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High-Speed Heterostructure Devices: From Device Concepts to Circuit Modeling [Pehme köide]

(Hewlett-Packard Laboratories, Palo Alto, California), (Ohio State University)
  • Formaat: Paperback / softback, 728 pages, kõrgus x laius x paksus: 245x170x40 mm, kaal: 1115 g, 40 Tables, unspecified; 220 Line drawings, unspecified
  • Ilmumisaeg: 13-Feb-2006
  • Kirjastus: Cambridge University Press
  • ISBN-10: 0521024234
  • ISBN-13: 9780521024235
Teised raamatud teemal:
  • Formaat: Paperback / softback, 728 pages, kõrgus x laius x paksus: 245x170x40 mm, kaal: 1115 g, 40 Tables, unspecified; 220 Line drawings, unspecified
  • Ilmumisaeg: 13-Feb-2006
  • Kirjastus: Cambridge University Press
  • ISBN-10: 0521024234
  • ISBN-13: 9780521024235
Teised raamatud teemal:
High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers. The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The authors also introduce the operating principles of other devices, including the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs. The book comes with a complete set of homework problems and a web link to MATLAB programs.

Semiconductor heterostructures are spearheading the drive toward smaller, faster and lower power devices. Developed out of a graduate course taught at Ohio State University, this is a timely and comprehensive te xt on heterostructures, covering the physics, modeling techniques and the latest devices including MODFETs, HBTs and RTDs. Numerous homework excercises and a web link to MATLAB examples are included. The book will also be of great interest to researchers and engineers, since much of the research material has been gathered together and presented in book form for the first time.

Arvustused

"...the book is clear and easy to use. The material is presented in an engaging manner and the reader is guided expertly through the territory of heterostructure devices. Apart from its intended use as a book for graduate students, it will be sought after by researchers and engineers, as it presents research material which is disseminated throughout the research literature and has never before been presented together in a book." Current Engineering Practice

Muu info

A timely and comprehensive text on silicon heterostructures, covering physics, modeling techniques and device applications.
Preface xix
Acknowledgements xxvi
List of abbreviations
xxix
Introduction xxxi
Heterostructure materials
1(18)
Introduction
1(1)
MBE technology
1(7)
Lattice-matched systems
2(1)
Pseudomorphic materials
3(2)
The materials game and bandgap engineering
5(2)
Limitations and applications of modern growth techniques
7(1)
Crystal and reciprocal lattices
8(6)
Crystals and lattices
8(1)
The reciprocal lattice
9(2)
Application to band structures
11(3)
Conclusion
14(2)
Bibliography
16(1)
Recommended reading
16(1)
References
16(1)
Problems
16(3)
Semiclassical theory of heterostructures
19(34)
Introduction
19(1)
Spatially-varying semiconductors
19(7)
Semiconductor alloys
20(3)
Modulation doping
23(3)
The Anderson band-diagram model
26(3)
The abrupt heterojunction case
29(4)
Drift-diffusion transport model for heterostructures
33(3)
I--V characteristics of p--n heterojunctions
36(2)
The thermionic model of heterojunctions
38(4)
Ballistic launching
42(2)
The HBT
44(2)
Conclusion
46(1)
Appendix: Semiconductor parameter tables
46(1)
Bibliography
46(3)
Recommended reading
46(2)
References
48(1)
Problems
49(4)
Quantum theory of heterostructures
53(44)
Introduction
53(1)
Band structures, Bloch functions and Wannier functions
54(14)
The Schrodinger equation
54(1)
Electron in a periodic potential
55(3)
Wannier functions
58(6)
Three-dimensional crystal
64(4)
Spatially-varying band
68(11)
Heterojunction case (tight-binding approximation)
70(2)
Definition of the electron particle current (flux)
72(4)
Matching theory
76(2)
Three-dimensional effects
78(1)
Multi-band tridiagonal Wannier picture
79(7)
Multi-band tridiagonal Wannier system
79(2)
Effective-mass wave-matching for a two-band Wannier system
81(3)
Comparison with a full-band model
84(2)
Multi-band density of states
86(5)
Conclusion
91(1)
Bibliography
92(1)
Recommended reading
92(1)
References
92(1)
Problems
93(4)
Quantum heterostructure devices
97(51)
Introduction
97(1)
The accelerated band electron
98(8)
Stark states and the Wannier ladder
98(4)
Time-dependent solutions and the Houston state
102(2)
The Bloch oscillator
104(1)
Coherent and squeezed Zener oscillations
105(1)
Quantum wells
106(9)
Rectangular quantum wells
107(1)
Quantum well induced by an electric field
108(1)
Quantum wells of arbitrary shapes
109(1)
Full-band structure effects
110(1)
2DEG
110(5)
Resonant tunneling
115(14)
Double-barrier system
115(4)
Tunneling current and resonant tunneling
119(2)
Charge distribution inside the well
121(3)
Exchange correlation
124(1)
Scattering induced broadening
124(1)
Full-band structure effects
124(4)
High-frequency and high-speed response
128(1)
Resonant interband tunneling diodes (RITDs)
128(1)
Superlattice
129(8)
Periodic superlattices
131(2)
Random superlattice
133(2)
Quasi-crystals and Fibonacci superlattices
135(2)
Conclusion
137(1)
Bibliography
138(3)
Recommended reading
138(1)
References
138(3)
Problems
141(7)
Scattering processes in heterostructures
148(29)
Introduction
148(1)
Phonons and phonon scattering
148(13)
Phonons
152(5)
Spontaneous and stimulated emissions
157(2)
Semiclassical phonon model
159(2)
Polar scattering by optical phonons
161(1)
Deformation potential scattering by acoustic phonons
162(3)
Intervalley scattering by LO phonons
165(1)
Interface roughness scattering
165(4)
Alloy scattering
169(3)
Electron-electron scattering
172(2)
Conclusion
174(1)
Bibliography
175(1)
Recommended reading
175(1)
References
175(1)
Problems
176(1)
Scattering-assisted tunneling
177(44)
Introduction
177(1)
Importance of three-dimensional scattering
178(2)
Scattering-assisted tunneling theory
180(6)
Semiclassical scattering picture
180(1)
Matrix elements for the heterostructure Hamiltonian
181(1)
Matrix elements for the interaction Hamiltonian
181(2)
Envelope equations for sequential scattering
183(3)
Transmission coefficient for scattering-assisted tunneling
186(2)
Self-energy
188(2)
The MSS algorithm
190(4)
Scattering-parameter representation
194(4)
Detailed balance and Pauli exclusion in MSS
198(6)
Coupling functions for various scattering processes
204(3)
Results for resonant tunneling structures
207(8)
Conclusion
215(1)
Bibliography
216(1)
Recommended reading
216(1)
References
216(1)
Problems
217(4)
Frequency response of quantum devices from DC to infrared
221(44)
Introduction
221(1)
Analytic solution for a uniform time-dependent potential
221(1)
Radiation coupling with an external modulated electric field
222(6)
Time-dependent tunneling theory
228(4)
Small-signal response without self-consistent potential
232(1)
Self-consistent solution
233(4)
RTD conductances and capacitances
237(4)
High-frequency response of the RTD
241(6)
Microwave measurement of the C--V characteristics
247(3)
DC bias instabilities
250(1)
Infrared response of quantum devices
251(11)
Modeling the infrared wave-guide
252(2)
Coupling of quantum transport with infrared radiation
254(2)
Optical absorption/emission coefficient
256(3)
Quantum cascade laser
259(3)
Conclusion
262(1)
Bibliography
263(2)
Charge control of the two-dimensional electron gas
265(21)
Introduction
265(1)
2DEG population as a function of the Fermi energy
265(4)
Equilibrium population of the 2DEG
269(3)
Charge control of the 2DEG with a Schottky junction
272(4)
C--V characteristics of the MODFET capacitor
276(3)
I--V modeling of the Schottky junction
279(3)
Conclusion
282(1)
Bibliography
282(1)
Problems
283(3)
High electric field transport
286(28)
Introduction
286(1)
The Boltzmann equation
287(3)
Electron transport in small electric fields
290(4)
Uniform semiconductor case
290(2)
Non-uniform semiconductor case
292(2)
Electron transport in a large electric field
294(5)
Uniform semiconductor case
294(2)
Non-uniform semiconductor case
296(3)
High-field transport: two-valley model
299(4)
Negative differential mobility and the Gunn effect
303(5)
Transient velocity overshoot in a time-varying field
308(1)
Stationary velocity overshoot in short devices
309(1)
Conclusion
310(1)
Bibliography
310(2)
Recommended reading
310(1)
References
310(2)
Problems
312(2)
I--V model of the MODFET
314(28)
Introduction
314(2)
Long- and short-channel MODFETs
316(7)
Saturation and two-dimensional effects in FETs
323(14)
The Grebene-Ghandhi model
323(8)
Channel opening: MOSFET saturation model
331(6)
The extrinsic MODFET
337(1)
Conclusion
338(1)
Bibliography
338(1)
Recommended reading
338(1)
References
338(1)
Problems
339(3)
Small-and large-signal AC models for the long-channel MODFET
342(42)
Introduction
342(8)
fT and fmax figures of merit
342(2)
MAG and MSG
344(2)
Unilateral power gain of the wave-equation model
346(1)
On the ordering of fT and fmax
347(3)
The MOSFET wave-equation (long-channel case)
350(15)
The large-signal MOSFET wave-equation
350(1)
Exact small-signal solution of the MOSFET wave-equation
351(5)
Frequency power series expansions of the y parameters
356(3)
Dimensionless representation of the y parameters
359(1)
First order equivalent circuit I
359(2)
Range of validity of the RC small-signal equivalent circuit I
361(2)
Alternative equivalent circuits for the intrinsic MODFET/MOSFET
363(2)
Large-signal model of the long-channel MODFET/MOSFET
365(11)
Charge conservation
373(1)
Charge conservation in circuit simulators
374(2)
Parasitics, extrinsic MODFET and parameter extraction
376(3)
Conclusion
379(1)
Bibliography
379(2)
Recommended reading
379(1)
References
379(2)
Problems
381(3)
Small-and large-signal AC models for the short-channel MODFET
384(28)
Introduction
384(1)
Small-signal model for the short-channel MOSFET
384(12)
The velocity-saturated MOSFET wave-equation
384(3)
Exact solution of the velocity-saturated MOSFET wave-equation
387(2)
Equivalent circuit of the velocity-saturated MOSFET wave-equation
389(4)
High-frequency performance of the short-channel MODFET
393(2)
Alternate equivalent circuit for the short-channel MODFET
395(1)
Large-signal model for the short-channel MOSFET
396(14)
First-order non-quasi-static approximation
397(3)
Small-signal equivalent circuit for the D'' internal node
400(3)
Large-signal model
403(4)
Charge-based representation
407(1)
Charge conservation
408(1)
Model topology
409(1)
Conclusion
410(1)
Bibliography
411(1)
Problems
411(1)
DC and microwave electrothermal modeling of FETs
412(30)
Introduction
412(1)
Modeling for power amplifier design
413(1)
Physical versus table-based models
414(1)
Device characterization
415(6)
DC I--V--T
416(1)
Pulsed I--V characteristics
416(2)
Isothermal I--V characteristics
418(3)
Small-signal modeling
421(5)
Microwave data acquisition
421(1)
Small-signal topology
421(1)
Parasitic deembedding
422(4)
Large-signal modeling
426(7)
Model formulation
426(2)
Tensor product B-splines
428(2)
I--V characteristics
430(1)
Parasitic bipolar topologies
431(2)
Charge
433(1)
Electrothermal modeling
433(3)
Circuit simulations
436(3)
Pulsed I--V characteristics
436(1)
Power amplifier
437(2)
Conclusion
439(1)
Bibliography
439(2)
Problems
441(1)
Analytical DC analysis of short-gate MODFETs
442(48)
Introduction
442(4)
Background to the FET DC modeling approach
446(2)
Brief semiconductor materials history for SBGFETs
448(1)
2DEG gate charge control in a heavily dual pulse-doped MODFET structure
449(9)
An analytically manageable 2DEG transport model
458(2)
Quasi-two-dimensional model for electrostatics and I--V characteristics
460(20)
The low-field gradual channel
461(3)
Source, drain and contact resistances
464(2)
The high-field velocity-saturated region
466(4)
Impact ionization in the channel and gate tunneling
470(3)
Application examples and some large-signal issues
473(7)
Reliability
480(2)
Conclusion
482(1)
Bibliography
482(7)
Problems
489(1)
Small-signal AC analysis of the short-gate velocity-saturated MODFET
490(37)
Introduction
490(1)
Equivalent circuit for the intrinsic device
490(8)
Displacement currents
498(9)
Conduction-induced currents and delays
507(12)
Y parameters and equivalent circuit for the extrinsic device
519(5)
Conclusion
524(1)
Bibliography
524(1)
Problems
525(2)
Gate resistance and the Schottky-barrier interface
527(40)
Introduction
527(1)
Components in the input resistance
528(2)
Measurement and scaling of the gate resistance
530(4)
Interfacial gate resistance and Schottky barriers
534(2)
Admittance analysis of a Schottky barrier with semiconductor surface states
536(4)
Theory for the interfacial tunneling resistance
540(10)
General formalism for tunneling between metal and surface states
541(4)
Interfacial tunneling barrier
545(1)
Metal wave-function tail and tunneling effective mass
546(2)
Surface-state wave-function
548(1)
Tunneling resistance and capture cross-section
549(1)
Application to various Schottky-barrier models
550(7)
Summary and modifications to the equivalent circuit and Y-parameters
557(5)
Conclusion
562(1)
Bibliography
562(3)
Problems
565(2)
MODFET high-frequency performance
567(46)
Introduction
567(1)
Some high-frequency measurement issues
567(5)
Recap of procedure and parameters for calculating MODFET Y parameters
572(4)
Current gain, optimum power gain and cut-off frequencies
576(4)
Optimization of fmax
580(4)
Noise, noise figure and associated gain
584(16)
The FET noise model by Pucel, Haus and Statz
589(2)
The Fukui equation and Pospieszalski's thermal model
591(2)
General formalism for noise figure and power gain
593(2)
Noise figure and associated gain of the MODFET
595(5)
Process and manufacturability issues
600(6)
Reverse modeling
606(1)
Conclusion
607(1)
Bibliography
607(4)
Problems
611(2)
Modeling high-performance HBTs
613(38)
Introduction
613(1)
Microscopic modeling of HBTs
614(10)
Introduction
614(1)
Direct solution of the BTE
614(10)
Compact modeling of HBTs
624(22)
Introduction
624(1)
Compact models for the collector current
624(8)
Compact models for fT
632(9)
Compact models for fmax
641(2)
Compact model for large-signal analysis
643(3)
Conclusion
646(1)
Bibliography
647(2)
Problems
649(2)
Practical high-frequency HBTs
651(28)
Introduction
651(1)
Material choices for HBTs
652(6)
History and evolution
652(4)
Growth techniques
656(2)
Processing techniques and device design
658(1)
Introduction
658(1)
III--V processing technology
658(1)
Further discussion of fT, fmax
659(6)
Origin and distribution of delay times
659(2)
Improvement of delay times
661(4)
III--V surfaces and the emitter base saddle-point
665(1)
Thermal considerations
666(4)
Reliability issues
670(4)
Introduction
670(1)
The beryllium diffusion problem
670(3)
Beryllium diffusion solutions
673(1)
Conclusion
674(1)
Bibliography
675(3)
Problems
678(1)
Index 679