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Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 1, Materials and Technology 2023 ed. [Kõva köide]

  • Formaat: Hardback, 586 pages, kõrgus x laius: 235x155 mm, kaal: 1057 g, 1 Illustrations, color; 299 Illustrations, black and white; XIII, 586 p. 300 illus., 1 illus. in color., 1 Hardback
  • Ilmumisaeg: 21-Apr-2023
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3031195302
  • ISBN-13: 9783031195303
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  • Formaat: Hardback, 586 pages, kõrgus x laius: 235x155 mm, kaal: 1057 g, 1 Illustrations, color; 299 Illustrations, black and white; XIII, 586 p. 300 illus., 1 illus. in color., 1 Hardback
  • Ilmumisaeg: 21-Apr-2023
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3031195302
  • ISBN-13: 9783031195303

Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The first volume "Materials and Technologies" of a three-volume set describes the physical, chemical and electronic properties of II-VI compounds, which give rise to an increased interest in these semiconductors. Technologies that are used in the development of various devices based on II-VI connections, such as material synthesis, deposition, characterization, processing, and device fabrication, are also discussed in detail in this volume. It covers also topics related to synthesis and application of II-VI-based nanoparticles and quantum dots, as well their toxicity, biocompatibility and biofunctionalization. 



Introduction in II-VI semiconductors.- (general view, history).-
Cd-based II-VI semiconductors.- (CdSe, CdS, CdTe, structure, optical
properties, luminescence, electrical conduction,
photoconductivity).- Zn-based II-VI semiconductors.- (ZnSe, ZndS,
ZnTe, structure, optical properties, luminescence, electrical conduction,
photoconductivity).- Hg-based II-VI semiconductors.- (HgTe; HgS;
HgSe, structure, elecrophysical propertie).- Ternary II-VI compounds.-
(CdZnTe, HgCdTe, HgZnTe).- Bandgap engineering.- Synthesis of II-VI
semiconductors.- (single crystals, polycrystals, wet chemical
synthesis, features, crystallite sizes, sintering),.- Thin films of II-VI
semiconductors.- (features, deposition, characterization).- Epitaxial growth
of II-VI semiconductors .-  (approaches, deposition, characterization).-
Doping of II-VI semiconductors.- (approaches, limitations, p-n junction
forming, characterization).- Schottky barriers and ohmic contacts to II-VI
semiconductors.-  (formation, approaches, parameters, limitations).-
Patterning of II-VI semiconductor films.- (etching: wet, dry).- Stability of
II-VI semiconductors.- (thermal, temporal, stabilization, surface
passivation).- Colloidal II-VI semiconductor-based nanoparticles.- (quantum
dots, synthesis, stabilization).- 1D II-VI semiconductor-based nanomaterials
.- (nanowires, nanobelts, etc. synthesis, characterization).- 2D II-VI
semiconductor-based nanomaterials .- (nanoflakes,
nanosheets, etc., synthesis, characterization).- 3D II-VI semiconductor-based
nanomaterials .- (core-shells, spherical, hierarchical structures,
etc., synthesis, characterization).- .- Introduction in IR detectors.-
(Classification, Infrared Detector Market, materials, HgCdTe, limitations,
applications).- Photoconductive and photovoltaic IR detectors .- (HgCdTe,
HgZnTe, high operation temperature (HOT) IR detectors, sensor design, p-n
junction, barrier photodetectors, characterization, performances,
application, advantage, disadvantages).- Avalanche photodiodes for IR
spectral region .- (HgCdTe, p-i-n, principles of operation, fabrication,
performances, application, advantage, disadvantages).- Photoelectromagnetic
(PEM) detectors, magnetoconcentration detectors, and Dember effect IR
detectors.- (design, characterization, performances, application, advantage,
disadvantages).- Quantum Cascade and Quantum well IR Detectors.- (HgCdTe,
design, fabrication, characterization, performance, application, advantage,
disadvantages).- IR detectors array.- (photoconductive array, photodiode
array, design, array technology, fabrication, performance, application).-
Nanomaterial-based IR detectors.- (HgTe, HgSe, QDs-based IR detectors,
nanocrystals, colloidal, 1D and 2D structures).- CdSe-based photodetectors
for visible-NIR spectral region.- (all types of detectors, including
nanomaterials (thin films, 1D, 2D, 3D, QDs, colloidal, nanocrystals), design,
fabrication, performance, application).- CdTe-based photodetectors for
visible-NIR spectral region.- (all types of detectors, including
nanomaterials (thin films, 1D, 2D, 3D, QDs, colloidal, nanocrystals), design,
fabrication, performance, application).- CdS-based photodetectors for
visible-UV spectral region.- (all types of detectors, including nanomaterials
(thin films, 1D, 2D, 3D, QDs, colloidal, nanocrystals), design, fabrication,
performance, application).- Photodetectors for visible spectral range based
on ternary and.- multinary alloys of II-VI semiconductors.- (ZnSTe, CdZnTe,
ZnSeTe, etc., design, fabrication, performance, application).- Introduction
in UV detectors.- (Principles of operation, materials used, classification,
applications).- Schottky barrier-based and heterojunction-based UV
detectors.- (ZnS, ZnSe, design, fabrication, characterization, performance,
application, advantage, disadvantages).- Avalanche UV photodiodes.- (ZnS,
ZnSe, p-i-n, design, fabrication, characterization, performance, application,
advantage, disadvantages).- Nanomaterial-based UV photodetectors.- (ZnS,
ZnSe, 1D, 2D, 3D, QDs, design, fabrication, characterization, performance,
advantage, disadvantages).
Doctor Hubilitate Ghenadii Korotcenkov is Chief Scientific Researcher, Moldova State University, Chisinau, Moldova. He has more than 50 years of research experience in the field of materials science and the development and research of various devices based on semiconductor materials. Until 1995 he studied Schottky barriers, MOS structures, native oxides, and various photoreceivers based on IIIVs compounds such as InP, GaP, AlGaAs, and InGaAs. His current research interests since 1995 include material sciences, focusing on metal oxide film deposition and characterization (In2O3, SnO2, ZnO, TiO2), surface science, thermoelectric conversion, and design of physical and chemical sensors, including thin film gas sensors. G. Korotcenkov is the author or editor of 45 books and special issues published by Momentum Press, CRC Press, Springer (USA), Harbin Institute of Technology Press (China), Trans Tech Publication (Switzerland) and EDP Sciences (France). Currently he is a series editor of Metal Oxides book series published by Elsevier. Since 2017, more than 35 volumes have been published within this series. G. Korotcenkov is the author and coauthor of more than 650 scientific publications, including 31 review papers, 38 book chapters, more than 200 peer-reviewed articles published in scientific journals (h-factor=42 (Web of Science), h=44 (Scopus) and h=59 (Google scholar citation), 2022). His scientific work has been recognized with numerous awards, including an Award of the Academy of Sciences of Moldova (2019), the Prize of the Presidents of the Ukrainian, Belarus, and Moldovan Academies of Sciences (2003) and others. G. Korotcenkov also received a fellowships from the International Research Exchange Board (IREX, United States, 1998), Brain Korea 21 Program (2008-2012), and BrainPool Program (Korea, 2007-2008 and 2015-2017).