Materials and Technologies I Homoepitaxy of GaN - growth, investigations and applications 1(8) J. Baranowski A. Wysmolek Material properties of GaN grown by radio frequency plasma-assisted molecular beam epitaxy on Si (III) substrates 9(4) M. Androulidaki K. Amimer K. Tsagaraki M. Kayambaki S. Mikroulis G. Constantinidis Z. Hatzopoulos A. Georgakilas Photoenhanced wet etching of gallium nitride for gate recessing 13(4) J. Skriniarova A. Fox P. Bochem P. Kordos Structural and electrical properties of SiO2 thin films produced by the different methods 17(4) J.J. Perez-Bucno R. Ramirez-Bon F. Espinosa-Beltram Yu. V. Vorobiev J. Gonzales-Hernandes Modelling and Characterization I Lifetime engineering in high-power devices 21(8) J. Vobecky Comprehensive analysis of SiC power devices using a fully coupled physical transport model 29(6) G. Wachutka M. Lades W. Kaindl Simulation of current transport in highly doped semiconductor structures including the tunneling effect 35(4) J. Racko V. Drobny D. Donoval Temperature dependent electrical characteristics of silicide/silicon junctions 39(4) Zs. J. Horvath D. Donoval G. Peto G. Molnar Vo Van Tuyen Influence of dopand diffusion in SiGe HBTs on the transit frequency 43(4) J. Geßner R. Kinder F. Schwierz Structures and Devices I GaN-based electronics: Material and device issues 47(8) P. Kordos Performance of aggressively scaled pseudomorphic HEMTs: A Monte Carlo simulation study 55(4) K. Kalna A. Ascnov K. Elgaid I. Thayne Hot-carrier effects in 0.15 μm low dose SIMOX N-MOSFETs 59(4) P. Dimitrakis J. Jomaah F. Balestra G.J. Papaioannou Interference of ballistic electrons in semiconductor nanostructure devices 63(4) T. Figielski T. Wosinski A. Morawski A. Makosa Z. Tkaczyk J. Wrobel E. Kaminska E. Papis A. Piotrowska R. Nowakowski Vertical silicon MOSFET based on selective epitaxial growth 67(4) J. Moers A. Tonnesmann D. Klaes L. Vescan A. van der Hart A. Fox M. Marso P. Kordos H. Luth Microsystem I Scanning probe microsystem 71(10) I. W. Rangelow Tunable microcavity filters and detectors 81(10) P. Viktorovich Control positioning of torsional electrostatic actuators by current driving 91(4) R. Nadal Guardia R. Aigner W. Nessler M. Handtmann L. M. Castaner Formation of laterally displaced porous silicon filters using different fabrication methods 95(4) M. Marso M. Wolter R. Arens-Fischer P. Kordos H. Luth Structures and Devices II Semi-insulating InP detectors for solar neutrino experiment 99(6) P. G. Pelfer F. Dubecky R. Fornari M. Pikna E. Gombia B. Zatko J. Darmo M. Krempasky M. Sckacova Mid-infrared semiconductor lasers 105(4) T. Simecek E. Hulicius J. Oswald J. Pangrac P. Capek K. Heime A. Behres A. Joullie P. Christol Powerful V - channel phototransistor 109(6) A. N. Shmyryeva T. V. Semikina Investigation of InGaAs/GaAs photodetectors with AlAs/GaAs nanolayers 115(4) I. Zborowska-Lindert D. Radziewicz B. Boratynski B. Sciana S. Patela M. Tlaczala Structures and Devices III Design and technology of InGaP/GaAs DHBTs 119(8) A. Rezazadeh M. Sotoodeh Ridge waveguide InAs/GaAs lasers 127(4) L. Kuna F. Uherek J. Kovac J. Jakabovic V. Gottschalch B. Rheinlander On the origin of interface induced charge density in ionized cluster beam deposited metal-semiconductor systems 131(4) D. Korosak B. Cvikl The screening properties of 2DEG gas in the integral quantum Hall regime 135(4) J. J. Mares J. Kristofik P. Hubik Resonant cavity LED with InAs/GaAs active region 139(4) J. Kvietkova J. Kovac B. Rheinlander S. Hardt V. Gottschalch M. Blaho J. Jakabovic J. Skriniarova Materials and Technologies II Thermal annealing of AuPt Schottky contacts on GaAs and AlGaAs 143(4) P. Machac Berryllium doped low-temperature-grown MBE GaAs: Material for photomixing in the THz frequency range 147(4) J. Darmo F. Schaffer A. Forster P. Kordos Cathode sputtered permalloy films of high AMR effect and low coercivity 151(6) G. Stangl P. Aigner P. Hudek I. Kostic R. Chabicovsky H. Hauser J. Hochreiter R. Riedling Defective state analysis in silicon carbide 157(4) A. Castaldini A. Cavallini L. Polenta F. Nava C. Canali C. Lanzieri Modelling and Characterization II Proton irradiation effects on the electric field behavior particle detectors 161(10) A. Castaldini A. Cavallini L. Polenta C. Canali F. Nava Optical Properties of GaAs1-yNy (y ≤ 0.037) 171(4) G. Leibiger B. Rheinlander V. Gottschalch M. Schubert J. Sik G. Lippold An extended model for soft breakdown in ultra-thin SiO2 films 175(4) S. Okhonin P. Fazan E. Baskin G. Guegan S. Deleonibus F. Martine Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Sii-xGex structures grown by gas source molecular beam epitaxy 179(4) L. K. Orlov N. L. Ivina A. V. Potapov S. V. Ivin Optical determination of δ-doping concentration in semiconductor structures 183(4) A. Babinski R. Kulawinski T. Tomaszewicz J. M. Baranowski The influence of defect diffusion under electrical field on optical and luminescent characteristics of cadmium sulfide 187(4) L. V. Borkovskaya B. R. Dzhumaev L. Yu. Khomenkova N. E. Korsunskaya I. V. Markevich Materials and Technologies III Ionized-PVD by pulsed sputtering of Ta for metalization of high aspect-ratio-structures in VLSI 191(6) U. Helmersson Z. S. Khan J. Alami Schottky barrier as a diagnostic tool for evaluating properties of InP epitaxial layers prepared from melts containing rare-earth elements 197(4) O. Prochazkova F. Srobar F. Jelinek J. Saroch K. Zdansky High quality SiGe epitaxial layer grown by RPCVD using dichlorosilane 201(4) C. Menon H. H. Radamson G. Landgren The characterization of laser-deposited thin sensitive layers of gas sensors 205(4) M. Vrnata V. Myslik F. Vyslouzil M. Jelinck J. Lancok Materials and Technologies IV Growth of polyerytalline diamond films for low field electron emission 209(6) V. Malcher A. Kromka J. Janik V. Dubravcova Possibilities of quantitative Makyoh-topography 215(4) F. Riesz I. E. Lukacs Thermodynamic complexity measure for semiconductor heterostructures 219(4) F. Srobar Electrical properties of 2DEG in the GaAs/InGaP based structures 223(4) R. Kudela M. Morvic M. Kucera S. Kiein J. Novak Microsystems II Mechanical integrity failure of bulk-micromachined Si wafers: Influence of structural geometry and wafer handling 227(4) M. Bartek Process optimization and diffusion length evaluation of a new aqueous base developable negative epoxy electron beam resist 231(4) N. Glezos P. Argitis D. Velessiotis I. Raptis P. Hudek I. Kostic Ge-film resistance and Si-based diode temperature microsensors 235(4) N. S. Boltovets V. V. Kholevchuk R. V. Konakova V. F. Mitin E. F. Venger Posters Materials, Technologies, Modelling, and Characterization Modeling and characterization of microwave p-i-n photodiode 239(4) A. Chizh S. A. Malyshev Influence of carrier screening and impurity correlation on the electron and optical properties of doping superlattices 243(4) D. V. Ushakov V. K. Kononenko I. S. Manak Heterojunction bipolar transistor with diffusive and ballistic electron transport in the base 247(4) M. Horak Homogeneity of InGaAs/InP nanostructures 251(4) D. Piester A. A. Ivanov S. A. Bakin T. Klaffs M. Ursu H. H. Wehman A. Schlachetzki S. Kipp Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts 255(2) M. Cakar M. Sadlam Y. Onganer Zs. J. Horvath A. Turut Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes 257(4) Zs. J. Horvath O. V. Rengevich S. V. Mamykin N. L. Dmitruk Vo Van Tuyen B. Szentpali R. V. Konakova A. Belyaev Morphology and electrical behaviour of Pd2Si/p-Si junctions 261(4) Zs. J. Horvath J. Kumar L. Dobos B. Pecz A. L. Toth S. Chand J. Karanyi Correlation between diffusion length and Hall mobility in different GaAs epitaxial layers 265(4) A. Nemesics K. Somogyi Investigation of metal-induced low-temperature erystallization of SiO2 sol-gel glass containing Ag 269(4) M. G. Garnica-Romo J. Gonzales-Hernandez M. A. Hernandez-Landaverde Yu. V. Vorobiev Investigation of the two-dimensional quantum wells made by the dye incorporation into the SiO2 sol-gel glass 273(4) J. J. Perez-Bueno L. L. Diaz-Flores J. F. Perez-Robles F. Espinoza-Beltram J. Gonzalez-Hernandez R. Ramirez-Bon Yu. V. Vorobiev AlGaN/GaN heterostructures for UV Photodetector applications 277(4) B. Boratynski R. Paszkievicz B. Paszkievicz B. Jankowski M. Tlaczala MOVPE growth and characterisation of silicon δ-doped GaAs, AlAs and Al2Ga1-xAs for advanced semiconductor devices 281(4) B. Sciana D. Radziewicz M. Tlaczala G. Sek M. Nowaczyk J. Misicwiez GaN deposition on AIN/Si substrates for FEAs 285(4) St. Lasizs R. Korbutowicz P. Paszkievicz W. Czarczynski Z. Znamirowski Investigation of the electrical properties of undoped gallium arsenide epitaxial layers 289(6) Z. Synowiec D. Radzievicz I. Zborowska-Lindert Temperature dependence simulation of electrophysical properties of silicon carbide 295(4) O.A. Agueev A. M. Svetlichny D. A. Izotovs A. V. Melnikov A. B. Voronko Study of diamond films prepared by hot filament chemical vapor deposition 299(4) A. Kromka V. Malcher J. Janik V. Dubravcova A. Satka I. Cerven A Raman study of NiOx films for gas sensors applications 303(4) R. Srnanck I. Hotovy V. Malcher A. Vincze D. McPhail S. Littlewood Optical properties of GaAs based layers characterised by Raman spectroscopy and photoluminescence 307(4) R. Srnanck A. Vincze D. McPhail S. Littlewood A. Kromka L. Janos RBS study of amorphous silicon carbide films annealed by pulse electron beam 311(4) J. Huran I. Hotovy A.P. Kobzev N.I. Balalykin J. Stano L. Spiess Determination of implanted layer depth in silicon by electrochemical C-V technique 315(4) L. Hulenyi R. Kinder A. Satka Thin film interdigitated electrode arrays applicable for non-invasive monitoring of human skin 319(4) R. Ivanic M. Weis T. Danilla V. Tvarozek Lattice stress gradients in thin films deposited by reactive sputtering 323(4) P. Sutta On the measurement of high resistance semiconductors by the van der Pauw method 327(4) M. Morvic Physical and structural characterization of NiO thin films for gas detection 331(4) I. Hotovy J. Huran L. Spiess P. Siciliano R. Rella V. Rehacek The influence of the electrolyte-semiconductor interface on the doping profile measurement of GaAs structure 335(4) R. Kinder B. Paszkiewicz B. Sciana L. Hulenyi Peculiarities of Raman spectra from porous silicon 339(4) N.E. Korsunskaya M.K. Sheinkman M.Ya. Valakh T. V. Torchinskaya L. Yu. Khomenkova V. A. Yukhimchuk B.M. Bulakh M.K. Dzhumacv A. Many Y. Goldstein E. Savir Effect of the plasmon-phonon coupling anisotropy on the reflection coefficient of polar semiconductors ZnO and SiC 6-H 343(4) E.F. Venger S.M. Davidenko A.V. Melnichuk L.Yu. Melnichuk Yu.A. Pasechnik Nature of the red photoluminescence in porous silicon 347(4) T.V. Torchynska G. Bacarril-Espinosa A. Ita-Torre J. Palacios Gomez N.E. Korsunska L.Yu. Khomenkova B.M. Bulakh L.V. Scherbina Advanced silicon diode temperature sensors with minimized self heating and noise for cryogenic applications 351(4) Yu.M. Shwarts V.N. Sokolov M.M. Shwarts I.A. Fedorov E.F. Venger Atomic force microscopy analysis of Ga-face and N-face GaN grown on (0001) Al2O3 by plasmaassisted molecular beam epitaxy 355(4) A. Kostopulos S. Mikroulis E. Dimakis K. Tsagaraki G. Constantinidis A. Georgakilas Structures, Devices and Microsystems Investigation of interface formation and charge properties of MIS structures Mc-DyxOy-n-InP (100) 359(4) N. Babushkina S.A. Malyshev L.N. Bykova L.I. Romanova CdS-CdSe thin film photoconductive cell based optoelectronic converters for higher precision measuring instrumentation 363(4) Y. Trofimov S. Lishik L. Survilo A. Posedko V. Sivenkov Anodic alumina based electrostatic micro-relay MEMS device 367(4) G.I. Efremov N.I. Mukhurov V.I. Kovalevsky Thermal stability of Pt/doping element/Pd ohmic contacts to GaAs 371(4) P. Machac V. Myslik Quantum size InAs/GaAs Lasers - Preparation and Properties 375(4) E. Hulicius P. Hazdra J. Voves J. Oswald J. Pangrac K. Melichar M. Vancura O. Petricek T. Simecek The ohmic contacts on the layers for gas sensors 379(4) E. Ratajova P. Machac V. Myslik Intersubband absorption in δ-doped InGaAs-InP multi quantum wells 383(4) T. Klaffs A. A. Ivanov A.S. Bakin D. Piester M. Ursu A. Schlachetzki L. Hvozdara G. Strasser B. Guttler Influence of substrate preparation on fracture properties of InP cantilevers 387(4) I. Behrens E. Peiner A. S. Bakin A. Schlachetzki Delta - doped layer influence on Schottky diodes parameters 391(4) J. Osvald Poly Si/Ni (Pt) thin film resistance temperature sensors on GaAs 395(4) T. Lalinsky P. Hrkut Z. Mozolova T. Kovacik Photoelectric properties of Schottky barriers based on the porous silicon 399(4) V. Blynski S.K. Lazarouk S.A. Malyshev T.P. Matskevich Coordinate sensitive photodetectors based on InGaAs/InP heterostructures 403(4) E. Budeanu I Grozescu M. Purica E. Rusu S.V. Slobodchikov Performance of GaAs photoconductive detectors fabricated from different starting materials 407(4) L. Ryc B. Surma F. Dubecky L. Dobrzanski A. Hruban S. Strzelecka J. Dresner Higly reliable CW strained layer InGaAs/GaAs (λ=980 nm) SCH SQW lasers fabricated by MBE 411(4) P. Sajewicz T. Piwonski K. Reginski B. Mroziewicz M. Bugajski Long wavelength (1.02-1.03 μm) InGaAs/GaAs lasers fabricated by MBE 415(6) T. Piwonski P. Sajewicz J.M. Kubica K. Reginski B. Mroziewicz M. Bugajski Vertically arranged microelectrode array for electrochemical sensing 421(4) V. Rehacek I. Novotny R. Ivanic V. Breternitz L. Spicss Ch. Knedlik V. Tvarozek Optical response time of InGaAs(P)/InP photodiodes 425(4) F. Uherek D. Hasko J. Chovan Electrical and detection performance of radiation detector based on bulk semi-insulating InP: Role of detector volume 429(4) B. Zatko F. Dubecky J. Darmo P. Euthymiou V. Necas M. Krempasky M. Sekacova D. Korytar O. Csabay L. Harmatha P.G. Pelfer Instability of homogeneous composition of highly strained QWs in heterostructures GaAs/InxGa1-xAs/GaAs 433(4) A.I. Klimovskaya N.N. Grigorev E.G. Gule Ju. A. Dryha V.G. Litovchenko Transversal photovoltage in heterostructure and Schottky contact 437(4) L.V. Shekhovtsov Effect of rapid thermal annealing on the properties of ZrBx (TiBx)-Si contacts 441(4) N.S. Boltovets V.N. Ivanov R.V. Konakova V.V. Milenin D.I. Voitsikhovskyi On a controlof photon-surface plasmon coupling at a multilayer diffraction grating 445(4) N.L. Dmitruk O.I. Mayeva S.V. Mamykin O.B. Yastrubchak The new mechanism for obtaining of the steep nonlinearities in the modern semiconductor structure 449(4) A.M. Korol O.V. Tretyak D.I. Sheka The effect of heterojunction properties of the diode temperature sensors on low temperature current transfer and temperature response curves 453(4) Yu. M. Shwarts A.V. Kondrachuk M.M. Shwarts L.I. Spinar E.F. Venger Effect of thermal annealing and high-power microwave radiation on characteristics of combined resonant tunneling structures 457(4) A.E. Belyaev N.S. Boltovets R.V. Konakova E.A. Soloviev D.I. Sheka B. Podor E. Badalyan S.A. Vitusevich High-resistivity silicon p-i-n diodes for detection of ionising radiation 461(4) W. Slysz L. Ryc M. Wegrzecki Growth and characterisation of RuO2 films prepared by reactive unbalanced magnetron sputtering 465(4) D. Bue D. Music U. Helmersson RIE of polyimide micromechanical structures 469(6) L. Matay I. Kostie P. Hrkut R. Andok On spectrometric performance of GaAs based radiation detectors 475 F. Dubecky B. Zatko J. Darmo M. Sekacova M. Krempasky V. Necas S. Hlavac M. Rucek R. Senderak B. Szentpali
