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xv | |
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1 A brief introduction to strongly correlated electronic materials |
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3 | (35) |
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3 | (1) |
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3 | (2) |
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1.3 Why correlated electrons? |
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5 | (1) |
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1.4 Control of correlated electrons in complex oxides |
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6 | (5) |
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1.5 Ordering of charge, spin, and orbital degrees of freedom |
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11 | (3) |
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14 | (1) |
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1.7 Intrinsically inhomogeneous states |
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15 | (3) |
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1.8 Giant responses in correlated electron systems |
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18 | (6) |
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1.9 Importance of quenched disorder and strain |
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24 | (4) |
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1.10 Outlook for correlated-electron technology; spintronics, double perovskites, multiferroics, orbitronics, resistance switching |
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28 | (4) |
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32 | (6) |
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32 | (1) |
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32 | (6) |
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2 Magnetoelectric coupling and multiferroic materials |
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38 | (35) |
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2.1 Introduction: magnetoelectric coupling and multiferroic materials |
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38 | (2) |
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2.2 Magnetoelectric coupling |
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40 | (4) |
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2.2.1 Linear coupling: Dzyaloshinskii-Moriya effect, electrically induced spin canting, and Shtrikman limit |
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41 | (1) |
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2.2.2 Biquadratic (strain mediated) coupling |
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42 | (1) |
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2.2.3 Perovskite oxides: why are they seldom multiferroic? |
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43 | (1) |
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2.3 Magnetoelectric multiferroics |
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44 | (29) |
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2.3.1 Perovskites with ferroelectricity caused by lone-pair polarization: BiFeO3 |
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44 | (2) |
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2.3.2 Oxides with ferroelectricity caused by spins spirals: TbMnO3, TbMn2O5 |
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46 | (1) |
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2.3.3 Hexagonal multiferroics: YMnO3 |
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46 | (1) |
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2.3.4 Unconfirmed oxide multiferroics: RNiO3 (R = rare earth or Bi) |
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47 | (1) |
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2.3.5 Magnetoelectric relaxors |
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48 | (3) |
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2.3.6 Ferromagnetic ferroelectric fluorides |
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51 | (4) |
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2.3.7 Ferrimagnetic ferroelectrics |
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55 | (2) |
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Appendix 2.1 Magnetoelectric measurements |
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57 | (2) |
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Appendix 2.2 Critical exponents in isostructural phase transitions |
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59 | (2) |
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61 | (12) |
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PART II OXIDE FILMS AND INTERFACES: GROWTH AND CHARACTERIZATION |
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3 Synthesis of epitaxial multiferroic oxide thin films |
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73 | (26) |
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73 | (2) |
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75 | (4) |
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3.2.1 Strain, orientation, and symmetry control by choice of substrate |
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75 | (2) |
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3.2.2 Substrate termination and surface quality |
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77 | (2) |
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3.3 Strain engineering as a tool for controlling functional oxide thin films |
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79 | (7) |
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3.3.1 SrRuO3---a case study of strain engineering |
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80 | (6) |
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86 | (1) |
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3.4 Vicinal control of functional properties |
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86 | (9) |
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3.4.1 SrRuO3---a case study of vicinal control of orthorhombic domain structure |
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87 | (1) |
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3.4.2 BiFeO3 ---domain control of a prototype rhombohedral material by substrate miscut |
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88 | (3) |
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3.4.3 Mono-domain samples---enabling fundamental studies and enhanced properties of BiFeO3 |
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91 | (4) |
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95 | (4) |
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96 | (1) |
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96 | (3) |
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4 Synchrotron X-ray scattering studies of oxide heterostructures |
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99 | (24) |
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99 | (1) |
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4.2 Surface X-ray diffraction |
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100 | (5) |
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105 | (10) |
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115 | (3) |
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118 | (5) |
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118 | (1) |
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118 | (5) |
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5 Scanning transmission electron microscopy of oxides |
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123 | (34) |
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123 | (5) |
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128 | (7) |
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129 | (1) |
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5.2.2 Time reversal symmetry in electron microscopy |
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130 | (1) |
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131 | (4) |
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5.3 Mapping materials properties through EELS fine structure |
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135 | (3) |
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5.4 Applications: interfaces in manganite/cuprate heterostructures |
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138 | (12) |
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150 | (7) |
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150 | (1) |
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151 | (6) |
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6 Advanced modes of piezoresponse force microscopy for ferroelectric nanostructures |
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157 | (26) |
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157 | (1) |
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6.2 Ferroelectric structures and size effects |
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158 | (4) |
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6.3 Advanced modes of PFM |
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162 | (12) |
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6.3.1 Resonance-enhanced PFM: static domain imaging |
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162 | (3) |
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6.3.2 Stroboscopic PFM: domain switching dynamics |
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165 | (5) |
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6.3.3 PFM Spectroscopy: spatial variability of switching parameters |
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170 | (4) |
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174 | (9) |
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175 | (1) |
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175 | (8) |
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PART III OXIDE FILMS AND INTERFACES: FUNCTIONAL PROPERTIES |
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7 General considerations of the electrostatic boundary conditions in oxide heterostructures |
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183 | (31) |
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183 | (2) |
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7.2 The polar discontinuity picture |
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185 | (7) |
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7.2.1 Stability of ionic crystal surfaces |
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185 | (2) |
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7.2.2 Stability of covalent surfaces |
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187 | (1) |
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7.2.3 Polar semiconductor interfaces |
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188 | (4) |
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7.3 Metallic conductivity between two insulators |
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192 | (4) |
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7.3.1 The polar discontinuity scenario |
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193 | (1) |
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7.3.2 Oxygen vacancy formation during growth |
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194 | (1) |
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7.3.3 Intermixing and local bonding at the interface |
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194 | (2) |
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7.3.4 Reconciling the various mechanisms |
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196 | (1) |
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7.4 The local charge neutrality picture |
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196 | (7) |
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7.4.1 Unit-cells in ionic crystals |
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196 | (2) |
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7.4.2 LaAlO3/SrTiO3 in the local charge neutrality picture |
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198 | (1) |
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7.4.3 Coupling of polar discontinuities |
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199 | (2) |
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7.4.4 Modulation doping by a proximate polar discontinuity |
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201 | (1) |
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7.4.5 Advantages of the local charge neutrality picture |
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202 | (1) |
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7.5 Equivalence of the two pictures |
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203 | (2) |
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7.5.1 Gauss' law for infinite crystals |
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203 | (1) |
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7.5.2 Gauss' law for finite crystals |
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204 | (1) |
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205 | (4) |
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7.6.1 Effect of iuterdiffusion |
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205 | (2) |
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7.6.2 Role of correlation effects |
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207 | (1) |
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7.6.3 Quadrupolar discontinuity |
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207 | (2) |
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209 | (5) |
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210 | (1) |
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210 | (4) |
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8 Strongly correlated heterostructures |
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214 | (40) |
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214 | (4) |
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8.2 Theoretical description |
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218 | (8) |
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218 | (4) |
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8.2.2 Layer-extension of dynamical-mean-field theory |
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222 | (3) |
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8.2.3 Auxiliary particle methods |
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225 | (1) |
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8.3 Mott-insulator/band-insulator heterostructures |
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226 | (6) |
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8.3.1 Lattice relaxation and charge redistribution |
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226 | (3) |
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229 | (3) |
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8.4 Superlattices of under-doped-cuprate/over-doped-cuprate |
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232 | (4) |
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236 | (7) |
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8.5.1 Surface magnetism of double-exchange manganites |
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237 | (3) |
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8.5.2 Transport through two-terminal strongly correlated heterostructures |
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240 | (3) |
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243 | (11) |
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245 | (1) |
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245 | (9) |
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254 | (42) |
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254 | (1) |
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9.2 Introduction to manganites |
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255 | (1) |
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9.3 Theoretical description of manganite multilayers |
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256 | (3) |
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9.4 Synthesis and structure of manganite multilayers |
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259 | (3) |
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9.5 Recent progress on manganite multilayers |
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262 | (28) |
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9.5.1 Phase transitions and orbital order driven by strain |
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262 | (3) |
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9.5.2 Charge transfer and spin-polarized two-dimensional electron gas |
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265 | (2) |
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9.5.3 A-site ordering in short-period superlattices |
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267 | (6) |
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9.5.4 Tuning between ferromagnetism and antiferromagnetism |
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273 | (3) |
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9.5.5 Interfacial magnetism |
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276 | (2) |
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9.5.6 Metal-insulator transitions |
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278 | (7) |
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9.5.7 Half-manganite heterostructures: band lineup and magnetic interactions at interfaces |
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285 | (5) |
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9.6 Conclusions and outlook |
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290 | (6) |
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291 | (1) |
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291 | (5) |
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10 Thermoelectric oxides: films and heterostructures |
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296 | (23) |
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296 | (1) |
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10.2 p-type layered cobalt oxide: Ca3Co4O9 films |
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297 | (3) |
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10.3 Heavily electron doped SrTiO3 films |
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300 | (6) |
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10.4 Two-dimensional electron gas |
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306 | (3) |
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10.5 Field effect thermopower modulation |
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309 | (3) |
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312 | (7) |
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312 | (7) |
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11 High-k gate dielectrics for advanced CMOS |
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319 | (21) |
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319 | (3) |
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11.2 High-k dielectric materials |
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322 | (1) |
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11.3 Metal-gate electrodes |
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323 | (3) |
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11.3.1 Poly-depletion elimination |
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323 | (1) |
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11.3.2 Interfacial layer control |
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323 | (1) |
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11.3.3 High-A: phonon screening |
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324 | (1) |
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11.3.4 Metal gates with "correct" work function |
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325 | (1) |
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11.4 High-k/metal-gate silicon FETs |
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326 | (4) |
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326 | (3) |
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329 | (1) |
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329 | (1) |
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11.5 High-K/metal-gate nonsilicon FETs |
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330 | (10) |
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330 | (1) |
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11.5.2 Devices and characterization |
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331 | (3) |
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334 | (1) |
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335 | (5) |
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12 FeFET and ferroelectric random access memories |
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340 | (24) |
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12.1 Overview of ferroelectric random access memories (FeRAMs) |
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340 | (2) |
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12.2 Ferroelectric films used for FeRAMs |
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342 | (7) |
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12.2.1 Properties necessary for FeRAMs |
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342 | (2) |
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12.2.2 Pb(Zr, Ti)O3 and Bi-layer structured ferroelectrics |
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344 | (2) |
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12.2.3 Novel ferroelectric films with large remanent polarization |
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346 | (3) |
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12.3 Cell structure and operation principle of capacitor-type FeRAMs |
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349 | (8) |
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12.3.1 Cell structure of 1T1C(2T2C)-type FeRAMs |
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349 | (3) |
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12.3.2 Operation principle of 1T1C(2T2C)-type FeRAMs |
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352 | (2) |
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12.3.3 Other capacitor-type FeRAMs |
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354 | (3) |
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12.4 Cell structure and operation principle of FET-type FeRAMs |
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357 | (7) |
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12.4.1 Optimization of FeFET structure |
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357 | (1) |
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12.4.2 Data retention characteristics of FeFETs |
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358 | (2) |
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12.4.3 Cell array structures |
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360 | (2) |
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362 | (2) |
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13 LaAlO3/SrTi03-based device concepts |
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364 | (25) |
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364 | (4) |
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13.1.1 Semiconductor 2DEGs |
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365 | (1) |
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13.1.2 2DEG at LaAlO3/SrTiO3 interface |
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365 | (1) |
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13.1.3 Polar catastrophe model |
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365 | (1) |
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13.1.4 Metal-insulator transition in LaAlO3/SrTiO3 |
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366 | (1) |
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13.1.5 Inconsistencies with the polar catastrophe model |
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367 | (1) |
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13.2 Field-effect devices |
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368 | (2) |
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13.2.1 SrTiO3-based channels |
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368 | (1) |
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13.2.2 Electrical gating of LaAlO3/SrTiO3 structures |
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368 | (2) |
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13.2.3 LaAlO3/SrTiO3-based field-effect devices |
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370 | (1) |
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13.3 Reconfigurable nanoscale devices |
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370 | (11) |
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13.3.1 Nanoscale writing and erasing |
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371 | (1) |
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372 | (1) |
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13.3.3 LaAlO3/SrTiO3 as a floating-gate transistor network |
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373 | (1) |
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13.3.4 Quasi-OD structures |
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373 | (2) |
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13.3.5 Designer potential barriers |
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375 | (1) |
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376 | (2) |
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13.3.7 Nanoscale photodetectors |
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378 | (1) |
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13.3.8 Integration of LaAlO3/SrTiO3 with silicon |
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379 | (2) |
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381 | (8) |
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13.4.1 Room-temperature devices |
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382 | (1) |
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13.4.2 Information processing |
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382 | (1) |
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382 | (1) |
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13.4.4 Quantum Hall regime |
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383 | (1) |
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13.4.5 Superconducting devices |
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383 | (1) |
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13.4.6 Solid-state Hubbard simulators |
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383 | (1) |
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384 | (5) |
| Index |
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389 | |