| Preface |
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xi | |
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1 | (8) |
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2 | (2) |
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4 | (1) |
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1.3 Graphene-Electrolyte Systems |
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5 | (4) |
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2 Electrons in Semiconductors |
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9 | (40) |
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10 | (14) |
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10 | (2) |
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2.1.1.1 Electron scattering and mobility |
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12 | (2) |
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2.1.1.2 DC electrical conductivity |
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14 | (1) |
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2.1.2 Fermi-Dirac Distribution |
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14 | (4) |
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18 | (1) |
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2.1.3.1 Dispersion relation |
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18 | (2) |
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2.1.3.2 Nanoelectronic structures |
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20 | (2) |
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2.1.3.3 Density of states |
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22 | (2) |
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2.2 Nearly Free Electron Gas |
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24 | (12) |
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2.2.1 Modification to Dispersion Relation |
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24 | (1) |
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2.2.1.1 Crystal structure |
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25 | (1) |
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2.2.1.2 Reciprocal lattice and bandgap |
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26 | (5) |
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31 | (1) |
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2.2.3 Electronic Properties of Semiconductors |
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32 | (1) |
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2.2.3.1 Charge carrier density |
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32 | (2) |
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2.2.3.2 Quantum capacitance |
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34 | (2) |
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2.3 Electrons in Heterostructures |
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36 | (10) |
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2.3.1 Metals, Insulators, and Semiconductors |
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36 | (2) |
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38 | (1) |
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2.3.2.1 Metal--oxide--semiconductor systems |
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39 | (2) |
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2.3.2.2 Metal--semiconductor systems |
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41 | (2) |
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2.3.3 Field-Effect Transistors |
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43 | (3) |
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46 | (3) |
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49 | (18) |
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49 | (5) |
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3.1.1 Crystal Structure and Reciprocal Lattice |
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50 | (1) |
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3.1.2 Dispersion Relation |
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51 | (2) |
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53 | (1) |
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3.2 Electronic Properties of Graphene |
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54 | (8) |
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3.2.1 Charge Carrier Density and Doping |
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55 | (2) |
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3.2.2 Quantum Capacitance of Graphene |
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57 | (1) |
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3.2.3 Mobility and Scattering |
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58 | (1) |
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59 | (1) |
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60 | (2) |
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3.3 Nanoelectronic Applications |
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62 | (4) |
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3.3.1 Graphene Field-Effect Transistors |
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62 | (2) |
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3.3.2 Quantum Capacitance Devices |
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64 | (2) |
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66 | (1) |
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4 Electrons in Electrolyte |
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67 | (46) |
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68 | (13) |
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4.1.1 The Fluid Mechanics |
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68 | (1) |
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4.1.1.1 The Nernst-Planck equation |
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68 | (2) |
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4.1.1.2 Electrochemical potential |
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70 | (1) |
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71 | (2) |
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4.1.2 Marcus Theory for Electron Transfer |
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73 | (4) |
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4.1.3 The Gerischer Model |
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77 | (4) |
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81 | (4) |
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4.3 Non-Faradaic Processes |
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85 | (24) |
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4.3.1 Gouy--Chapman--Stern Theory |
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85 | (1) |
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4.3.1.1 The Gouy--Chapman theory |
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85 | (5) |
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90 | (3) |
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4.3.2 Modified Poisson--Boltzmann Model |
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93 | (6) |
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4.3.3 Ion Dynamics: The Vibration Model |
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99 | (1) |
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4.3.3.1 Ion dynamics by the Nernst--Planck equation |
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100 | (3) |
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103 | (2) |
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4.3.3.3 Ion vibration in electrical double layer |
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105 | (4) |
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109 | (4) |
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5 Graphene--Electrolyte Systems |
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113 | (20) |
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5.1 Physisorption and Chemisorption |
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114 | (8) |
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5.1.1 First-Principle Calculation and Doping |
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114 | (6) |
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5.1.2 Dielectric Screening |
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120 | (2) |
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5.2 Band Alignment Involving Electrolytes |
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122 | (5) |
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5.2.1 Metal--Electrolyte Systems |
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122 | (1) |
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5.2.2 Semiconductor--Electrolyte Systems and Photoelectrochemistry |
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123 | (4) |
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5.3 Graphene--Electrolyte Systems |
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127 | (3) |
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130 | (3) |
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6 Experimental Methods for Graphene |
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133 | (34) |
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133 | (6) |
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6.1.1 Mechanical Cleavage |
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134 | (1) |
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6.1.2 Liquid Phase Exfoliation |
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135 | (2) |
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6.1.3 Chemical Vapor Deposition and Plasma-Enhanced Chemical Vapor Deposition |
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137 | (1) |
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6.1.4 Molecular Beam Epitaxy and Thermal Annealing of SiC |
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138 | (1) |
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6.1.5 Comparison of Growth Techniques |
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139 | (1) |
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6.2 General Methods for Characterization |
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139 | (11) |
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6.2.1 Transmission Electron Microscopy and Atomic Force Microscopy |
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141 | (1) |
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142 | (3) |
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6.2.3 Electron Energy Loss Spectroscopy |
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145 | (1) |
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6.2.4 Angle-Resolved Photoemission Spectroscopy |
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146 | (1) |
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6.2.5 Four-Probe Measurement |
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147 | (3) |
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6.3 Classical Hall Effect of Graphene |
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150 | (17) |
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152 | (1) |
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152 | (2) |
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154 | (2) |
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6.3.1.3 The two-carrier model |
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156 | (4) |
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160 | (1) |
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160 | (2) |
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6.3.2.2 Van der Pauw method |
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162 | (5) |
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7 Experimental Methods for Electrolyte |
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167 | (18) |
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167 | (3) |
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7.2 Chronoamperometry and Circuit Analysis |
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170 | (5) |
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7.3 Electrochemical Impedance Spectroscopy |
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175 | (10) |
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7.3.1 Electric Circuit Elements |
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175 | (2) |
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7.3.2 Specific Circuit Elements |
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177 | (1) |
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7.3.3 Equivalent Circuits |
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178 | (1) |
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179 | (1) |
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7.3.3.2 Electrical circuits |
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180 | (5) |
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8 Applications and Outlook |
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185 | (44) |
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8.1 Conventional Electrical Biosensing |
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186 | (6) |
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186 | (2) |
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8.1.2 Ion-Sensitive Field-Effect Transistors |
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188 | (4) |
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8.2 Liquid-Gated Hall-Effect Biosensing |
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192 | (8) |
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8.2.1 Detection of L-Histidine in the pM Range |
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193 | (3) |
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8.2.2 Ion-Electron Interaction |
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196 | (3) |
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8.2.3 Advantages and Disadvantages |
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199 | (1) |
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8.3 Neural Activity Recording |
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200 | (2) |
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8.4 Fast Electronic Devices |
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202 | (2) |
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204 | (3) |
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Appendix A Moments of Boltzmann Transport Equation: The Fluid Equations |
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207 | (6) |
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207 | (2) |
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209 | (1) |
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210 | (1) |
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A.3.1 Continuity Equation |
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210 | (1) |
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A.3.2 Momentum Conservation |
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210 | (1) |
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A.3.3 Energy Conservation |
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211 | (2) |
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Appendix B Electric Field in the Compact Stern Layer |
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213 | (4) |
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Appendix C The Poisson--Nernst--Planck Equation for the Compact Stern Layer |
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217 | (4) |
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C.1 General Form to Find Potential Distribution |
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217 | (1) |
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C.2 Net Charge Density in Sublayer i |
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218 | (3) |
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Appendix D Conductivities of Sublayer I in the Compact Stern Layer |
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221 | (4) |
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222 | (1) |
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222 | (3) |
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Appendix E Constant Variables in the Compact Stern Layer at High Potential |
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225 | (2) |
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Appendix F Fabrication Process of a Graphene Hall Device |
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227 | (2) |
| References |
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229 | (22) |
| Index |
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251 | |