| Organizers |
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| International Programme Committee |
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| Foreword |
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| Contents |
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| Materials and technologies I |
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Diamond and cubic boron nitride: Synthesis and electronic applications |
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1 | (12) |
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The effect of polyamide fixation on thermal performance of GaAs cantilever based MEMS: A 3D numerical analysis with DEETEN |
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13 | (14) |
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| Materials and technologies II |
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A promising lead-free material for flip-chip bumps: Sn-Cu-RE |
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17 | (10) |
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Chip size packages with wafer-level ball attach and their reliability |
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27 | (4) |
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Deep reactive ion etching of silicon using an aluminum etching mask |
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31 | (4) |
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Optical properties investigations of organic Alq3 layers doped by DCM |
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35 | (4) |
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Liquid phase silylation of Shipley SPR500A-series resists using top surface imaging |
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39 | (4) |
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| POSTERS I - Materials and technologies |
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Formation of YBa2Cu3O7-x/MgO and YBa2Cu3O7-x/Si thin films by laser pulse crystallization and annealing |
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43 | (4) |
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Ti Zr dielectric layers deposited by hot target reactive magnetron sputtering |
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47 | (4) |
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Investigations of structural and electronic properties of TiO2-doped layers deposited by hot target reactive magnetron sputtering method |
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51 | (4) |
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Sn/Pd/GaAs ohmic contacts with reactive metals |
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55 | (4) |
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Synthesis and investigation of nanocrystalline SiC properties in sensor applications |
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59 | (4) |
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Set-up for combinatorial electrochemical synthesis and high-throughput investigation of organic semiconductor polymers for electronic devices |
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63 | (4) |
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PECVD nitrogen doped a-SiC:H films: Properties |
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67 | (4) |
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Charge properties of MIS structures Ni--DyxOy--n-Si (100) |
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71 | (4) |
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Design of strain gauge structure |
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75 | (4) |
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Electron emission from diamond layer on tungsten wire measured in cylindrical electrode system configuration |
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79 | (4) |
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Studies of dielectric characteristics of spin-coated polyimide films |
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83 | (4) |
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Thermal resistance of the semiconductor structures for a photomixing device |
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87 | (4) |
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InGaAs/InP avalanche photodiodes with a thin multiplication layer |
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91 | (4) |
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Interactions between phases and thermal stability of TiBx(ZrBx)--n-SiC 6H contacts |
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95 | (4) |
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Numerical simulation of parameters of ZnCdHgTe films and ZnCdHgTe-based heterostructures |
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99 | (4) |
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Raman spectroscopy of SixGe1-x compositional and temperature dependence |
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103 | (4) |
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Physical and structural characterization of NiO films for gas detection |
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107 | (4) |
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Some possibilities for determining the depth of the p-n junction and profiles of semiconductor layers |
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111 | (14) |
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| RF structures and devices |
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Resonant tunnelling diodes for digital circuit applications |
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115 | (10) |
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Microwave GaAs Schottky diode |
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125 | (4) |
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Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs |
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129 | (4) |
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Terahertz Bloch oscillations in semiconductor superlattices |
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133 | (4) |
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| Modeling and characterization I |
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Microstructure of indium-tin-oxide films deposited on glass substrates |
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137 | (4) |
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Breakdown mechanisms limiting the operation of double doped PHEMTs scaled into sub-100 nm dimensions |
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141 | (4) |
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Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs |
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145 | (4) |
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Photoluminescence characterisation of bismuth-doped GaSb |
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149 | (4) |
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Investigation of 4H-SiC diode with RuO2 Schottky contact by DLTS |
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153 | (4) |
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Characterization of delta-doped GaAs grown by MOVPE |
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157 | (18) |
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| Nanotechnology |
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Epitaxy -- Close and away from thermodynamic equilibrium |
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161 | (14) |
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Optical gain in GalnNAs/GaAs multi-quantum well structures |
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175 | (4) |
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Photoconductive terahertz emitter with an integrated semiconductor Bragg mirror |
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179 | (4) |
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MOVPE growth of 1220 nm (In,Ga)(As,P)/InP LED structures |
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183 | (4) |
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| Modeling and characterization II |
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Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation |
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187 | (4) |
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Strain and composition in thin SiGe buffer layers with high Ge content studied by micro-Raman spectroscopy |
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191 | (4) |
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Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy |
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195 | (4) |
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Evaluation of δ-layer depth profiles detected on beveled semiconductor structures by micro Raman spectroscopy |
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199 | (4) |
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Auger investigations of GaAs sputtered with low-energy Ar+ ions at glancing incidence |
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203 | (4) |
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GMR signal of Co-Ag layered structures in dynamic conditions of measurement |
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207 | (4) |
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| POSTERS II -- Modeling and characterization |
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New numerical power IGBT model and simulation of its electrical characteristics |
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211 | (4) |
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An analytical heterojunction diode model including the electron transport inside the depletion layer and the breakdown |
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215 | (4) |
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Heat transfer modeling in metal-semiconductor structures |
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219 | (4) |
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Modelling of the photodiode in various microwave applications |
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223 | (4) |
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A 0.35 μm CMOS linear differential amplifier independent of threshold voltage |
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227 | (4) |
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Profiling of a GaAs atructure using the probe method |
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231 | (4) |
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Stimulation of diamond growth on optically transparent non-conductive substrates |
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235 | (4) |
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Coplanar waveguide modeling based on scattering parameter measurements |
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239 | (4) |
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RF power transistor design in standard digital CMOS technology |
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243 | (4) |
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Carrier noise in mode-locked fibre grating external cavity lasers |
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247 | (4) |
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Crosstalk analysis in CMOS integrated circuits |
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251 | (4) |
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Comparison of nonvolatile memory cells for molybdenum gate analog BeCMOS process |
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255 | (16) |
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| Submicrometer structures |
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CMOS scaling to 25 nm gate lengths |
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259 | (12) |
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Process steps for a double gate MOSFET with vertical layout |
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271 | (4) |
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Thin low-temperature gate oxides for vertical field-effect transistors |
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275 | (4) |
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ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes |
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279 | (4) |
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| GaN structures |
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Photoenhanced wet etching of gallium nitride on submicrometer scale |
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283 | (4) |
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High-performance AlGaN/GaN HEMTs on silicon substrates |
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287 | (4) |
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RF small-signal and power characterization of AlGaN/GaN HEMTs |
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291 | (4) |
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MSM diodes based on an AlGaN/GaN HEMT layer structure for varactor and photodiode application |
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295 | (4) |
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Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs |
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299 | (4) |
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Analysis of I-V measurements on Pt/Au-GaN Schottky contacts in a wide temperature range |
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303 | (14) |
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| Chemical sensors |
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Interfacing chemistry with microdevices: Potential and challenges of chemical microsensors |
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307 | (10) |
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Impedance measurements of chemical gas sensors |
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317 | (4) |
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Thin films for electrochemical sensoric interfaces |
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321 | (4) |
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Novel ratio conductance electrochemical sensor based on thin film asymmetric microelectrodes |
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325 | (4) |
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| Modeling and characterization III |
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Macromodeling of fluidic damping effects in microdevices |
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329 | (4) |
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Automatic order reduction of thermo-electric models for MEMS: Arnoldi versus Guyan |
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333 | (4) |
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Hysteresis effects due to eddy currents in the integer quantum Hall regime probed by an SET-electrometer |
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337 | (4) |
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Current-voltage characteristics of Schottky diodes: Topology and relationships between relevant parameters |
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341 | (4) |
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EKV compact model extension for HV lateral DMOS transistors |
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345 | (4) |
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Failure mechanism of power DMOS transistors under UIS stress conditions |
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349 | (14) |
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| Sensors |
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New trends in thin film silicon solar cell technology |
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353 | (10) |
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Manufacturing of pixel detectors at Tesla SEZAM |
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363 | (6) |
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Volume shrinking in micro-fluidic self-assembly |
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369 | (4) |
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Superior-order curvature-corrections CMOS smart temperature sensor |
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373 | (4) |
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| Author index |
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377 | |
