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Emerging Technologies with Advanced Devices from Micro to Nano: ETMN 2024 [Kõva köide]

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  • Formaat: Hardback, 998 pages, kõrgus x laius: 235x155 mm, 422 Illustrations, color; 155 Illustrations, black and white; XIV, 998 p. 577 illus., 422 illus. in color., 1 Hardback
  • Sari: Lecture Notes in Electrical Engineering 1370
  • Ilmumisaeg: 11-Sep-2025
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3031843304
  • ISBN-13: 9783031843303
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  • Formaat: Hardback, 998 pages, kõrgus x laius: 235x155 mm, 422 Illustrations, color; 155 Illustrations, black and white; XIV, 998 p. 577 illus., 422 illus. in color., 1 Hardback
  • Sari: Lecture Notes in Electrical Engineering 1370
  • Ilmumisaeg: 11-Sep-2025
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3031843304
  • ISBN-13: 9783031843303
Teised raamatud teemal:

This book presents the proceedings of the 6th International Conference on Emerging Technologies: Micro to Nano (ETMN), held in New Delhi, India, on November 22-23, 2024. It showcases advances and innovations in micro and nanotechnologies and covers topics such as nano composites, nano materials, micro/nano fluidics, micro optics, organic and flexible electronics, advanced materials for nano devices, MEMS, smart biomimetic sensors, electrochemical sensors, acoustic and optical sensors, micro/nano sensors, wearable sensors, intelligent instrumentation, micro/nano electronics, nano antenna and RF system design, wireless sensor networks, applications of AI and IoT-based system, and structural health monitoring (SHM).

A refractive index based plasmonic sensor with enhanced figure of merit
using Titanate material in a three layer heterostructure.- Custard Apple Peel
Biochar based  Nanocomposite as a Novel Adsorbent for Removal of Acid Red 114
Dye Adsorption and Phytotoxicity Studies.- Sustainable fabrication of
palladium nanoparticles coated cotton fabric using Citrus limon leaf
extract.- Fabrication and Characterization of a Film Bulk Acoustic Wave
Resonator Using ZnO Piezo layer.- The atomically thin few layer of WS2
nanosheets in the Field Effect Transistor application.