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Electromigration in Metals: Fundamentals to Nano-Interconnects [Kõva köide]

, , , (University of Texas, Austin)
  • Formaat: Hardback, 430 pages, kõrgus x laius x paksus: 250x174x24 mm, kaal: 980 g
  • Ilmumisaeg: 12-May-2022
  • Kirjastus: Cambridge University Press
  • ISBN-10: 1107032385
  • ISBN-13: 9781107032385
Teised raamatud teemal:
Electromigration in Metals: Fundamentals to Nano-InterconnectsSuurem pilt
  • Formaat: Hardback, 430 pages, kõrgus x laius x paksus: 250x174x24 mm, kaal: 980 g
  • Ilmumisaeg: 12-May-2022
  • Kirjastus: Cambridge University Press
  • ISBN-10: 1107032385
  • ISBN-13: 9781107032385
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9781107032385.html
Märksõnad:
"Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliableon-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers"--

Arvustused

' useful for graduate students in materials science and mechanical or electrical engineering Recommended.' J. Lambropoulos, Choice

Muu info

Learn to assess electromigration reliability and design resilient chips, building from fundamental physics to advanced methodologies.
Preface xi
1 Introduction to Electromigration
1(7)
References
5(3)
2 Fundamentals of Electromigration
8(26)
2.1 Introduction
8(1)
2.2 Thermodynamic Description of Electromigration
8(2)
2.3 Kinetic Analysis of Solute Effect on EM in Binary Alloys
10(5)
2.4 Theory of Electromigration
15(4)
2.5 Electromigration in Bulk Materials
19(10)
2.6 Summary
29(1)
References
29(5)
3 Thermal Stress Characteristics and Stress-Induced Void Formation in Aluminum and Copper Interconnects
34(46)
3.1 Technology Impact and Stress Effect on Electromigration
34(4)
3.2 Effect of Passivation on Thermal Stress Characteristics in Interconnect Lines
38(3)
3.3 Thermal Stress Measurements by X-Ray Diffraction for Passivated Metal Lines
41(7)
3.4 Thermal Stress Characteristics and Effect of Dielectric Passivation on Cu Damascene Lines
48(7)
3.5 Stress Relaxation and Stress-Induced Void Formation in Passivated Al Lines
55(7)
3.6 Stress Relaxation and Passivation Effects in Cu Damascene Films and Lines
62(8)
3.7 Stress-Induced Void Formation in Cu Damascene Line Structures
70(4)
3.8 Summary
74(1)
References
75(5)
4 Stress Evolution and Damage Formation in Confined Metal Lines under Electric Stressing: 1D Analysis
80(47)
4.1 Introduction
80(1)
4.2 Kinetics of EM-Induced Mass Transport and Stress Evolution in Confined Metal Lines
81(6)
4.3 Kinetics of EM-Induced Evolution of Vacancy Distribution in Interconnect Segments
87(1)
4.4 EM-Induced Stress Evolution in a Confined Metal Line: Korhonen's Equation
88(5)
4.5 Analytical Solutions for the ID Korhonen Equation
93(4)
4.6 Critical Stress for Void Formation
97(2)
4.7 An Approximate Derivation of the Void Nucleation Time
99(4)
4.8 Postvoiding Stress and Void Size Evolutions in Confined Metal Lines
103(6)
4.9 Voiding-Induced Degradation of Resistance of Metal Lines
109(2)
4.10 EM-Induced Void Migration
111(3)
4.11 Effect of Metal Microstructure on EM-Induced Stress Evolution: ID Modeling
114(5)
4.12 Summary
119(1)
References
120(7)
5 Electromigration in Cu Interconnect Structures
127(76)
5.1 Introduction
127(2)
5.2 Microstructure
129(2)
5.3 Resistivity
131(4)
5.4 Mass Transport and Damage Formation in Cu Damascene Structures
135(28)
5.5 The Blech Short-Length Effect
163(1)
5.6 EM Lifetime Scaling Rule
164(2)
5.7 Methods to Improve EM Reliability of the Cu Interconnect
166(27)
5.8 EM through Various Technology Nodes
193(2)
5.9 Summary
195(1)
References
196(7)
6 Scaling Effects on Microstructure of Cu and Co Nanointerconnects
203(48)
6.1 Introduction
203(1)
6.2 Precession Electron Diffraction Microscopy
204(4)
6.3 Scaling Effect on the Microstructure of Cu Interconnects
208(11)
6.4 Scaling Effect on the Microstructure of Co Interconnects
219(6)
6.5 Monte Carlo Simulation of the Microstructure Evolution in Nanointerconnects
225(9)
6.6 Simulation Results for Copper Interconnects
234(5)
6.7 Simulation Results for Cobalt Interconnects
239(3)
6.8 Simulated Bamboo--Polygrain Structures and Implications for EM Reliability
242(3)
6.9 Summary
245(2)
References
247(4)
7 Analysis of Electromigration-lnduced Stress Evolution and Voiding in Cu Damascene Lines with Microstructure
251(87)
7.1 Introduction
251(1)
7.2 EM-Induced Mass Transport
252(2)
7.3 Evolution of Vacancy and Plated Atom Concentrations in a 3D Confined Metal Line under Electric Current Stressing
254(5)
7.4 Volumetric Stress Generated by Vacancies and Plated Atoms in a Confined Metal Line
259(4)
7.5 Evolution of Stress and Vacancy-Plated Atom Concentrations in a Prevoiding State
263(3)
7.6 Major Approaches to Modeling EM-Induced Stress Evolution in Interconnects
266(6)
7.7 Effect of Microstructure on EM-Induced Degradation in Dual-Damascene Copper Interconnects
272(22)
7.8 Experimental Studies of EM-Induced Voiding in Interconnects
294(8)
7.9 Modeling of EM-Induced Void Motion and Shape Evolution
302(4)
7.10 Numerical Techniques
306(19)
7.11 EM-Induced Evolution of Stress-Induced Voids (SIV)
325(4)
7.12 Summary
329(1)
References
330(8)
8 Massive-Scale Statistical Studies for Electromigration
338(42)
8.1 Requirement for Massive Statistical EM Tests
338(1)
8.2 Wheatstone Bridge Technique for Al Interconnects
339(15)
8.3 Statistical Tests and Analysis for Cu Interconnects
354(19)
8.4 Implications for EM Reliability
373(2)
References
375(5)
9 Assessment of Electromigration Damage in Large On-Chip Power Grids
380(34)
9.1 Introduction
380(1)
9.2 Problems with the Standard Weakest Link Approximation for On-Chip Power Grid EM Assessment
380(10)
9.3 EM Assessment of Power Grids Based on Physical Modeling
390(1)
9.4 EM Induced Stress Evolution under AC and Pulse Current Loads
391(6)
9.5 On-Chip Power/Ground EM Assessment
397(12)
9.6 Summary
409(1)
References
410(4)
Index 414
Paul Ho is Professor Emeritus in the Department of Mechanical Engineering and the Texas Materials Institute at the University of Texas at Austin. He has received research awards from the Electrochemical Society, IEEE, IITC and Semiconductor Industry Association, among others. Chao-Kun Hu has recently retired as a Research Staff Member in the Reliability Department at the T.J. Watson Research Center of IBM. He received IBM Corporate awards, IEEE Cledo Brunetti award, EDS Recognition and IITC Best Paper awards, and Invention of the Year NY Intellectual Property Law Association. Martin Gall is the director of the U.S. Operations Reliability Engineering Department at GLOBALFOUNDRIES Inc. He is an IEEE TDMR editor and the recipient of an IEEE IITC Best Paper and SRC Mentor of the Year Award. Valeriy Sukharev is principal engineer for Calibre Design Solutions, Siemens EDA, Siemens Digital Industries Software. He was a recipient of the 2014 and 2018 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best Paper awards from ICCAD 2016, 2019 and 2020.