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Computer Memories 2: Static Random-Access Memory [Kõva köide]

(Institut Universitaire de Technologie (IUT) de Paris)
  • Formaat: Hardback, 256 pages
  • Sari: ISTE Invoiced
  • Ilmumisaeg: 10-Jun-2026
  • Kirjastus: ISTE Ltd
  • ISBN-10: 1836690630
  • ISBN-13: 9781836690634
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  • Formaat: Hardback, 256 pages
  • Sari: ISTE Invoiced
  • Ilmumisaeg: 10-Jun-2026
  • Kirjastus: ISTE Ltd
  • ISBN-10: 1836690630
  • ISBN-13: 9781836690634
Memory, the second function of a computer, has gradually become more complex in order to meet growing needs in terms of capacity, speed, security and energy efficiency. It takes the form of a component or system, such as a memory subassembly or a mass storage device.

For several decades, there has been a strong trend towards integrating memory directly into the processor under the term embedded memory, of which cache memory is a typical example. Understanding its internal mechanisms and interfacing is essential for mastering the operation of a computer and programming it efficiently.

Computer Memories 2 focuses on the static storage cell and its associated component, known as static random-access memory. The first part presents the main temporal characteristics of a generic random-access memory, as well as its electrical and mechanical properties, including aspects related to encapsulation. The second part focuses on the study of the first category of random-access semiconductor memory: asynchronous static memory, commonly referred to by the acronym SRAM (static random-access memory). The book details its temporal, electrical and mechanical characteristics, providing an in-depth understanding of its operation and technical specifications.
Philippe Darche is Lecturer in Computer Science at the University Institute of Technology (IUT) of Paris Rives de Seine and Researcher in the Distributed Algorithms and Systems (DeLyS) team at LIP6, Sorbonne University, France. He is also the author of fifteen books on computer architecture.