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GaN Transistors for Efficient Power Conversion 2nd edition [Kõva köide]

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  • Formaat: Hardback, 266 pages, kõrgus x laius x paksus: 252x175x20 mm, kaal: 626 g
  • Ilmumisaeg: 29-Aug-2014
  • Kirjastus: John Wiley & Sons Inc
  • ISBN-10: 1118844769
  • ISBN-13: 9781118844762
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GaN Transistors for Efficient Power Conversion 2nd editionSuurem pilt
  • Formaat: Hardback, 266 pages, kõrgus x laius x paksus: 252x175x20 mm, kaal: 626 g
  • Ilmumisaeg: 29-Aug-2014
  • Kirjastus: John Wiley & Sons Inc
  • ISBN-10: 1118844769
  • ISBN-13: 9781118844762
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9781118844762.html
Märksõnad:
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.

This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.

With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DCDC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors.

Key features:





Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on devicecircuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Foreword xiii
Acknowledgments xv
1 GaN Technology Overview
1(18)
1.1 Silicon Power MOSFETs 1976--2010
1(1)
1.2 The GaN Journey Begins
2(1)
1.3 Why Gallium Nitride?
2(4)
1.3.1 Band Gap (Eg)
3(1)
1.3.2 Critical Field (Ecrit)
3(1)
1.3.3 On-Resistance (RDS(on))
4(1)
1.3.4 The Two-Dimensional Electron Gas
4(2)
1.4 The Basic GaN Transistor Structure
6(4)
1.4.1 Recessed Gate Enhancement-Mode Structure
7(1)
1.4.2 Implanted Gate Enhancement-Mode Structure
7(1)
1.4.3 pGaN Gate Enhancement-Mode Structure
8(1)
1.4.4 Cascode Hybrid Enhancement-Mode Structure
8(2)
1.4.5 Reverse Conduction in HEMT Transistors
10(1)
1.5 Building a GaN Transistor
10(4)
1.5.1 Substrate Material Selection
10(1)
1.5.2 Growing the Heteroepitaxy
11(1)
1.5.3 Processing the Wafer
12(2)
1.5.4 Making Electrical Connection to the Outside World
14(1)
1.6 Summary
14(5)
References
17(2)
2 GaN Transistor Electrical Characteristics
19(20)
2.1 Introduction
19(1)
2.2 Key Device Parameters
19(8)
2.2.1 Breakdown Voltage (BVDSS) and Leakage Current (IDSS)
19(5)
2.2.2 On-Resistance (RDS(on))
24(2)
2.2.3 Threshold Voltage (VGS(th) or Vth)
26(1)
2.3 Capacitance and Charge
27(4)
2.4 Reverse Conduction
31(2)
2.5 Thermal Resistance
33(3)
2.6 Transient Thermal Impedance
36(1)
2.7 Summary
37(2)
References
38(1)
3 Driving GaN Transistors
39(16)
3.1 Introduction
39(2)
3.2 Gate Drive Voltage
41(2)
3.3 Bootstrapping and Floating Supplies
43(1)
3.4 dv/dt Immunity
44(3)
3.5 di/dt Immunity
47(1)
3.6 Ground Bounce
48(2)
3.7 Common Mode Current
50(1)
3.8 Gate Driver Edge Rate
51(1)
3.9 Driving Cascode GaN Devices
51(2)
3.10 Summary
53(2)
References
53(2)
4 Layout Considerations for GaN Transistor Circuits
55(15)
4.1 Introduction
55(1)
4.2 Minimizing Parasitic Inductance
55(3)
4.3 Conventional Power Loop Designs
58(2)
4.4 Optimizing the Power Loop
60(1)
4.5 Paralleling GaN Transistors
61(8)
4.5.1 Paralleling GaN Transistors for a Single Switch
61(4)
4.5.2 Paralleling GaN Transistors for Half-Bridge Applications
65(4)
4.6 Summary
69(1)
References
69(1)
5 Modeling and Measurement of GaN Transistors
70(19)
5.1 Introduction
70(1)
5.2 Electrical Modeling
70(6)
5.2.1 Basic Modeling
70(3)
5.2.2 Limitations of Basic Modeling
73(2)
5.2.3 Limitations of Circuit Modeling
75(1)
5.3 Thermal Modeling
76(7)
5.3.1 Improving Thermal Performance
77(2)
5.3.2 Modeling of Multiple Die
79(3)
5.3.3 Modeling of Complex Systems
82(1)
5.4 Measuring GaN Transistor Performance
83(4)
5.4.1 Voltage Measurement Requirements
83(2)
5.4.2 Current Measurement Requirement
85(2)
5.5 Summary
87(2)
References
87(2)
6 Hard-Switching Topologies
89(39)
6.1 Introduction
89(1)
6.2 Hard-Switching Loss Analysis
89(12)
6.2.1 Switching Losses
91(5)
6.2.2 Output Capacitance (COSS) Losses
96(1)
6.2.3 Gate Charge (QG) Losses
96(1)
6.2.4 Reverse Conduction Losses (PSD)
97(2)
6.2.5 Reverse Recovery (QRR) Losses
99(1)
6.2.6 Total Hard-Switching Losses
99(1)
6.2.7 Hard-Switching Figure of Merit
100(1)
6.3 External Factors Impacting Hard-Switching Losses
101(5)
6.3.1 Impact of Common-Source Inductance
101(2)
6.3.2 Impact of High Frequency Power-Loop Inductance on Device Losses
103(3)
6.4 Reducing Body Diode Conduction Losses in GaN Transistors
106(3)
6.5 Frequency Impact on Magnetics
109(1)
6.5.1 Transformers
109(1)
6.5.2 Inductors
110(1)
6.6 Buck Converter Example
110(16)
6.6.1 Output Capacitance Losses
112(2)
6.6.2 Gate Losses (PG)
114(3)
6.6.3 Body Diode Conduction Losses (PSD)
117(2)
6.6.4 Switching Losses (Psw)
119(1)
6.6.5 Total Dynamic Losses (P Dynamic)
120(1)
6.6.6 Conduction Losses (P Conduction)
120(1)
6.6.7 Total Device Hard-Switching Losses (P HS)
121(1)
6.6.8 Inductor Losses (PL)
122(1)
6.6.9 Total Buck Converter Estimated Losses (PTotal)
122(1)
6.6.10 Buck Converter Loss Analysis Accounting for Common Source Inductance
123(2)
6.6.11 Experimental Results for the Buck Converter
125(1)
6.7 Summary
126(2)
References
126(2)
7 Resonant and Soft-Switching Converters
128(22)
7.1 Introduction
128(1)
7.2 Resonant and Soft-Switching Techniques
128(5)
7.2.1 Zero-Voltage and Zero-Current Switching
128(1)
7.2.2 Resonant DC-DC Converters
129(1)
7.2.3 Resonant Network Combinations
130(1)
7.2.4 Resonant Network Operating Principles
131(1)
7.2.5 Resonant Switching Cells
132(1)
7.2.6 Soft-Switching DC-DC Converters
133(1)
7.3 Key Device Parameters for Resonant and Soft-Switching Applications
133(6)
7.3.1 Output Charge (QOSS)
133(1)
7.3.2 Determining Output Charge from Manufacturers' Datasheet
134(1)
7.3.3 Comparing Output Charge of GaN Transistors and Si MOSFETs
135(1)
7.3.4 Gate Charge (QG)
136(1)
7.3.5 Determining Gate Charge for Resonant and Soft-Switching Applications
136(2)
7.3.6 Comparing Gate Charge of GaN Transistors and Si MOSFETs
138(1)
7.3.7 Comparing Performance Metrics of GaN Transistors and Si MOSFETs
138(1)
7.4 High-Frequency Resonant Bus Converter Example
139(9)
7.4.1 Resonant GaN and Si Bus Converter Designs
142(1)
7.4.2 GaN and Si Device Comparison
143(1)
7.4.3 Zero-Voltage Switching Transition
144(1)
7.4.4 Efficiency and Power Loss Comparison
145(3)
7.5 Summary
148(2)
References
148(2)
8 RF Performance
150(22)
8.1 Introduction
150(1)
8.2 Differences Between RF and Switching Transistors
151(2)
8.3 RF Basics
153(1)
8.4 RF Transistor Metrics
154(7)
8.4.1 Determining the High-Frequency Characteristics of RF FETs
155(1)
8.4.2 Pulse Testing for Thermal Considerations
156(2)
8.4.3 Analyzing the S-Parameters
158(3)
8.5 Amplifier Design Using Small-Signal S-Parameters
161(1)
8.5.1 Conditionally Stable Bilateral Transistor Amplifier Design
161(1)
8.6 Amplifier Design Example
162(8)
8.6.1 Matching and Bias Tee Network Design
165(3)
8.6.2 Experimental Verification
168(2)
8.7 Summary
170(2)
References
170(2)
9 GaN Transistors for Space Applications
172(7)
9.1 Introduction
172(1)
9.2 Failure Mechanisms
172(1)
9.3 Standards for Radiation Exposure and Tolerance
173(1)
9.4 Gamma Radiation Tolerance
173(2)
9.5 Single-Event Effects (SEE) Testing
175(1)
9.6 Performance Comparison between GaN Transistors and Rad-Hard Si MOSFETs
176(1)
9.7 Summary
177(2)
References
177(2)
10 Application Examples
179(53)
10.1 Introduction
179(1)
10.2 Non-Isolated DC-DC Converters
179(12)
10.2.1 12 VIN -- 1.2 VOUT Buck Converter
180(4)
10.2.2 28 VIN -- 3.3 VOUT Point-of-Load Module
184(1)
10.2.3 48 VIN -- 12 VOUT Buck Converter with Parallel GaN Transistors for High-Current Applications
185(6)
10.3 Isolated DC-DC Converters
191(13)
10.3.1 Hard-Switching Intermediate Bus Converters
192(11)
10.3.2 A 400 V LLC Resonant Converter
203(1)
10.4 Class-D Audio
204(4)
10.4.1 Total Harmonic Distortion (THD)
204(1)
10.4.2 Damping Factor (DF)
205(1)
10.4.3 Class-D Audio Amplifier Example
206(2)
10.5 Envelope Tracking
208(6)
10.5.1 High-Frequency GaN Transistors
209(2)
10.5.2 Envelope Tracking Experimental Results
211(1)
10.5.3 Gate Driver Limitations
211(3)
10.6 Highly Resonant Wireless Energy Transfer
214(10)
10.6.1 Design Considerations for Wireless Energy Transfer
216(1)
10.6.2 Wireless Energy Transfer Examples
217(7)
10.6.3 Summary of Design Considerations for Wireless Energy Transfer
224(1)
10.7 LiDAR and Pulsed Laser Applications
224(2)
10.8 Power Factor Correction (PFC)
226(1)
10.9 Motor Drive and Photovoltaic Inverters
227(1)
10.10 Summary
228(4)
References
228(4)
11 Replacing Silicon Power MOSFETs
232(7)
11.1 What Controls the Rate of Adoption?
232(1)
11.2 New Capabilities Enabled by GaN Transistors
232(1)
11.3 GaN Transistors are Easy to Use
233(1)
11.4 Cost vs. Time
234(1)
11.4.1 Starting Material
234(1)
11.4.2 Epitaxial Growth
234(1)
11.4.3 Wafer Fabrication
235(1)
11.4.4 Test and Assembly
235(1)
11.5 GaN Transistors are Reliable
235(1)
11.6 Future Directions
236(1)
11.7 Conclusion
237(2)
References
237(2)
Appendix 239(7)
Index 246
Alex Lidow is CEO of Efficient Power Conversion Corporation (EPC). Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects. Lidow earned his Bachelor of Science degree from Caltech in 1975 and his Ph.D. from Stanford in 1977.

Johan Strydom is Vice President, Applications at EPC Corporation. He received his Ph.D. from the Rand Afrikaans University, South Africa in 2001. From 1999 to 2002 he worked as a post-doctoral researcher at the Center for Power Electronics (CPES), Virginia Tech. Dr. Strydom held various application engineering positions at International Rectifier Corporation and Linear Technology Corporation, working on DC-DC converters, motor drives, and class-D audio.

Dr. Michael A. de Rooij is Executive Director of Applications Engineering at Efficient Power Conversion Corporation (EPC). Prior to joining EPC he worked at Windspire Energy where he helped develop the next generation of small vertical-axis wind turbine inverters. In addition, Dr. de Rooij has worked as a Senior Engineer at the GE Global Research Center. Dr. de Rooijs research interests and activities include, solid-state high-frequency power converters and devices, utility applications of power electronics, uninterruptible power supplies, integration of power electronic converters, power electronic packaging, induction heating, photovoltaic converters, Magnetic Resonance Imaging (MRI) Systems and gate drivers with protection features. Dr. de Rooij is a Senior Member of the IEEE. He received his Ph.D. from the Rand Afrikaans University (now called The University of Johannesburg), South Africa.

David Reusch is Director, Applications at EPC Corporation.  Dr. Reusch earned a doctorate in electrical engineering from Virginia Tech, where he also earned his bachelors and masters degrees.  While working on his Ph.D. he was a Bradley Fellow at the Center for Power Electronics Systems (CPES).  Dr. Reusch has first-hand experience designing with GaN transistors to meet the demands for lower loss and higher power density in power converters.  He is active in IEEE organizations and during the last several years has published papers at APEC and ECCE conferences.