This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.
Chapter
1. Introduction.
Chapter
2. Basic concepts of the semiconductor
physics.
Chapter
3. The electrical characteristics of the semiconductor at
high temperatures.
Chapter
4. The MOSFET.
Chapter
5. The First Generation
of the Unconventional Layout Styles for MOSFETs.
Chapter
6. The
Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of
MOSFETs.
Chapter
7. The Ionizing Radiations Effects in Electrical Parameters
and Figures of Merit of MOSFETs.
Chapter
8. The High Temperature Effects in
Electrical Parameters of Mosfets and the Results Obtained of the First and
Second Generation.
Salvador Pinillos Gimenez is a Full Professor at the Department of Electrical Engineering, Centro Universitário FEI (FEI-SP) and MTG2i Solutions Co., São Paulo, Brazil. In 1984, he received his B.Sc. degree in Electronic Engineering from UMC, São Paulo, Brazil. He obtained the M.Sc. degree in Electrical Engineering from Microelectronic Lab. of São Paulo University (LME/EPUSP) in 1990. In October 2004, he obtained the Ph.D. degree in Microelectronics. His general interests are in new MOSFETs, FinFETs, power devices, design and optimization of analog and radiofrequency CMOS ICs by using computational tools based on Artificial Inteligence (iMTGSPICE) and parallel digital processing.
Egon Henrique Salerno Galembeck is a researcher at MTG2i Solutions Co. in the research lines of design and optimization of analog and radio frequency CMOS ICs, electrical characterization of transistors in harsh environment and three-dimensional numerical simulation of MOS devices. In2013, he received the electrical engineering degree from Centro Universitário FEI, São Paulo, Brazil. He obtained the M. Sc. degree in Electrical Engineering in the area of Integrated Electronic Devices from Centro Universitário FEI, in September 2015. He received his Ph.D. degree in Electrical Engineering in the area of Nanoelectronics and Integrated Devices from Centro Universitário FEI, São Paulo, Brazil, in 2022.
