These papers from the conference focus on the development and application of sensors and device results. Topics include: scaled si technology/characterization; si C and diamond devices; and thin film transistors.
Session I: PLENARY 4(10) I-1 VCSELs for the Tera Era, 4(2) W. Ishak I-2 CMOS Scaling -- A System Perspective, 6(2) J. Burr I-3 Photolithographically Synthesized High Density Oligonucleotide Array, 8(6) R. Rava Session II.A.: SCALED Si TECHNOLOGY/CHARACTERIZATION 14(18) II.A.-1 TRANSISTOR OPERATION IN 30nm-GATE-LENGTH EJ-MOSFETs, 14(2) Hisao Kawaura Toshitsugu Sakamoto Toshio Baba Yukinori Ochiai Junichi Fujita Shinji Matsui Junichi Sone II.A.-2 A 0.1 mm IHLATI (INDIUM HALO BY LARGE ANGLE TILT IMPLANT) NMOSFET FOR 1.0V LOW POWER APPLICATION, 16(2) Young Jin Choi Byung-Gook Park Jong Duk Lee II.A.-3 COMPARATIVE STUDY OF SEVERAL ANTI-PUNCHTHROUGH DESIGNS FOR BURIED CHANNEL PMOSFET, 18(2) Jeonghwan Son Seungho Lee Kijae Huh Wouns Yang Youngjong Lee Jeongmo Hwang II.A.-4 EXPERIMENTAL AND ANALYTICAL STUDIES ON CMOS SCALING IN DEEP SUBMICRON REGIME INCLUDING QUANTUM AND POLYSILICON GATE DEPLETION EFFECTS, 20(2) Kai Chen Chenming Hu Peng Fang Ashawant Gupta Ming Ren Lin Don Wollesen II.A.-5 CHARACTERIZATION OF INVERSION LAYER CARRIER PROFILE IN DEEP-SUBMICRON PMOSFETs, 22(2) Bin Yu Chenming Hu Kiyotaga Imai II.A.-6 TEMPORAL CHARACTERIZATION OF CMOS CIRCUITS BY TIME RESOLVED EMISSION MICROSCOPY, 24(2) J.C. Tsang J.A. Kash II.A.-7 A NOVEL TRANSIENT CURRENT TECHNIQUE TO CHARACTERIZE PROCESS-INDUCED THIN OXIDE DAMAGE, 26(6) A. Balasinski P.M. Singhal J. Morgan R. Hodges C. Spinner Session II.B.: SiC AND DIAMOND DEVICES 32(18) II.B.-1 900 V DMOS AND 1100 V UMOS 4H-SiC POWER FETs, 32(2) J.B. Casady A.K. Agarwal L.B. Rowland W.F. Valek C.D. Brandt II.B.-2 4H-SiC BURIED GATE FIELD CONTROLLED THYRISTOR, 34(2) R. Singh K.G. Irvine J.W. Palmour II.B.-3 DEMONSTRATION OF A 700 VOLT ASYMMETRICAL, 4H-SiC GATE-TURN-OFF THYRISTOR (GTO), 36(2) S. Seshadri A.K. Agarwal L.B. Rowland J.B. Casady C.D. Brandt II.B.-4 6H-SiC CMOS DIGITAL ICs OPERATING ON A 5V POWER SUPPLY, 38(2) S. Ryu K.T. Kornegay J.A. Cooper, Jr. M.R. Melloch II.B.-5 1000(degree)C OPERATION OF DIAMOND SCHOTTKY DIODE, 40(2) A. Vescan I. Daumiller P. Gluche W. Ebert E. Kohn II.B.-6 FIRST DIAMOND POWER FET STRUCTURE, 42(2) P. Gluche A. Aleksov A. Vescan W. Ebert M. Birk E. Kohn II.B.-7 A NOVEL WIDE-BANDGAP SEMICONDUCTOR BASED MICROELECTRONIC GAS SENSOR, 44(6) Y. Gurbuz W.P. Kang J.L. Davidson D.V. Kerns B. Henderson Session III.A.: THIN FILM TRANSISTORS 50(16) III.A.-1 FULLY SELF-ALIGNED TRI-LAYER a-Si:H TFT WITH ULTRA-THIN ACTIVE LAYER, 50(2) D.B. Thomasson T.N. Jackson III.A.-2 GATED FOUR-PROBE a-Si:H THIN FILM TRANSISTOR STRUCTURE, 52(2) Chun-ying Chen Chun-sung Chiang Jerzy Kanicki III.A.-3 LATERALLY CRYSTALLIZED POLYSILICON TFTs USING PATTERNED LIGHT ABSORPTION MASKS, 54(2) Vivek Subramanian Krishna C. Saraswat III.A.-4 PASSIVATION EFFECTS OF ION PLATING CAPPING OXIDE ON POLY-Si TFTs, 56(2) Ching-Fa Yeh Tai-Ju Chen Jiann-Shiun Kao III.A.-5 POLYSILICON THIN FILM TRANSISTORS FABRICATED AT 100(degree)C ON A FLEXIBLE PLASTIC SUBSTRATE, 58(2) P.G. Carey P.M. Smith M.O. Thompson T.W. Sigmon III.A.-6 HIGH-MOBILITY PENTACENE-BASED ORGANIC THIN FILM TRANSISTORS, 60(6) Y.Y. Lin D.J. Gundlach T.N. Jackson S.F. Nelson Session III.B.: III-V FETs/HBTs 66(18) III.B.-1 OXIDE DEFINED AlAsSb/InGaAs/InP HETEROJUNCTION BIPOLAR TRANSISTORS WITH A BURIED METAL EXTRINSIC BASE, 66(2) K.L. Lear O. Blum J.F. Klem III.B.-2 A greater than 400 GHz Fmax TRANSFERRED-SUBSTRATE HBT INTEGRATED CIRCUIT TECHNOLOGY, 68(2) R. Pullela Q. Lee B. Agarwal D. Mensa J. Guthrie L. Samoska M. Rodwell III.B.-3 HIGH EFFICIENCY IN(0.5) (Al(0.3)Ga(0.7))(0.5)P/In(0.2)Ga(0.8)As POWER HEMT FOR LOW SUPPLY VOLTAGE WIRELESS COMMUNICATIONS, 70(2) Y.C. Wang J.M. Kuo J.R. Lothian F. Ren H.S. Tsai J.S. Weiner J. Lin A. Tate Y.K. Chen W.E. Mayo III.B.-4 TEMPERATURE COMPENSATION TECHNIQUE OF GaAs FET BY ROTATING THE GATE ORIENTATION, 72(2) Hidetoshi Furukawa Tsuyosi Tanaka Takeshi Fukui Kazuki Tateoka Syunsuke Nagata Daisuke Ueda III.B.-5 InP BASED HFET STRUCTURE GROWN AND PROCESSED AT VERY LOW TEMPERATURES BELOW 300(degree)C, 74(2) B. Henle E. Kohn III.B.-6 FABRICATION AND SIMULATION OF Ga(0.51)In(0.49)P/In(X)Ga(1-X)As DOPED-CHANNEL FETs AND MMIC AMPLIFIERS GROWN BY GSMBE, 76(2) Shey-Shi Lu Yo-Sheng Lin III.B.-7 DEMONSTRATION OF Ga(2)O(3)(Gd(2)O(3))/InGaAs ENHANCEMENT-MODE n-CHANNEL MOSFETs, 78(6) F. Ren M. Hong J.M. Kuo W.S. Hobson H.S. Tsai J.R. Lothian J.P. Mannaerts J. Kwo S.N.G. Chu J. Lin Y.K. Chen A.Y. Cho Session IV.A.: NOVEL NANODEVICES AND NANOTECHNOLOGY 84(18) IV.A.-1 ENERGY SPECTRUM OF THE QUANTUM-DOT IN A Si SINGLE-ELECTRON-DEVICE, 84(2) Hiroki Ishikuro Toshiro Hiramoto IV.A.-2 A NOVEL THREE-TERMINAL NEGATIVE DIFFERENTIAL CONDUCTANCE DEVICE IN SILICON: THE HOT-ELECTRON PHONON-EMISSION FIELD-EFFECT TRANSISTOR, 86(2) S.J. Koester K. Ismail K.Y. Lee J.O. Chu IV.A.-3 A NOVEL Si BISTABLE DIODE, 88(2) Xuegen Zhu Xinyu Zheng Mike Pak Martin O. Tanner Kang L. Wang IV.A.-4 SUB-10 nm IMPRINT LITHOGRAPHY AND APPLICATIONS, 90(2) Peter R. Krauss Stephen Y. Chou IV.A.-5 QUANTITATIVE SIMULATION OF STRAINED AND UNSTRAINED InP-BASED RESONANT TUNNELING DIODES, 92(2) Gerhard Klimeck R. Chris Bowen Roger Lake Dan Blanks Ted Moise Yung-Chung Kao Timothy B. Boykin William R. Frensley IV.A.-6 HIGH-SPEED OPERATION OF A RESONANT TUNNELING FLIP-FLOP CIRCUIT EMPLOYING A MOBILE (MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENT), 94(2) Koichi Maezawa Hideaki Matsuzaki Kunihiro Arai Taiichi Otsuji Masafumi Yamamoto IV.A.-7 DEMONSTRATION OF A VELOCITY MODULATED TRANSISTOR, 96(6) E.B. Cohen K.J. Webb D.B. Janes M.R. Melloch Session IV.B.: OPTOELECTRONICS I 102(20) IV.B.-1 MODULATION PROPERTIES OF HIGH-SPEED VERTICAL CAVITY SURFACE EMITTING LASERS, 102(2) M. Ochiai K.L. Lear V.M. Hietala H.Q. Hou H. Temkin IV.B.-2 PLANAR LATERALLY OXIDIZED VCSELs FOR HIGH DENSITY LASER ARRAYS, 104(2) Robert L. Thornton Christopher L. Chua David W. Treat IV.B.-3 POLARIZATION SWITCHING IN VERTICAL-CAVITY SURFACE EMITTING LASERS OBSERVED AT CONSTANT ACTIVE REGION TEMPERATURE, 106(2) J.L.A. Chilla J. Martin-Regalado J.J. Rocca P. Brusenbach IV.B.-4 25nm WAVELENGTH RANGE TUNABLE VERTICAL CAVITY LASERS, 108(2) F. Sugihwo M.C. Larson C.-C. Lin W. Martin J.S. Harris, Jr. IV.B.-5 A WIDE AND CONTINUOUSLY TUNABLE (30nm) DETECTOR WITH UNIFORM CHARACTERISTICS OVER TUNING RANGE, 110(2) G.S. Li W. Yuen C.J. Chang-Hasnain IV.B.-6 GaN AND AlGaN(p)/GaN p-i-n ULTRAVIOLET PHOTODETECTORS, 112(2) G. Xu A. Salvador A. Bothckarev W. Kim Z. Fan H. Tang H. Morkoc G. Smith M. Estes B. Goldenberg W. Yang S. Krishnankutty IV.B.7 AN ADVANCED SiC NUCLEAR RADIATION DETECTOR, 114(8) S. Seshadri A.R. Dulloo F.H. Ruddy Session V.A.: LOW POWER Si TECHNOLOGY/SiGe 122(14) V.A.-1 1/f NOISE IN GRADED-CHANNEL MOSFETs FOR LOW-POWER LOW-COST RFICs, 122(2) Jeffrey A. Babcock Chai E. Gill Jenny M. Ford David Ngo Edward Spears Jun Ma Han-Bin Liang Daniel J. Spooner Sunny Cheng V.A.-2 REDUCED 1/f NOISE AND g(m) DEGRADATION FOR SUB-0.25mm MOSFETs WITH 25A-50A GATE OXIDES GROWN ON NITROGEN IMPLANTED Si SUBSTRATES, 124(2) C.T. Liu D. Misra K.P. Cheung G.B. Alers C.P. Chang J.I. Colonell W.Y.C. Lai C.S. Pai R. Liu J.T. Clemens V.A.-3 A NEW SINGLE-POLY FLASH MEMORY CELL WITH LOW-VOLTAGE AND LOW-POWER OPERATION FOR EMBEDDED APPLICATIONS, 126(2) Min-haw Chi Albert Bergemont V.A.-4 ENHANCEMENT OF DRAIN CURRENT IN VERTICAL SiGe/Si PMOS TRANSISTORS USING NOVEL CMOS TECHNOLOGY, 128(2) K.C. Liu S.K. Ray S.K. Oswal N.B. Chakraborti R.D. Chang D.L. Kencke S.K. Banerjee V.A.-5 EFFECT OF Ge PROFILE ON THE FREQUENCY RESPONSE OF A SiGe pFET ON SAPPHIRE TECHNOLOGY, 130(6) Suraj J. Mathew William E. Ansley Wadad B. Dubbelday John D. Cressler John Ott Jack O. Chu Bernard S. Meyerson Karen L. Kavanagh Patricia M. Mooney Isaac Lagnado Session V.B.: SiC AND GaN RF POWER DEVICES 136(12) V.B.-1 HIGH GAIN 4H-SiC STATIC INDUCTION TRANSISTORS USING NOVEL SUB-MICRON AIRBRIDGING, 136(2) R.R. Siergiej A.W. Morse P.M. Esker T.J. Smith R.J. Bojko L.B. Rowland R.C. Clarke V.B.-2 HIGH POWER OPERATION OF 4H-SiC MESFETs AT 10 GHz, 138(2) S. Sriram T.J. Smith L.B. Rowland A.A. Burk, Jr. G. Augustine V. Balakrishna H.M. Hobgood C.D. Brandt V.B.-3 HIGH CURRENT AND TRANSCONDUCTANCE AlGaN/GaN MODFETs AT ELEVATED TEMPERATURES, 140(2) O. Aktas Z.F. Fan C. Lu A. Botchkarev S. Mohammad H. Morkoc M. Roth V.B.-4 HIGH SPEED AND HIGH POWER AlGaN/GaN MODFETs, 142(6) Y.-F. Wu B.P. Keller S. Keller S.P. DenBaars U.K. Mishra N.X. Nguyen M. Le C. Nguyen T.J. Jenkins L.T. Kehias Session VI.A.: EMISSIVE DISPLAYS AND NOVEL DEVICES 148(16) VI.A.-1 DIAMOND SURFACE-EMISSION CATHODES, 148(2) M.W. Geis N.N. Efremow K.E. Krohn J.C. Twichell T.M. Lyszczarz VI.A.-2 GATED DIAMOND FIELD EMITTER ARRAY WITH ULTRA LOW OPERATING VOLTAGE AND HIGH EMISSION CURRENT, 150(2) A. Wisitsora-at W.P. Kang J.L. Davidson M. Howell Q. Li J.F. Xu D.V. Kerns VI.A.-3 EMISSION CHARACTERISTICS OF JFET-BASED FIELD EMITTER ARRAYS, 152(2) K. Yokoo M. Arai M. Kawakami H. Kayama N. Kitano H. Mimura VI.A.-4 NOVEL BLUE FLUORESCENT MATERIALS FOR ORGANIC ELECTROLUMINESCENT (EL) DEVICES, 154(2) Jianmin Shi Ching W. Tang Chin H. Chen VI.A.-5 FABRICATION OF A GaAs MESFET USING RESISTLESS PROCESSING AND SELECTIVE AREA EPITAXY, 156(2) Kumar Shiralagi Raymond Tsui Herbert Goronkin VI.A.-6 FERROMAGNET -- SEMICONDUCTOR HYBRID HALL EFFECT DEVICE, 158(6) Mark Johnson B.R. Bennett Session VI.B.: OPTOELECTRONICS II AND PHOTODETECTORS 164 VI.B.-1 HIGH-SPEED InP/InGaAs UNI-TRAVELING-CARRIER PHOTODIODES WITH 3-dB BANDWIDTH OVER 150 GHz, 164(2) Naofumi Shimizu Noriyuki Watanabe Tomofumi Furuta Tadao Ishibashi VI.B.-2 HIGH-SPEED RESONANT-CAVITY SAM AVALANCHE PHOTODIODES, 166(2) H. Nie K.A. Anselm C. Hu C. Lenox B.G. Streetman J.C. Campbell VI.B.-3 A WAVELENGTH AND POLARIZATION DETECTOR USING MONOLITHICALLY INTEGRATED SUBWAVELENGTH MSM PHOTODETECTORS, 168(2) Steven J. Schablitsky Erli Chen Stephen Y. Chou VI.B.-4 AVALANCHE PHOTODIODE (APD) NOISE DEPENDENCE ON AVALANCHE REGION WIDTH, 170(2) K.F. Li D.S. Ong J.P.R. David P.N. Robson R.C. Tozer G.J. Rees R. Grey VI.B.-5 LOW-SWITCHING ENERGY RESONANT-TUNNELING PHOTODETECTORS, 172(2) T.S. Moise C.L. Goldsmith Y.-C. Kao C. Schow J.C. Campbell VI.B.-6 PHOTONIC INTEGRATED WAVELENGTH-SELECTIVE RECEIVERS BASED ON TAPERED GRATING-ASSISTED CODIRECTIONAL COUPLERS, 174 Yu-Heng Jan Greg A. Fish Larry A. Coldren Steven P. DenBaars
