| Preface |
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xiii | |
| About the Author |
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xv | |
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Electrons and Holes in Semiconductors |
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1 | (34) |
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Silicon Crystal Structure |
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1 | (3) |
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Bond Model of Electrons and Holes |
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4 | (4) |
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8 | (3) |
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Semiconductors, Insulators, and Conductors |
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11 | (1) |
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12 | (3) |
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15 | (1) |
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Thermal Equilibrium and the Fermi Function |
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16 | (3) |
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Electron and Hole Concentrations |
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19 | (6) |
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General Theory of n and p |
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25 | (3) |
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Carrier Concentrations at Extremely High and Low Temperatures |
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28 | (1) |
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29 | (6) |
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30 | (3) |
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33 | (1) |
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34 | (1) |
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Motion and Recombination of Electrons and Holes |
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35 | (24) |
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35 | (3) |
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38 | (8) |
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46 | (1) |
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Relation Between the Energy Diagram and V, & |
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47 | (1) |
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Einstein Relationship Between D and μ |
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48 | (2) |
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Electron-Hole Recombination |
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50 | (2) |
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52 | (1) |
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Quasi-Equilibrium and Quasi-Fermi Levels |
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52 | (2) |
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54 | (5) |
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56 | (2) |
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58 | (1) |
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58 | (1) |
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Device Fabrication Technology |
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59 | (30) |
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Introduction to Device Fabrication |
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60 | (1) |
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61 | (3) |
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64 | (4) |
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Pattern Transfer---Etching |
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68 | (2) |
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70 | (3) |
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73 | (2) |
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75 | (5) |
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Interconnect---The Back-End Process |
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80 | (2) |
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Testing, Assembly, and Qualification |
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82 | (1) |
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Chapter Summary---A Device Fabrication Example |
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83 | (6) |
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85 | (2) |
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87 | (1) |
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88 | (1) |
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PN and Metal-Semiconductor Junctions |
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89 | (68) |
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89 | (1) |
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Building Blocks of the PN Junction Theory |
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90 | (4) |
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94 | (3) |
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Reverse-Biased PN Junction |
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97 | (1) |
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Capacitance-Voltage Characteristics |
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98 | (2) |
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100 | (5) |
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Carrier Injection Under Forward Bias---Quasi-Equilibrium Boundary Condition |
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105 | (2) |
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Current Continuity Equation |
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107 | (2) |
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Excess Carriers in Forward-Biased PN Junction |
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109 | (3) |
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PN Diode IV Characteristics |
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112 | (3) |
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115 | (1) |
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Small-Signal Model of the Diode |
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116 | (1) |
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Application to Optoelectronic Devices |
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117 | (1) |
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117 | (7) |
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Light-Emitting Diodes and Solid-State Lighting |
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124 | (4) |
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128 | (5) |
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133 | (1) |
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Metal-Semiconductor Junction |
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133 | (1) |
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133 | (4) |
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Thermionic Emission Theory |
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137 | (1) |
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138 | (2) |
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Applications of Schottky Diodes |
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140 | (1) |
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Quantum Mechanical Tunneling |
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141 | (1) |
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142 | (3) |
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145 | (12) |
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148 | (8) |
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156 | (1) |
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156 | (1) |
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157 | (38) |
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Flat-Band Condition and Flat-Band Voltage |
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158 | (2) |
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160 | (1) |
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161 | (1) |
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Threshold Condition and Threshold Voltage |
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162 | (2) |
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Strong Inversion Beyond Threshold |
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164 | (4) |
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168 | (4) |
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Oxide Charge---A Modification to Vfb and Vt |
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172 | (2) |
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Poly-Si Gate Depletion-Effective Increase in Tox |
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174 | (2) |
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Inversion and Accumulation Charge-Layer Thicknesses---Quantum Mechanical Effect |
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176 | (3) |
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CCD Imager and CMOS Imager |
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179 | (5) |
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184 | (11) |
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186 | (7) |
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193 | (1) |
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193 | (2) |
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195 | (64) |
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Introduction to the MOSFET |
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195 | (3) |
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Complementary MOS (CMOS) Technology |
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198 | (2) |
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Surface Mobilities and High-Mobility FETs |
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200 | (7) |
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MOSFET Vt, Body Effect, and Steep Retrograde Doping |
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207 | (2) |
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209 | (1) |
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210 | (4) |
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CMOS Inverter---A Circuit Example |
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214 | (5) |
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219 | (1) |
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MOSFET IV Model with Velocity Saturation |
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220 | (5) |
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Parasitic Source-Drain Resistance |
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225 | (1) |
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Extraction of the Series Resistance and the Effective Channel Length |
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226 | (2) |
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Velocity Overshoot and Source Velocity Limit |
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228 | (1) |
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229 | (1) |
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High-Frequency Performance |
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230 | (2) |
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232 | (6) |
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SRAM, DRAM, Nonvolatile (Flash) Memory Devices |
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238 | (7) |
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245 | (14) |
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247 | (9) |
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256 | (1) |
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257 | (2) |
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MOSFETs in ICs-Scaling, Leakage, and Other Topics |
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259 | (32) |
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Technology Scaling-For Cost, Speed, and Power Consumption |
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259 | (4) |
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Subthreshold Current---``Off'' Is Not Totally ``Off'' |
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263 | (3) |
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Vt Roll-Off---Short-Channel MOSFETs Leak More |
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266 | (4) |
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Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage |
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270 | (2) |
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272 | (2) |
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Shallow Junction and Metal Source/Drain MOSFET |
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274 | (2) |
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Trade-Off Between /on and /off and Design for Manufacturing |
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276 | (1) |
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Ultra-Thin-Body SOI and Multigate MOSFETs |
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277 | (5) |
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282 | (1) |
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Device and Process Simulation |
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283 | (1) |
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MOSFET Compact Model for Circuit Simulation |
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284 | (1) |
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285 | (6) |
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286 | (2) |
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288 | (1) |
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289 | (2) |
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291 | (34) |
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291 | (2) |
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293 | (4) |
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297 | (1) |
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298 | (4) |
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Base-Width Modulation by Collector Voltage |
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302 | (2) |
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304 | (2) |
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Transit Time and Charge Storage |
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306 | (4) |
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310 | (2) |
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312 | (2) |
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314 | (2) |
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Model for Large-Signal Circuit Simulation |
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316 | (2) |
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318 | (7) |
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319 | (4) |
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323 | (1) |
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323 | (2) |
| Appendix I Derivation of the Density of States |
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325 | (4) |
| Appendix II Derivation of the Fermi-Dirac Distribution Function |
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329 | (4) |
| Appendix III Self-Consistencies of Minority Carrier Assumptions |
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333 | (4) |
| Answers to Selected Problems |
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337 | (4) |
| Index |
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341 | |
