Reviews the basic physics and technologies that underlie Indium phosphide (InP)-based material and devices as well as their applications in the fields of optoelectronics and of microwave and millimeter-wave electronics. Each of the 14 chapters describes a particular aspect of the technology to give scientists and engineers the necessary information to design, apply, and troubleshoot the high- performance, low-cost components for diverse systems, such as TDM and WDM optical systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technolgy are also examined. Topics include growth of high-purity bulk and heterostructure epitaxy, hetero-interface control and dry process techniques, and lasers, amplifiers and modulators. Annotation c. by Book News, Inc., Portland, Or.
A comprehensive guide to current techniques, applications, and trends in InP-based technologies.
Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include:
* Basic materials physics involved in a wide range of InP-based compounds.
* Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE.
* Hetero-interface control and dry process techniques for device fabrication.
* High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications.
* Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks.
* Optoelectronic integration and packing for functional, low-cost modules.
