| Preface |
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| Materials Research Society Symposium Proceedings |
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xi | |
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ADVANCED FLASH AND NANOFLOATING MEMORIES |
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From SOI IT-DRAMs to Unified Memory Concepts |
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3 | (12) |
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High-k Dielectrics for Hybrid Floating Gate Memory Applications |
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15 | (6) |
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Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-k Film - Device Performance and Light Wavelength Effects |
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21 | (8) |
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GaN Quantum Dots as Charge Storage Elements for Memory Devices |
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29 | (6) |
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SONOS Memory Devices with Ion Beam Modified Nitride Layers |
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35 | (6) |
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High-density Co/Al2O3 Core-shell Nanocrystal Memory |
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41 | (8) |
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FERROELECTRIC AND MAGNETORESISTIVE MEMORIES |
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Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel |
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49 | (6) |
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Nonvolatile Power-Gating FPGA Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque MTJs |
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55 | (6) |
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High-Quality, Smooth Fe3O4 Thin Films on Si By Controlled Oxidation of Fe in CO/CO2 |
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61 | (8) |
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ORGANIC AND MOLECULAR MEMORIES |
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Flexible Polymer Atomic Switches Using Ink-Jet Printing Technique |
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69 | (6) |
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Development of Organic Resistive Memory for Flexible Electronics |
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75 | (6) |
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Simulation of Space Charge Limited Organic Non Volatile Memory Elements |
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81 | (8) |
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RESISTIVE SWITCHING MEMORIES |
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Ab-Initio Modeling of the Resistance Switching Mechanism in RRAM Devices: Case Study of Hafnium Oxide (HfO2) |
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89 | (10) |
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Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces |
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99 | (6) |
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Atsushi Tsurumaki-Fukuchi |
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Correlation between Controllability of Reset Current and Electrostatic Energy Released from the Self Capacitance of Conducting Bridge Random Access Memory |
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105 | (6) |
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Synthesis of Resistive Memory Oxides by Ion Implantation |
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111 | (6) |
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Firing of a Pulse and its Control Using a Novel Floating Electrode Bi-resistive Device |
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117 | (6) |
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Dynamic Simulation of the Migration of Oxygen Vacancy Defects in Rutile TiO2 |
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123 | (6) |
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Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-Iayer Prepared by Magnetron Sputtering Method |
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129 | (6) |
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Anti-Parallel Circuit of Resistive Cu/TaOx/Pt Switches |
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135 | (6) |
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Time-dependent Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory |
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141 | (6) |
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Intrinsic Resistive Switching in Bulk SiOx Films |
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147 | (6) |
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Impacts of Temperature and Moisture on the Resistive Switching Characteristics of a Cu-Ta2O5-Based Atomic Switch |
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153 | (6) |
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Identification of the Location of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells and Investigation on Their Properties |
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159 | (6) |
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High Total-Dose Proton Radiation Tolerance in TiN/HfO2/TiN ReRAM Devices |
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165 | (6) |
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Time Voltage Dependency in Resistance Switching TiO2 |
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171 | (6) |
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Improvement of RRAM Device Performance Through On-Chip Resistors |
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177 | (6) |
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First-principles Investigation of the Conductive Filament Configuration in Rutile TiO2-x ReRAM |
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183 | (6) |
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Electric-Field-Induced Al2O3/3C-SiC Resistance Memory |
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189 | (6) |
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| Author Index |
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195 | (2) |
| Subject Index |
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197 | |
