SESSION A Monday, October 18, 1999 - 8:30 a.m. Plenary Session Robert Anholt Zachary Lemnios GaAs...The Technology of the Future, Future, Future 3(4) A. Podell The 1999 Outlook for GaAs IC Markets and Technology 7(8) G. Bechtel Withdrawn III-V Technologies: An Investors Perspective on the Market E.J. Lum AlGaN/GaN Microwave Power HEMTs 15(4) L.F. Eastman GaAs IC Technology in ATE Applications 19(10) A. Armstrong SESSION B Monday, October 18, 1999 - 2:30 p.m. Application Driven Device Technology Zachary Lemnios Mesfet Digital for Datacom and Telecom Application 29(4) I. Deyhimy Status and Roadmap of GaAs Technology in Georgia, Former Soviet Union 33(4) N. P. Khuchua Z.D. Chakhnakia L. V. Khvedelidze R.G. Melkadze Tbilisi Georgia A. B. Gerasimov A.P. Bibilashvili R. I. Chikovani T.D. Mkheidze G.I. Goderdzishvili Ramp-Up of First SiGe Circuits for Mobile Communications: Positioning of 37(4) B-U. H. Klepser W. Klein High-Speed, Low-Power Digital and Analog Circuits Implemented in IBM SiGe BiCMOS Technology 41(6) K. E. Fritz B. A. Randall G. J. Fokken W. L. Walters M. J. Lorsung A. D. Nielsen J. F. Prairie D. J. Post B. K. Gilbert SESSION C Monday, October 18, 1999 - 2:30 p.m. HBTs and Novel Materials Tim Henderson Chris Bozada Low Temperature (LT) Grown GaAs Buffer Layers for III-V Semiconductor Processes 47(4) T. R. Weatherford Wide-Bandgap-Semiconductor Wide-Bandwidth Wide-Temperature-Range Power Amplifiers 51(4) James C. M. Hwang L. T. Kehias J. A. Cook M. C. Calcatera S. T. Sheppard An On-Ledge Schottky Potentiometer for the Diagnosis of HBT Emitter Passivation 55(4) P. Ma L. Zhang M.F. Chang P. Zampardi Inclusion of Topside Metal Heat Spreading in the Determination of HBT Temperatures by Electrical and Geometrical Methods 59(4) B. Yeats InP/GaAs0.51Sb0.49/InP DHBTs with High fT and fMAX for Wireless Communications Applications 63(6) C.R. Bolognesi N. Matine M. W. Dvorak X.G. Xu S.P. Watkins SESSION D Tuesday, October 19, 1999 - 8:30 a.m. Advanced Power Amplifier Design Dave Osika Power Amplifier Modeling Issues and Advancement in Japan 69(4) S. Watanabe High Linearity K-Band InP HBT Power Amplifier MMIC with 62.8 PAE at 21 GHz 73(4) L. W. Yang K. W. Kobayashi D. C. Streit A. K. Oki H.C. Yen P.C. Grossman T. R. Block L. T. Tran A. Gutierrez-Aitken L. G. Callejo J. Macek S. Maas 8W C-Band MMIC Amplifier for Space Applications 77(4) L. Loval A. Darbandi H. Buret M. Soulard F. Michard A > 25 PAE 0.2 - 6 GHz Lumped Power Amplifier in a 18 GHz Mesfet Technolgy 81(6) K. Krishnamurthy M.J.W. Rodwell S. I. Long SESSION E Tuesday, October 19, 1999 - 8:30 a.m. Electro-Optic and Opto-Electronic Ics Tho Vu Bill Davenport Quantum Well Infrared Photodetectors 87(4) J.S. Ahearn M. Sundaram 3.3 V MSM-TIA for Gigabit Ethernet 91(4) A. Jayakumar M. Bustos D. Cheskis S. Pietrucha M. Bonelli S. Al-Kuran A 1.25 Gb/s GaAs OEIC for Gigabit Ethernet 95(4) C-C. Ku C-H. Lin M-H. Tsai J-T. Ting R-H. Yuang High-Gain Transimpedance Amplifier in InP-Based HBT Technology for the Receiver in 40 Gb/s Optical-Fiber TDM Links 99(6) J. Mullrich H-M. Rein E. Mullner J.F. Jensen B. Stanchina M. Kardos SESSION F Tuesday, October 19, 1999 - 10:30 a.m. Millimeter Wave Circuits and Front-End Devices David Dening Steve Consolazio Millimeter-Wave Monolithic GaAs IC Interconnect and Packaging Technology Trends in Japan 105(4) K. Ohata A Hightly Integrated MMIC Chipset For A 40 GHz MVDS Transceiver Subscriber Trminal 109(4) C. Dourlens A. M. Couturier R. Sevin P. Quentin A 180-GHz MMIC Sub-Harmonic Mixer Based on InGaAs/InA1As/InP HEMT Diodes 113(4) Y-. Kok H. Wang R. Lai M. Barsky M. Sholley B. Allen A V-Band Drain Injected/Resistive Dual-Mode Monolithic Mixer 117(6) T. Kashiwa T. Katoh T. Ishida T. Ishikawa T. Kashiwa Y. Nakayama SESSION G Tuesday, October 19, 1999 - 10:30 a.m. FET Power Amplifiers Bill Peatman Byong-Jong Moon A Single Supply Device Technology for Wireless Applications 123(4) E. Glass J. Huang M. Martinez O. Hartin W. Valentine M. LaBelle E. Lan E-PHEMT for Single Supply, No Drain Switch, and High Efficiency Cellular Telephone Power Amplifiers 127(4) Y. Tkachenko A. Klimashov C. Wei Y. Zhao D. Bartle Analysis of PAE 50 Highly Linear Characteristics of New Structure Transistor ``Self-Aligned Gate PHEMT for W-CDMA Application 131(4) T Sasaki Y. Takada Y. Tanabe T. Nitta Y. Kakiuchi M. Yoshimura K. Fujieda T. Suzuki H. Kayano M. Hirose Y. Kitaura A Fast, Scaleable FET Model that Accounts for Propagation Effects 135(6) S M. Lardizabal R.E. Leoni III R. Mallavarpu D. Teeter M. Snow SESSION H Tuesday, October 19, 1999 - 1:30 p.m. Millimeter Wave Power Amplifiers Doug Teeter Kevin Kobayashi A Compact, 40 GHz 0.5W Power Amplifier MMIC 141(4) C. F. Campbell S.A. Brown High Efficiency Monolithic InP HEMT V-Band Power Amplifier 145(4) S. M. J. Liu O. S. A. Tang W. Kong K. Nichols J. Heaton P. C. Chao Sanders A Single Chip 1-W InP HEMT MMIC V-Band Module 149(4) Y.C. Chen D. L. Ingram D. Yamauchi B. Brunner J. Kraus M. Barsky R. Grundbacher S. K. Cha R. Lai T. Block M. Wojtowicz T.P. Chin B. Allen H. C. Yen D.C. Streit A CW 4 Watt KA-Band Power Amplifier Utilizing MMIC Multi-Chip Technology 153(6) K. matsunaga I. Miura N. Iwata SESSION I Tuesday, October 19, 1999 - 1:30 p.m. Device/Process Optimization & Hot Electron Effects Brad Krongard Kenneth Russell Novel Low-Cost Process for 0.1 μm T-Shaped Gate of InGaP/InGaAs Pseudomorphic HEMT 159(4) M. Sugiura K. Morizuka Suppression of Electrochemical Etching Effects in GaAs PHEMTs 163(4) Y. Zhao Y. Tkachenko D. Bartle Analysis of Surface-Related Kink Phenomena of GaAs MESFETs 167(4) K. Horio A. Wakabayashi Bias Point Dependence of the Hot Electron Degradation of AlGaAs/GaAs Power HFETs 171(10) D. Dieci M. Messori C. Canali R. Menozzi G. Sozzi C.Lanzieri SESSION J Wednesday, October 20, 1999 - 8:30 a.m. High Speed InP HBT Ics Mehran Mokhtari Marko Sokolich Implementation of Digital Circuits in an InP Scaled HBT Technology 181(4) B. A. Randall D. J. Schwab W. L. Walters A. D. Nielsen E. L. H. Amundsen B. K. Gilbert M. M. Sokolich Y. K. Brown M. M. Lui J. A. Henige 40 Gbit/s Optical Communications: InP DHBT Technology, Circuits and System Experiments 185(4) J. Godin P. Andre JL Benchimol P. Berdaguer S. Blayac JR Burie P. Desrousseaux AM Duchenois N. Kauffmann A. Konczykowska M. Riet High-Speed Multiplexers: A 50Gb/s 4:1 MUX in InP HBT Technology 189(4) J. P. Mattia R. Pullela G. Georgieu Y. Baeyens H. S. Tsai Y. K. Chen C. Dorschky T. Winkler Von Mohrenfels M. Reinhold C. Groepper M. Sokolich L. Nguyen W. Stanchina InP DHBT 68 GHz Static Frequency Divider 193(6) B. Tang J. Notthoff A. Gutierrez-Aitken E. Kaneshiro P. Chin A. Oki SESSION K Wednesday, October 20, 1999 - 8:30 a.m. Frequency Converter and Transceiver MMICs Mohammad Madihian Norman Chiang A GaAs +3V Low Noise Integrated Downconverter for C-Band Applications 199(4) C. Trantanella P. Blount M. Shifrin Fully-Integrated 5.2 GHz GaAs MESFET Transmitter MMIC for High Capacity Wireless Local Area Network Applications 203(4) J.S. Weiner Huan-Shang Tsai Young-Kai Chen E. Busking T. Tieman J. Kruys A 77 GHz GaAs pHEMT Transceive MMIC for Automotive Sensor Applications 207(14) A. Tessmann L. Verweyen M. Neumann H. Massler W.H. Haydl A. Hulsmann M. Schlechtweg 77GHz Fully-MMIC Automotive Forward-Looking Radar 221 H. Kondoh K. Sekine S. Takatani K. Takano K. Kuroda R. Dabkowski SESSION L Wednesday, October 20, 1999 - 10:20 a.m. Metamorphic HEMTs for Low Noise & High Power Millimeter Wave Applications Young-Kai Chen Jan-Erik Mueller Status of Metamorphic InxAl1-xAs/InxGa1-xAs HEMTs 217(4) A. Cappy Y. Cordier S. Bollaert M. Zaknoune Millimeter-Wave Low Noise Metamorphic HEMT Amplifiers and Devices on GaAs Substrates 221(4) P.F. Marsh S. Kang R. Wohlert P.M. McIntosh W.E. Hoke R.A. McTaggart S.M. Lardizabal R.E. Leoni III C.S. Whelan P.J. Lemonias T.E. Kazior High Power and Gain at 35 GHz Utilizing an InAlGaAs/In0.32Ga0.68As Metamorphic HEMT 225(8) C.S. Whelan W.E. Hoke R.A. McTaggart P.S. Lyman P.F. Marsh S.J. Lichwala T.E. Kazior SESSION M Wednesday, October 20, 1999 - 1:00 p.m. Millimeter Wave Sources, Dividers, & Multipliers Mitchell Shifrin Brad Nelson 94/47 GHz Regenerative Frequency Divider MMIC with Low Conversion Loss 233(4) S. Kudszus W.H. Haydl M. Neumann A. Hulsmann 104 and 134 GHz InGaP/InGaAs HBT Oscillators 237(4) K. Uchida I. Aoki H. Matsuura T. Yakihara S. Kobayashi S. Oka T. Fujita A. Miura Performance Optimization of a Fundamental Millimeterwave VCO 241(4) D. Whitefield R. Khanna Withdrawn A 2.4W W-Band Solid-State MMIC High Power Module D. L. Ingram P. P. Huang B. Brunner I. Stones D. Yamauchi Y. C. Chen M. Biedenbender J. Elloitt R. Lai D. C. Streit K. F. Lau H. C. Yen Injection-Locked Oscillator as Frequency Multiplier for Millimeter-Wave Applications 245(6) T. L. Nguyen SESSION N Wednesday, October 20, 1999 - 3:10 p.m. Novel Control Circuits and Devices George Studtmann Mitchell Shifrin Bi-Directional Amplifiers for Half-Duplex Transceivers 251(4) J.W. Archer O. Sevimli R. A. Batchelor A Miniaturized MMIC Analog Phase Shifter Using Two Quarter-Wave-Length Transmission Lines 255(4) H. Hayashi M. Muraguchi Multi-Throw Plastic MMIC Switches up to 6 GHz with Integrated Positive Control Logic 259(4) J. Smuk M. Mahfoudi D. Belliveau M. Shifrin A Lateral P-SI-N Diode SPDT Switch for Ka-Band Applications 263(10) M. Tanabe J. S. Iwanaga M. Ishii K. Miyatsuji Y. Ota D. Ueda SESSION O Wednesday, October 20, 1999 - 3:10 p.m. Mixed Signal and Digital ICs John Sitch Steve Long Withdrawn Monolithic 64QAM GaAs HBT Modulator R. Desrosiers C. Hornbuckle E. Mrozek J. Lanphar K. Kobayashi A. Oki B. Pointer A High Sensitivity 10Gb/s DCFL Limiting Amplifier with 0.2 μm GaAs MESFETs 273(4) H. Yamada H. Murayama K. Shiiba T. Ichioka T. Kimura High Resolution Track and Hold for Broadband Wireless Applications 277(4) S. Shah S. McGarry J. Sitch A 3.3V, 21Gb/s, PRBS Generator in AlGaAs/GaAs HBT Technology 281(6) M.G. Chen J. K. Notthoff SESSION P Wednesday, October 20, 1999 - 10:20 a.m. Late News Papers TBD A 10 Gb/s Optical Transmitter Module with a Built_in Modulator Driver IC and a Receiver Module with a Built-In Preamplifier IC 287(4) N. Yoshida M. Ishizaka I. Watanabe M. Morie M. Fujii S. Wada K. Numata K. Fukuchi K. Fukushima J. Shimizu M. Yamaguchi T. Maeda Tunable Linearity Characteristics of a DC-3 GHz InP HBT Active Feedback Amplifier 291(4) K. W. Kobayashi A. Gutierrez-Aitken P. C. Grossman L. Yang E. Kaneshiro T.R. Block A.K. Oki D.C. Streit 57 Efficiency, Wide Dynamic Range Linearized Heterojunction FET-Based Power Amplifier for Wide-Band CDMA Handsets 295(4) G. Hau T.B. Nishimura N. Iwata An 800 MHz HBT Class-E Amplifier with 74 PAE at 3.0 Volts for GMSK 299 G.K. Wong S.I. Long
