Plenary Session: Invited Papers Chairmen: A. Senes H. Iwamoto Progress in Wide Bandgap Semiconductor SiC for Power Devices 3(8) Hiroyuki Matsunami A Review of RESURF Technology 11(8) Adriaan W. Ludikhuize Beyond Y2K: Technology Convergence as a Driver of Future Low-Voltage Power Management Semiconductors 19(6) Richard K. Williams Session: HVIGBT Chairmen: Y. Seki H.R. Zeller IEGT design concept against operation instability and its impact to application 25(4) Ichiro Omura Tomokazu Domon Toshiyuki Miyanagi Tsuneo Ogura Hiromichi Ohashi A High Voltage IGBT and Diode Chip Set designed for the 2.8 kV DC Link Level with Short Circuit Capability extending to the Maximum Blocking Voltage 29(4) Friedhelm Bauer Nando Kaminski Stefan Linder Hansruedi Zeller 4.5kV-2000A Power Pack IGBT (Ultra High Power Flat-Packaged PT type RC-IGBT) 33(4) Takeshi Fujii Koh Yoshikawa Takeharu Koga Akira Nishiura Yoshikazu Takahashi Hideaki Kakiki Masami Ichijyou Yasukazu Seki Experimental study on plasma engineering in 6500V IGBTs 37(6) Tobias Wikstrom Friedhelm Bauer Stefan Linder Wolfgang Fichtner Session: LDMOS Chairmen: M. Darwish I. Yoshida Low Voltage CMOS Compatible Power MOSFET for On-Chip DC/DC Converters 43(4) Sameh G. Nassif-Khalil Shahla Honarkhah C. Andre T. Salama Improved 20V Lateral Trench Gate Power MOSFETs with Very Low On-resistance of 7.8 m.mm2 47(4) Akio Nakagawa Yusuke Kawaguchi Complementary LDMOS transistors for a CMOS/BiCMOS process 51(4) S. Whiston D. Bain A. Deignan J. Pollard C. Ni Chleirigh C. Musgrave M. ONeill Folded Gate LDMOS with Low On-Resistance and High Transconductance 55(6) Shuming Xu Yuanzheng Zhu Pang-Dow Foo Yung C. Liang Johnny.K.O. Sin Session: Superjunction Chairmen: L. Lorenz A. Nakagawa Analysis of the Forward Biased Safe Operating Area of the Super Junction MOSFET 61(4) B. Zhang Z. Xu A.Q. Huang MDmeshTM: innovative technology for high voltage Power MOSFETs 65(4) M. Saggio D. Fagone S. Musumeci A New Generation of Power Unipolar Devices: the Concept of the FLoating Islands MOS Transistor (FLIMOST) 69(4) N. Cezac P. Rossel F. Morancho H. Tranduc A. Peyre-Lavigne Which is cooler, Trench or Multi-Epitaxy? 73(4) T. Minato T. Nitta A. Uenisi M. Yano M. Harada S. Hine Experimental Results and Simulation Analysis of 250V Super Trench Power MOSFET (STM) 77(6) T. Nitta T. Minato M. Yano A. Uenisi M. Harada Session: Process Integration Chairmen: C.A.T. Salama J.K.O. Sin Advantages of Thick CVD Gate Oxide for Trench MOS Gate Structures 83(4) K. Nakamura S. Kusunoki H. Nakamura M. Harada Trench Corner Rounding Technology Using Hydrogen Annealing for Highly Reliable Trench DMOSFETs 87(4) S.G. Kim J. Kim J. Gun Koo K. Soo Nam K.I. Cho Advanced On-Chip Polysilicon CMOS Analog and Driver Circuit Technology for Intelligent Discrete Devices 91(6) T. Matsudai T. Kojima A. Nakagawa Session: SiC Chairmen: T.P. Chow J.L. Glenn High Temperature Static and Dynamic Characteristics of 3.7kV High Voltage 4H-SiC JBS 97(4) K. Asano T. Hayashi R. Saito Y. Sugawara 1500 V, 4 Amp 4H-SiC JBS Diodes 101(4) R. Singh S.H. Ryu J.W. Palmour A.R. Hefner J. Lai 4.5 kV Novel High Voltage High Performance SiC-FET ``SIAFET 105(4) Y. Sugawara K. Asano R. Singh J. Palmour D. Takayama Novel Power MOS Devices with SiGe/Si Heterojunctions 109(6) Ping Li Yajuan Su Mengsi You Xuening Li Session: Diodes Chairmen: P. Spirito W. Fichtner 6.5 kV Ultra Soft & Fast Recovery Diode (U-SFD) with High Reverse Recovery Capability 115(4) M. Mori H. Kobayashi Y. Yasuda An Advanced FWD Design Concept with Superior Soft Reverse Recovery Characteristics 119(4) M. Nemoto A. Nishiura T. Naito M. Kirisawa M. Otsuki Y. Seki A New Degree of Freedom in Diode Optimization: Arbitrary Axial Lifetime Profiles by Means of lon Irradiation 123(4) P. Hazdra J. Vobecky N. Galster O. Humbel T. Dalibor Real Time Calculation of the Chip Temperature of Power Modules in PWM Inverters Using a 16 bit Microcontroller 127(6) T. Reimann R. Krummer U. Franke J. Petzoldt L. Lorenz Poster Session High Voltage Driver built in a low voltage 0.18 m CMOS for Cache Redundancy Applications in Microprocessors 133(4) A. Bergemont I. Saadat P. Francis C. Pichler H. Haggag A. Kalnitsky A SOI LDMOS/CMOS/BJT Technology for Fully-Integrated RF Power Amplifiers 137(4) Y. Tan M. Kumar J.K.O. Sin L. Shi J. Lau Advanced Power Copper Technology for SMARTMOSTM Application Designs 141(4) I. Pages B. Baird J. Wang T. Sicard J.M. Dorkel P. Dupuy P. Lance E. Huynh Y. Chung Optimization of the Body-Diode of Power MOSFETs for High Efficiency Synchronous Rectification 145(4) J. Zeng C.F. Wheatley R. Stokes C. Kocon S. Benczkowski A Fast-Switching SOI SA-LIGBT without NDR region 149(4) J.H. Chun D.S. Byeon J.K. Oh M.K. Han Y.I. Choi Improved Device Ruggedness by Floating Buffer Ring 153(4) A.W. Ludikhuize A. Heringa R. Van Roijen J. Van Zwol Implant Spacer Optimization for the Improvement of Power MOSFETs Unclamped Inductive Switching (UIS) And High Temperature Breakdown 157(4) C. Kocon J. Zeng R. Stokes Comparison of High-Frequency Performance of Quasi-SOI and Conventional SOI Power Mosfets 161(4) Y. Hiraoka S. Matsumoto T. Sakai Reliability Characterization of LDMOS Transistors submitted to Multiple Energy Discharges 165(4) J.M. Bosc I. Percheron-Garcon E. Huynh P. Lance I. Pages J.M. Dorkel G. Sarrabayrouse Substrate Current Protection in Smart Power ICs 169(4) O. Gonnard G. Charitat Ph. Lance E. Stefanov M. Suquet M. Bafleur N. Mauran A. Peyre-Lavigne Physical Compact Modeling of Layout Dependent Metal Resistance in Integrated LDMOS Power Devices 173(4) M.L. Kniffin R. Thoma J. Victory Single Poly EEPROM for Smart Power ICs 177(4) E. Carman P. Parris H. Chaffai F. Cotdeloup S. Debortoli E. Hemon J. Lin-Kwang O. Perat T. Sicard Tungsten and Tungsten Silicide (WSix) as Gate materials for Trench MOSFETs 181(4) S. Ambadi D. Hannoun K. Kitt C. Garcia J. Pearse Resurfed Lateral Bipolar Transistors for High-Voltage, High-Frequency Applications 185(4) G.J. Cao M.M. De Souza E.M.S. Narayanan A Unifield High Accuracy SPICE Library For The Power Semiconductor Devices Built With The Analog Behavioral Macromodeling Technique 189(4) A. Maxim D. Andreu J. Boucher A 0.8 m-Standard CMOS Merges One-Wire Protocol Interpreter and 2.5 A-18 V Power Switch to Accomplish Low-Cost Automotive Network 193(4) C.A. dos Reis Filho J.A.P. Seminario M. Jara S. Finco W. Luque A Novel Vertical Deep Trench RESURF DMOS (VTR-DMOS) 197(4) J.L. Glenn J. Siekkinen Minority carrier injection across the 3D RESURF junction 201(4) F. Udrea A. Popescu R. Ng G.A.J. Amaratunga Dielectric Charge Traps: A New Structure Element for Power Devices 205(4) H. Kapels R. Plikat D. Silber IGBT Module Setup with Integrated Micro-Heat Sinks 209(4) T. Steiner R. Sittig SiC Power devices with low on-resistance for fast switching applications 213(4) P. Friedrichs H. Mitlehner K.O. Dohnke D. Peters R. Schorner U. Weinert E. Baudelot D. Stephani High Performance 300 V IGBTs 217(4) P.M. Shenoy J. Yedinak J. Gladish 4500 V Trench IEGTs Having Superior Turn-on Switching Characteristics 221(4) H. Ninomiya J. Takahashi K. Sugiyama T. Inoue S. Hasegawa T. Ogura H. Ohashi Evaluation of 600 V/100 A NPT-IGBT with a non-self-align shallow p-well formation techniques 225(4) M. Otsuki S. Momota M. Kirisawa H. Wakimoto Y. Seki Double-Side Packaged, High Power IGBTs for Improved Thermal and Switching Characteristics 229(4) S. Zhao J.K.O. Sin Static and Dynamic Characteristics of 600-V, 10-A Trench Bipolar Junction Diodes 233(4) B. You A.Q. Huang J.K.O. Sin A. Xu The Monolithic Bidirectional Switch (MBS) 237(4) F. Heinke R. Sittig Characterization of fast 4.5 kV SiC P-N diodes 241(4) D. Peters P. Friedrichs H. Mitlehner R. Schoerner U. Weinert B. Weis D. Stephani Over 2000 V FLR Termination Technologies for SiC High Voltage Devices 245(4) H. Onose S. Oikawa T. Yatsuo Y. Kobayashi A Newly Structured High Voltage Diode Highlighting Oscillation Free Function In Recovery Process 249(4) K. Satoh K. Morishita Y. Yamaguchi N. Hirano H. Iwamoto A. Kawakami Physical phenomena in Si Power diodes operating at high carrier injection levels and high temperature 253(4) L.M. Hillkirk B. Breitholtz J. Lutz Junction Termination Technique for Super Junction Devices 257(6) Y. Bai A.Q. Huang X. Li The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions 263(4) T. Trajkovic F. Udrea P.R. Waind G.A.J. Amaratunga Light-Triggered Thyristors with Integrated Protection Functions 267(4) F.J. Niedernostheide H.J. Schulze J. Dorn U. Kellner-Werdehausen D. Westerholt Thermal analysis of high power IGBT modules 271(4) Z. Khatir S. Lefebvre Comparison of Stripe and Cellular Geometry for Short Circuit Rated Trench IGBT 275(4) C.M. Yun H.C. Kim K.H. Lee J.I. Kim T.H. Kim 600 V Trench-gate NPT-IGBT with Excellent Low On-State Voltage 279(4) M. Tanaka S. Teramae Y. Takahashi T. Takeda M. Yamaguchi T. Ogura T. Tsunoda S. Nakao Experimental Measurements of Recombination Lifetime in Proton Irradiated Power Devices 283(4) S. Daliento A. Sanseverino P. Spirito G. Busatto J. Wiss Electrical and Electrothermal 2D Simulations of a 4H-SiC High Voltage Current Limiting Device for Serial Protection Applications 287(4) F. Nallet A. Senes D. Planson M.L. Locatelli J.P. Chante D. Renault Comparison between Finite-Element and Analytical Calculations for the Life-time Estimation of Bond Wires in IGBT Modules 291(4) C. Hager A. Stuck Y. Tronel R. Zehringer W. Fichtner A Novel free wheeling diode for 1700 V IGBT module 295(4) N. Iwamuro F. Nagaune T. Iwaana Y. Seki Carrier Lifetime Characterization Using an Optimized Free Carrier Absorption Technique 299(4) F. Hille L. Hoffmann H.J. Schulze G. Wachutka Modelling and Simulation of the Transient Electromagnetic Behavior of High Power Bus Bars under Switching Conditions 303(6) P. Bohm G. Wachutka 2.3 kVac 100 MHz Multi-hannel Monolithic Isolator IC 309(4) Y. Kojima M. Nemoto S. Yukutake T. Iwasaki M. Amishiro N. Kanekawa A. Watanabe Y. Takeuchi N. Akiyama A novel ``cool insulated base transistor 313(4) M.M. De Souza O. Spulber E.M.S. Narayanan A 0.35 m CMOS based smart power technology for 7 V-50 V applications 317(6) V. Parthasarathy R. Zhu M.L. Ger V. Khemka A. Bose R. Baird T. Roggenbauer D. Collins S.Chang P. Hui M. Zunino Session: Advanced BCD Chairmen: T.R. Efland C. Contiero LDMOS implementation in a 0.35 m BCD technology (BCD6) 323(4) A. Moscatelli A. Merlini G. Croce P. Galbiati C. Contiero A-BCD : An Economic 100 V RESURF Silicon-On-Insulator BCD Technology for Consumer and Automotive Applications 327(4) J. Van der Pol A.W. Ludikhuize H.G.A. Huizing B. van Velzen R.J.E. Hueting J.F. Mom G. Van Lijnschoten G.J.J. Hessels E.F. Hooghoudt R. van Huizen M.J. Swanenberg J.H.H.A Egbers F. Van den Elshout J.J. Koning H. Schligtenhorst J. Soeteman Multi-voltage Device integration technique for 0.5 μm BiCMOS & DMOS process 331(4) T. Terashima F. Yamamoto K. Hatasako A 65 V, 0.56 mΩ.cm2 Resurf LDMOS in a 0.35 μm CMOS Process 335(6) R. Zhu V. Parthasarathy A. Bose R. baird V. Khemka T. Roggenbauer D. Collins S. Chang P. Hui M.L. Ger M. Zunino Session: Energy Capability Chairmen: M.A. Briere A.W. Ludikhuize SCR-LDMOS - A novel LDMOS device with ESD robustness 341(4) S. Pendharkar R. Teggatz J. Devore J. Carpenter T. Efland C.Y. Tsai Using ``Adaptive Resurf to Improve the SOA of LDMOS Transistors 345(4) P. Hower J. Lin S. Merchant S. Paiva A New Power MOSFET Having Excellent Avalanche Capability 349(6) T. Uesugi T. Suzuki T. Murata S. Kawaji H. Tadano Session: IGBT Chairmen: Y. Uchida G. Amaratunga The Field Stop IGBT (FS IGBT) - A New Power Device Concept with a Great Improvement Potential 355(4) T. Laska M. Munzer F. Pfirsch C. Schaeffer T. Schmidt Analysis on the Low Current Turn-On Behavior of IGBT Module 359(4) S. Momota M. Otsuki K. Ishii H. Takubo Y. Seki Optimizing 600 V Punchthrough IGBTs for Uncfor Unclamped Inductive Switching (UIS) 363(4) J. Yedinak B. Wood P. Shenoy G. Dolny D. Lange T. Morthorst A New Void Free Soldering Process In Large-Area, High Power IGBT Modules 367(6) J. Onuki Y. Chonan T. Komiyama M. Nihei R. Saito M. Suwa M. Kitano Session: Trench Chairmen: D.M. Kinzer R.K. Williams High Density, Sub 10 mohm Rdson 100 Volt N-Channel FETs for Automotive Applications 373(4) S. Sobhani D. Kinzer L. Ma D. Asselanis A 0,35 m Trench Gate MOSFET with an Ultra Low On State Resistance and a High Destruction Immunity during the Inductive Switching 377(4) A. Narazaki J. Maruyama T. Kayumi H. Hamachi J. Moritani S. Hine High-Density Low On-Resistance Trench MOSFETs Employing Oxide Spacers And Self-Align Technique for DC/DC Converter 381(4) J. Kim T.M. Roh S.G. Kim Q.S. Song J.G. Koo K.S. Nam K.I. Cho D.S. Ma Dummy Gated Radio Frequency VDMOSFET with High Breakdown Voltage and Low Feedback Capacitance 385 S. Xu, C. Ren P.D. Foo Y. Liu Y. Su
