This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.
1. Overview (T. Itoh).
2. Film Growth by Ion Beam and Plasma Discharge
Sputtering Methods (R.H. Cornely).
3. Preparation and Characterization of
II-VI Semiconductor Films by Sputtering (T. Taguchi, A. Hiraki).
4.
Sputtering Yield (Y. Yamamura, N. Itoh).
5. Low-Energy Ion/Surface
Interactions During Film Growth from the Vapor Phase (J.E. Greene, S.A.
Barnett, J.-E. Sundgren and A. Rockett).
6. Ion Beam Mixing (B.M. Paine, B.X.
Liu). 7A. Partially Ionized Molecular Beam Epitaxy (T. Itoh, H. Takai). 7B.
Ionized Cluster Beam Deposition (T. Takagi, I. Yamada).
8. Direct Ion Beam
Deposition (K. Miyake, T. Tokuyama).
9. Film Growth by Utilizing Ionized
Carbon Beam (S. Gonda).
10. Molecular Beam Epitaxy of III-V Compound
Semiconductors Using Mass Separated Low Energy Ion Beam (Y. Makita, S.
Shimizu).
11. Ion Beam Synthesis of Films (I.H. Wilson, P.L.F. Hemment, K.G.
Stephens). Subject Index.
