| Preface |
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xi | |
| 1 Introduction: Cold Plasmas and Surface Processing |
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1 | (16) |
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4 | (2) |
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1.2 Cold Plasma in the Industry |
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6 | (1) |
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1.3 Cold Plasma Chemistry |
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7 | (1) |
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8 | (1) |
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1.5 Surface Treatments with Cold Plasmas |
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9 | (2) |
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1.6 Controlled-Fusion Plasmas |
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11 | (2) |
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1.7 Medical and Biomedical Applications |
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13 | (4) |
| 2 Plasma-Enhanced Chemical Vapor Deposition of Thin Films |
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17 | (38) |
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17 | (2) |
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2.2 Effect of Gas Pressure on the Electrical Discharges between Two Electrodes |
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19 | (6) |
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19 | (4) |
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2.2.2 Thermal and Low-Temperature Plasma Discharges |
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23 | (2) |
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2.3 Elementary Collisional Processes in Plasma Discharges |
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25 | (12) |
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2.3.1 Elastic and Inelastic Collision Processes |
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25 | (6) |
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2.3.2 Effect of the Discharge Frequency on the Collision Processes |
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31 | (10) |
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2.3.2.1 Discharges at the DC-kHz regimes (ωkHz < ωi < ωe) |
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31 | (1) |
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2.3.2.2 Discharges at the MHz regime (ωi < ωrf < ωe) |
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32 | (2) |
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2.3.2.3 Discharges at the GHz regime (ωi < ωrf almost = to ωe) |
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34 | (3) |
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2.4 LP-PECVD vs. AP-PECVD of Thin Films |
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37 | (4) |
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2.5 PECVD of Thin Films under LP and AP Conditions: Some Examples |
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41 | (14) |
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2.5.1 Carbon-Based Compounds |
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42 | (3) |
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2.5.2 Silicon-Based Compounds |
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45 | (2) |
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2.5.3 Titanium-Based Compounds |
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47 | (8) |
| 3 Deposition of Porous Nanocolumnar Thin Films by Magnetron Sputtering |
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55 | (52) |
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3.1 Introduction to Magnetron Sputtering |
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55 | (13) |
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3.1.1 Nanostructuring Variables during Thin-Film Sputtering Deposition |
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57 | (2) |
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3.1.2 The Sputtering Mechanism |
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59 | (3) |
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3.1.3 Transport of Sputtered Species in the Plasma: Thermalization Degree |
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62 | (3) |
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3.1.4 Reactive Magnetron Sputtering |
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65 | (3) |
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3.2 Plasma-Assisted Deposition of Porous Nanocolumnar Thin Films |
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68 | (18) |
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3.2.1 The Oblique Angle Geometry |
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68 | (4) |
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3.2.2 Process-Control and Growth Mechanism |
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72 | (4) |
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3.2.3 Effect of the Kinetic Energy of the Deposition Species on the Nanocolumnar Growth of Thin Films |
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76 | (3) |
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3.2.4 Influence of Plasma-Nanocolumnar Film Interaction during Growth |
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79 | (2) |
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3.2.5 Reactive Magnetron Sputtering at Oblique Angles |
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81 | (2) |
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3.2.6 Growth of Nanocolumnar Thin Films on Patterned and Rough Substrates |
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83 | (3) |
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3.3 Nanostructure-Related Applications of Porous Nanocolumnar Thin Films |
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86 | (21) |
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3.3.1 Porous Magnetron Sputtered Thin Films |
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87 | (4) |
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3.3.2 Nanostructured Magnetron Sputtered Thin Films |
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91 | (6) |
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3.3.3 Nanostructured Thin Films Deposited on Patterned or Nanostructured Substrates |
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97 | (10) |
| 4 Atomic Species Generation by Plasmas |
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107 | (70) |
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107 | (22) |
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4.2 Plasma Sources of Neutral Atoms |
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129 | (15) |
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4.3 Production of O, H, and N Atoms in an Inductively Coupled RF Discharge |
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144 | (29) |
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146 | (13) |
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159 | (8) |
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167 | (6) |
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173 | (4) |
| 5 Surface Modification by Fusion Plasmas |
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177 | (46) |
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178 | (1) |
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5.2 Controlled Thermonuclear Fusion: Reactions and Devices |
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178 | (3) |
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5.3 Fusion Fuel and Reactor Components |
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181 | (2) |
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183 | (8) |
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5.5 Plasma-Wall Interactions |
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191 | (2) |
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5.6 Erosion Processes and Wall Materials |
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193 | (13) |
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5.6.1 Selection of Plasma-Facing Materials |
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193 | (2) |
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5.6.2 Erosion and Deposition |
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195 | (11) |
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5.6.2.1 Erosion-deposition under steady-state conditions |
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195 | (8) |
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5.6.2.2 Erosion under high-power loads and off- normal events |
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203 | (2) |
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5.6.2.3 Neutron-induced effects |
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205 | (1) |
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5.7 Tools for Material Migration Studies |
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206 | (6) |
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5.7.1 Erosion-Deposition Probes and Test Limiters |
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206 | (5) |
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211 | (1) |
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5.8 Analysis of Wall Materials |
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212 | (5) |
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213 | (2) |
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215 | (2) |
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217 | (6) |
| 6 Plasma-Assisted Wall Conditioning of Fusion Devices: A Review |
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223 | (36) |
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223 | (3) |
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6.2 Fundamentals of Wall Conditioning by Plasmas |
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226 | (4) |
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6.3 Kinds of Conditioning Plasmas |
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230 | (11) |
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6.3.1 Direct Current Glow Discharge |
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230 | (2) |
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6.3.2 Conditioning Techniques in the Presence of Magnetic Fields |
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232 | (2) |
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234 | (2) |
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6.3.4 MW Conditioning in Tokamaks |
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236 | (2) |
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6.3.5 High Temperature Plasma for Conditioning Purposes |
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238 | (2) |
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6.3.6 Taylor Discharge Cleaning |
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240 | (1) |
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241 | (2) |
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6.5 A Practical Case: Wall Conditioning of the TJ-II Stellarator |
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243 | (11) |
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6.5.1 He Glow Discharge during the First Campaigns of TJ-II |
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244 | (3) |
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6.5.2 Boronization of TJ-II |
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247 | (3) |
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6.5.3 Lithium Coating in TJ-II |
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250 | (4) |
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6.6 The Future: Wall Condition of Reactor-Oriented Fusion Devices |
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254 | (5) |
| 7 Cold Atmospheric Pressure Plasma Jets and Their Applications |
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259 | (26) |
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259 | (4) |
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7.1.1 Meaning of Cold Plasma |
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259 | (2) |
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7.1.2 Importance of Voltage Frequency, Gas Pressure, and Discharge Electrode Configuration in Plasma Sources Operation |
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261 | (2) |
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7.2 Atmospheric Pressure Plasma Sources: Principles, Design, and Models |
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263 | (5) |
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7.2.1 DBD and DBE Plasma Sources |
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265 | (1) |
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7.2.2 Expanding Plasmas, Plasma Jets |
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266 | (2) |
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7.3 Applications of Atmospheric Pressure Plasma Sources |
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268 | (11) |
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7.3.1 Surface Modification |
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269 | (3) |
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7.3.2 Coating of Surfaces by Deposition with Atmospheric Pressure Plasma Jets |
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272 | (1) |
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7.3.3 Surface Cleaning with Atmospheric Pressure Plasma Jets |
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273 | (2) |
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7.3.4 Atmospheric Pressure Plasma Processing of Liquid Solutions and Dispersions |
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275 | (4) |
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7.3.4.1 Degradation of chemical contaminants in solutions |
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276 | (2) |
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7.3.4.2 Plasma in-liquid processing of nanomaterials |
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278 | (1) |
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279 | (1) |
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7.4 Conclusions and Outlook |
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279 | (6) |
| 8 Plasma in Odontology |
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285 | (18) |
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285 | (1) |
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8.2 Surface Treatment of Materials or Medical Devices |
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286 | (4) |
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8.2.1 Peri-implant Osseointegration Improved by Plasma Treatment |
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286 | (2) |
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8.2.2 Increasing the Adhesion |
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288 | (1) |
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8.2.3 Plasma Cleaning and Antimicrobial Effect |
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289 | (1) |
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290 | (6) |
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8.3.1 Increasing the Adhesion |
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290 | (2) |
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8.3.2 Antimicrobial Effects |
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292 | (1) |
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8.3.3 Endodontic Applications of Cold Atmospheric Plasmas |
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292 | (2) |
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8.3.3.1 Plasma and disinfection |
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292 | (1) |
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8.3.3.2 Plasma and dentine wall |
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293 | (1) |
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294 | (1) |
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8.3.5 Periodontal Treatment |
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294 | (1) |
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8.3.6 Peri-implantitis Treatment |
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295 | (1) |
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8.4 Discussion and Conclusion |
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296 | (7) |
| Index |
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