Strain has a tremendous effect on the morphology and composition of heteroepitaxial semiconductor thin films. Recent progress in strained island formation, and in the morphological and compositional instabilities induced by heteroepitaxial stress, has led to new theoretical and experimental advances, as well as to promising materials for various optoelectronic applications. This book brings together research groups looking at important advances and breaking news in the field. The book centers around mechanisms rather than materials, thus papers in different semiconductor systems, including SiGe, III-V, nitrides, or II-VI semiconductors, are presented. Issues on growth, characterization, and modeling of morphological and compositional nonuniformities are also addressed, as are devices based on these spontaneous structures. Topics include: surface dynamics - atomistic processes; growth on patterned, high-index and vicinal substrates; quantum dots and wires; interdiffusion and segregation; band structure, electronic properties and devices; morphology and microstructure; and nitrides
