Preface |
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xxiii | |
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1 The Semiconductor Industry |
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1 | (18) |
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1 | (1) |
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1 | (2) |
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3 | (1) |
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Integrated Circuits (ICs) |
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4 | (1) |
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Process and Product Trends |
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5 | (6) |
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6 | (1) |
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6 | (2) |
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Increasing Chip and Wafer Size |
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8 | (1) |
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Reduction in Defect Density |
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9 | (1) |
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Increase in Interconnection Levels |
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10 | (1) |
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The Semiconductor Industry Association Roadmap |
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10 | (1) |
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11 | (1) |
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11 | (1) |
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12 | (2) |
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Six Decades of Advances in Microchip Fabrication Processes |
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14 | (2) |
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16 | (1) |
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17 | (2) |
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17 | (2) |
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2 Properties of Semiconductor Materials and Chemicals |
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19 | (22) |
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19 | (1) |
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19 | (1) |
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19 | (1) |
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The Periodic Table of the Elements |
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20 | (3) |
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23 | (1) |
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23 | (1) |
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Dielectrics and Capacitors |
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23 | (1) |
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24 | (1) |
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24 | (1) |
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25 | (1) |
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Electron and Hole Conduction |
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26 | (3) |
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28 | (1) |
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Semiconductor Production Materials |
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29 | (1) |
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29 | (1) |
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29 | (2) |
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31 | (1) |
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31 | (1) |
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31 | (1) |
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32 | (1) |
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32 | (2) |
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Molecules, Compounds, and Mixtures |
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32 | (1) |
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33 | (1) |
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34 | (1) |
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Solids, Liquids, and Gases |
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34 | (1) |
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34 | (1) |
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34 | (2) |
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34 | (1) |
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Density, Specific Gravity, and Vapor Density |
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35 | (1) |
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36 | (1) |
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Acids, Alkalis, and Solvents |
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37 | (1) |
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37 | (1) |
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38 | (1) |
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Chemical Purity and Cleanliness |
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38 | (1) |
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38 | (1) |
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The Material Safety Data Sheet |
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39 | (1) |
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39 | (2) |
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39 | (2) |
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3 Crystal Growth and Silicon Wafer Preparation |
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41 | (18) |
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41 | (1) |
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Semiconductor Silicon Preparation |
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41 | (1) |
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Silicon Wafer Preparation Stages |
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42 | (1) |
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42 | (2) |
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43 | (1) |
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43 | (1) |
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44 | (1) |
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45 | (4) |
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45 | (2) |
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Liquid-Encapsulated Czochralski |
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47 | (1) |
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47 | (2) |
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Crystal and Wafer Quality |
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49 | (2) |
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49 | (1) |
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50 | (1) |
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50 | (1) |
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51 | (2) |
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51 | (1) |
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51 | (1) |
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Crystal Orientation, Conductivity, and Resistivity Check |
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51 | (1) |
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Grinding Orientation Indicators |
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52 | (1) |
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53 | (1) |
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54 | (1) |
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54 | (1) |
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Chemical Mechanical Polishing |
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55 | (1) |
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55 | (1) |
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56 | (1) |
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Edge Grinding and Polishing |
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56 | (1) |
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56 | (1) |
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57 | (1) |
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57 | (1) |
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57 | (1) |
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57 | (1) |
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Engineered Wafers (Substrates) |
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57 | (1) |
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58 | (1) |
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58 | (1) |
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4 Overview of Wafer Fabrication and Packaging |
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59 | (18) |
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59 | (1) |
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Goal of Wafer Fabrication |
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59 | (1) |
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59 | (2) |
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61 | (2) |
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Basic Wafer-Fabrication Operations |
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63 | (1) |
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63 | (9) |
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64 | (2) |
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66 | (2) |
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68 | (1) |
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69 | (1) |
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69 | (3) |
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Example Fabrication Process |
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72 | (2) |
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74 | (1) |
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75 | (1) |
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75 | (1) |
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76 | (1) |
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76 | (1) |
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77 | (38) |
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77 | (4) |
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77 | (3) |
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Contamination-Caused Problems |
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80 | (1) |
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81 | (7) |
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81 | (1) |
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81 | (1) |
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82 | (1) |
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Cleanroom Workstation Strategy |
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83 | (2) |
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85 | (1) |
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Micro- and Mini-Environments |
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86 | (1) |
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Temperature, Humidity, and Smog |
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87 | (1) |
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88 | (11) |
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88 | (1) |
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89 | (4) |
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Personnel-Generated Contamination |
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93 | (1) |
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94 | (2) |
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96 | (3) |
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99 | (1) |
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Cleanroom Materials and Supplies |
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99 | (1) |
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100 | (1) |
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100 | (12) |
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102 | (1) |
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102 | (1) |
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High-Pressure Water Cleaning |
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103 | (1) |
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103 | (1) |
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103 | (1) |
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Chemical-Cleaning Solutions |
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104 | (1) |
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General Chemical Cleaning |
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104 | (1) |
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105 | (1) |
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Room Temperature and Ozonated Chemistries |
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106 | (2) |
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108 | (2) |
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110 | (2) |
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112 | (1) |
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112 | (3) |
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113 | (2) |
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6 Productivity and Process Yields |
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115 | (16) |
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115 | (1) |
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115 | (1) |
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Accumulative Wafer-Fabrication Yield |
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116 | (1) |
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Wafer-Fabrication Yield Limiters |
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117 | (11) |
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118 | (1) |
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Wafer Breakage and Warping |
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118 | (1) |
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119 | (1) |
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120 | (1) |
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120 | (1) |
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Wafer Diameter and Edge Die |
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121 | (1) |
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Wafer Diameter and Die Size |
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122 | (1) |
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Wafer Diameter and Crystal Defects |
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122 | (1) |
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Wafer Diameter and Process Variations |
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123 | (1) |
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Die Area and Defect Density |
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124 | (1) |
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Circuit Density and Defect Density |
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125 | (1) |
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125 | (1) |
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Feature Size and Defect Size |
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125 | (1) |
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125 | (1) |
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Wafer-Sort Yield Formulas |
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125 | (3) |
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Assembly and Final Test Yields |
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128 | (1) |
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128 | (1) |
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129 | (2) |
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130 | (1) |
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131 | (30) |
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131 | (1) |
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Silicon Dioxide Layer Uses |
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131 | (3) |
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131 | (1) |
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132 | (1) |
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132 | (1) |
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Device Dielectric (MOS Gates) |
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133 | (1) |
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134 | (1) |
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Thermal Oxidation Mechanisms |
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134 | (20) |
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Influences on the Oxidation Rate |
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137 | (3) |
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Thermal Oxidation Methods |
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140 | (1) |
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140 | (1) |
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Temperature Control System |
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141 | (2) |
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143 | (1) |
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143 | (3) |
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146 | (3) |
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149 | (2) |
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151 | (3) |
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154 | (1) |
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Preoxidation Wafer Cleaning |
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154 | (1) |
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155 | (2) |
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156 | (1) |
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156 | (1) |
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Oxide and Furnace Cleanliness |
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156 | (1) |
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156 | (1) |
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157 | (4) |
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157 | (4) |
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8 The Ten-Step Patterning Process---Surface Preparation to Exposure |
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161 | (40) |
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161 | (1) |
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Overview of the Photomasking Process |
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162 | (3) |
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165 | (2) |
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Basic Photoresist Chemistry |
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167 | (2) |
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167 | (2) |
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Photoresist Performance Factors |
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169 | (6) |
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169 | (1) |
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170 | (1) |
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171 | (1) |
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172 | (1) |
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Particle and Contamination Levels |
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173 | (1) |
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173 | (1) |
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173 | (1) |
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Comparison of Positive and Negative Resists |
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173 | (2) |
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Physical Properties of Photoresists |
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175 | (3) |
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175 | (1) |
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175 | (1) |
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176 | (1) |
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176 | (1) |
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Storage and Control of Photoresists |
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176 | (1) |
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Light and Heat Sensitivity |
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176 | (1) |
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177 | (1) |
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177 | (1) |
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177 | (1) |
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Photomasking Processes---Surface Preparation to Exposure |
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178 | (1) |
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178 | (3) |
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178 | (1) |
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178 | (1) |
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179 | (1) |
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180 | (1) |
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180 | (1) |
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Photoresist Application (Spinning) |
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181 | (4) |
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The Static Dispense Spin Process |
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181 | (2) |
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183 | (1) |
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183 | (1) |
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183 | (1) |
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184 | (1) |
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185 | (1) |
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185 | (1) |
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185 | (4) |
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186 | (1) |
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187 | (1) |
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In-Line, Single-Wafer Hot Plates |
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187 | (1) |
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187 | (1) |
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Moving-Belt Infrared Ovens |
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188 | (1) |
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188 | (1) |
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188 | (1) |
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189 | (9) |
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Alignment and Exposure Systems |
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189 | (2) |
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191 | (1) |
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191 | (2) |
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193 | (3) |
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196 | (2) |
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198 | (1) |
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198 | (3) |
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198 | (3) |
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9 The Ten-Step Patterning Process---Developing to Final Inspection |
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201 | (32) |
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201 | (6) |
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201 | (1) |
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Positive Resist Development |
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201 | (2) |
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Negative Resist Development |
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203 | (1) |
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Wet Development Processes |
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203 | (3) |
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Dry (or Plasma) Development |
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206 | (1) |
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207 | (5) |
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207 | (1) |
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207 | (1) |
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208 | (1) |
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Develop Inspect Reject Categories |
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209 | (1) |
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209 | (2) |
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Causes for Rejecting at the Develop Inspection Stage |
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211 | (1) |
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212 | (1) |
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212 | (5) |
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212 | (1) |
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212 | (1) |
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Overetch and Undercutting |
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213 | (1) |
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214 | (1) |
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214 | (1) |
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214 | (1) |
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Silicon Dioxide Wet Etching |
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215 | (1) |
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Aluminum-Film Wet Etching |
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216 | (1) |
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Deposited-Oxide Wet Etching |
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216 | (1) |
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Silicon Nitride Wet Etching |
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216 | (1) |
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217 | (1) |
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217 | (6) |
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218 | (2) |
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220 | (1) |
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220 | (1) |
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220 | (2) |
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222 | (1) |
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222 | (1) |
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Resist Effects in Dry Etching |
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223 | (1) |
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223 | (3) |
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Wet Chemical Stripping of Nonmetallized Surfaces |
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224 | (1) |
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Wet Chemical Stripping of Metallized Surfaces |
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225 | (1) |
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225 | (1) |
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Post--Ion Implant and Plasma Etch Stripping |
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226 | (1) |
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226 | (1) |
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227 | (1) |
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227 | (2) |
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229 | (1) |
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229 | (4) |
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230 | (3) |
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10 Next Generation Lithography |
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233 | (36) |
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233 | (1) |
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Challenges of Next Generation Lithography |
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233 | (8) |
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High-Pressure Mercury Lamp Sources |
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235 | (1) |
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236 | (1) |
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236 | (1) |
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237 | (1) |
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Electron Beam or Direct Writing |
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238 | (2) |
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Numerical Aperture of a Lens |
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240 | (1) |
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241 | (3) |
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Variable Numerical Aperture Lenses |
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242 | (1) |
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Immersion Exposure System |
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242 | (1) |
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242 | (1) |
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243 | (1) |
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Other Resolution Challenges and Solutions |
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244 | (4) |
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245 | (1) |
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Lens Issues and Reflection Systems |
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245 | (1) |
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245 | (1) |
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Optical Proximity Corrected or Optical Process Correction |
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245 | (1) |
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Annular-Ring Illumination |
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246 | (1) |
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247 | (1) |
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248 | (1) |
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248 | (1) |
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248 | (1) |
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249 | (3) |
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249 | (2) |
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251 | (1) |
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Photoresist Process Advances |
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252 | (12) |
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Multilayer Resist or Surface Imaging |
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252 | (2) |
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Silylation or DESIRE Process |
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254 | (1) |
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Polyimide Planarization Layers |
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255 | (1) |
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256 | (1) |
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256 | (1) |
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Chemical Mechanical Polishing |
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256 | (3) |
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259 | (1) |
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259 | (1) |
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260 | (1) |
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261 | (1) |
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261 | (1) |
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262 | (1) |
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262 | (1) |
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262 | (1) |
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Contrast Enhancement Layers |
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262 | (2) |
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264 | (1) |
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Improving Etch Definition |
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264 | (1) |
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264 | (1) |
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264 | (2) |
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266 | (1) |
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266 | (3) |
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266 | (3) |
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269 | (30) |
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269 | (1) |
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269 | (2) |
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Formation of a Doped Region and Junction |
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271 | (4) |
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272 | (1) |
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273 | (1) |
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Graphical Representation of Junctions |
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273 | (1) |
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Concentration versus Depth Graphs |
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273 | (1) |
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273 | (2) |
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275 | (1) |
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275 | (1) |
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275 | (3) |
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278 | (1) |
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278 | (2) |
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278 | (2) |
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280 | (1) |
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281 | (1) |
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Introduction to Ion Implantation |
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281 | (2) |
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Concept of Ion Implantation |
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283 | (1) |
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284 | (7) |
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284 | (1) |
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284 | (1) |
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Mass Analyzing or Ion Selection |
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284 | (2) |
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286 | (1) |
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286 | (1) |
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287 | (1) |
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287 | (1) |
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287 | (2) |
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End Station and Target Chamber |
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289 | (1) |
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290 | (1) |
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Dopant Concentration in Implanted Regions |
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291 | (3) |
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292 | (1) |
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Annealing and Dopant Activation |
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292 | (1) |
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293 | (1) |
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Evaluation of Implanted Layers |
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294 | (1) |
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295 | (2) |
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297 | (1) |
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297 | (2) |
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298 | (1) |
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299 | (34) |
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299 | (3) |
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301 | (1) |
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Chemical Vapor Deposition Basics |
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302 | (3) |
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Basic CVD System Components |
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303 | (2) |
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305 | (1) |
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305 | (1) |
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Atmospheric-Pressure CVD Systems |
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306 | (3) |
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Horizontal-Tube Induction-Heated APCVD |
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306 | (1) |
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Barrel Radiant-Induction-Heated APCVD |
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307 | (1) |
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Pancake Induction-Heated APCVD |
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307 | (1) |
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Continuous Conduction Heated APCVD |
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308 | (1) |
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Horizontal Conduction-Heated APCVD |
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309 | (1) |
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Low-Pressure Chemical Vapor Deposition |
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309 | (4) |
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Horizontal Conduction-Convection-Heated LPCVD |
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309 | (1) |
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310 | (1) |
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Plasma-Enhanced CVD (PECVD) |
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310 | (2) |
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312 | (1) |
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313 | (2) |
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315 | (1) |
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315 | (2) |
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317 | (1) |
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318 | (1) |
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318 | (1) |
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318 | (6) |
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Polysilicon and Amorphous Silicon Deposition |
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324 | (1) |
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325 | (1) |
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Gallium Arsenide on Silicon |
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326 | (1) |
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Insulators and Dielectrics |
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326 | (3) |
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326 | (1) |
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327 | (1) |
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328 | (1) |
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High-k and Low-k Dielectrics |
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329 | (1) |
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329 | (1) |
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329 | (4) |
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330 | (3) |
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333 | (22) |
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333 | (1) |
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333 | (1) |
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Single-Layer Metal Systems |
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334 | (1) |
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335 | (1) |
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336 | (3) |
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336 | (1) |
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336 | (1) |
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337 | (1) |
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338 | (1) |
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Refractory Metals and Refractory Metal Silicides |
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338 | (1) |
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339 | (1) |
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340 | (8) |
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Copper Dual-Damascene Process |
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345 | (1) |
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Low-k Dielectric Materials |
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345 | (1) |
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The Dual-Damascene Copper Process |
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346 | (2) |
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Barrier or Liner Deposition |
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348 | (1) |
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|
348 | (1) |
|
|
348 | (1) |
|
Chemical-Mechanical Processing |
|
|
349 | (1) |
|
|
349 | (2) |
|
|
349 | (1) |
|
CVD Refractory Deposition |
|
|
350 | (1) |
|
|
351 | (1) |
|
MOS Gate and Capacitor Electrodes |
|
|
351 | (1) |
|
|
351 | (1) |
|
|
351 | (2) |
|
|
352 | (1) |
|
Turbomolecular Hi-Vac Pumps |
|
|
352 | (1) |
|
|
353 | (2) |
|
|
353 | (2) |
|
14 Process and Device Evaluation |
|
|
355 | (38) |
|
|
355 | (1) |
|
Wafer Electrical Measurements |
|
|
356 | (2) |
|
Resistance and Resistivity |
|
|
356 | (1) |
|
|
356 | (1) |
|
|
356 | (2) |
|
Process and Device Evaluation |
|
|
358 | (2) |
|
|
358 | (1) |
|
Four-Point Probe Thickness Measurement |
|
|
358 | (1) |
|
Concentration or Depth Profile |
|
|
359 | (1) |
|
Secondary Ion Mass Spectrometry |
|
|
359 | (1) |
|
Physical Measurement Methods |
|
|
360 | (1) |
|
Layer Thickness Measurements |
|
|
360 | (5) |
|
|
360 | (1) |
|
Spectrophotometers or Reflectometry |
|
|
361 | (2) |
|
|
363 | (1) |
|
Stylus (Surface Profilometers) |
|
|
363 | (2) |
|
|
365 | (1) |
|
Gate Oxide Integrity Electrical Measurement |
|
|
365 | (1) |
|
|
365 | (5) |
|
|
365 | (2) |
|
Scanning Electron Microscope Thickness Measurement |
|
|
367 | (1) |
|
Spreading Resistance Probe |
|
|
367 | (1) |
|
Secondary Ion Mass Spectrometry |
|
|
367 | (1) |
|
Scanning Capacitance Microscopy |
|
|
368 | (1) |
|
Critical Dimensions and Line-Width Measurements |
|
|
369 | (1) |
|
Optical Image-Shearing Dimension Measurement |
|
|
369 | (1) |
|
Shape Metrology and Optical Critical Dimension |
|
|
370 | (1) |
|
Contamination and Defect Detection |
|
|
370 | (8) |
|
1× Visual Surface Inspection Techniques |
|
|
370 | (1) |
|
|
370 | (2) |
|
|
372 | (1) |
|
|
372 | (4) |
|
Automated In-Line Defect Inspection Systems |
|
|
376 | (2) |
|
General Surface Characterization |
|
|
378 | (2) |
|
|
378 | (2) |
|
|
380 | (1) |
|
Contamination Identification |
|
|
380 | (2) |
|
Auger Electron Spectroscopy |
|
|
380 | (1) |
|
Electron Spectroscope for Chemical Analysis |
|
|
381 | (1) |
|
Time of Flight Secondary Ion Mass Spectrometry |
|
|
381 | (1) |
|
Evaluation of Stack Thickness and Composition |
|
|
382 | (1) |
|
Device Electrical Measurements |
|
|
382 | (8) |
|
|
383 | (1) |
|
|
383 | (1) |
|
|
384 | (2) |
|
|
386 | (1) |
|
|
387 | (1) |
|
Capacitance-Voltage Profiling |
|
|
387 | (3) |
|
Device Failure Analysis---Emission Microscopy |
|
|
390 | (1) |
|
|
390 | (3) |
|
|
391 | (2) |
|
15 The Business of Wafer Fabrication |
|
|
393 | (24) |
|
|
393 | (1) |
|
Moore's Law and the New Wafer-Fabrication Business |
|
|
393 | (1) |
|
|
394 | (8) |
|
|
395 | (1) |
|
|
395 | (1) |
|
|
396 | (1) |
|
|
397 | (1) |
|
|
397 | (1) |
|
|
398 | (1) |
|
|
398 | (1) |
|
|
399 | (2) |
|
|
401 | (1) |
|
|
402 | (1) |
|
|
402 | (1) |
|
|
402 | (1) |
|
|
403 | (1) |
|
|
403 | (1) |
|
Wafer-Delivery Automation |
|
|
404 | (1) |
|
Closed-Loop Control-System Automation |
|
|
405 | (1) |
|
|
405 | (2) |
|
|
407 | (2) |
|
|
407 | (1) |
|
Batch versus Single-Wafer Processing |
|
|
407 | (1) |
|
|
408 | (1) |
|
Statistical Process Control |
|
|
409 | (3) |
|
|
412 | (2) |
|
Just-in-Time Inventory Control |
|
|
413 | (1) |
|
Quality Control and Certification---ISO 9000 |
|
|
414 | (1) |
|
|
414 | (1) |
|
|
415 | (2) |
|
|
416 | (1) |
|
16 Introduction to Devices and Integrated Circuit Formation |
|
|
417 | (34) |
|
|
417 | (1) |
|
Semiconductor-Device Formation |
|
|
417 | (17) |
|
|
418 | (2) |
|
|
420 | (2) |
|
|
422 | (2) |
|
|
424 | (3) |
|
|
427 | (7) |
|
Alternatives to MOSFET Scaling Challenges |
|
|
434 | (2) |
|
|
434 | (2) |
|
Integrated-Circuit Formation |
|
|
436 | (9) |
|
Bipolar Circuit Formation |
|
|
437 | (4) |
|
MOS Integrated Circuit Formation |
|
|
441 | (4) |
|
|
445 | (1) |
|
Silicon on Insulator Isolation |
|
|
445 | (1) |
|
|
446 | (3) |
|
Microelectromechanical Systems |
|
|
447 | (1) |
|
|
447 | (1) |
|
|
447 | (1) |
|
|
447 | (1) |
|
|
448 | (1) |
|
|
448 | (1) |
|
|
448 | (1) |
|
|
448 | (1) |
|
|
449 | (2) |
|
|
449 | (2) |
|
17 Process and Device Evaluation |
|
|
451 | (14) |
|
|
451 | (1) |
|
|
451 | (3) |
|
|
454 | (8) |
|
|
454 | (3) |
|
|
457 | (4) |
|
|
461 | (1) |
|
|
462 | (2) |
|
|
464 | (1) |
|
|
464 | (1) |
|
|
465 | (38) |
|
|
465 | (1) |
|
|
466 | (2) |
|
Package Functions and Design |
|
|
468 | (5) |
|
|
468 | (1) |
|
|
468 | (1) |
|
|
469 | (1) |
|
|
469 | (1) |
|
|
469 | (2) |
|
Cleanliness and Static Control |
|
|
471 | (1) |
|
|
472 | (1) |
|
|
473 | (9) |
|
Prebonding Wafer Preparation |
|
|
473 | (1) |
|
|
474 | (1) |
|
|
475 | (1) |
|
|
476 | (1) |
|
|
476 | (1) |
|
|
477 | (3) |
|
Tape Automated Bonding Process |
|
|
480 | (1) |
|
Bump or Ball Flip-Chip Bonding |
|
|
480 | (2) |
|
Example Bump or Ball Process |
|
|
482 | (9) |
|
Copper Metallization (Damascene) Bump Bonding |
|
|
482 | (1) |
|
|
483 | (1) |
|
Die Separation and Die Pick and Place |
|
|
483 | (1) |
|
Alignment of Die to Package |
|
|
483 | (1) |
|
Attachment to Package (or Substrate) |
|
|
483 | (1) |
|
|
483 | (1) |
|
|
484 | (1) |
|
|
484 | (1) |
|
Postbonding and Preseal Inspection |
|
|
484 | (1) |
|
|
484 | (2) |
|
|
486 | (1) |
|
|
487 | (1) |
|
|
487 | (1) |
|
|
488 | (1) |
|
|
488 | (1) |
|
|
489 | (1) |
|
|
489 | (1) |
|
|
490 | (1) |
|
|
491 | (1) |
|
|
491 | (8) |
|
|
492 | (1) |
|
|
493 | (1) |
|
Ball-Grid Arrays or Flip-Chip Ball-Grid Arrays |
|
|
493 | (1) |
|
|
493 | (1) |
|
|
494 | (1) |
|
|
494 | (1) |
|
|
494 | (1) |
|
Three-Dimensional Packages |
|
|
494 | (1) |
|
|
495 | (2) |
|
Three-Dimensional Enabling Technologies |
|
|
497 | (1) |
|
|
498 | (1) |
|
|
498 | (1) |
|
The Known Good Die Problem |
|
|
498 | (1) |
|
Package Type or Technology Summary |
|
|
499 | (1) |
|
Package or PCB Connections |
|
|
499 | (1) |
|
Bare Die Techniques and Blob Top |
|
|
500 | (1) |
|
|
500 | (3) |
|
|
501 | (2) |
Glossary |
|
503 | (20) |
Index |
|
523 | |