Preface |
|
xix | |
Acknowledgements |
|
xxvi | |
|
|
xxix | |
Introduction |
|
xxxi | |
|
Heterostructure materials |
|
|
1 | (18) |
|
|
1 | (1) |
|
|
1 | (7) |
|
|
2 | (1) |
|
|
3 | (2) |
|
The materials game and bandgap engineering |
|
|
5 | (2) |
|
Limitations and applications of modern growth techniques |
|
|
7 | (1) |
|
Crystal and reciprocal lattices |
|
|
8 | (6) |
|
|
8 | (1) |
|
|
9 | (2) |
|
Application to band structures |
|
|
11 | (3) |
|
|
14 | (2) |
|
|
16 | (1) |
|
|
16 | (1) |
|
|
16 | (1) |
|
|
16 | (3) |
|
Semiclassical theory of heterostructures |
|
|
19 | (34) |
|
|
19 | (1) |
|
Spatially-varying semiconductors |
|
|
19 | (7) |
|
|
20 | (3) |
|
|
23 | (3) |
|
The Anderson band-diagram model |
|
|
26 | (3) |
|
The abrupt heterojunction case |
|
|
29 | (4) |
|
Drift-diffusion transport model for heterostructures |
|
|
33 | (3) |
|
I--V characteristics of p--n heterojunctions |
|
|
36 | (2) |
|
The thermionic model of heterojunctions |
|
|
38 | (4) |
|
|
42 | (2) |
|
|
44 | (2) |
|
|
46 | (1) |
|
Appendix: Semiconductor parameter tables |
|
|
46 | (1) |
|
|
46 | (3) |
|
|
46 | (2) |
|
|
48 | (1) |
|
|
49 | (4) |
|
Quantum theory of heterostructures |
|
|
53 | (44) |
|
|
53 | (1) |
|
Band structures, Bloch functions and Wannier functions |
|
|
54 | (14) |
|
|
54 | (1) |
|
Electron in a periodic potential |
|
|
55 | (3) |
|
|
58 | (6) |
|
Three-dimensional crystal |
|
|
64 | (4) |
|
|
68 | (11) |
|
Heterojunction case (tight-binding approximation) |
|
|
70 | (2) |
|
Definition of the electron particle current (flux) |
|
|
72 | (4) |
|
|
76 | (2) |
|
Three-dimensional effects |
|
|
78 | (1) |
|
Multi-band tridiagonal Wannier picture |
|
|
79 | (7) |
|
Multi-band tridiagonal Wannier system |
|
|
79 | (2) |
|
Effective-mass wave-matching for a two-band Wannier system |
|
|
81 | (3) |
|
Comparison with a full-band model |
|
|
84 | (2) |
|
Multi-band density of states |
|
|
86 | (5) |
|
|
91 | (1) |
|
|
92 | (1) |
|
|
92 | (1) |
|
|
92 | (1) |
|
|
93 | (4) |
|
Quantum heterostructure devices |
|
|
97 | (51) |
|
|
97 | (1) |
|
The accelerated band electron |
|
|
98 | (8) |
|
Stark states and the Wannier ladder |
|
|
98 | (4) |
|
Time-dependent solutions and the Houston state |
|
|
102 | (2) |
|
|
104 | (1) |
|
Coherent and squeezed Zener oscillations |
|
|
105 | (1) |
|
|
106 | (9) |
|
Rectangular quantum wells |
|
|
107 | (1) |
|
Quantum well induced by an electric field |
|
|
108 | (1) |
|
Quantum wells of arbitrary shapes |
|
|
109 | (1) |
|
Full-band structure effects |
|
|
110 | (1) |
|
|
110 | (5) |
|
|
115 | (14) |
|
|
115 | (4) |
|
Tunneling current and resonant tunneling |
|
|
119 | (2) |
|
Charge distribution inside the well |
|
|
121 | (3) |
|
|
124 | (1) |
|
Scattering induced broadening |
|
|
124 | (1) |
|
Full-band structure effects |
|
|
124 | (4) |
|
High-frequency and high-speed response |
|
|
128 | (1) |
|
Resonant interband tunneling diodes (RITDs) |
|
|
128 | (1) |
|
|
129 | (8) |
|
|
131 | (2) |
|
|
133 | (2) |
|
Quasi-crystals and Fibonacci superlattices |
|
|
135 | (2) |
|
|
137 | (1) |
|
|
138 | (3) |
|
|
138 | (1) |
|
|
138 | (3) |
|
|
141 | (7) |
|
Scattering processes in heterostructures |
|
|
148 | (29) |
|
|
148 | (1) |
|
Phonons and phonon scattering |
|
|
148 | (13) |
|
|
152 | (5) |
|
Spontaneous and stimulated emissions |
|
|
157 | (2) |
|
Semiclassical phonon model |
|
|
159 | (2) |
|
Polar scattering by optical phonons |
|
|
161 | (1) |
|
Deformation potential scattering by acoustic phonons |
|
|
162 | (3) |
|
Intervalley scattering by LO phonons |
|
|
165 | (1) |
|
Interface roughness scattering |
|
|
165 | (4) |
|
|
169 | (3) |
|
Electron-electron scattering |
|
|
172 | (2) |
|
|
174 | (1) |
|
|
175 | (1) |
|
|
175 | (1) |
|
|
175 | (1) |
|
|
176 | (1) |
|
Scattering-assisted tunneling |
|
|
177 | (44) |
|
|
177 | (1) |
|
Importance of three-dimensional scattering |
|
|
178 | (2) |
|
Scattering-assisted tunneling theory |
|
|
180 | (6) |
|
Semiclassical scattering picture |
|
|
180 | (1) |
|
Matrix elements for the heterostructure Hamiltonian |
|
|
181 | (1) |
|
Matrix elements for the interaction Hamiltonian |
|
|
181 | (2) |
|
Envelope equations for sequential scattering |
|
|
183 | (3) |
|
Transmission coefficient for scattering-assisted tunneling |
|
|
186 | (2) |
|
|
188 | (2) |
|
|
190 | (4) |
|
Scattering-parameter representation |
|
|
194 | (4) |
|
Detailed balance and Pauli exclusion in MSS |
|
|
198 | (6) |
|
Coupling functions for various scattering processes |
|
|
204 | (3) |
|
Results for resonant tunneling structures |
|
|
207 | (8) |
|
|
215 | (1) |
|
|
216 | (1) |
|
|
216 | (1) |
|
|
216 | (1) |
|
|
217 | (4) |
|
Frequency response of quantum devices from DC to infrared |
|
|
221 | (44) |
|
|
221 | (1) |
|
Analytic solution for a uniform time-dependent potential |
|
|
221 | (1) |
|
Radiation coupling with an external modulated electric field |
|
|
222 | (6) |
|
Time-dependent tunneling theory |
|
|
228 | (4) |
|
Small-signal response without self-consistent potential |
|
|
232 | (1) |
|
|
233 | (4) |
|
RTD conductances and capacitances |
|
|
237 | (4) |
|
High-frequency response of the RTD |
|
|
241 | (6) |
|
Microwave measurement of the C--V characteristics |
|
|
247 | (3) |
|
|
250 | (1) |
|
Infrared response of quantum devices |
|
|
251 | (11) |
|
Modeling the infrared wave-guide |
|
|
252 | (2) |
|
Coupling of quantum transport with infrared radiation |
|
|
254 | (2) |
|
Optical absorption/emission coefficient |
|
|
256 | (3) |
|
|
259 | (3) |
|
|
262 | (1) |
|
|
263 | (2) |
|
Charge control of the two-dimensional electron gas |
|
|
265 | (21) |
|
|
265 | (1) |
|
2DEG population as a function of the Fermi energy |
|
|
265 | (4) |
|
Equilibrium population of the 2DEG |
|
|
269 | (3) |
|
Charge control of the 2DEG with a Schottky junction |
|
|
272 | (4) |
|
C--V characteristics of the MODFET capacitor |
|
|
276 | (3) |
|
I--V modeling of the Schottky junction |
|
|
279 | (3) |
|
|
282 | (1) |
|
|
282 | (1) |
|
|
283 | (3) |
|
High electric field transport |
|
|
286 | (28) |
|
|
286 | (1) |
|
|
287 | (3) |
|
Electron transport in small electric fields |
|
|
290 | (4) |
|
Uniform semiconductor case |
|
|
290 | (2) |
|
Non-uniform semiconductor case |
|
|
292 | (2) |
|
Electron transport in a large electric field |
|
|
294 | (5) |
|
Uniform semiconductor case |
|
|
294 | (2) |
|
Non-uniform semiconductor case |
|
|
296 | (3) |
|
High-field transport: two-valley model |
|
|
299 | (4) |
|
Negative differential mobility and the Gunn effect |
|
|
303 | (5) |
|
Transient velocity overshoot in a time-varying field |
|
|
308 | (1) |
|
Stationary velocity overshoot in short devices |
|
|
309 | (1) |
|
|
310 | (1) |
|
|
310 | (2) |
|
|
310 | (1) |
|
|
310 | (2) |
|
|
312 | (2) |
|
|
314 | (28) |
|
|
314 | (2) |
|
Long- and short-channel MODFETs |
|
|
316 | (7) |
|
Saturation and two-dimensional effects in FETs |
|
|
323 | (14) |
|
The Grebene-Ghandhi model |
|
|
323 | (8) |
|
Channel opening: MOSFET saturation model |
|
|
331 | (6) |
|
|
337 | (1) |
|
|
338 | (1) |
|
|
338 | (1) |
|
|
338 | (1) |
|
|
338 | (1) |
|
|
339 | (3) |
|
Small-and large-signal AC models for the long-channel MODFET |
|
|
342 | (42) |
|
|
342 | (8) |
|
fT and fmax figures of merit |
|
|
342 | (2) |
|
|
344 | (2) |
|
Unilateral power gain of the wave-equation model |
|
|
346 | (1) |
|
On the ordering of fT and fmax |
|
|
347 | (3) |
|
The MOSFET wave-equation (long-channel case) |
|
|
350 | (15) |
|
The large-signal MOSFET wave-equation |
|
|
350 | (1) |
|
Exact small-signal solution of the MOSFET wave-equation |
|
|
351 | (5) |
|
Frequency power series expansions of the y parameters |
|
|
356 | (3) |
|
Dimensionless representation of the y parameters |
|
|
359 | (1) |
|
First order equivalent circuit I |
|
|
359 | (2) |
|
Range of validity of the RC small-signal equivalent circuit I |
|
|
361 | (2) |
|
Alternative equivalent circuits for the intrinsic MODFET/MOSFET |
|
|
363 | (2) |
|
Large-signal model of the long-channel MODFET/MOSFET |
|
|
365 | (11) |
|
|
373 | (1) |
|
Charge conservation in circuit simulators |
|
|
374 | (2) |
|
Parasitics, extrinsic MODFET and parameter extraction |
|
|
376 | (3) |
|
|
379 | (1) |
|
|
379 | (2) |
|
|
379 | (1) |
|
|
379 | (2) |
|
|
381 | (3) |
|
Small-and large-signal AC models for the short-channel MODFET |
|
|
384 | (28) |
|
|
384 | (1) |
|
Small-signal model for the short-channel MOSFET |
|
|
384 | (12) |
|
The velocity-saturated MOSFET wave-equation |
|
|
384 | (3) |
|
Exact solution of the velocity-saturated MOSFET wave-equation |
|
|
387 | (2) |
|
Equivalent circuit of the velocity-saturated MOSFET wave-equation |
|
|
389 | (4) |
|
High-frequency performance of the short-channel MODFET |
|
|
393 | (2) |
|
Alternate equivalent circuit for the short-channel MODFET |
|
|
395 | (1) |
|
Large-signal model for the short-channel MOSFET |
|
|
396 | (14) |
|
First-order non-quasi-static approximation |
|
|
397 | (3) |
|
Small-signal equivalent circuit for the D'' internal node |
|
|
400 | (3) |
|
|
403 | (4) |
|
Charge-based representation |
|
|
407 | (1) |
|
|
408 | (1) |
|
|
409 | (1) |
|
|
410 | (1) |
|
|
411 | (1) |
|
|
411 | (1) |
|
DC and microwave electrothermal modeling of FETs |
|
|
412 | (30) |
|
|
412 | (1) |
|
Modeling for power amplifier design |
|
|
413 | (1) |
|
Physical versus table-based models |
|
|
414 | (1) |
|
|
415 | (6) |
|
|
416 | (1) |
|
Pulsed I--V characteristics |
|
|
416 | (2) |
|
Isothermal I--V characteristics |
|
|
418 | (3) |
|
|
421 | (5) |
|
Microwave data acquisition |
|
|
421 | (1) |
|
|
421 | (1) |
|
|
422 | (4) |
|
|
426 | (7) |
|
|
426 | (2) |
|
|
428 | (2) |
|
|
430 | (1) |
|
Parasitic bipolar topologies |
|
|
431 | (2) |
|
|
433 | (1) |
|
|
433 | (3) |
|
|
436 | (3) |
|
Pulsed I--V characteristics |
|
|
436 | (1) |
|
|
437 | (2) |
|
|
439 | (1) |
|
|
439 | (2) |
|
|
441 | (1) |
|
Analytical DC analysis of short-gate MODFETs |
|
|
442 | (48) |
|
|
442 | (4) |
|
Background to the FET DC modeling approach |
|
|
446 | (2) |
|
Brief semiconductor materials history for SBGFETs |
|
|
448 | (1) |
|
2DEG gate charge control in a heavily dual pulse-doped MODFET structure |
|
|
449 | (9) |
|
An analytically manageable 2DEG transport model |
|
|
458 | (2) |
|
Quasi-two-dimensional model for electrostatics and I--V characteristics |
|
|
460 | (20) |
|
The low-field gradual channel |
|
|
461 | (3) |
|
Source, drain and contact resistances |
|
|
464 | (2) |
|
The high-field velocity-saturated region |
|
|
466 | (4) |
|
Impact ionization in the channel and gate tunneling |
|
|
470 | (3) |
|
Application examples and some large-signal issues |
|
|
473 | (7) |
|
|
480 | (2) |
|
|
482 | (1) |
|
|
482 | (7) |
|
|
489 | (1) |
|
Small-signal AC analysis of the short-gate velocity-saturated MODFET |
|
|
490 | (37) |
|
|
490 | (1) |
|
Equivalent circuit for the intrinsic device |
|
|
490 | (8) |
|
|
498 | (9) |
|
Conduction-induced currents and delays |
|
|
507 | (12) |
|
Y parameters and equivalent circuit for the extrinsic device |
|
|
519 | (5) |
|
|
524 | (1) |
|
|
524 | (1) |
|
|
525 | (2) |
|
Gate resistance and the Schottky-barrier interface |
|
|
527 | (40) |
|
|
527 | (1) |
|
Components in the input resistance |
|
|
528 | (2) |
|
Measurement and scaling of the gate resistance |
|
|
530 | (4) |
|
Interfacial gate resistance and Schottky barriers |
|
|
534 | (2) |
|
Admittance analysis of a Schottky barrier with semiconductor surface states |
|
|
536 | (4) |
|
Theory for the interfacial tunneling resistance |
|
|
540 | (10) |
|
General formalism for tunneling between metal and surface states |
|
|
541 | (4) |
|
Interfacial tunneling barrier |
|
|
545 | (1) |
|
Metal wave-function tail and tunneling effective mass |
|
|
546 | (2) |
|
Surface-state wave-function |
|
|
548 | (1) |
|
Tunneling resistance and capture cross-section |
|
|
549 | (1) |
|
Application to various Schottky-barrier models |
|
|
550 | (7) |
|
Summary and modifications to the equivalent circuit and Y-parameters |
|
|
557 | (5) |
|
|
562 | (1) |
|
|
562 | (3) |
|
|
565 | (2) |
|
MODFET high-frequency performance |
|
|
567 | (46) |
|
|
567 | (1) |
|
Some high-frequency measurement issues |
|
|
567 | (5) |
|
Recap of procedure and parameters for calculating MODFET Y parameters |
|
|
572 | (4) |
|
Current gain, optimum power gain and cut-off frequencies |
|
|
576 | (4) |
|
|
580 | (4) |
|
Noise, noise figure and associated gain |
|
|
584 | (16) |
|
The FET noise model by Pucel, Haus and Statz |
|
|
589 | (2) |
|
The Fukui equation and Pospieszalski's thermal model |
|
|
591 | (2) |
|
General formalism for noise figure and power gain |
|
|
593 | (2) |
|
Noise figure and associated gain of the MODFET |
|
|
595 | (5) |
|
Process and manufacturability issues |
|
|
600 | (6) |
|
|
606 | (1) |
|
|
607 | (1) |
|
|
607 | (4) |
|
|
611 | (2) |
|
Modeling high-performance HBTs |
|
|
613 | (38) |
|
|
613 | (1) |
|
Microscopic modeling of HBTs |
|
|
614 | (10) |
|
|
614 | (1) |
|
Direct solution of the BTE |
|
|
614 | (10) |
|
|
624 | (22) |
|
|
624 | (1) |
|
Compact models for the collector current |
|
|
624 | (8) |
|
|
632 | (9) |
|
|
641 | (2) |
|
Compact model for large-signal analysis |
|
|
643 | (3) |
|
|
646 | (1) |
|
|
647 | (2) |
|
|
649 | (2) |
|
Practical high-frequency HBTs |
|
|
651 | (28) |
|
|
651 | (1) |
|
Material choices for HBTs |
|
|
652 | (6) |
|
|
652 | (4) |
|
|
656 | (2) |
|
Processing techniques and device design |
|
|
658 | (1) |
|
|
658 | (1) |
|
III--V processing technology |
|
|
658 | (1) |
|
Further discussion of fT, fmax |
|
|
659 | (6) |
|
Origin and distribution of delay times |
|
|
659 | (2) |
|
Improvement of delay times |
|
|
661 | (4) |
|
III--V surfaces and the emitter base saddle-point |
|
|
665 | (1) |
|
|
666 | (4) |
|
|
670 | (4) |
|
|
670 | (1) |
|
The beryllium diffusion problem |
|
|
670 | (3) |
|
Beryllium diffusion solutions |
|
|
673 | (1) |
|
|
674 | (1) |
|
|
675 | (3) |
|
|
678 | (1) |
Index |
|
679 | |