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Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [Kõva köide]

Edited by (RMIT University, Victoria, Australia)
  • Formaat: Hardback, 356 pages, kõrgus x laius: 254x178 mm, kaal: 802 g, 26 Tables, black and white; 172 Line drawings, black and white; 21 Halftones, black and white
  • Sari: Devices, Circuits, and Systems
  • Ilmumisaeg: 31-Jul-2018
  • Kirjastus: CRC Press
  • ISBN-10: 1138587982
  • ISBN-13: 9781138587984
Teised raamatud teemal:
Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and SensingSuurem pilt
  • Formaat: Hardback, 356 pages, kõrgus x laius: 254x178 mm, kaal: 802 g, 26 Tables, black and white; 172 Line drawings, black and white; 21 Halftones, black and white
  • Sari: Devices, Circuits, and Systems
  • Ilmumisaeg: 31-Jul-2018
  • Kirjastus: CRC Press
  • ISBN-10: 1138587982
  • ISBN-13: 9781138587984
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9781138587984.html
Märksõnad:
The book addresses the need to investigate new approaches to lower energy requirement in multiple application areas and serves as a guide into emerging circuit technologies. It explores revolutionary device concepts, sensors, and associated circuits and architectures that will greatly extend the practical engineering limits of energy-efficient computation. The book responds to the need to develop disruptive new system architectures and semiconductor processes aimed at achieving the highest level of computational energy efficiency for general purpose computing systems.











Discusses unique technologies and material only available in specialized journal and conferences.





Covers emerging materials and device structures, such as ultra-low power technologies, nanoelectronics, and microsystem manufacturing.





Explores semiconductor processing and manufacturing, device design, and performance.





Contains practical applications in the engineering field, as well as graduate studies.





Written by international experts from both academia and industry.
Preface vii
Series Editor ix
Editor xi
Contributors xiii
1 ASAP7: A finFET-Based Framework for Academic VLSI Design at the 7nm Node 1(44)
Vinay Vashishtha
Lawrence T. Clark
1.1 Introduction
2(1)
1.1.1
Chapter Outline
3(1)
1.2 ASAP? Electrical Performance
3(1)
1.3 Lithography Considerations
4(12)
1.3.1 Lithography Metrics and Other Considerations for Design Rule Determination
5(2)
1.3.1.1 Critical Dimension Uniformity (CDU)
5(1)
1.3.1.2 Overlay
6(1)
1.3.1.3 Mask Error Enhancement Factor (MEEF) and Edge Placement Error (EPE)
6(1)
1.3.1.4 Time-Dependent Dielectric Breakdown (TDDB)
6(1)
1.3.2 Single Exposure Optical Immersion Lithography
7(1)
1.3.3 Multi-Patterning Approaches
7(5)
1.3.3.1 Litho-Etchx (LEx)
8(1)
1.3.3.2 Self-Aligned Multiple Patterning
9(1)
1.3.3.3 Multiple Patterning Approach Comparison
9(3)
1.3.4 Extreme Ultraviolet Lithography (EUVL)
12(3)
1.3.4.1 EUVL Necessity
12(1)
1.3.4.2 EUVL Description and Challenges
13(1)
1.3.4.3 EUVL Advantages
14(1)
1.3.5 Patterning Cliffs
15(1)
1.3.6 DTCO
15(1)
1.4 FEOL and MOL Layers
16(2)
1.5 BEOL Layers
18(4)
1.5.1 SAV and Barrier Layer
19(1)
1.5.2 EUV Lithography Assumptions and Design Rules
20(1)
1.5.3 MP Optical Lithography Assumptions and Design Rules
21(1)
1.5.3.1 Patterning Choice
21(1)
1.5.3.2 SADP Design Rules and Derivations
21(1)
1.6 Cell Library Architecture
22(7)
1.6.1 Gear Ratio and Cell Height
22(2)
1.6.2 Fin Cut Implications
24(1)
1.6.3 Standard Cell MOL Usage
25(1)
1.6.4 Standard Cell Pin and Signal Routing
25(3)
1.6.5 Library Collaterals
28(1)
1.6.6 DTCO-Driven DR Changes Based on APR Results
28(1)
1.7 Automated Place and Route with ASAP7
29(3)
1.7.1 Power Routing and Self-Aligned Via (SAV)
29(1)
1.7.2 Scaled LEF and QRC TechFile
30(1)
1.7.3 Design Experiments and Results
31(1)
1.8 SRAM Design
32(8)
1.8.1 FinFET Implications and Fin Patterning
33(1)
1.8.2 Statistical Analysis
34(1)
1.8.3 SRAM Cell Design and DTCO Considerations
35(3)
1.8.3.1 MOL Patterning
35(1)
1.8.3.2 1-D Cell Metallization
36(1)
1.8.3.3 Stability and Yield Analysis
37(1)
1.8.4 Array Organization and Column Design
38(2)
1.8.5 Write Assist
40(1)
1.9
Chapter Summary
40(1)
References
41(4)
2 When the Physical Disorder of CMOS Meets Machine Learning 45(24)
Xiaolin Xu
Shuo Li
Raghavan Kumar
Wayne Burleson
2.1 Sources of CMOS Process Variations
47(1)
2.1.1 Fabrication Variations
47(1)
2.1.1.1 Systematic Variations
47(1)
2.1.1.2 Random Variations
47(1)
2.1.2 Environmental Variations and Aging
47(1)
2.2 Terminologies and Performance Metrics of PUF
47(2)
2.2.1 Challenge-Response Pairs (CRPs)
48(1)
2.2.2 Performance Metrics
48(1)
2.2.2.1 Uniqueness
48(1)
2.2.2.2 Reliability
48(1)
2.2.2.3 Unpredictability
49(1)
2.3 CMOS PUFs
49(2)
2.3.1 Arbiter PUF
49(1)
2.3.2 SRAM PUF
50(1)
2.3.3 DRV PUF
51(1)
2.4 Machine Learning Modeling Attacks on PUFs
51(1)
2.4.1 Modeling Attacks on Arbiter PUFs
52(1)
2.4.2 Attacks against SRAM PUFs
52(1)
2.5 Constructively Applying Machine Learning on PUFs
52(9)
2.5.1 Using Machine Learning to Improve the Reliability of Arbiter PUFs
53(5)
2.5.1.1 Mechanism of Arbiter PUFs
53(1)
2.5.1.2 Modeling the TA - TB of Arbiter PUFs
54(2)
2.5.1.3 Improving PUF Reliability with PUF Model
56(2)
2.5.2 Using Machine Learning to Model the Data Retention Voltage of SRAMs
58(2)
2.5.2.1 Predicting DRV using Artificial Neural Networks
59(1)
2.5.3 Performance of DRV Model
60(1)
2.6 Using Machine Learning to Mitigate the Impact of Physical Disorder on TDC
61(3)
2.6.1 Background of TDC
61(1)
2.6.2 Mitigate the Process Variations by Reconfiguring the Delay Elements
62(1)
2.6.3 Delay Chain Reconfiguration with Machine Learning
63(22)
2.6.3.1 Performance of Configurable Compact Algorithmic TDC
64(1)
2.7 Conclusion
64(1)
References
65(4)
3 Design of Alkali-Metal-Based Half-Heusler Alloys Having Maximum Magnetic Moments from First Principles 69(10)
Lin H. Yang
R.L. Zhang
Y.J. Zeng
C.Y. Fong
3.1 Introduction
69(2)
3.2 Guiding Principles of Designing the Half-Heusler Alloys
71(3)
3.3 Method of Calculation
74(1)
3.4 Results and Discussion
74(2)
3.5 Summary
76(1)
Acknowledgments
76(1)
References
77(2)
4 Defect-Induced Magnetism in Fullerenes and MoS2 79(16)
Sinu Mathew
Taw Kuei Chan
Bhupendra Nath Dev
John T.L. Thong
Mark B.H. Breese
T. Venkatesan
4.1 Magnetism in Allotropes of Carbon
79(1)
4.2 Soft Ferromagnetism in C60 Thin Films
80(5)
4.3 Magnetism in MoS2
85(6)
4.3.1 Introduction
85(1)
4.3.2 Ferrimagnetism in MoS2
85(6)
4.4 Conclusions
91(1)
Acknowledgments
91(1)
References
91(4)
5 Hot Electron Transistors with Graphene Base for THz Electronics 95(22)
Filippo Giannazzo
Giuseppe Greco
Fabrizio Roccaforte
Roy Dagher
Adrien Michon
Yvon Cordier
5.1 Introduction
95(1)
5.2 Hot Electron Transistor (HET): Device Concept and Operating Principles
96(4)
5.3 HET Implementations: Historical Perspective
100(3)
5.3.1 Metal Base HETs
100(1)
5.3.2 HETs Based on Semiconductor Heterostructures
101(2)
5.4 HETs with a Graphene Base
103(8)
5.4.1 Theoretical Properties
103(2)
5.4.2 GBHETs Implementation
105(4)
5.4.3 Open Challenges for the Fabrication of GBHETs
109(2)
5.5 Summary
111(1)
Acknowledgments
111(1)
References
112(5)
6 Tailoring Two-Dimensional Semiconductor Oxides by Atomic Layer Deposition 117(40)
Mohammad Karbalaei Akbari
Serge Zhuiykov
6.1 Introduction
117(2)
6.2 Interfacial and Structural Concepts in Deposited 2D Oxides
119(4)
6.2.1 Substrate Effects
119(3)
6.2.2 Structural Concepts
122(1)
6.3 Atomic Layer Deposition of 2D Nanostructures
123(11)
6.3.1 ALD Window
124(2)
6.3.2 ALD Precursors
126(1)
6.3.3 Case Study: ALD of 2D WO3
127(3)
6.3.4 Case Study: ALD of 2D TiO2
130(3)
6.3.5 Case Study: ALD of 2D Aluminum Oxide
133(1)
6.4 The Properties and Applications of ALD 2D Oxide Film
134(12)
6.4.1 The Catalytic Applications
135(3)
6.4.2 The Photovoltaic Applications
138(3)
6.4.3 Supercapacitance Performance of 2D Oxide Semiconductors
141(4)
6.4.4 Electrochemical Sensors Based on 2D Oxide Semiconductors
145(1)
6.5 Summary
146(1)
References
147(10)
7 Tunneling Field-Effect Transistors Based on Two-Dimensional Materials 157(24)
Peng Zhou
7.1 Introduction
157(1)
7.2 The Principle of TFET
158(3)
7.3 Performance Optimization
161(1)
7.4 Feasibility of TFETs Based on 2D Materials
162(5)
7.5 Current Status of TFETs Based on 2D Materials
167(6)
7.6 Conclusion
173(1)
References
173(8)
8 Surface Functionalization of Silicon Carbide Quantum Dots 181(20)
Marzaini Rashid
Ben R. Horrocks
Noel Healy
Jonathan P. Goss
Hua-Khee Chan
Alton B. Horsfall
8.1 The Dual-Feature and Below Bandgap Photoluminescence Spectra in SiC Nanostructures
182(1)
8.2 DFT Study on the Optoelectronic Properties of OH-, F- and H-Terminated 4H-SiC Quantum Dots
183(14)
8.2.1 Computational Method
184(1)
8.2.2 Results
184(42)
8.2.2.1 Optical Properties of 10 A Diameter 4H-SiC-QD Structures
184(3)
8.2.2.2 Effect of Surface Composition and Surface Reconstruction
187(2)
8.2.2.3 Effect of Surface Termination Groups on Optical Absorption
189(1)
8.2.2.4 Effect of Surface Termination on Density of States, HOMO/LUMO Wave Functions and Electron Probability Density
189(6)
8.2.2.5 Surface-State-Dependent Optical Properties of 4H-SiC-QDs
195(2)
8.3 Conclusions
197(2)
References
199(2)
9 Molecular Beam Epitaxy of A1GaN/GaN High Electron Mobility Transistor Heterostructures for High Power and High-Frequency Applications 201(24)
Yvon Cordier
Remi Comyn
Eric Frayssinet
9.1 Introduction
201(1)
9.2 Characteristics of Ammonia Source Molecular Beam Epitaxy
202(2)
9.3 Homoepitaxy of GaN HEMTs
204(1)
9.4 Heteroepitaxy of GaN HEMTs
204(1)
9.5 Electrical Properties
205(1)
9.6 Transistors Evaluation
206(8)
9.7 RF Devices
214(2)
9.8 Monolithic Integration with Si CMOS Technologies
216(3)
9.9 Conclusion
219(1)
Acknowledgments
220(1)
References
221(4)
10 Silicon Carbide Oscillators for Extreme Environments 225(28)
Daniel R. Brennan
Hua-Khee Chan
Nicholas G. Wright
Alton B. Horsfall
10.1 Introduction
225(1)
10.2 Silicon Carbide Technology Overview
226(1)
10.3 The Electronic Oscillator
226(8)
10.3.1 The Nonlinear Oscillator
227(2)
10.3.2 The Linear Oscillator
229(5)
10.3.2.1 The Negative Resistance Oscillator
230(1)
10.3.2.2 The Feedback Oscillator
231(3)
10.4 The Colpitts Oscillator
234(16)
10.4.1 High-Temperature Colpitts Oscillator
238(1)
10.4.2 High-Temperature Voltage-Controlled Oscillator
238(3)
10.4.3 Modulation
241(9)
10.5 Conclusions
250(1)
References
251(2)
11 The Use of Error Correction Codes within Molecular Communications Systems 253(32)
Yi Lu
Matthew D. Higgins
Mark S. Leeson
11.1 Introduction
254(2)
11.1.1 Architecture of the MC System
254(1)
11.1.2 MC Types
255(1)
11.1.3 Literature Review of ECCs in the MC System
255(1)
11.2 Design of the Point-to-Point DBMC System
256(1)
11.3 The Propagation Model
257(2)
11.4 The Communication Channel Model
259(1)
11.5 BER Analysis for the MC System
260(3)
11.5.1 BER Analysis
260(1)
11.5.2 Numerical Results
261(2)
11.6 ECCs in the PTP DBMC System
263(12)
11.6.1 Overview
263(1)
11.6.2 The Construction of Logic Gates in the Biological Field
264(1)
11.6.3 Energy Model
265(1)
11.6.4 ECCs in MC Systems
265(5)
11.6.4.1 Hamming Codes
266(1)
11.6.4.2 C-RM Codes
267(1)
11.6.4.3 EG-LDPC Codes
267(1)
11.6.4.4 SOCCs
268(2)
11.6.5 BER and Coding Gain
270(1)
11.6.6 Energy Consumption Analysis
271(3)
11.6.6.1 Energy Consumption for Hamming Codes
272(1)
11.6.6.2 Energy Consumption for C-RM Codes
272(1)
11.6.6.3 Energy Consumption for LDPC Codes
273(1)
11.6.6.4 Energy Consumption for SOCCs
273(1)
11.6.7 Critical Distance
274(1)
11.7 Numerical Results
275(5)
11.7.1 BER for Coded DBMC Systems
275(1)
11.7.2 Critical Distance
275(5)
11.8 Summary
280(1)
References
281(4)
12 Miniaturized Battery-Free Wireless Bio-Integrated Systems 285(12)
Philipp Gutruf
12.1 Introduction: Background and Driving Forces
285(1)
12.2 NFC: Viable Standard for Highly Integrated Bioelectronics
286(1)
12.3 Mechanical Design: Transforming Flexible Electronics to Stretchable Devices
287(2)
12.4 Miniaturization: Benefits for Bio-Integration
289(2)
12.5 Applications: Contactless Vital Information Sensing
291(3)
12.6 Discussion: Battery-Free Miniaturized Electronics - Applications Beyond the Skin
294(1)
References
295(2)
13 A Low-Power Vision- and IMU-Based System for the Intraoperative Prosthesis Pose Estimation of Total Hip Replacement Surgeries 297(32)
Shaojie Su
Hong Chen
Hanjun Jiang
Zhihua Wang
13.1 Introduction
298(2)
13.1.1 Background of Total Hip Replacement
298(1)
13.1.2 Related Research Work
298(1)
13.1.3 Introduction of the Proposed System
299(1)
13.2 System Design
300(2)
13.2.1 System Architecture
300(1)
13.2.2 Design of the Reference Patterns
301(1)
13.2.3 Design of the SoC
302(1)
13.3 Pose Estimation Methods for Hip Joint Prostheses
302(16)
13.3.1 Modeling and Representation of Hip Joint Motions
302(6)
13.3.2 Problem Definition
308(1)
13.3.3 IMU-Based Pose Estimation Method
308(4)
13.3.4 Vision-Based Pose Estimation Method
312(5)
13.3.4.1 Initialization
314(1)
13.3.4.2 Feature Detection
315(1)
13.3.4.3 Feature Matching
315(2)
13.3.4.4 Estimation of the Fundamental Matrix
317(1)
13.3.4.5 Recovery of Transformation Matrix
317(1)
13.3.5 Data Fusion of the Camera and the IMU
317(1)
13.4 Low-Power Technology
318(3)
13.4.1 Low-Power RF Transceiver
319(2)
13.4.2 Adaptive Sensor Control
321(1)
13.5 Implementation and Experimental Results
321(4)
13.5.1 Implementation Results of the SoC
321(1)
13.5.2 Experimental Platform for the System
322(1)
13.5.3 Hip Joint Demonstration System
323(2)
13.6 Conclusion
325(1)
References
325(4)
Index 329
Sumeet Walia is a Vice Chancellors Fellow at the Royal Melbourne Institute of Technology (RMIT) in Australia. Dr. Walia earned his PhD in the multidisciplinary field of functional materials and devices. His research focuses on low-dimensional nanoelectronics including micro/nano scale energy sources, electronic memories, sensors and transistors. He holds 3 patents and has been recognized as one of the top 10 innovators under-35 in Asia by the MIT Technology Review. He has published several high-impact research articles and is a reviewer for a number of international peer-reviewed journals and government grant bodies. He can be reached at waliasumeet@gmail.com and sumeet.walia@rmit.edu.au.



Krzysztof (Kris) Iniewski (kris.iniewski@gmail.com) is managing R&D development activities at Redlen Technologies Inc., a detector company based in British Columbia, Canada. During his 12 years at Redlen, he managed development of highly integrated CZT detector products in medical imaging and security applications. Prior to Redlen, Kris held various management and academic positions at PMC-Sierra, University of Alberta, SFU, UBC and University of Toronto. He has published over 150 research papers in international journals and conferences.









Dr. Iniewski holds 18 international patents granted in USA, Canada, France, Germany, and Japan. He wrote and edited several books for Wiley, Cambridge University Press, Mc-Graw Hill, CRC Press and Springer. He is a frequently invited speaker and has consulted for multiple organizations internationally. He received his Ph.D. degree in electronics (honors) from the Warsaw University of Technology (Warsaw, Poland) in 1988.