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Fundamentals of Semiconductor Devices 2nd edition [Kõva köide]

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Richard Anderson, Betty Anderson

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Formaat: Hardback, 832 pages, kõrgus x laius x paksus: 239x196x33 mm, kaal: 1302 g, 375 Illustrations
Ilmumisaeg: 16-Apr-2017
Kirjastus: McGraw-Hill Inc.,US
ISBN-10: 0073529567
ISBN-13: 9780073529561

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Formaat: Hardback, 832 pages, kõrgus x laius x paksus: 239x196x33 mm, kaal: 1302 g, 375 Illustrations
Ilmumisaeg: 16-Apr-2017
Kirjastus: McGraw-Hill Inc.,US
ISBN-10: 0073529567
ISBN-13: 9780073529561

Teised raamatud teemal:

Püsilink: https://www.kriso.ee/db/9780073529561.html

Märksõnad:

Fundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. With this emphasis, the reader will appreciate the underlying physics behind the equations derived and their range of applicability. The author’s clear writing style, comprehensive coverage of the core material, and attention to current topics are key strengths of this book.

Preface

xii

PART 1 Materials

(179)

Chapter 1 Electron Energy and States in Semiconductors

(45)

1.1 Introduction and Preview

(1)

1.2 A Brief History

(1)

1.3 Application to the Hydrogen Atom

(16)

1.3.1 The Bohr Model for The Hydrogen Atom

(6)

1.3.2 Application to Molecules: Covalent Bonding

(2)

1.3.3 Quantum Numbers and the Pauli Exclusion Principle

(1)

1.3.4 Covalent Bonding in Crystalline Solids

(7)

1.4 Wave-Particle Duality

(1)

1.5 The Wave Function

(1)

1.5.1 Probability and the Wave Function

(1)

1.6 The Electron Wave Function

(10)

1.6.1 The Free Electron in One Dimension

(3)

1.6.2 The De Broglie Relationship

(1)

1.6.3 The Free Electron in Three Dimensions

(1)

1.6.4 The Quasi-Free Electron Model

(4)

1.6.5 Reflection and Tunneling

(1)

1.7 A First Look at Optical Emission and Absorption

(6)

1.8 Crystal Structures, Planes, and Directions

(2)

1.9 Summary

(1)

1.10 References

(1)

1.11 Review Questions

(1)

1.12 Problems

(5)

Chapter 2 Homogeneous Semiconductors

(65)

2.1 Introduction and Preview

(1)

2.2 Pseudo-Classical Mechanics for Electrons in Crystals

(8)

2.2.1 One-Dimensional Crystals

(6)

2.2.2 Three-Dimensional Crystals

(2)

2.3 Conduction Band Structure

(1)

2.4 Valence Band Structure

(2)

2.5 Intrinsic Semiconductors

(2)

2.6 Extrinsic Semiconductors

(6)

2.6.1 Donors

(4)

2.6.2 Acceptors

(2)

2.7 The Concept of Holes

(2)

2.7.1 Hole Charge

(2)

2.8 Effective Mass of Electrons and Holes

(2)

2.9 Density-of-States Functions for Electrons in Bands

(1)

2.9.1 Density of States and Density-of-States Effective Mass

(1)

2.10 Fermi-Dirac Statistics

(5)

2.10.1 Fermi-Dirac Statistics for Electrons and Holes in Bands

(3)

2.11 Electron and Hole Distributions with Energy

(12)

2.12 Temperature Dependence of Carrier Concentrations in Nondegenerate Semiconductors

(5)

2.12.1 Carrier Concentrations at High Temperatures

(4)

2.12.2 Carrier Concentrations at Low Temperatures (Carrier Freeze-Out)

(1)

2.13 Degenerate Semiconductors

(6)

2.13.1 Impurity-Induced Band-Gap Narrowing

(2)

2.13.2 Apparent Band-Gap Narrowing

(3)

2.14 Summary

101

(2)

2.14.1 Nondegenerate Semiconductors

102

(1)

2.14.2 Degenerate Semiconductors

103

(1)

2.15 References

103

(1)

2.16 Review Questions

104

(1)

2.17 Problems

104

(9)

Chapter 3 Current Flow in Homogeneous Semiconductors

113

(49)

3.1 Introduction

113

(1)

3.2 Drift Current

113

(4)

3.3 Carrier Mobility

117

(13)

3.3.1 Carrier Scattering

121

(2)

3.3.2 Scattering Mobility

123

(1)

3.3.3 Impurity Band Mobility

124

(2)

3.3.4 Temperature Dependence of Mobility

126

(1)

3.3.5 High-Field Effects

126

(4)

3.4 Diffusion Current

130

(3)

3.5 Carrier Generation and Recombination

133

(2)

3.5.1 Band-to-Band Generation and Recombination

135

(1)

3.5.2 Two-Step Processes

135

(1)

3.6 Optical Processes in Semiconductors

135

(6)

3.6.1 Absorption

136

(3)

3.6.2 Emission

139

(2)

3.7 Continuity Equations

141

(3)

3.8 Minority Carrier Lifetime

144

(5)

3.8.1 Rise Time

146

(1)

3.8.2 Fall Time

146

(3)

3.9 Minority Carrier Diffusion Lengths

149

(3)

3.10 Quasi Fermi Levels

152

(2)

3.11 Summary

154

(2)

3.12 References

156

(1)

3.13 Review Questions

156

(1)

3.14 Problems

157

(5)

Chapter 4 Nonhomogeneous Semiconductors

162

(18)

4.1 Constancy of The Fermi Level at Equilibrium

162

(2)

4.2 Graded Doping

164

(6)

4.3 Nonuniform Composition

170

(3)

4.4 Graded Doping and Graded Composition Combined

173

(2)

4.5 Summary

175

(1)

4.6 References

175

(1)

4.7 Review Questions

175

(1)

4.8 Problems

176

(4)

Supplement to Part 1 Introduction to Quantum Mechanics

180

(43)

S1.1 Introduction

180

(1)

S1.2 The Wave Function

180

(2)

S1.3 Probability and the Wave Function

182

(1)

S1.3.1 Particle in a One-Dimensional Potential Well

182

(2)

S1.4 Schrodinger's Equation

184

(1)

S1.5 Applying Schrodinger's Equation to Electrons

185

(1)

S1.6 Some Results From Quantum Mechanics

186

(21)

S1.6.1 The Free Electron

187

(1)

S1.6.2 The Quasi-Free Electron

188

(1)

S1.6.3 The Potential Energy Well

189

(1)

S1.6.4 The Infinite Potential Well in One Dimension

190

(3)

S1.6.5 Reflection and Transmission at a Finite Potential Barrier

193

(2)

S1.6.6 Tunneling

195

(8)

S1.6.7 The Finite Potential Well

203

(2)

S1.6.8 The Hydrogen Atom Revisited

205

(1)

S1.6.9 The Uncertainty Principle

205

(2)

S1.7 Phonons

207

(10)

S1.7.1 Carrier Scattering by Phonons

211

(2)

S1.7.2 Indirect Electron Transitions

213

(4)

S1.8 Summary

217

(1)

S1.9 References

217

(1)

S1.10 Review Questions

217

(1)

S1.11 Problems

218

(5)

PART 2 Diodes

223

(115)

Chapter 5 Prototype pn Homojunctions

227

(75)

5.1 Introduction

227

(2)

5.2 Prototype pn Junctions (Qualitative)

229

(16)

5.2.1 Energy Band Diagrams of Prototype pn Junctions

229

(7)

5.2.2 Description of Current Flow in a pn Prototype Homojunction

236

(5)

5.2.3 Tunnel Diodes

241

(4)

5.3 Prototype pn Homojunctions (Quantitative)

245

(32)

5.3.1 Energy Band Diagram at Equilibrium (Step Junction)

245

(3)

5.3.2 Energy Band Diagram with Applied Voltage

248

(6)

5.3.3 Current-Voltage Characteristics of pn Homojunctions

254

(21)

5.3.4 Reverse-Bias Breakdown

275

(2)

5.4 Small-Signal Impedance of Prototype Homojunctions

277

(8)

5.4.1 Junction (Differential) Resistance

278

(1)

5.4.2 Junction (Differential) Capacitance

279

(2)

5.4.3 Stored-Charge Capacitance

281

(4)

5.5 Transient Effects

285

(6)

5.5.1 Turn-Off Transient

285

(2)

5.5.2 Turn-On Transient

287

(4)

5.6 Effects of Temperature

291

(1)

5.7 Summary

292

(4)

5.8 Review Questions

296

(1)

5.9 Problems

296

(6)

Chapter 6 Additional Considerations for Diodes

302

(36)

6.1 Introduction

302

(1)

6.2 Nonstep Homojunctions

302

(8)

6.2.1 Linearly Graded Junctions

306

(3)

6.2.2 Hyperabrupt Junctions

309

(1)

6.3 Semiconductor Heterojunctions

310

(13)

6.3.1 The Energy Band Diagrams of Semiconductor--Semiconductor Heterojunctions

310

(4)

6.3.2 Tunneling-Induced Dipoles

314

(4)

6.3.3 Effects of Interface States

318

(4)

6.3.4 Effects of Lattice Mismatch on Heterojunctions

322

(1)

6.4 Metal-Semiconductor Junctions

323

(9)

6.4.1 Ideal Metal-Semiconductor Junctions (Electron Affinity Model)

323

(2)

6.4.2 Influence of Interface-Induced Dipoles

325

(1)

6.4.3 The Current-Voltage Characteristics of Metal-Semiconductor Junctions

326

(4)

6.4.4 Ohmic (Low-Resistance) Contacts

330

(1)

6.4.5 I-Va Characteristics of Heterojunction Diodes

331

(1)

6.5 Capacitance in Nonideal Junctions and Heterojunctions

332

(1)

6.6 Summary

332

(1)

6.7 References

333

(1)

6.8 Review Questions

333

(1)

6.9 Problems

334

(4)

Supplement to Part 2 Diodes

338

(19)

S2.1 Introduction

338

(1)

S2.2 Dielectric Relaxation Time

338

(4)

S2.2.1 Case 1: Dielectric Relaxation Time for Majority Carriers

338

(3)

S2.2.2 Case 2: Dielectric Relaxation Time for Minority Carriers

341

(1)

S2.3 Junction Capacitance

342

(6)

S2.3.1 Junction Capacitance in a Prototype (Step) Junction

342

(2)

S2.3.2 Junction Capacitance in a Nonuniformly Doped Junction

344

(1)

S2.3.3 Varactors

345

(1)

S2.3.4 Stored-Charge Capacitance of Short-Base Diodes

346

(2)

S2.4 Second-Order Effects in Schottky Diodes

348

(5)

S2.4.1 Tunneling Through Schottky Barriers

349

(2)

S2.4.2 Barrier Lowering in Schottky Diodes Due to The Image Effect

351

(2)

S2.5 Summary

353

(1)

S2.6 Review Questions

354

(1)

S2.7 References

354

(1)

S2.8 Problems

354

(3)

PART 3 Field-Effect Transistors

357

(136)

The Generic FET

358

(4)

Transistors in Circuits

362

(1)

The Basis for Deriving the ID-VDS Characteristics of a FET

362

(5)

Chapter 7 The MOSFET

367

(72)

7.1 Introduction

367

(1)

7.2 MOSFETs (Qualitative)

367

(22)

7.2.1 Introduction to MOS Capacitors

367

(6)

7.2.2 MOS Capacitor Hybrid Diagrams

373

(3)

7.2.3 MOSFETs at Equilibrium (Qualitative)

376

(2)

7.2.4 MOSFETs Not at Equilibrium (Qualitative)

378

(11)

7.3 Drift Model for MOSFETs (Quantitative)

389

(32)

7.3.1 Long-Channel Drift MOSFET Model with Constant Channel Mobility

390

(14)

7.3.2 More Realistic Long-Channel Models: Effect of Fields on the Mobility

404

(16)

7.3.3 Series Resistance

420

(1)

7.4 Comparison of Models with Experiment

421

(2)

7.5 Ballistic Model for MOSFETs

423

(3)

7.6 Some Short-Channel Effects

426

(3)

7.6.1 Dependence of Effective Channel Length on VDS

426

(2)

7.6.2 Dependence of Threshold Voltage on the Drain Voltage

428

(1)

7.7 Subthreshold Leakage Current

429

(3)

7.8 Summary

432

(3)

7.9 References

435

(1)

7.10 Review Questions

435

(1)

7.11 Problems

436

(3)

Chapter 8 Other Field-Effect Transistors

439

(54)

8.1 Introduction

439

(1)

8.2 Measurement of Threshold Voltage and Low-Field Mobility

440

(4)

8.3 Complementary MOSFETs (CMOS)

444

(5)

8.3.1 Operation of The CMOS Inverter

444

(3)

8.3.2 Matching of CMOS Devices

447

(2)

8.4 Switching in CMOS Inverter Circuits

449

(5)

8.4.1 Effect of Load Capacitance

449

(2)

8.4.2 Propagation (Gate) Delay in CMOS Switching Circuits

451

(3)

8.4.3 Pass-Through Current in CMOS Switching

454

(1)

8.5 Other MOSFETs

454

(14)

8.5.1 Silicon on Insulator (SOI) MOSFETs

454

(9)

8.5.2 FinFETs

463

(2)

8.5.3 Nonvolatile MOSFETs

465

(3)

8.6 Other FETS

468

(16)

8.6.1 Heterojunction Field-Effect Transistors (HFETs)

468

(7)

8.6.2 Metal-Semiconductor Field-Effect Transistors (MESFETs)

475

(4)

8.6.3 Junction Field-Effect Transistors (JFETs)

479

(1)

8.6.4 Tunnel Field-Effect Transistors (TFETs)

480

(4)

8.7 Bulk Channel FETs: Quantitative

484

(3)

8.8 Summary

487

(1)

8.9 References

488

(1)

8.10 Review Questions

489

(1)

8.11 Problems

489

(4)

Supplement to Part 3 Additional Consideration for MOSFETs

493

(46)

S3.1 Introduction

493

(1)

S3.2 Dependence of the Channel Charge QCh on the Longitudinal Field %L

493

(2)

S3.3 Threshold Voltage for MOSFETs

495

(11)

S3.3.1 Fixed Charge

496

(1)

S3.3.2 Interface Trapped Charge

497

(1)

S3.3.3 Bulk Charge

497

(1)

S3.3.4 Effect of Charges on the Threshold Voltage

498

(1)

S3.3.5 Flat Band Voltage

499

(3)

S3.3.6 Threshold Voltage Control

502

(2)

S3.3.7 Channel Quantum Effects

504

(2)

S3.4 MOSFET Analog Equivalent Circuit

506

(5)

S3.4.1 Small-Signal Equivalent Circuit

507

(4)

S3.4.2 CMOS Amplifiers

511

(1)

S3.5 Unity Current Gain Cutoff Frequency fT

511

(3)

S3.6 MOS Capacitors

514

(7)

S3.6.1 Ideal MOS Capacitance

514

(5)

S3.6.2 The C-VG Characteristics of Real MOS Capacitors

519

(1)

S3.6.3 MOSFET Parameter Analyses from C-Vq Measurements

520

(1)

S3.7 Dynamic Random-Access Memories (DRAMs)

521

(2)

S3.8 MOSFET Scaling [ 6]

523

(3)

S3.9 Device and Interconnect Degradation

526

(6)

S3.9.1 MOSFET Integrated Circuit Reliability

531

(1)

S3.10 Summary

532

(1)

S3.11 References

533

(1)

S3.12 Review Questions

534

(1)

S3.13 Problems

534

(5)

PART 4 Bipolar Junction Transistors

539

(84)

Chapter 9 Bipolar Junction Transistors: Statics

544

(46)

9.1 Introduction

544

(4)

9.2 Output Characteristics (Qualitative)

548

(2)

9.3 Current Gain

550

(1)

9.4 Model of a Prototype BJT

551

(12)

9.4.7 Collection Efficiency M

554

(1)

9.4.2 Injection Efficiency γ

555

(2)

9.4.3 Base Transport Efficiency αT

557

(6)

9.5 Doping Gradients in BJTs

563

(7)

9.5.7 The Graded-Base Transistor

565

(5)

9.5.2 Effect of Base Field on β

570

(1)

9.6 Heterojunction Bipolar Transistors (HBTs)

570

(9)

9.6.7 Uniformly Doped HBT

571

(4)

9.6.2 Graded-Composition HBT: (Si: SiGe-Base: Si HBTs)

575

(2)

9.6.3 Double Heterojunction Bipolar Transistor, (DHBT)

577

(2)

9.7 Comparison of Si-Base, SiGe-Base, and GaAs-Base HBTs

579

(1)

9.8 The Basic Ebers-Moll dc Model

579

(4)

9.9 Summary

583

(1)

9.10 References

584

(1)

9.11 Review Questions

585

(1)

9.12 Problems

586

(4)

Chapter 10 Time-Dependent Analysis of BJTS

590

(33)

10.1 Introduction

590

(1)

10.2 Ebers-Moll ac Model

590

(2)

10.3 Small-Signal Equivalent Circuits

592

(6)

10.3.1 Hybrid-Pi Models

594

(4)

10.4 Stored-Charge Capacitance in BJTs

598

(5)

10.5 Frequency Response

603

(5)

10.5.1 Unity Current Gain Frequency fT

604

(2)

10.5.2 Base Transit Time tT

606

(1)

10.5.3 Base-Collector Transit Time tBC

607

(1)

10.5.4 Maximum Oscillation Frequency fmax

608

(1)

10.6 High-Frequency Transistors

608

(3)

10.6.1 Double Poly Si Self-Aligned Transistor

608

(3)

10.7 BJT Switching Transistor

611

(5)

10.7.1 Output Low-To-High Transition Time

612

(2)

10.7.2 Schottky-Clamped Transistor

614

(1)

10.7.3 Double Heterojunction Bipolar Transistor (DHBT)

615

(1)

10.8 BJTs, MOSFETs, and BiMOS

616

(4)

10.8.1 Comparison of BJTs and MOSFETs

616

(2)

10.8.2 BiMOS

618

(2)

10.9 Summary

620

(1)

10.10 References

620

(1)

10.11 Review Questions

621

(1)

10.12 Problems

621

(2)

Supplement to Part 4 Bipolar Devices

623

(20)

S4.1 Introduction

623

(1)

S4.2 Current Crowding and Base Resistance in BJTs

623

(4)

S4.3 Base Width Modulation (Early Effect)

627

(5)

S4.4 Avalanche Breakdown

632

(1)

S4.5 High Injection

632

(1)

S4.6 Base Push-Out (Kirk) Effect

633

(2)

S4.7 Recombination in the Emitter-Base Junction

635

(1)

S4.8 Offset Voltage in BJTs

636

(1)

S4.9 Lateral Bipolar Transistors

637

(1)

S4.10 Summary

638

(1)

S4.11 References

638

(1)

S4.12 Review Questions

639

(1)

S4.13 Problems

639

(4)

PART 5 Optoelectronic and Power Semiconductor Devices

643

(107)

Chapter 11 Optoelectronic Devices

644

(55)

11.1 Introduction and Preview

644

(1)

11.2 Photodetectors

644

(17)

77.2.7 Generic Photodetector

644

(8)

11.2.2 Solar Cells

652

(6)

11.2.3 The pin (PIN) Photodetector

658

(2)

11.2.4 Avalanche Photodiodes

660

(1)

11.3 Light-Emitting Diodes

661

(13)

11.3.1 Spontaneous Emission in a Forward-Biased Junction

661

(3)

11.3.2 Blue, Utraviolet, and White LEDs

664

(1)

11.3.3 Infrared LEDs

664

(7)

11.3.4 White LEDs and Solid-State Lighting

671

(3)

11.4 Laser Diodes

674

(12)

11.4.1 Optical Gain

675

(2)

11.4.2 Feedback

677

(3)

11.4.3 Gain + Feedback = Laser

680

(2)

11.4.4 Laser Structures

682

(4)

11.4.5 Other Semiconductor Laser Materials

686

(1)

11.5 Image Sensors (Imagers)

686

(6)

11.5.1 Charge-Coupled Devices (CCDs)

686

(2)

11.5.2 Linear Image Sensors

688

(3)

11.5.3 Area Image Sensors

691

(1)

11.6 Summary

692

(1)

11.7 References

693

(1)

11.8 Review Questions

694

(1)

11.9 Problems

694

(5)

Chapter 12 Power Semiconductor Devices

699

(51)

12.1 Introduction and Preview

699

(1)

12.2 Rectifying Diodes

700

(25)

12.2.1 Junction Breakdown

700

(10)

12.2.2 Specific On-Resistance

710

(8)

12.2.3 Transient Losses

718

(5)

12.2.4 Merged Pin-Schottky (MPS) Diodes

723

(2)

12.3 Thyristors (npnp Switching Devices)

725

(11)

12.3.1 The Four-Layer Diode Switch

725

(4)

12.3.2 Two-Transistor Model of an npnp Switch

729

(1)

12.3.3 Silicon-Controlled Rectifiers (SCRs)

730

(3)

12.3.4 TRIAC

733

(2)

12.3.5 Gate Turn-Off Thyristors (GTOs)

735

(1)

12.4 The Power MOSFET

736

(4)

12.5 The Insulated-Gate Bipolar Transistor

740

(5)

12.6 Power MOSFET versus IGBT

745

(1)

12.7 Summary

746

(1)

12.8 References

747

(1)

12.9 Review Questions

748

(1)

12.10 Problems

748

(2)

Appendices

Appendix A Constants

750

(4)

Appendix B List of Symbols

754

(15)

Appendix C Fabrication

769

(23)

C.1 Introduction

769

(1)

C.2 Substrate Preparation

769

(8)

C.2.1 The Raw Material

770

(1)

C.2.2 Crystal Growth

770

(3)

C.2.3 Defects

773

(1)

C.2.4 Epitaxy

774

(3)

C.3 Doping

777

(3)

C.3.1 Diffusion

777

(1)

C.3.2 Ion Implantation

778

(2)

C.4 Lithography

780

(2)

C.5 Conductors and Insulators

782

(3)

C.5.1 Metallization

782

(1)

C.5.2 Poly Si

783

(1)

C.5.3 Oxidation

783

(1)

C.5.4 Silicon Nitride

784

(1)

C.6 Silicon Oxynitride (SiOxNY or SiON)

785

(2)

C.7 Clean Rooms

787

(1)

C.8 Packaging

787

(4)

C.8.1 Wire Bonding

788

(1)

C.8.2 Lead Frame

789

(1)

C.8.3 Surface-Mount Packages

790

(1)

C.9 Summary

791

(1)

Appendix D Some Useful Integrals

792

(1)

Appendix E Useful Equations

793

(10)

General Physics

793

(1)

Semiconductor Materials

793

(1)

Junctions

794

(2)

Field-Effect Transistors

796

(2)

Bipolar Junction Transistors

798

(3)

Optoelectronic Devices

801

(1)

Power Semiconductor Devices

802

(1)

Index

803

Fundamentals of Semiconductor Devices 2nd edition [Kõva köide]

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Otsing

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Teemad Ingliskeelsed raamatud

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