A comprehensive look at the two most mature devices of a new generation of heterojunction transistors the high electron mobility transistor (HEMT) and the heterojunction bipolar transistor (HBT). Covers such fundamental issues as device physics, analytical modeling, materials, fabrication methods, and microwave and digital circuit applications. Discusses why HEMT and HBT technologies are expected to dominate future high-speed microwave circuit applications. Annotation copyright Book News, Inc. Portland, Or.
