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III-Nitride Semiconductors: Optical Properties [Kõva köide]

  • Formaat: Hardback, 464 pages, kõrgus x laius: 229x152 mm, kaal: 702 g, 375 Illustrations, color
  • Ilmumisaeg: 28-Jun-2002
  • Kirjastus: CRC Press Inc
  • ISBN-10: 1560329726
  • ISBN-13: 9781560329725
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  • Formaat: Hardback, 464 pages, kõrgus x laius: 229x152 mm, kaal: 702 g, 375 Illustrations, color
  • Ilmumisaeg: 28-Jun-2002
  • Kirjastus: CRC Press Inc
  • ISBN-10: 1560329726
  • ISBN-13: 9781560329725
International researchers in nitride materials and device technology provide an introduction for newcomers to the field and a reference for experienced researchers in this first of a two-part volume discussing the fundamental optical properties of III-nitride semiconductors. Recent advances in this field have led to intense interest in electronic and optoelectronic applications. Nine contributions report on time-resolved studies of semiconductors and discuss the defects and structural properties of GaN and related compounds. Annotation (c) Book News, Inc., Portland, OR (booknews.com)

Arvustused

""This essential book...is the first to present a systematic, comprehensive overview of the optical properties of III-nitride semiconductors..." "The style of writing is engagin, which makes the book easily accessible to anyone involved in the development of optoelectronic devices, optical spectroscopy or new materials research." -Mircea Dragoman, National Research Institute in Microtechnology, Bucharest, Romania.." Book Reviews Optics & Photonics News, June 2004

About the Series vii
Preface vii
Introduction
1(8)
M.O. Manasreh
H.X. Jiang
Time-Resolved Photoluminescence Studies of III-Nitrides
9(76)
H.X. Jiang
J.Y. Lin
W.W. Chow
Time-Resolved Raman Studies of Wide Bandgap Wurtzite GaN
85(50)
K.T. Tsen
Optical Properties of InGaN-Based III-Nitride Heterostructures
135(62)
Y.-H. Cho
J.-J. Song
Optical Properties of Homoepitaxial GaN
197(52)
R. Stepniewski
A. Wysmolek
K.P. Korona
J.M. Baranowski
Physics and Optical Properties of GaN-AlGaN Quantum Wells
249(34)
P. Lefebvre
B. Gil
J. Massies
N. Grandjean
M. Leroux
P. Bigenwald
H. Morkoc
Characterization of GaN and Related Nitrides by Raman Scattering
283(50)
H. Harima
Raman Studies of Wurtzite GaN and Related Compounds
333(46)
J. Frandon
F. Demangeot
M.A. Renucci
Light Emission from Rare Earth-Doped GaN
379(32)
J.M. Zavada
U. Hommerich
A.J. Steckl
Index 411


Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas. Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Propertiesof Semiconductors and Superlattices.