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III-Nitrides Light Emitting Diodes: Technology and Applications 2020 ed. [Kõva köide]

  • Formaat: Hardback, 285 pages, kõrgus x laius: 235x155 mm, kaal: 629 g, 86 Illustrations, color; 47 Illustrations, black and white; XIX, 285 p. 133 illus., 86 illus. in color., 1 Hardback
  • Sari: Springer Series in Materials Science 306
  • Ilmumisaeg: 01-Sep-2020
  • Kirjastus: Springer Verlag, Singapore
  • ISBN-10: 9811579482
  • ISBN-13: 9789811579486
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  • Formaat: Hardback, 285 pages, kõrgus x laius: 235x155 mm, kaal: 629 g, 86 Illustrations, color; 47 Illustrations, black and white; XIX, 285 p. 133 illus., 86 illus. in color., 1 Hardback
  • Sari: Springer Series in Materials Science 306
  • Ilmumisaeg: 01-Sep-2020
  • Kirjastus: Springer Verlag, Singapore
  • ISBN-10: 9811579482
  • ISBN-13: 9789811579486

The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book. 

Introduction.- Basic concept of light-emitting diodes.- Property and
testing analysis of III-nitrides based light-emitting diodes.- Epitaxy growth
of III-nitrides based light-emitting diodes.- Green and blue light-emitting
diodes based on InGaN/GaN MQWs structure.- UV light-emitting diodes based on
AlGaN MQWs structure.- Quantum efficiency promotion of III-nitrides based
light-emitting diodes.- Chip process of III-nitrides based light-emitting
diodes.- Packaging of III-nitrides based light-emitting diodes.- Reliability
analysis of III-nitrides based light-emitting diodes.- Application of
light-emitting diodes.- Novel technology of III-nitrides based light-emitting
diodes.

 
Jinmin Li is a professor at the Institute of Semiconductors (IOS), Chinese Academy of Sciences (CAS). He received his bachelors degree from Xi'an Jiaotong University in 1982 and Ph.D. from Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences in 1991. He became a professor at IOS, CAS in 1995 and was the director there from 20032012. He has been the director of the Solid State Lighting R&D Center of the Chinese Academy of Sciences since 2006 and director of the State Key Laboratory for Solid State Lighting since 2012. He has published more than 300 articles in peer-reviewed journals and proceedings.