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Emerging Non-Volatile Memories 2014 ed. [Kõva köide]

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  • Formaat: Hardback, 273 pages, kõrgus x laius: 235x155 mm, kaal: 6083 g, 112 Illustrations, color; 44 Illustrations, black and white; XII, 273 p. 156 illus., 112 illus. in color., 1 Hardback
  • Ilmumisaeg: 19-Nov-2014
  • Kirjastus: Springer-Verlag New York Inc.
  • ISBN-10: 1489975365
  • ISBN-13: 9781489975362
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  • Formaat: Hardback, 273 pages, kõrgus x laius: 235x155 mm, kaal: 6083 g, 112 Illustrations, color; 44 Illustrations, black and white; XII, 273 p. 156 illus., 112 illus. in color., 1 Hardback
  • Ilmumisaeg: 19-Nov-2014
  • Kirjastus: Springer-Verlag New York Inc.
  • ISBN-10: 1489975365
  • ISBN-13: 9781489975362

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.

This book also:

Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.

Provides an overview of non-volatile memory fundamentals.

Broadens readers’ understanding of future trends in non-volatile memories.

Part I Ferroic Memories
1 Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories
3(34)
Orlando Auciello
Carlos A. Paz de Araujo
Jolanta Celinska
2 Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits
37(66)
B. Dieny
R. Sousa
G. Prenat
L. Prejbeanu
O. Redon
3 Emerging Multiferroic Memories
103(66)
Lane W. Martin
Ying-Hao Chu
R. Ramesh
Part II Resistance and Phase Change Memories
4 Phase-Change Materials for Data Storage Applications
169(26)
Dominic Lencer
Martin Salinga
Matthias Wuttig
5 Emerging Oxide Resistance Change Memories
195(24)
Myoung-Jae Lee
6 Oxide Based Memristive Nanodevices
219(40)
J. Joshua Yang
Gilberto Medeiros-Ribeiro
Part III Probe Memories
7 Ferroelectric Probe Storage Devices
259
Seungbum Hong
Yunseok Kim