
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6.2.3 Wavelength tunability by liquid crystal display |
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159 | (2) |
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6.3 Miscellaneous external cavity diode lasers |
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161 | (14) |
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6.3.1 Blue-violet external cavity diode lasers |
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162 | (3) |
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6.3.2 High power external cavity diode lasers |
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165 | (4) |
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6.3.3 Broadly tunable quantum dots lasers |
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169 | (6) |
7. Frequency Stabilization of Tunable External Cavity Diode Lasers |
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175 | (22) |
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175 | (1) |
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7.2 Basic concepts of frequency stabilization |
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176 | (2) |
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7.3 Frequency stabilization schemes and apparatus |
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178 | (13) |
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7.3.1 Interferometers: F-P etalon |
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178 | (2) |
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7.3.2 Atomic transition line |
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180 | (6) |
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7.3.2.1 Saturated absorption |
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180 | (3) |
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7.3.2.2 Dichroic-Atomic-Vapor Laser Lock (DAVLL) |
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183 | (3) |
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7.3.3 Gas molecular absorption |
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186 | (3) |
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7.3.4 Persistent spectral hole burning |
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189 | (2) |
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7.4 Other frequency stabilization schemes |
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191 | (6) |
8. Applications of Tunable External Cavity Diode Lasers |
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197 | (38) |
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8.1 Atomic clocks and magnetometry |
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197 | (4) |
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198 | (1) |
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8.1.2 Atomic magnetometer |
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199 | (2) |
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8.2 High resolution laser spectroscopy |
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201 | (5) |
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8.3 Quantum manipulation and engineering |
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206 | (2) |
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8.4 Actively mode locked diode lasers |
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208 | (13) |
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8.5 Nonlinear frequency conversion |
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221 | (7) |
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8.5.1 Second harmonic generation |
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221 | (5) |
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8.5.2 Frequency quadrupling |
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226 | (2) |
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8.6 Optical telecommunication |
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228 | (2) |
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8.6.1 Coherent system and DWDM |
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228 | (1) |
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8.6.2 Testing and measurement |
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229 | (1) |
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230 | (5) |
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8.7.1 Gas monitoring sensor |
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231 | (2) |
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233 | (2) |
9. Conclusions |
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235 | (2) |
Bibliography |
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237 | (22) |
Index |
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259 | |