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Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit: From Mega-Bit to Giga-Bit [Pehme köide]

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  • Formaat: Paperback / softback, 293 pages, kõrgus x laius: 216x138 mm, kaal: 480 g
  • Ilmumisaeg: 26-Nov-1998
  • Kirjastus: Taylor & Francis Ltd
  • ISBN-10: 9056990985
  • ISBN-13: 9789056990985
Teised raamatud teemal:
Mega-Bit Memory Technology - From Mega-Bit to Giga-Bit: From Mega-Bit to Giga-BitSuurem pilt
  • Formaat: Paperback / softback, 293 pages, kõrgus x laius: 216x138 mm, kaal: 480 g
  • Ilmumisaeg: 26-Nov-1998
  • Kirjastus: Taylor & Francis Ltd
  • ISBN-10: 9056990985
  • ISBN-13: 9789056990985
Teised raamatud teemal:
Püsilink: https://www.kriso.ee/db/9789056990985.html
Märksõnad:
This book describes LSI process technology, and focuses on the rapid progress of state-of-the-art dynamic random access memory (DRAM) process technologies—the longstanding technology driver of Si ULSI—as they advance from the 1 Kbit to the Gbit DRAM era.
Preface to the Series ix Preface xi Contributors xiii MOS Device Technology 1(14) Hiroyuki Tango Introduction 1(2) MOS device technology 3(3) Scaling law for lower sub-micron MOS devices 6(2) Toward Gbit and beyond 8(2) Si quantum devices 10(5) Memory Cell Technology 15(24) Hiroyuki Tango Memory cell technology trend 15(3) Trench capacitor cells 18(8) Stacked capacitor cell 26(6) High &epsis; and ferroelectric films for the gigabit generation 32(7) Lithography 39(59) Masataka Miyamura Introduction 39(1) Photolithography 39(13) Resist and resist process 52(25) EB lithography 77(8) X-ray lithography 85(13) Dry Etching 98(27) Makoto Sekine Introduction 98(1) Basic etching hardware and process technologies 98(13) Emerging etching process technologies 111(14) Thin Film Insulator 125(24) Kikuo Yamabe Introduction 125(1) Oxide breakdown defect 125(4) Trench corner oxidation 129(9) Fatigue breakdown 138(4) Polysilicon oxide 142(2) Trapping center 144(2) Stress induced leakage current 146(2) Summary 148(1) Impurity Doping 149(28) Kikuo Yamabe Introduction 149(1) Impurity doping 149(3) Macroscopic diffusion mechanism 152(3) Microscopic diffusion mechanism 155(1) Point defect control technology 156(17) Summary 173(4) Metallization 177(19) Kyoichi Suguro Gate electrodes 178(2) Source and drain contacts 180(5) Interconnects 185(6) Summary 191(5) Chemical Vapor Deposition (CVD) 196(23) Nobuo Hayasaka Introduction 196(1) CVD of polycrystalline silicon 196(1) CVD of metals 197(7) CVD of insulators 204(15) Crystal Technology 219(32) Yoshiaki Matsusita Introduction 219(1) Silicon crystal growth technology 219(9) Crystalline defect control 228(12) Epitaxial wafer 240(5) SOI technology 245(2) Hereafter subject of crystal technology 247(4) Process and Device Simulation 251(20) Tetsunori Wada Introduction 251(1) Process simulation 252(11) Device simulation 263(6) Conclusion 269(2) SOI Technology 271(17) Makoto Yoshimi History of SOI technology 271(1) Thin-film SOI structure 272(3) SOI substrate technology 275(4) Application to ULSI circuits 279(6) Summary 285(3) Index 288
Hiroyuki Tango