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Microcircuit Engineering, Proceedings of the International Conference on Microlithography, Rome, Italy, 17-19 September 1991 [Kõva köide]

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  • Formaat: Hardback, 598 pages, kõrgus: 230 mm
  • Ilmumisaeg: 31-Mar-1992
  • Kirjastus: Elsevier Science Ltd
  • ISBN-10: 0444895094
  • ISBN-13: 9780444895097
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Microcircuit Engineering, Proceedings of the International Conference on Microlithography, Rome,  Italy, 17-19 September 1991
  • Formaat: Hardback, 598 pages, kõrgus: 230 mm
  • Ilmumisaeg: 31-Mar-1992
  • Kirjastus: Elsevier Science Ltd
  • ISBN-10: 0444895094
  • ISBN-13: 9780444895097
Teised raamatud teemal:
The 17th International Conference on Microlithography focused on the present dynamic international development of microfabrication using lithography and the related technologies. Bringing together leading international experts in the microcosm of modern semiconductor technology, the 7 invited and 109 contributed papers give an ongoing overview of the latest trends in the fabrication and application of microstructures.
Abbreviated. Electron beam lithography. Progress in electron beam cell
projection lithography (N. Saitou et al.). High-contrast marks for e-beam
direct write made by reactive ion etching (M.N. Webster et al.). Direct
measurement of thermoeffect influence on resist sensitivity in electron beam
lithography (S.V. Babin et al.). Optical lithography. Deep-UV lithography for
64 megabit DRAM applications (Invited Paper) (M.C. Tipton, M.A. Hanratty).
Registration accuracy in submicron devices (Invited Paper) (G. Potenza).
Microlithography on complex-shaped surface (Yu.G. Geondzhian et al.). X-ray
lithography. Current status and problems of synchrotron radiation lithography
(Invited Paper) (H. Yoshihara). Low-stress gold electroplating for X-ray
masks (W. Chu et al.). Ion beam lithography. Progress in ion projection
lithography (Invited Paper) (A. Chalupka et al.). Focused ion beam repair of
clear and opaque defects in X-ray masks (P.D. Prewett et al.). Resists.
Lithographic properties of chemically amplified resists based on copolymers
of 4-t-butoxycarbonyloxystyrene and sulfur dioxide (A.E. Novembre et al.).
Enhanced photoresist focus latitude through the use of statistical design
experimentation in photoresist formulation optimization (K. Bell et al.).
Pattern transfer. Contrast enhancement of the resist latent image using
exposure induced absorption amplification - Fundamentals, modelling, and
applicability (R. Pforr et al.). Improvement of resist mask plasma etching
durability by plasma chemical polymerization (V.F. Limanova et al.). Process
modelling. A numerical approach to the solution of the Boltzmann transport
equation for the analysis of hot-electron effects in semiconductors (Invited
Paper) (A. Gnudi et al.). Simulation of optical lithography and inspection
(Invited Paper) (A.R. Neureuther). Effect of resist development process on
the determination of proximity function in electron lithography (S.V. Babin,
A.A. Svintsov). Inspection and Testing. Focused ion beam repair of integrated
circuits (P.D. Prewett et al.). Improved minority carrier lifetime
performance in silicon for advanced applications (R.J. Falster). Laser
Processing. Laser processing of integrated optical components (R. Scarmozzino
et al.). The laser-plotter: A versatile lithographic tool for integrated
optics and microelectronics (C. Arnone). Manufacturing science and
fabrication. Microsystems: Current status and coming opportunities (Invited
Paper) (E. Obermeier). The application of ohmic contacts to nanometric
structures (P.A.F. Herbert et al.). T-gate and airbridge fabrication on MMICs
by combining multivoltage electron-beam lithography and ion-beam lithography
(R.G. Woodham et al.). Author Index.