Muutke küpsiste eelistusi

Microchip Fabrication: A Practical Guide to Semiconductor Processing, Sixth Edition 6th edition [Kõva köide]

  • Formaat: Hardback, 576 pages, kõrgus x laius x paksus: 241x196x37 mm, kaal: 1136 g, 225 Illustrations
  • Ilmumisaeg: 16-Nov-2013
  • Kirjastus: McGraw-Hill Professional
  • ISBN-10: 0071821015
  • ISBN-13: 9780071821018
Teised raamatud teemal:
  • Formaat: Hardback, 576 pages, kõrgus x laius x paksus: 241x196x37 mm, kaal: 1136 g, 225 Illustrations
  • Ilmumisaeg: 16-Nov-2013
  • Kirjastus: McGraw-Hill Professional
  • ISBN-10: 0071821015
  • ISBN-13: 9780071821018
Teised raamatud teemal:
Van Zant updates and revises his introductory textbook for semiconductor wafer-fabrication workers whether they be production workers, technicians, professionals in the materials and equipment sectors, or engineers. In this edition he retains the fundamental physics, chemistry, and electronics underlying the sophisticated manufacturing materials and process of modern semiconductor fabrication, and integrates the current processes. Among the topics are crystal growth and silicon wafer preparation, productivity and process yields, next generation lithography, evaluating processes and devices, and packaging. Annotation ©2014 Ringgold, Inc., Portland, OR (protoview.com)

The most complete, current guide to semiconductor processing

Fully revised to cover the latest advances in the field, Microchip Fabrication, Sixth Editionexplains every stage of semiconductor processing, from raw material preparation to testing to packaging and shipping the finished device. This practical resource provides easy-to-understand information on the physics, chemistry, and electronic fundamentals underlying the sophisticated manufacturing materials and processes of modern semiconductors.

State-of-the-art processes and cutting-edge technologies used in the patterning, doping, and layering steps are discussed in this new edition. Filled with detailed illustrations and real-world examples, this is a comprehensive, up-to-date introduction to the technologicalbackbone of the high-tech industry.

COVERAGE INCLUDES:

  • The semiconductor industry
  • Properties of semiconductor materials and chemicals
  • Crystal growth and silicon wafer preparation
  • Wafer fabrication and packaging
  • Contamination control
  • Productivity and process yields
  • Oxidation
  • The ten-step patterning process--surface preparation to exposure; developing to final inspection
  • Next generation lithography
  • Doping
  • Layer deposition
  • Metallization
  • Process and device evaluation
  • The business of wafer fabrication
  • Devices and integrated circuit formation
  • Integrated circuits
  • Packaging

Preface xxiii
1 The Semiconductor Industry
1(18)
Introduction
1(1)
Birth of an Industry
1(2)
The Solid-State Era
3(1)
Integrated Circuits (ICs)
4(1)
Process and Product Trends
5(6)
Moore's Law
6(1)
Decreasing Feature Size
6(2)
Increasing Chip and Wafer Size
8(1)
Reduction in Defect Density
9(1)
Increase in Interconnection Levels
10(1)
The Semiconductor Industry Association Roadmap
10(1)
Chip Cost
11(1)
Industry Organization
11(1)
Stages of Manufacturing
12(2)
Six Decades of Advances in Microchip Fabrication Processes
14(2)
The Nano Era
16(1)
Review Topics
17(2)
References
17(2)
2 Properties of Semiconductor Materials and Chemicals
19(22)
Introduction
19(1)
Atomic Structure
19(1)
The Bohr Atom
19(1)
The Periodic Table of the Elements
20(3)
Electrical Conduction
23(1)
Conductors
23(1)
Dielectrics and Capacitors
23(1)
Resistors
24(1)
Intrinsic Semiconductors
24(1)
Doped Semiconductors
25(1)
Electron and Hole Conduction
26(3)
Carrier Mobility
28(1)
Semiconductor Production Materials
29(1)
Germanium and Silicon
29(1)
Semiconducting Compounds
29(2)
Silicon Germanium
31(1)
Engineered Substrates
31(1)
Ferroelectric Materials
31(1)
Diamond Semiconductors
32(1)
Process Chemicals
32(2)
Molecules, Compounds, and Mixtures
32(1)
Ions
33(1)
States of Matter
34(1)
Solids, Liquids, and Gases
34(1)
Plasma State
34(1)
Properties of Matter
34(2)
Temperature
34(1)
Density, Specific Gravity, and Vapor Density
35(1)
Pressure and Vacuum
36(1)
Acids, Alkalis, and Solvents
37(1)
Acids and Alkalis
37(1)
Solvents
38(1)
Chemical Purity and Cleanliness
38(1)
Safety Issues
38(1)
The Material Safety Data Sheet
39(1)
Review Topics
39(2)
References
39(2)
3 Crystal Growth and Silicon Wafer Preparation
41(18)
Introduction
41(1)
Semiconductor Silicon Preparation
41(1)
Silicon Wafer Preparation Stages
42(1)
Crystalline Materials
42(2)
Unit Cells
43(1)
Poly and Single Crystals
43(1)
Crystal Orientation
44(1)
Crystal Growth
45(4)
Czochralski Method
45(2)
Liquid-Encapsulated Czochralski
47(1)
Float Zone
47(2)
Crystal and Wafer Quality
49(2)
Point Defects
49(1)
Dislocations
50(1)
Growth Defects
50(1)
Wafer Preparation
51(2)
End Cropping
51(1)
Diameter Grinding
51(1)
Crystal Orientation, Conductivity, and Resistivity Check
51(1)
Grinding Orientation Indicators
52(1)
Wafer Slicing
53(1)
Wafer Marking
54(1)
Rough Polish
54(1)
Chemical Mechanical Polishing
55(1)
Backside Processing
55(1)
Double-Sided Polishing
56(1)
Edge Grinding and Polishing
56(1)
Wafer Evaluation
56(1)
Oxidation
57(1)
Packaging
57(1)
Wafer Types and Uses
57(1)
Reclaim Wafers
57(1)
Engineered Wafers (Substrates)
57(1)
Review Topics
58(1)
References
58(1)
4 Overview of Wafer Fabrication and Packaging
59(18)
Introduction
59(1)
Goal of Wafer Fabrication
59(1)
Wafer Terminology
59(2)
Chip Terminology
61(2)
Basic Wafer-Fabrication Operations
63(1)
Layering
63(9)
Patterning
64(2)
Circuit Design
66(2)
Reticle and Masks
68(1)
Doping
69(1)
Heat Treatments
69(3)
Example Fabrication Process
72(2)
Wafer Sort
74(1)
Packaging
75(1)
Summary
75(1)
Review Topics
76(1)
References
76(1)
5 Contamination Control
77(38)
Introduction
77(4)
The Problem
77(3)
Contamination-Caused Problems
80(1)
Contamination Sources
81(7)
General Sources
81(1)
Air
81(1)
Clean Air Strategies
82(1)
Cleanroom Workstation Strategy
83(2)
Tunnel or Bay Concept
85(1)
Micro- and Mini-Environments
86(1)
Temperature, Humidity, and Smog
87(1)
Cleanroom Construction
88(11)
Construction Materials
88(1)
Cleanroom Elements
89(4)
Personnel-Generated Contamination
93(1)
Process Water
94(2)
Process Chemicals
96(3)
Equipment
99(1)
Cleanroom Materials and Supplies
99(1)
Cleanroom Maintenance
100(1)
Wafer-Surface Cleaning
100(12)
Particulate Removal
102(1)
Wafer Scrubbers
102(1)
High-Pressure Water Cleaning
103(1)
Organic Residues
103(1)
Inorganic Residues
103(1)
Chemical-Cleaning Solutions
104(1)
General Chemical Cleaning
104(1)
Oxide Layer Removal
105(1)
Room Temperature and Ozonated Chemistries
106(2)
Water Rinsing
108(2)
Drying Techniques
110(2)
Contamination Detection
112(1)
Review Topics
112(3)
References
113(2)
6 Productivity and Process Yields
115(16)
Overview
115(1)
Yield Measurement Points
115(1)
Accumulative Wafer-Fabrication Yield
116(1)
Wafer-Fabrication Yield Limiters
117(11)
Number of Process Steps
118(1)
Wafer Breakage and Warping
118(1)
Process Variation
119(1)
Mask Defects
120(1)
Wafer-Sort Yield Factors
120(1)
Wafer Diameter and Edge Die
121(1)
Wafer Diameter and Die Size
122(1)
Wafer Diameter and Crystal Defects
122(1)
Wafer Diameter and Process Variations
123(1)
Die Area and Defect Density
124(1)
Circuit Density and Defect Density
125(1)
Number of Process Steps
125(1)
Feature Size and Defect Size
125(1)
Process Cycle Time
125(1)
Wafer-Sort Yield Formulas
125(3)
Assembly and Final Test Yields
128(1)
Overall Process Yields
128(1)
Review Topics
129(2)
References
130(1)
7 Oxidation
131(30)
Introduction
131(1)
Silicon Dioxide Layer Uses
131(3)
Surface Passivation
131(1)
Doping Barrier
132(1)
Surface Dielectric
132(1)
Device Dielectric (MOS Gates)
133(1)
Device Oxide Thicknesses
134(1)
Thermal Oxidation Mechanisms
134(20)
Influences on the Oxidation Rate
137(3)
Thermal Oxidation Methods
140(1)
Horizontal Tube Furnaces
140(1)
Temperature Control System
141(2)
Source Cabinet
143(1)
Vertical Tube Furnaces
143(3)
Rapid Thermal Processing
146(3)
High-Pressure Oxidation
149(2)
Oxidant Sources
151(3)
Oxidation Processes
154(1)
Preoxidation Wafer Cleaning
154(1)
Postoxidation Evaluation
155(2)
Surface Inspection
156(1)
Oxide Thickness
156(1)
Oxide and Furnace Cleanliness
156(1)
Thermal Nitridation
156(1)
Review Topics
157(4)
References
157(4)
8 The Ten-Step Patterning Process---Surface Preparation to Exposure
161(40)
Introduction
161(1)
Overview of the Photomasking Process
162(3)
Ten-Step Process
165(2)
Basic Photoresist Chemistry
167(2)
Photoresist
167(2)
Photoresist Performance Factors
169(6)
Resolution Capability
169(1)
Adhesion Capability
170(1)
Process Latitude
171(1)
Pinholes
172(1)
Particle and Contamination Levels
173(1)
Step Coverage
173(1)
Thermal Flow
173(1)
Comparison of Positive and Negative Resists
173(2)
Physical Properties of Photoresists
175(3)
Solids Content
175(1)
Viscosity
175(1)
Surface Tension
176(1)
Index of Refraction
176(1)
Storage and Control of Photoresists
176(1)
Light and Heat Sensitivity
176(1)
Viscosity Sensitivity
177(1)
Shelf Life
177(1)
Cleanliness
177(1)
Photomasking Processes---Surface Preparation to Exposure
178(1)
Surface Preparation
178(3)
Particle Removal
178(1)
Dehydration Baking
178(1)
Wafer Priming
179(1)
Spin Priming
180(1)
Vapor Priming
180(1)
Photoresist Application (Spinning)
181(4)
The Static Dispense Spin Process
181(2)
Dynamic Dispense
183(1)
Moving-Arm Dispensing
183(1)
Manual Spinners
183(1)
Automatic Spinners
184(1)
Edge Bead Removal
185(1)
Backside Coating
185(1)
Soft Bake
185(4)
Convection Ovens
186(1)
Manual Hot Plates
187(1)
In-Line, Single-Wafer Hot Plates
187(1)
Moving-Belt Hot Plates
187(1)
Moving-Belt Infrared Ovens
188(1)
Microwave Baking
188(1)
Vacuum Baking
188(1)
Alignment and Exposure
189(9)
Alignment and Exposure Systems
189(2)
Exposure Sources
191(1)
Alignment Criteria
191(2)
Aligner Types
193(3)
Postexposure Bake
196(2)
Advanced Lithography
198(1)
Review Topics
198(3)
References
198(3)
9 The Ten-Step Patterning Process---Developing to Final Inspection
201(32)
Introduction
201(6)
Development
201(1)
Positive Resist Development
201(2)
Negative Resist Development
203(1)
Wet Development Processes
203(3)
Dry (or Plasma) Development
206(1)
Hard Bake
207(5)
Hard-Bake Methods
207(1)
Hard-Bake Process
207(1)
Develop Inspect
208(1)
Develop Inspect Reject Categories
209(1)
Develop Inspect Methods
209(2)
Causes for Rejecting at the Develop Inspection Stage
211(1)
Etch
212(1)
Wet Etching
212(5)
Etch Goals and Issues
212(1)
Incomplete Etch
212(1)
Overetch and Undercutting
213(1)
Selectivity
214(1)
Wet-Spray Etching
214(1)
Silicon Wet Etching
214(1)
Silicon Dioxide Wet Etching
215(1)
Aluminum-Film Wet Etching
216(1)
Deposited-Oxide Wet Etching
216(1)
Silicon Nitride Wet Etching
216(1)
Vapor Etching
217(1)
Dry Etch
217(6)
Plasma Etching
218(2)
Etch Rate
220(1)
Radiation Damage
220(1)
Selectivity
220(2)
Ion-Beam Etching
222(1)
Reactive Ion Etching
222(1)
Resist Effects in Dry Etching
223(1)
Resist Stripping
223(3)
Wet Chemical Stripping of Nonmetallized Surfaces
224(1)
Wet Chemical Stripping of Metallized Surfaces
225(1)
Dry Stripping
225(1)
Post--Ion Implant and Plasma Etch Stripping
226(1)
New Stripping Challenges
226(1)
Final Inspection
227(1)
Mask Making
227(2)
Summary
229(1)
Review Topics
229(4)
References
230(3)
10 Next Generation Lithography
233(36)
Introduction
233(1)
Challenges of Next Generation Lithography
233(8)
High-Pressure Mercury Lamp Sources
235(1)
Excimer Lasers
236(1)
Extreme Ultraviolet
236(1)
X-Rays
237(1)
Electron Beam or Direct Writing
238(2)
Numerical Aperture of a Lens
240(1)
Other Exposure Issues
241(3)
Variable Numerical Aperture Lenses
242(1)
Immersion Exposure System
242(1)
Amplified Resist
242(1)
Contrast Effects
243(1)
Other Resolution Challenges and Solutions
244(4)
Off-Axis Illumination
245(1)
Lens Issues and Reflection Systems
245(1)
Phase-Shift Masks
245(1)
Optical Proximity Corrected or Optical Process Correction
245(1)
Annular-Ring Illumination
246(1)
Pellicles
247(1)
Surface Problems
248(1)
Resist Light Scattering
248(1)
Subsurface Reflectivity
248(1)
Antireflective Coatings
249(3)
Standing Waves
249(2)
Planarization
251(1)
Photoresist Process Advances
252(12)
Multilayer Resist or Surface Imaging
252(2)
Silylation or DESIRE Process
254(1)
Polyimide Planarization Layers
255(1)
Etchback Planarization
256(1)
Dual-Damascene Process
256(1)
Chemical Mechanical Polishing
256(3)
Slurry
259(1)
Polishing Rates
259(1)
Planarity
260(1)
Post-CMP Clean
261(1)
CMP Tools
261(1)
CMP Summary
262(1)
Reflow
262(1)
Image Reversal
262(1)
Contrast Enhancement Layers
262(2)
Dyed Resists
264(1)
Improving Etch Definition
264(1)
Lift-Off Process
264(1)
Self-Aligned Structures
264(2)
Etch Profile Control
266(1)
Review Topics
266(3)
References
266(3)
11 Doping
269(30)
Introduction
269(1)
The Diffusion Concept
269(2)
Formation of a Doped Region and Junction
271(4)
The N-P Junction
272(1)
Doping Process Goals
273(1)
Graphical Representation of Junctions
273(1)
Concentration versus Depth Graphs
273(1)
Lateral Diffusion
273(2)
Same-Type Doping
275(1)
Diffusion Process Steps
275(1)
Deposition
275(3)
Lateral Diffusion
278(1)
Same-Type Doping
278(2)
Dopant Sources
278(2)
Drive-In Oxidation
280(1)
Oxidation Effects
281(1)
Introduction to Ion Implantation
281(2)
Concept of Ion Implantation
283(1)
Ion-Implantation System
284(7)
Implant Species Sources
284(1)
Ionization Chamber
284(1)
Mass Analyzing or Ion Selection
284(2)
Acceleration Tube
286(1)
Wafer Charging
286(1)
Beam Focus
287(1)
Neutral Beam Trap
287(1)
Beam Scanning
287(2)
End Station and Target Chamber
289(1)
Ion-Implant Masks
290(1)
Dopant Concentration in Implanted Regions
291(3)
Crystal Damage
292(1)
Annealing and Dopant Activation
292(1)
Channeling
293(1)
Evaluation of Implanted Layers
294(1)
Uses of Ion Implantation
295(2)
The Future of Doping
297(1)
Review Topics
297(2)
References
298(1)
12 Layer Deposition
299(34)
Introduction
299(3)
Film Parameters
301(1)
Chemical Vapor Deposition Basics
302(3)
Basic CVD System Components
303(2)
CVD Process Steps
305(1)
CVD System Types
305(1)
Atmospheric-Pressure CVD Systems
306(3)
Horizontal-Tube Induction-Heated APCVD
306(1)
Barrel Radiant-Induction-Heated APCVD
307(1)
Pancake Induction-Heated APCVD
307(1)
Continuous Conduction Heated APCVD
308(1)
Horizontal Conduction-Heated APCVD
309(1)
Low-Pressure Chemical Vapor Deposition
309(4)
Horizontal Conduction-Convection-Heated LPCVD
309(1)
Ultra-High Vacuum CVD
310(1)
Plasma-Enhanced CVD (PECVD)
310(2)
High-Density Plasma CVD
312(1)
Atomic Layer Deposition
313(2)
Vapor-Phase Epitaxy
315(1)
Molecular Beam Epitaxy
315(2)
Metalorganic CVD
317(1)
Deposited Films
318(1)
Deposited Semiconductors
318(1)
Epitaxial Silicon
318(6)
Polysilicon and Amorphous Silicon Deposition
324(1)
SOS and SOI
325(1)
Gallium Arsenide on Silicon
326(1)
Insulators and Dielectrics
326(3)
Silicon Dioxide
326(1)
Doped Silicon Dioxide
327(1)
Silicon Nitride
328(1)
High-k and Low-k Dielectrics
329(1)
Conductors
329(1)
Review Topics
329(4)
References
330(3)
13 Metallization
333(22)
Introduction
333(1)
Deposition Methods
333(1)
Single-Layer Metal Systems
334(1)
Multilevel Metal Schemes
335(1)
Conductors Materials
336(3)
Aluminum
336(1)
Aluminum-Silicon Alloys
336(1)
Aluminum-Copper Alloy
337(1)
Barrier Metals
338(1)
Refractory Metals and Refractory Metal Silicides
338(1)
Plugs
339(1)
Sputter Deposition
340(8)
Copper Dual-Damascene Process
345(1)
Low-k Dielectric Materials
345(1)
The Dual-Damascene Copper Process
346(2)
Barrier or Liner Deposition
348(1)
Seed Deposition
348(1)
Electrochemical Plating
348(1)
Chemical-Mechanical Processing
349(1)
CVD Metal Deposition
349(2)
Doped Polysilicon
349(1)
CVD Refractory Deposition
350(1)
Metal-Film Uses
351(1)
MOS Gate and Capacitor Electrodes
351(1)
Backside Metallization
351(1)
Vacuum Systems
351(2)
Dry Mechanical Pumps
352(1)
Turbomolecular Hi-Vac Pumps
352(1)
Review Topics
353(2)
References
353(2)
14 Process and Device Evaluation
355(38)
Introduction
355(1)
Wafer Electrical Measurements
356(2)
Resistance and Resistivity
356(1)
Resistivity Measurements
356(1)
Four-Point Probe
356(2)
Process and Device Evaluation
358(2)
Sheet Resistance
358(1)
Four-Point Probe Thickness Measurement
358(1)
Concentration or Depth Profile
359(1)
Secondary Ion Mass Spectrometry
359(1)
Physical Measurement Methods
360(1)
Layer Thickness Measurements
360(5)
Color
360(1)
Spectrophotometers or Reflectometry
361(2)
Ellipsometers
363(1)
Stylus (Surface Profilometers)
363(2)
Photoacoustic
365(1)
Gate Oxide Integrity Electrical Measurement
365(1)
Junction Depth
365(5)
Groove and Stain
365(2)
Scanning Electron Microscope Thickness Measurement
367(1)
Spreading Resistance Probe
367(1)
Secondary Ion Mass Spectrometry
367(1)
Scanning Capacitance Microscopy
368(1)
Critical Dimensions and Line-Width Measurements
369(1)
Optical Image-Shearing Dimension Measurement
369(1)
Shape Metrology and Optical Critical Dimension
370(1)
Contamination and Defect Detection
370(8)
1× Visual Surface Inspection Techniques
370(1)
1× Collimated Light
370(2)
1× Ultraviolet
372(1)
Microscope Techniques
372(4)
Automated In-Line Defect Inspection Systems
376(2)
General Surface Characterization
378(2)
Atomic Force Microscopy
378(2)
Scattrometry
380(1)
Contamination Identification
380(2)
Auger Electron Spectroscopy
380(1)
Electron Spectroscope for Chemical Analysis
381(1)
Time of Flight Secondary Ion Mass Spectrometry
381(1)
Evaluation of Stack Thickness and Composition
382(1)
Device Electrical Measurements
382(8)
Equipment
383(1)
Resistors
383(1)
Diodes
384(2)
Bipolar Transistors
386(1)
MOS Transistors
387(1)
Capacitance-Voltage Profiling
387(3)
Device Failure Analysis---Emission Microscopy
390(1)
Review Topics
390(3)
References
391(2)
15 The Business of Wafer Fabrication
393(24)
Introduction
393(1)
Moore's Law and the New Wafer-Fabrication Business
393(1)
Wafer-Fabrication Costs
394(8)
Overhead
395(1)
Materials
395(1)
Equipment
396(1)
Labor
397(1)
Production Cost Factors
397(1)
Yield
398(1)
Yield Improvements
398(1)
Yield and Productivity
399(2)
Book-to-Bill Ratio
401(1)
Cost of Ownership
402(1)
Automation
402(1)
Process Automation
402(1)
Wafer-Loading Automation
403(1)
Clustering
403(1)
Wafer-Delivery Automation
404(1)
Closed-Loop Control-System Automation
405(1)
Factory-Level Automation
405(2)
Equipment Standards
407(2)
Fab Floor Layout
407(1)
Batch versus Single-Wafer Processing
407(1)
Green Fabs
408(1)
Statistical Process Control
409(3)
Inventory Control
412(2)
Just-in-Time Inventory Control
413(1)
Quality Control and Certification---ISO 9000
414(1)
Line Organization
414(1)
Review Topics
415(2)
References
416(1)
16 Introduction to Devices and Integrated Circuit Formation
417(34)
Introduction
417(1)
Semiconductor-Device Formation
417(17)
Resistors
418(2)
Capacitors
420(2)
Diodes
422(2)
Transistors
424(3)
Field-Effect Transistors
427(7)
Alternatives to MOSFET Scaling Challenges
434(2)
Conductors
434(2)
Integrated-Circuit Formation
436(9)
Bipolar Circuit Formation
437(4)
MOS Integrated Circuit Formation
441(4)
Bi-MOS
445(1)
Silicon on Insulator Isolation
445(1)
Superconductors
446(3)
Microelectromechanical Systems
447(1)
Strain Gauges
447(1)
Batteries
447(1)
Light-Emitting Diodes
447(1)
Optoelectronics
448(1)
Solar Cells
448(1)
Temperature Sensing
448(1)
Acoustic Wave Devices
448(1)
Review Topics
449(2)
References
449(2)
17 Process and Device Evaluation
451(14)
Introduction
451(1)
Circuit Basics
451(3)
Integrated Circuit Types
454(8)
Logic Circuits
454(3)
Memory Circuits
457(4)
Redundancy
461(1)
The Next Generation
462(2)
Review Topics
464(1)
References
464(1)
18 Packaging
465(38)
Introduction
465(1)
Chip Characteristics
466(2)
Package Functions and Design
468(5)
Substantial Lead System
468(1)
Physical Protection
468(1)
Environmental Protection
469(1)
Heat Dissipation
469(1)
Common Package Parts
469(2)
Cleanliness and Static Control
471(1)
Basic Bonding Processes
472(1)
Wire Bonding Process
473(9)
Prebonding Wafer Preparation
473(1)
Die Separation
474(1)
Die Pick and Place
475(1)
Die Inspection
476(1)
Die Attach
476(1)
Wire Bonding
477(3)
Tape Automated Bonding Process
480(1)
Bump or Ball Flip-Chip Bonding
480(2)
Example Bump or Ball Process
482(9)
Copper Metallization (Damascene) Bump Bonding
482(1)
Reflow
483(1)
Die Separation and Die Pick and Place
483(1)
Alignment of Die to Package
483(1)
Attachment to Package (or Substrate)
483(1)
Deflux
483(1)
Underfillment
484(1)
Encapsulation
484(1)
Postbonding and Preseal Inspection
484(1)
Sealing Techniques
484(2)
Lead Plating
486(1)
Plating Process Flows
487(1)
Lead Trimming
487(1)
Deflashing
488(1)
Package Marking
488(1)
Final Testing
489(1)
Environmental Tests
489(1)
Electrical Testing
490(1)
Burn-In Tests
491(1)
Package Design
491(8)
Metal Cans
492(1)
Pin Grid Arrays
493(1)
Ball-Grid Arrays or Flip-Chip Ball-Grid Arrays
493(1)
Quad Packages
493(1)
Thin Packages
494(1)
Chip-Scale Packages
494(1)
Lead on Chip
494(1)
Three-Dimensional Packages
494(1)
Stacking Die Techniques
495(2)
Three-Dimensional Enabling Technologies
497(1)
Hybrid Circuits
498(1)
Multichip Modules
498(1)
The Known Good Die Problem
498(1)
Package Type or Technology Summary
499(1)
Package or PCB Connections
499(1)
Bare Die Techniques and Blob Top
500(1)
Review Topics
500(3)
References
501(2)
Glossary 503(20)
Index 523
Peter Van Zant is the Principal of Peter Van Zant Associates, a semiconductor manufacturing consulting and training company, and the author of all three previous editions of this widely read book. He has over 35 years in the semiconductor industry, working at IBM, Texas Instruments, and National Semiconductors. He resides in Grass Valley, California.