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Detection of Optical Signals [Kõva köide]

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  • Formaat: Hardback, 580 pages, kõrgus x laius: 254x178 mm, kaal: 1338 g, 1 Tables, color; 57 Tables, black and white; 11 Line drawings, color; 404 Line drawings, black and white; 3 Halftones, color; 64 Halftones, black and white; 14 Illustrations, color; 468 Illustrations, black and white
  • Sari: Series in Optics and Optoelectronics
  • Ilmumisaeg: 10-Jun-2022
  • Kirjastus: CRC Press
  • ISBN-10: 1032059486
  • ISBN-13: 9781032059488
Teised raamatud teemal:
Detection of Optical SignalsSuurem pilt
  • Formaat: Hardback, 580 pages, kõrgus x laius: 254x178 mm, kaal: 1338 g, 1 Tables, color; 57 Tables, black and white; 11 Line drawings, color; 404 Line drawings, black and white; 3 Halftones, color; 64 Halftones, black and white; 14 Illustrations, color; 468 Illustrations, black and white
  • Sari: Series in Optics and Optoelectronics
  • Ilmumisaeg: 10-Jun-2022
  • Kirjastus: CRC Press
  • ISBN-10: 1032059486
  • ISBN-13: 9781032059488
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9781032059488.html
Märksõnad:
"Detection of Optical Signals provides a comprehensive overview of important technologies for photon detection, from the X-ray through ultraviolet, visible, infrared to far-infrared spectral regions. It uniquely combines perspectives from many disciplines, particularly within physics and electronics, which are necessary to have a complete understanding of optical receivers. This interdisciplinary textbook aims to: Guide readers into more detailed and technical treatments of readout optical signals Give abroad overview of optical signal detection including terahertz region and two-dimensional material Help readers further their studies by offering chapter-end problems and recommended reading. This will be an invaluable resource for graduate students in physics and engineering, as well as a helpful refresher for those already working with aerospace sensors and systems, remote sensing, thermal imaging, military imaging, optical telecommunications, infrared spectroscopy, and light detection"--

Detection of Optical Signals provides a comprehensive overview of important technologies for photon detection, from the X-ray through ultraviolet, visible, infrared to far-infrared spectral regions.

Preface xi
Acknowledgements xiii
Author Bios xiv
Chapter 1 Radiometry and Photometry
1(28)
1.1 Introduction
2(1)
1.2 Radiometric and Photometric Quantities and Units
3(3)
1.3 Radiometric Quantities
6(3)
1.4 Luminance
9(4)
1.5 Blackbody Radiation
13(5)
1.5.1 Planck's Law
14(1)
1.5.2 Wien's Displacement Law
15(1)
1.5.3 Stefan-Boltzmann's Law
16(1)
1.5.4 Exitance Contrast
17(1)
1.6 Emissivity
18(3)
1.7 Propagation of Optical Radiation
21(8)
1.7.1 Propagation of Optical Radiation through the Atmosphere
21(3)
1.7.2 Transmission Range of Optical Materials
24(2)
Problems
26(1)
References
27(2)
Chapter 2 Characteristics of Optical Detectors
29(26)
2.1 Introduction
29(2)
2.2 Detector Parameters
31(4)
2.2.1 Quantum Efficiency
31(1)
2.2.2 Responsivity
32(1)
2.2.3 Noise Equivalent Power
32(1)
2.2.4 Detectivity
33(1)
2.2.5 Response Speed
34(1)
2.3 Detector Performance Limited by Photon Noise
35(6)
2.4 Measurements of Detector Parameters
41(14)
2.4.1 Responsivity Measurements
42(1)
2.4.1.1 Measurement of the Spectral Responsivity of the Detector
42(2)
2.4.1.2 Measurement of the Detector Responsivity to Blackbody Radiation
44(2)
2.4.2 Noise Measurements
46(3)
2.4.3 Measurement of Frequency Characteristics
49(3)
2.4.4 Measurement of the Rise and Fall Time of the Detector Response
52(1)
Problems
52(2)
References
54(1)
Chapter 3 Noise Sources
55(20)
3.1 Introduction
56(3)
3.2 Photon Noise
59(3)
3.2.1 Signal Flux Fluctuation Noise
60(2)
3.2.2 Background Flux Fluctuation Noise
62(1)
3.3 Johnson Noise
62(3)
3.4 Shot Noise
65(1)
3.5 Generation-recombination Noise
66(2)
3.6 1/f Noise
68(1)
3.7 Temperature Noise
69(1)
3.8 Microphonic Noise
70(1)
3.9 Popcorn Noise
71(4)
Problems
71(2)
References
73(2)
Chapter 4 Fundamentals of Optical Detection
75(82)
4.1 Introduction
75(2)
4.2 Classification of Detectors
77(5)
4.3 Physical Basics of Thermal Detectors Operation
82(14)
4.3.1 Detectivity and Fundamental Limits
86(3)
4.3.2 Thermopiles
89(2)
4.3.3 Bolometers
91(2)
4.3.4 Pyroelectric Detectors
93(3)
4.4 Physical Principles of Photon Detectors
96(14)
4.4.1 Radiation Absorption
97(3)
4.4.2 Coupling of Radiation with Detectors
100(5)
4.4.3 Generation and Recombination Mechanisms
105(5)
4.5 Photoconductive Detectors
110(4)
4.6 Photovoltaic Detectors
114(11)
4.6.1 P-n Junction Photodiodes
114(4)
4.6.2 Real Photodiodes
118(1)
4.6.2.1 Generation-recombination Current
119(2)
4.6.2.2 Tunnelling Current
121(1)
4.6.2.3 Surface Leakage Current
121(2)
4.6.3 Response Time
123(2)
4.7 P-i-n Photodiodes
125(3)
4.8 Avalanche Photodiodes
128(7)
4.9 Schottky Barrier Photodiodes
135(2)
4.10 Metal-semiconductor-metal Photodiodes
137(1)
4.11 Barrier Photodetectors
138(4)
4.12 Photoemissive Detectors
142(15)
4.12.1 Internal Photoemission Process
144(3)
4.12.2 Silicide Photoemissive Detectors
147(3)
Problems
150(3)
References
153(4)
Chapter 5 Thermal Detectors
157(44)
5.1 Introduction
157(1)
5.2 Thermopiles
158(9)
5.2.1 Thermoelectric Materials
159(4)
5.2.2 Technology and Properties of Thermocouples
163(4)
5.3 Bolometers
167
5.3.1 Metal Bolometers
168(1)
5.3.2 Thermistors
169(1)
5.3.3 Semiconductor Bolometers
170(3)
5.3.4 Microbolometers
173(4)
5.3.5 Superconducting Bolometers
177(2)
5.3.6 High-temperature Superconducting Bolometers
179(1)
5.4 Pyroelectric Detectors
81(1)
5.4.1 Responsivity
182(2)
5.4.2 Noise and Detectivity
184(2)
5.4.3 Pyroelectric Material Selection
186(4)
5.4.4 Dielectric Bolometers
190(3)
5.4.5 Pyroelectric Linear Arrays and Multi-colour Detectors
193(3)
Problems
196(2)
References
198(3)
Chapter 6 Photoemissive Detectors
201(24)
6.1 Introduction
201(1)
6.2 Conventional Photocathodes
202(3)
6.3 Negative Electron Affinity Devices
205(2)
6.4 Photomultipliers
207(6)
6.5 MicroChannel Plates
213(2)
6.6 Image Intensifier Systems
215(2)
6.7 Schottky Barrier Photoemissive Detectors
217(8)
Problems
221(1)
References
222(3)
Chapter 7 Photon Detectors
225(52)
7.1 Introduction
225(3)
7.2 X-ray and y-ray Detectors
228(9)
7.3 Ultraviolet Detectors
237(5)
7.4 Visible Detectors
242(4)
7.5 Infrared Photodetectors
246(31)
7.5.1 Germanium Photodiodes
247(1)
7.5.2 InGaAs Photodiodes
248(3)
7.5.3 InSb-based Photodiodes
251(3)
7.5.4 HgCdTe Photodetectors
254(11)
7.5.5 Lead Salt Photoconductors
265(1)
7.5.6 Extrinsic Photoconductors
265(5)
Problems
270(1)
References
271(6)
Chapter 8 Quantum Well, Superlattice and Quantum Dot Photodetectors
277(42)
8.1 Low Dimensional Solids: Background
277(4)
8.2 Types of Superlattices
281(1)
8.3 Superlattice Avalanche Photodiodes
282(2)
8.4 GaAs/AlGaAs Quantum Well Infrared Photodetectors
284(3)
8.5 Type-II Superlattice Photodetectors
287(13)
8.5.1 6.1 Å III-V Semiconductor Family
289(4)
8.5.2 p-i-n Photodiodes
293(2)
8.5.3 Barrier Photodetectors
295(5)
8.6 Quantum Dot Photodetectors
300(9)
8.6.1 Self-assembled Quantum Dots
300(5)
8.6.2 Colloidal Quantum Dots
305(4)
8.7 Quantum Cascade Photodetectors
309(10)
Problems
313(2)
References
315(4)
Chapter 9 2D Material Photodetectors
319(22)
9.1 Relevant Properties of Graphene and Related 2D Materials
319(9)
9.1.1 Graphene
320(3)
9.1.2 2D Crystalline Materials
323(5)
9.2 2D Material-based Detectors
328(3)
9.3 2D Material-based Detector Performance
331(10)
9.3.1 Photon Detectors
331(5)
9.3.2 Thermal Detectors
336(2)
References
338(3)
Chapter 10 Terahertz Detectors
341(22)
10.1 Room Temperature THz Detectors
342(8)
10.1.1 Schottky Barrier Diodes
345(1)
10.1.2 Field Effect Transistor and CMOS-based Detectors
346(2)
10.1.3 Microbolometers
348(2)
10.2 Extrinsic Semiconductor Detectors
350(1)
10.3 Semiconductor Bolometers
351(2)
10.4 Pair Braking Photon Detectors
353(1)
10.5 Superconducting HEB and TES Detectors
354(3)
10.6 Far-infrared Instruments for Astronomy
357(6)
References
360(3)
Chapter 11 Direct and Advanced Detection Systems
363(74)
11.1 Selection of Active Amplification Elements
363(7)
11.2 Voltage Preamplifiers
370(2)
11.3 Transimpedance Preamplifiers
372(3)
11.4 Charge Preamplifiers
375(2)
11.5 First Stages of Photoreceivers
377(16)
11.5.1 Photoreceivers with Photon Detectors
377(11)
11.5.2 Photoreceivers with Thermal Detectors
388(5)
11.6 Noise Models of First Stages of Optical Detection Systems
393(7)
11.7 Maximisation of Signal to Noise Ratio in Photoreceivers
400(7)
11.8 Monolithic and Hybrid Photoreceivers
407(1)
11.9 Photon Counters
408(5)
11.10 Advanced Methods of Signal Detection
413(24)
11.10.1 Signal Averaging
413(1)
11.10.2 Phase Sensitive Detection
414(6)
11.10.3 Boxcar Detection Systems
420(8)
11.10.4 Coherent Detection
428(4)
Problems
432(2)
References
434(3)
Chapter 12 Focal Plane Arrays
437(96)
12.1 Introduction
437(3)
12.2 Small Arrays
440(3)
12.3 Arrays of Detectors with Signal Processing in the Focal Plane
443(6)
12.3.1 Monolithic Arrays
443(3)
12.3.2 Hybrid Arrays
446(3)
12.4 Basic Parameters of Detector Arrays
449(9)
12.4.1 Noise Equivalent Charge
450(1)
12.4.2 Noise Equivalent Difference Temperature
451(1)
12.4.3 Modulation Transfer Function
452(2)
12.4.4 Minimum Resolvable Temperature Difference
454(2)
12.4.5 Other Parameters
456(1)
12.4.5.1 Fill Factor (FF)
456(1)
12.4.5.2 Dynamic Range (DR)
457(1)
12.4.5.3 Crosstalk
458(1)
12.5 CCD Image Sensors
458(16)
12.5.1 CCD Array Operation
460(2)
12.5.2 Types of CCD Devices
462(4)
12.5.3 Signal Readout Techniques Used in CCDs
466(1)
12.5.3.1 Floating Diffusion Circuit
467(1)
12.5.3.2 Correlated Double Sampling Circuit
468(1)
12.5.3.3 Floating Gate Circuit
468(1)
12.5.4 Read-out Circuits Architecture
468(2)
12.5.4.1 Full-frame CCD
470(1)
12.5.4.2 Frame-transfer CCD
470(2)
12.5.4.3 Interline Transfer CCD
472(1)
12.5.4.4 Frame-interline Transfer CCD
472(1)
12.5.4.5 Image Sensor Formats
473(1)
12.6 CMOS Devices
474(17)
12.6.1 Types of Pixels
476(3)
12.6.2 Architecture of CMOS Imaging Sensors
479(1)
12.6.3 Signal Readout Circuits in CMOS Sensors
480(1)
12.6.3.1 SI Circuits
481(1)
12.6.3.2 SFD Circuits
482(1)
12.6.3.3 Capacitor Feedback Transimpedance Amplifier
483(1)
12.6.3.4 Injection Circuits
484(1)
12.6.3.5 MOSFET Gate Modulation Circuits
485(2)
12.6.4 Readout Circuit Architecture for CMOS Sensors
487(1)
12.6.5 CMOS versus CCD
488(3)
12.7 Representative Focal Plane Arrays
491(42)
12.7.1 Butting versus Stitching Techniques
491(2)
12.7.2 Detector Operating Temperature
493(3)
12.7.3 Ultraviolet and Visible Arrays
496(4)
12.7.4 Microbolometer Arrays
500(5)
12.7.5 Infrared Photon Detector Arrays
505(1)
12.7.5.1 InGaAs Arrays
506(3)
12.7.5.2 InSb Arrays
509(4)
12.7.5.3 HgCdTe Arrays
513(4)
12.7.5.4 Lead Salt Arrays
517(1)
12.7.5.5 QWIP Arrays
518(3)
12.7.5.6 Barrier and Type-II Superlattice Arrays
521(4)
Problems
525(1)
References
526(7)
Index 533
Antoni Rogalski is a professor at the Institute of Applied Physics, Military University of Technology in Warsaw. He is one of the worlds leading researchers in the field of infrared (IR) optoelectronics. He has made pioneering contributions in the areas of theory, design, and technology of different types of IR detectors. In 1997, Professor Rogalski received an award from the Foundation for Polish Science, the most prestigious scientific award in Poland, for his achievements in the study of ternary alloy systems for infrared detectors. His monumental monograph, Infrared and Terahertz Detectors (published in three editions by Taylor and Francis), has been translated into Russian and Chinese.

In 2013, Professor Rogalski was elected as an Ordinary Member of the Polish Academy of Sciences and as a member of the Central Commission for Academic Degrees and Titles. Since early 2015, he has been the Dean of the Faculty of Technical Sciences of the Polish Academy of Sciences, and, from 2016, he has been a member of the group for affairs of scientific awards of the Prime Minister of Poland.

Professor Rogalski is a fellow of the International Society for Optical Engineering (SPIE), vicepresident of the Polish Optoelectronic Committee, editor-in-chief of the journal Opto-Electronics Review (19972015), deputy editor-in-chief of the Bulletin of the Polish Academy of Sciences: Technical Sciences (2003present), and a member of the editorial boards of several international journals. He is an active member of the international technical community as chair and co-chair, organizer, and member of scientific committees of many national and international conferences on optoelectronic devices and materials sciences.

Zbigniew Bielecki, PhD, D.Sc., Eng. is a graduate of the Faculty of Electronics of the Military University of Technology in Warsaw. Since 1983 he has been working at the Institute of Optoelectronics of the Military University of Technology. He received a PhD degree in 1992, obtained his post-doctoral degree in 2002 and received the title of professor in 2008. Professor Bielecki has held many managerial positions at his alma mater. Currently, he is a full professor at the Military University of Technology. His scientific achievements include over 450 publications in the field of optical detection signals (including 4 monographs, 2 academic scripts, 11 chapters in foreign monographs, 7 chapters in domestic monographs, and over 70 publications in indexed journals). Since he received the title of professor, the subjects of his scientific activity have been highly sensitive sensors of hazardous gases, optoelectronic sensors of disease markers contained in exhaled air, and optical communication in open space.

In 2017, Professor Bielecki received the Award of the Minister of National Defense for his lifetime achievements.