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E-raamat: Multifunctional Oxide Heterostructures [Oxford Scholarship Online e-raamatud]

Edited by (Distinguished Professor of Physics, University of Tennessee), Edited by (Charles Bessey Professor of Physics, University of Nebraska-Lincoln), Edited by (Harvey D. Spangler Distinguished Professor, University of Wisconsin-Madison), Edited by (Plato Malozemoff Profe)
  • Formaat: 416 pages, 200 b/w illustrations, 24 colour illustrations
  • Ilmumisaeg: 13-Sep-2012
  • Kirjastus: Oxford University Press
  • ISBN-13: 9780199584123
  • Oxford Scholarship Online e-raamatud
  • Raamatu hind pole hetkel teada
  • Formaat: 416 pages, 200 b/w illustrations, 24 colour illustrations
  • Ilmumisaeg: 13-Sep-2012
  • Kirjastus: Oxford University Press
  • ISBN-13: 9780199584123
This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts.

The book consists of chapters on some of the key innovations in the field over recent years, including strongly correlated oxide heterostructures, magnetoelectric coupling and multiferroic materials, thermoelectric phenomena, and two-dimensional electron gases at oxide interfaces. The book covers the core principles, describes experimental approaches to fabricate and characterize oxide heterostructures, demonstrates new functional properties of these materials, and provides an overview of novel applications.
List of contributors
xv
PART I FUNDAMENTALS
1 A brief introduction to strongly correlated electronic materials
3(35)
E. Dagotto
Y. Tokura
1.1 Motivation
3(1)
1.2 Introduction
3(2)
1.3 Why correlated electrons?
5(1)
1.4 Control of correlated electrons in complex oxides
6(5)
1.5 Ordering of charge, spin, and orbital degrees of freedom
11(3)
1.6 Model Hamiltonians
14(1)
1.7 Intrinsically inhomogeneous states
15(3)
1.8 Giant responses in correlated electron systems
18(6)
1.9 Importance of quenched disorder and strain
24(4)
1.10 Outlook for correlated-electron technology; spintronics, double perovskites, multiferroics, orbitronics, resistance switching
28(4)
1.11 Conclusions
32(6)
Acknowledgments
32(1)
References
32(6)
2 Magnetoelectric coupling and multiferroic materials
38(35)
Gustau Catalan
James F. Scott
2.1 Introduction: magnetoelectric coupling and multiferroic materials
38(2)
2.2 Magnetoelectric coupling
40(4)
2.2.1 Linear coupling: Dzyaloshinskii-Moriya effect, electrically induced spin canting, and Shtrikman limit
41(1)
2.2.2 Biquadratic (strain mediated) coupling
42(1)
2.2.3 Perovskite oxides: why are they seldom multiferroic?
43(1)
2.3 Magnetoelectric multiferroics
44(29)
2.3.1 Perovskites with ferroelectricity caused by lone-pair polarization: BiFeO3
44(2)
2.3.2 Oxides with ferroelectricity caused by spins spirals: TbMnO3, TbMn2O5
46(1)
2.3.3 Hexagonal multiferroics: YMnO3
46(1)
2.3.4 Unconfirmed oxide multiferroics: RNiO3 (R = rare earth or Bi)
47(1)
2.3.5 Magnetoelectric relaxors
48(3)
2.3.6 Ferromagnetic ferroelectric fluorides
51(4)
2.3.7 Ferrimagnetic ferroelectrics
55(2)
Appendix 2.1 Magnetoelectric measurements
57(2)
Appendix 2.2 Critical exponents in isostructural phase transitions
59(2)
References
61(12)
PART II OXIDE FILMS AND INTERFACES: GROWTH AND CHARACTERIZATION
3 Synthesis of epitaxial multiferroic oxide thin films
73(26)
Thomas Tybell
Chang-Beom Eom
3.1 Introduction
73(2)
3.2 Substrates
75(4)
3.2.1 Strain, orientation, and symmetry control by choice of substrate
75(2)
3.2.2 Substrate termination and surface quality
77(2)
3.3 Strain engineering as a tool for controlling functional oxide thin films
79(7)
3.3.1 SrRuO3---a case study of strain engineering
80(6)
3.3.2 Effect of defects
86(1)
3.4 Vicinal control of functional properties
86(9)
3.4.1 SrRuO3---a case study of vicinal control of orthorhombic domain structure
87(1)
3.4.2 BiFeO3 ---domain control of a prototype rhombohedral material by substrate miscut
88(3)
3.4.3 Mono-domain samples---enabling fundamental studies and enhanced properties of BiFeO3
91(4)
3.5 Conclusions
95(4)
Acknowledgments
96(1)
References
96(3)
4 Synchrotron X-ray scattering studies of oxide heterostructures
99(24)
Dillon D. Fong
4.1 Introduction
99(1)
4.2 Surface X-ray diffraction
100(5)
4.3 Resonant scattering
105(10)
4.4 Anisotropic effects
115(3)
4.5 Summary
118(5)
Acknowledgments
118(1)
References
118(5)
5 Scanning transmission electron microscopy of oxides
123(34)
M. Varela
C. Leon
J. Santamaria
S. J. Pennycook
5.1 Introduction to STEM
123(5)
5.2 Stem imaging
128(7)
5.2.1 Probe formation
129(1)
5.2.2 Time reversal symmetry in electron microscopy
130(1)
5.2.3 Image simulation
131(4)
5.3 Mapping materials properties through EELS fine structure
135(3)
5.4 Applications: interfaces in manganite/cuprate heterostructures
138(12)
5.5 Summary
150(7)
Acknowledgments
150(1)
References
151(6)
6 Advanced modes of piezoresponse force microscopy for ferroelectric nanostructures
157(26)
A. Gruverman
6.1 Introduction
157(1)
6.2 Ferroelectric structures and size effects
158(4)
6.3 Advanced modes of PFM
162(12)
6.3.1 Resonance-enhanced PFM: static domain imaging
162(3)
6.3.2 Stroboscopic PFM: domain switching dynamics
165(5)
6.3.3 PFM Spectroscopy: spatial variability of switching parameters
170(4)
6.4 Summary
174(9)
Acknowledgments
175(1)
References
175(8)
PART III OXIDE FILMS AND INTERFACES: FUNCTIONAL PROPERTIES
7 General considerations of the electrostatic boundary conditions in oxide heterostructures
183(31)
Takuya Higuchi
Harold Y. Hwang
7.1 Introduction
183(2)
7.2 The polar discontinuity picture
185(7)
7.2.1 Stability of ionic crystal surfaces
185(2)
7.2.2 Stability of covalent surfaces
187(1)
7.2.3 Polar semiconductor interfaces
188(4)
7.3 Metallic conductivity between two insulators
192(4)
7.3.1 The polar discontinuity scenario
193(1)
7.3.2 Oxygen vacancy formation during growth
194(1)
7.3.3 Intermixing and local bonding at the interface
194(2)
7.3.4 Reconciling the various mechanisms
196(1)
7.4 The local charge neutrality picture
196(7)
7.4.1 Unit-cells in ionic crystals
196(2)
7.4.2 LaAlO3/SrTiO3 in the local charge neutrality picture
198(1)
7.4.3 Coupling of polar discontinuities
199(2)
7.4.4 Modulation doping by a proximate polar discontinuity
201(1)
7.4.5 Advantages of the local charge neutrality picture
202(1)
7.5 Equivalence of the two pictures
203(2)
7.5.1 Gauss' law for infinite crystals
203(1)
7.5.2 Gauss' law for finite crystals
204(1)
7.6 Further discussions
205(4)
7.6.1 Effect of iuterdiffusion
205(2)
7.6.2 Role of correlation effects
207(1)
7.6.3 Quadrupolar discontinuity
207(2)
7.7 Summary
209(5)
Acknowledgments
210(1)
References
210(4)
8 Strongly correlated heterostructures
214(40)
Satoshi Okamoto
8.1 Introduction
214(4)
8.2 Theoretical description
218(8)
8.2.1 Model
218(4)
8.2.2 Layer-extension of dynamical-mean-field theory
222(3)
8.2.3 Auxiliary particle methods
225(1)
8.3 Mott-insulator/band-insulator heterostructures
226(6)
8.3.1 Lattice relaxation and charge redistribution
226(3)
8.3.2 Mott physics
229(3)
8.4 Superlattices of under-doped-cuprate/over-doped-cuprate
232(4)
8.5 Other directions
236(7)
8.5.1 Surface magnetism of double-exchange manganites
237(3)
8.5.2 Transport through two-terminal strongly correlated heterostructures
240(3)
8.6 Summary
243(11)
Acknowledgments
245(1)
References
245(9)
9 Manganite multilayers
254(42)
Anand Bhattacharya
Shuai Dong
Rong Yu
9.1 Motivation
254(1)
9.2 Introduction to manganites
255(1)
9.3 Theoretical description of manganite multilayers
256(3)
9.4 Synthesis and structure of manganite multilayers
259(3)
9.5 Recent progress on manganite multilayers
262(28)
9.5.1 Phase transitions and orbital order driven by strain
262(3)
9.5.2 Charge transfer and spin-polarized two-dimensional electron gas
265(2)
9.5.3 A-site ordering in short-period superlattices
267(6)
9.5.4 Tuning between ferromagnetism and antiferromagnetism
273(3)
9.5.5 Interfacial magnetism
276(2)
9.5.6 Metal-insulator transitions
278(7)
9.5.7 Half-manganite heterostructures: band lineup and magnetic interactions at interfaces
285(5)
9.6 Conclusions and outlook
290(6)
Acknowledgments
291(1)
References
291(5)
10 Thermoelectric oxides: films and heterostructures
296(23)
Hiromichi Ohta
Kunihito Koumoto
10.1 Introduction
296(1)
10.2 p-type layered cobalt oxide: Ca3Co4O9 films
297(3)
10.3 Heavily electron doped SrTiO3 films
300(6)
10.4 Two-dimensional electron gas
306(3)
10.5 Field effect thermopower modulation
309(3)
10.6 Summary
312(7)
References
312(7)
PART IV APPLICATIONS
11 High-k gate dielectrics for advanced CMOS
319(21)
Suman Datta
Darrell G. Schlom
11.1 Introduction
319(3)
11.2 High-k dielectric materials
322(1)
11.3 Metal-gate electrodes
323(3)
11.3.1 Poly-depletion elimination
323(1)
11.3.2 Interfacial layer control
323(1)
11.3.3 High-A: phonon screening
324(1)
11.3.4 Metal gates with "correct" work function
325(1)
11.4 High-k/metal-gate silicon FETs
326(4)
11.4.1 Integration
326(3)
11.4.2 Devices
329(1)
11.4.3 Reliability
329(1)
11.5 High-K/metal-gate nonsilicon FETs
330(10)
11.5.1 Integration
330(1)
11.5.2 Devices and characterization
331(3)
Acknowledgments
334(1)
References
335(5)
12 FeFET and ferroelectric random access memories
340(24)
Hiroshi Ishiwara
12.1 Overview of ferroelectric random access memories (FeRAMs)
340(2)
12.2 Ferroelectric films used for FeRAMs
342(7)
12.2.1 Properties necessary for FeRAMs
342(2)
12.2.2 Pb(Zr, Ti)O3 and Bi-layer structured ferroelectrics
344(2)
12.2.3 Novel ferroelectric films with large remanent polarization
346(3)
12.3 Cell structure and operation principle of capacitor-type FeRAMs
349(8)
12.3.1 Cell structure of 1T1C(2T2C)-type FeRAMs
349(3)
12.3.2 Operation principle of 1T1C(2T2C)-type FeRAMs
352(2)
12.3.3 Other capacitor-type FeRAMs
354(3)
12.4 Cell structure and operation principle of FET-type FeRAMs
357(7)
12.4.1 Optimization of FeFET structure
357(1)
12.4.2 Data retention characteristics of FeFETs
358(2)
12.4.3 Cell array structures
360(2)
References
362(2)
13 LaAlO3/SrTi03-based device concepts
364(25)
Daniela F. Bogorin
Patrick Irvin
Cheng Cen
Jeremy Levy
13.1 Introduction
364(4)
13.1.1 Semiconductor 2DEGs
365(1)
13.1.2 2DEG at LaAlO3/SrTiO3 interface
365(1)
13.1.3 Polar catastrophe model
365(1)
13.1.4 Metal-insulator transition in LaAlO3/SrTiO3
366(1)
13.1.5 Inconsistencies with the polar catastrophe model
367(1)
13.2 Field-effect devices
368(2)
13.2.1 SrTiO3-based channels
368(1)
13.2.2 Electrical gating of LaAlO3/SrTiO3 structures
368(2)
13.2.3 LaAlO3/SrTiO3-based field-effect devices
370(1)
13.3 Reconfigurable nanoscale devices
370(11)
13.3.1 Nanoscale writing and erasing
371(1)
13.3.2 "Water cycle"
372(1)
13.3.3 LaAlO3/SrTiO3 as a floating-gate transistor network
373(1)
13.3.4 Quasi-OD structures
373(2)
13.3.5 Designer potential barriers
375(1)
13.3.6 SketchFET
376(2)
13.3.7 Nanoscale photodetectors
378(1)
13.3.8 Integration of LaAlO3/SrTiO3 with silicon
379(2)
13.4 Future prospects
381(8)
13.4.1 Room-temperature devices
382(1)
13.4.2 Information processing
382(1)
13.4.3 Spintronics
382(1)
13.4.4 Quantum Hall regime
383(1)
13.4.5 Superconducting devices
383(1)
13.4.6 Solid-state Hubbard simulators
383(1)
References
384(5)
Index 389
Evgeny Tsymbal is a Charles Bessey Professor at the Department of Physics and Astronomy of the University of Nebraska-Lincoln (UNL) and the Director of the UNL's Materials Research Science and Engineering Center (MRSEC). Evgeny Tsymbal's research is focused on computational materials science aiming at the understanding of fundamental properties of advanced ferromagnetic and ferroelectric nanostructures and materials relevant to nanoelectronics and spintronics. His research has been supported by the National Science Foundation, Semiconductor Research Corporation, the Office of Naval Research, the Department of Energy, Seagate Technology, and the W. M. Keck Foundation. Evgeny Tsymbal is a fellow of the American Physical Society, a fellow of the Institute of Physics, UK, and a recipient of the UNL's College of Arts & Sciences Outstanding Research and Creativity Award (ORCA).

Elbio Dagotto is a Distinguished Professor of Physics at the University of Tennessee, and Distinguished Scientist at the Materials Science and Technology Division of Oak Ridge National Laboratory. He specializes in the study of model Hamiltonians for systems where strong correlations among the electrons play a fundamental role, using a variety of many-body approximations particularly computational techniques. Dagotto's research has been mainly supported by the National Science Foundation and by the Department of Energy. Dagotto is Fellow of the American Association for the Advancement of Science and of the American Physical Society. He was member of the Solid State Sciences Committee of the National Academy of Sciences and divisional editor of the Physical Review Letters. As of September 2011, Dagotto has over 300 publications (h=62), and has directed the work of 13 graduate students and 24 postdoctoral assistants.

Chang-Beom Eom is currently a Harvey D. Spangler Distinguished Professor of Materials Science and Engineering and Physics at the University of Wisconsin-Madison. His research focuses on epitaxial thin film heterostructures of complex oxides, including ferroelectrics, piezoelectrics, multiferroics, superconductors, and novel two-dimensional electron gases at oxide interfaces, with an emphasis on understanding fundamental solid state phenomena and developing novel device applications.

Ramamoorthy Ramesh is currently the Plato Malozemoff Chair Professor in Materials Science and Physics at University of California, Berkeley. His current research interests include thermoelectric and photovoltaic energy conversion in complex oxide heterostructures. He has published extensively on the synthesis and materials physics of complex oxide materials. He received the Humboldt Senior Scientist Prize and Fellowship to the American Physical Society (2001). In 2005, he was elected a Fellow of American Association for the Advancement of Science as well as the David Adler Lectureship of the American Physical Society. In 2007, he was awarded the Materials Research Society David Turnbull Lectureship Award and in 2009, he was elected Fellow of MRS and is the recipient of the 2010 APS McGroddy New Materials Prize. He is currently serving as the Director of the Dollar a Watt, SunShot program at the U.S. Department of Energy, overseeing the R&D activities of the Solar Program.