Preface |
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xxiii | |
Acknowledgments |
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xxvii | |
About the Author |
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xxix | |
About the Book |
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xxxi | |
Acronyms and Abbreviations |
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xxxiii | |
Chemical Symbols |
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xxxix | |
Mathematical Symbols |
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xliii | |
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Part I Preliminaries and Nanocrystalline Silicon Photovoltaics |
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Chapter 1 Solar Cell Basics |
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3 | (26) |
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1.1 Progression from Fossil Fuels to Renewable Energy Sources |
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3 | (2) |
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1.1.1 Fossil Fuels, the Lifeblood of Modern Civilization |
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3 | (1) |
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1.1.2 Evils and Limitations of Fossil Fuels |
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3 | (1) |
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1.1.2.1 Land and Habitat Destruction |
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3 | (1) |
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1.1.2.2 Greenhouse Effect |
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3 | (1) |
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3 | (1) |
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1.1.2.4 Depletion of Fossil Fuels |
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3 | (1) |
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1.1.3 Promises of Solar Energy for Sustainable Development |
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4 | (1) |
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1.2 Solar Power Generating System |
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5 | (1) |
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1.2.1 Photovoltaic Power System |
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5 | (1) |
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1.2.2 Concentrated Power System |
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5 | (1) |
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1.3 Photovoltaic Power System |
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5 | (1) |
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1.3.1 Off-Grid (Stand-Alone or Grid Fallback) Solar Power System |
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5 | (1) |
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1.3.2 Grid-Tie Solar Power System |
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5 | (1) |
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1.4 Construction and Working of a Solar Cell |
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6 | (2) |
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1.5 Optoelectrical Characteristics and Parameters of a Solar Cell |
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8 | (4) |
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1.5.1 Short-Circuit Current (ISC) |
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8 | (1) |
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1.5.2 Open-Circuit Voltage (VOC) |
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8 | (1) |
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1.5.3 Maximum Power (PM) and Maximum Power Point (PMPP) |
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9 | (2) |
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11 | (1) |
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1.5.5 Power Conversion Efficiency |
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11 | (1) |
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1.5.6 AM0 and AM1.5 Solar Spectra |
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11 | (1) |
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1.5.7 Shockley-Queisser Detailed Balance Limit of Efficiency of P-N Junction Solar Cell |
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12 | (1) |
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1.6 Solar Cell Generations |
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12 | (2) |
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12 | (1) |
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12 | (2) |
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14 | (1) |
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1.7 Solar Cell Technologies |
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14 | (10) |
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1.7.1 Monocrystalline Silicon Solar Cell |
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14 | (1) |
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1.7.2 Gallium Arsenide Solar Cell |
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15 | (1) |
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1.7.3 Amorphous Silicon Solar Cell |
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16 | (1) |
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1.7.4 Silicon Heterojunction Solar Cell |
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16 | (1) |
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1.7.5 Cadmium Telluride Solar Cell |
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17 | (1) |
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1.7.6 Cadmium Indium Gallium Selenide (CIGSe) Solar Cell |
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18 | (2) |
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1.7.7 Perovskite Solar Cell |
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20 | (2) |
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22 | (2) |
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24 | (1) |
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1.7.10 Dye-Sensitized Solar Cell |
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24 | (1) |
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1.8 Discussion and Conclusions |
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24 | (5) |
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27 | (2) |
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Chapter 2 Nanotechnology Fundamentals |
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29 | (20) |
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29 | (1) |
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29 | (1) |
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29 | (3) |
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29 | (1) |
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2.3.2 Buckminsterfullerene (C60) |
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30 | (1) |
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30 | (2) |
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32 | (5) |
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32 | (1) |
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33 | (4) |
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37 | (4) |
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37 | (1) |
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38 | (1) |
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39 | (2) |
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2.6 Scope for Nanotechnology Application in Solar Cells and Organizational Structure of the Book |
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41 | (4) |
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2.6.1 Use of Nanocrystalline Silicon in Solar Cells |
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41 | (1) |
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2.6.2 Nanotexturing Solar Cell Surface |
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41 | (1) |
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2.6.3 Using Plasmonic Nanostructures for Maximizing Light Coupling in Solar Cells |
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42 | (1) |
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2.6.4 Further Approaches to Light Incoupling in Solar Cells |
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43 | (1) |
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2.6.5 Sensitizing Metal Oxide Semiconductor (TiO2) Nanoparticles with Dye |
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43 | (1) |
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2.6.6 Promises of 2D Perovskites Nanomaterials |
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43 | (1) |
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2.6.7 Applications of Carbon Nanostructures |
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44 | (1) |
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2.6.8 Applications of Nanowires |
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44 | (1) |
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2.6.9 Applications of Quantum Wells |
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45 | (1) |
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2.6.10 Applications of Quantum Dots |
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45 | (1) |
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2.7 Discussion and Conclusions |
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45 | (4) |
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48 | (1) |
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Chapter 3 Nanocrystalline Silicon-Based Solar Cells |
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49 | (18) |
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3.1 Nanocrystalline, Polycrystalline, and Amorphous Silicon Phases as Photovoltaic Cell Materials |
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49 | (1) |
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3.1.1 Nanocrystalline Silicon |
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49 | (1) |
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3.1.2 Nanocrystalline vs. Polysilicon |
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49 | (1) |
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50 | (1) |
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3.1.4 Advantages of Nanocrystalline Silicon over Amorphous and Polysilicon |
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50 | (1) |
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3.2 Plasma-Enhanced Chemical Vapor Deposition of a-Si:H and nc-Si:H Films |
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50 | (1) |
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3.2.1 Effect of Hydrogen Dilution |
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50 | (1) |
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3.2.2 High-Pressure Depletion (HPD) Regime |
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51 | (1) |
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3.3 Silicon Heterojunction (SHJ) Solar Cell |
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51 | (1) |
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3.3.1 Fabrication of the Solar Cell |
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51 | (1) |
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52 | (1) |
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3.3.3 Back Surface Field (BSF) |
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52 | (1) |
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3.4 Front- and Rear-Emitter Silicon Heterojunction Solar Cell |
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52 | (3) |
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3.4.1 Front-Emitter Solar Cell |
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52 | (1) |
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3.4.2 Rear-Emitter Solar Cell |
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52 | (3) |
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3.4.3 Advantages of Rear-Emitter Design |
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55 | (1) |
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3.5 Replacement of Amorphous Silicon by Nanocrystalline Silicon as Electron/Hole Collectors |
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55 | (2) |
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3.5.1 Reasons for Replacement |
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55 | (1) |
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3.5.2 Effects of Replacement |
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55 | (2) |
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3.6 Nanocrystalline N-Type Silicon Oxide Films as Front Contacts in Rear-Emitter Solar Cells |
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57 | (1) |
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3.6.1 Effect of Refractive Index Matching of Two Optical Media upon Reflection of Light at Their Interface |
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57 | (1) |
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3.6.2 Comparing Reflectances at the Interfaces a-Si:H/TCO, nc-Si:H/TCO, and nc-SiO2:H/TCO |
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57 | (1) |
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3.6.3 Difficulty in Deposition of Thin nc-SiO2:H Film Over (I)a-Si:H Layer |
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58 | (1) |
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3.7 Nanocrystalline Silicon Thin-Film Solar Cell on Honeycomb-Textured Substrate |
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58 | (1) |
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3.8 Discussion and Conclusions |
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58 | (9) |
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62 | (5) |
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Part II Nanotechnological Approaches to Sunlight Harvesting |
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Chapter 4 Nanotextured-Surface Solar Cells |
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67 | (40) |
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4.1 Optical Losses in a Solar Cell and Loss-Reduction Approaches |
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67 | (1) |
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67 | (1) |
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4.1.2 Optical Loss Reduction by Optical Transmittance Enhancement |
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67 | (1) |
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4.1.3 Optical Loss Reduction by Optical Path Lengthening |
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67 | (1) |
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4.2 Optical Transmittance Enhancement by Nanotexturing |
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68 | (4) |
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4.2.1 Reflectance and Transmittance Equations |
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68 | (2) |
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4.2.2 Effects of Sizes of Structures of the Textured Interface Morphology on its Reflectance |
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70 | (2) |
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4.3 Nanotextured Surface Properties, Examples in Nature, and Comparison with Microtexturing |
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72 | (2) |
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4.3.1 Self-Cleaning Property of Nanotextured Surfaces |
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72 | (1) |
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4.3.2 Moth-Eye Nanostructured Surfaces |
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72 | (1) |
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4.3.3 Nanotexturing vs. Microtexturing |
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73 | (1) |
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4.4 Nanotextured Silicon Solar Cell Fabrication |
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74 | (21) |
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4.4.1 Inverted Nanopyramid Crystalline Silicon Solar Cell by a Maskless Technique (η = 7.12%) |
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74 | (4) |
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4.4.2 Ultrathin (Sub-10μum) Silicon Solar Cell with Silicon Nanocones and All Contacts on the Backside (η = 13.7%) |
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78 | (1) |
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4.4.2.1 Carrier Recombination Problems Faced in a Front-Emitter Solar Cell |
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78 | (1) |
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4.4.2.2 Solving the Recombination Problem |
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78 | (1) |
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4.4.2.3 Fabrication of the Solar Cell |
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78 | (6) |
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4.4.2.4 Planar Cell and Nanocone Cell Parameters |
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84 | (1) |
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4.4.3 10-u.m-Thick Periodic Nanostructured Crystalline Silicon Solar Cell (η = 15.7%) |
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84 | (9) |
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4.4.4 Two-Scale (Micro/Nano) Surface Textured Crystalline Silicon Solar Cell (η = 17.5%) |
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93 | (2) |
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4.5 Nanotextured Solution-Processed Perovskite Solar Cell (η = 19.7%) |
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95 | (8) |
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4.6 Discussion and Conclusions |
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103 | (4) |
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105 | (2) |
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Chapter 5 Plasmonic-Enhanced Solar Cells |
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107 | (28) |
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5.1 Plasma, Plasmon, and Plasmonics |
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107 | (1) |
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107 | (1) |
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107 | (1) |
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107 | (1) |
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5.2 Surface Plasmons, Localized Surface Plasmons, and Surface Plasmon Polaritons |
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107 | (4) |
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107 | (1) |
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5.2.2 Localized Surface Plasmons |
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107 | (1) |
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5.2.3 Surface Plasmon Polaritons |
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108 | (1) |
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5.2.4 Localized Surface Plasmon Resonance (LSPR) and Propagating Surface Plasmon Resonance (PSPR) |
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108 | (1) |
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108 | (1) |
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109 | (2) |
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5.3 Absorption and Scattering of Light |
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111 | (3) |
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5.3.1 Absorption of Light |
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111 | (1) |
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5.3.2 Scattering of Light |
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112 | (1) |
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5.3.3 Absorption and Scattering Cross Sections of a Particle |
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112 | (2) |
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5.4 Surface Plasmon Effects in Solar Cells |
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114 | (5) |
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5.4.1 LSPR with Metal Nanoparticles |
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114 | (1) |
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5.4.1.1 Device Structures Used |
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114 | (1) |
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5.4.1.2 Resonance Frequency Formula for LSPR |
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114 | (3) |
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5.4.1.3 Red Shifting of Resonance Frequency by Embedded Metal Nanoparticles |
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117 | (1) |
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5.4.1.4 Intensification of Local Electric Field of Light at Resonance |
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117 | (1) |
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5.4.1.5 Enhancement of Scattering of Light at Resonance |
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118 | (1) |
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5.4.2 PSPR at Metal-Semiconductor Interface |
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118 | (1) |
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5.4.2.1 Necessity of Coupling Medium for Exciting Surface Plasmon Polaritons |
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118 | (1) |
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5.4.2.2 Approaches for Matching Momenta |
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118 | (1) |
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5.5 Plasmonic-Enhanced GaAs Solar Cell Decorated with Ag Nanoparticles (η = 5.9%) |
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119 | (6) |
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5.6 Plasmonic-Enhanced Organic Solar Cells |
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125 | (3) |
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5.6.1 LSPR Effect of Gold Nanospheres in the Buffer Layer (η = 2.36%) |
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125 | (1) |
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5.6.2 Combined Surface Plasmon Effects from Ag Nanodisks in Hole Transport Layer and ID-Imprinted Al Grating of a Bulk Heterojunction Solar Cell (η = 3.59%) |
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126 | (1) |
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5.6.3 Multiple Effects of Au Nanoparticles Embedded in the Buffer Layer of Inverted Bulk Heterojunction Solar Cell (η = 7.86%) |
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127 | (1) |
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5.7 Plasmonic-Enhanced Perovskite Solar Cells |
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128 | (3) |
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5.7.1 Reduced Exciton Binding Energy Effect in Perovskite Solar Cell with Core-Shell Metal Nanoparticles (η = 11.4%) |
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128 | (1) |
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5.7.2 LSPR Effect of Gold Nanorods in the Electron Transport Layer of Inverted Perovskite Solar Cell (η = 13.7%) |
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128 | (3) |
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5.8 Discussion and Conclusions |
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131 | (4) |
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133 | (2) |
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Chapter 6 Optically Improved Nanoengineered Solar Cells |
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135 | (28) |
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6.1 Introspection on Light Management in Solar Cells |
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135 | (1) |
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6.1.1 Antireflection Coating |
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135 | (1) |
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6.1.2 Micropy ram id-Like Texturing by Wet-Etching in Alkaline Solutions |
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135 | (1) |
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6.1.3 Nanopy ram id-like Texturing by Lithographical Techniques |
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135 | (1) |
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6.1.4 Plasmonic Effects of Metal Nanoparticles or Thin Films |
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135 | (1) |
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6.1.5 Other Ways of Light Trapping |
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136 | (1) |
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6.2 Ultrathin GaAs Absorber (205nm) Solar Cell with TiO2/Ag Nanostructured Back Mirror |
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136 | (7) |
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6.2.1 Justification for Thinning of the Absorber Layer Together with Advanced Light Loss Reduction Technique |
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137 | (1) |
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6.2.2 Multiresonant Absorption of Light |
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137 | (1) |
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6.2.3 Location and Geometrical Parameters of the Nanostructured Mirror |
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137 | (1) |
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6.2.4 Fabrication and Performance of the Solar Cell |
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137 | (6) |
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6.3 Ultrathin CIGSe Absorber (460 nm) Solar Cell with Dielectric Nanoparticles |
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143 | (6) |
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6.3.1 Structure of the Solar Cell |
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143 | (2) |
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6.3.2 Drawbacks of Plasmonic Metal Nanoparticles |
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145 | (1) |
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6.3.3 Scattering Properties of Dielectric Nanoparticles |
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145 | (1) |
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6.3.4 Fabrication of the Solar Cell with Silica Dielectric Nanoparticles at the Rear Surface |
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145 | (4) |
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6.3.5 Solar Cell with Silica Nanoparticles vs. Flat Solar Cell without Silica Nanoparticles |
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149 | (1) |
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6.3.6 Solar Cell with TiO2 Nanoparticles on the Front Surface |
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149 | (1) |
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6.4 Periodic Nanohole Array Solar Cell |
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149 | (4) |
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6.4.1 Positive and Negative Textures |
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149 | (1) |
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6.4.2 Nanowires and Nanopores |
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149 | (1) |
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6.4.3 Fabrication of Nanohole Array Solar Cell |
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149 | (4) |
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6.5 Random Nanohole Array Solar Cell |
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153 | (2) |
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6.5.1 Fabrication of Random Nanohole Array |
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153 | (2) |
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6.5.2 Fabrication and Parameters of Solar Cell |
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155 | (1) |
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6.6 Silicon Nanohole/Organic Semiconductor Heterojunction Hybrid Solar Cell |
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155 | (3) |
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6.6.1 Fabrication of Hybrid Solar Cell |
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155 | (3) |
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6.6.2 Parameters of the Solar Cell |
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158 | (1) |
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6.7 Discussion and Conclusions |
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158 | (5) |
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160 | (3) |
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Part III Electrochemical Photovoltaics Using Nanomaterials |
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Chapter 7 Dye-Sensitized Solar Cells |
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163 | (22) |
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7.1 Construction and Working Principle of a Dye-Sensitized Solar Cell (DSSC) |
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163 | (2) |
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7.1.1 The Nanoconstituent of the Cell |
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163 | (1) |
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163 | (1) |
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163 | (1) |
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7.1.4 Mimicking the Natural Photosynthesis Process |
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163 | (2) |
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165 | (4) |
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7.2.1 Transparent Conductive Substrate |
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165 | (1) |
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7.2.2 Nanostructured Semiconductor Working Electrode (Photoanode) |
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165 | (1) |
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7.2.3 Dye (Photosensitizer) |
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165 | (1) |
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7.2.3.1 Naturally Occurring Dyes |
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166 | (1) |
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7.2.3.2 Metal Complex Sensitizers |
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166 | (1) |
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7.2.3.3 Metal-Free Organic Dyes |
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167 | (1) |
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167 | (1) |
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7.2.4.1 Tasks Performed by the Electrolyte |
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167 | (1) |
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7.2.4.2 Essential Properties of the Electrolyte |
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167 | (1) |
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7.2.4.3 Liquid Electrolytes |
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167 | (1) |
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7.2.4.4 Solid and Quasisolid Electrolytes |
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168 | (1) |
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7.2.5 Counter Electrode (CE) |
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169 | (1) |
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7.3 Forward and Backward Electron Transfer Processes in DSSC |
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169 | (4) |
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7.3.1 Forward Electron Transfer Processes |
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169 | (1) |
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7.3.1.1 Receipt and Absorption of Sunlight by the Dye and Promotion of an Electron in the Dye from Its HOMO to the LUMO (Ground State to Excited State) |
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169 | (1) |
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7.3.1.2 Injection of an Electron from the LUMO of the Dye to the Conduction Band of the Semiconductor (TiO2): Charge Separation |
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170 | (2) |
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7.3.1.3 Diffusion of the Electron through the TiO2 Nanonetwork to Reach the TCO Layer |
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172 | (1) |
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7.3.1.4 Flow of the Electron through the External Circuit Reaching the Counter Electrode |
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172 | (1) |
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7.3.1.5 Reduction of I3 Ion in the Electrolyte to I-Ion by the Arriving Electron at the Counter Electrode |
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172 | (1) |
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7.3.1.6 Acceptance of an Electron by the Dye From the I-Ion in the Electrolyte, Restoring It to Its Original State |
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172 | (1) |
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7.3.1.7 Diffusion of I3-Ion Mediator towards the Counter Electrode and Its Reduction to I Ion by Receiving an Electron from the External Circuit Recovering Its Initial State |
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173 | (1) |
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7.3.2 Backward Electron Transfer Processes: Loss Mechanisms |
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173 | (1) |
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7.4 Effect of Doping the TiO2 Photoanode Film with Gold Nanoparticles on DSSC Performance |
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173 | (2) |
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7.4.1 Synthesis of Au Nanoparticles |
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174 | (1) |
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7.4.2 TiO2 Film Deposition |
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174 | (1) |
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7.4.3 Sensitization of TiO2 Film with Dye |
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175 | (1) |
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7.4.4 Counter Electrode Fitting and Assembly of the Solar Cell |
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175 | (1) |
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7.4.5 Characterization of Solar Cell |
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175 | (1) |
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7.4.6 Dependence of Solar Cell Efficiency on Nanoparticle Dimensions and Shape |
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175 | (1) |
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7.5 Effect of Inclusion of Broadband Near-Infrared Upconversion Nanoparticles (UCNPs) in the TiO2 Photoanode of DSSC on Its Power Conversion Efficiency |
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175 | (3) |
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7.5.1 How Upconversion Nanoparticles Assist in Utilization of Low-Energy Photons? |
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175 | (2) |
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7.5.2 Preparation of Upconversion Nanoparticles |
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177 | (1) |
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7.5.3 Preparation of 1R783 Dye-Sensitized Upconversion Nanoparticles |
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177 | (1) |
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7.5.4 Reason for Sensitizing the Upconversion Nanoparticles with IR783 Dye |
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177 | (1) |
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7.5.5 Making the N719 Dye-Sensitized TiO2 Photoanode |
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177 | (1) |
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7.5.6 Deposition of IR783 DSUNPs on N719 Dye-Sensitized TiO2 Photoanode |
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177 | (1) |
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7.5.7 Making the Counter Electrode of Platinized FTO Glass |
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177 | (1) |
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7.5.8 Sealing the IR783 DSUNPs@N719 Dye-Sensitized TiO2 Photoanode with Counter Electrode |
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177 | (1) |
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7.5.9 DSUCNPs-Sensitized DSSC Testing |
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177 | (1) |
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7.6 Discussion and Conclusions |
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178 | (7) |
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180 | (5) |
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Part IV Photovoltaics with 2D Perovskites and Carbon Nanomaterials |
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Chapter 8 2D Perovskite and 2D/3D Multidimensional Perovskite Solar Cells |
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185 | (22) |
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185 | (1) |
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8.1.1 Favorable Properties of 3D Perovskites for Solar Cell Fabrication |
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185 | (1) |
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8.1.2 Shortcomings of 3D Perovskites for Use in Solar Cells |
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185 | (1) |
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186 | (6) |
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8.2.1 What Happens When the A-Site Cation Is Large in Size? |
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186 | (5) |
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8.2.2 2D Perovskites as a Promising Option |
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191 | (1) |
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8.2.3 Inferior Aspects of 2D Perovskites to 3D Perovskites |
|
|
191 | (1) |
|
8.2.4 The Two Routes to Success |
|
|
192 | (1) |
|
8.3 2D Perovskite Solar Cells |
|
|
192 | (5) |
|
8.3.1 PbBr2-Incorporated 2D Perovskite Solar Cell (η = 12.19%) |
|
|
192 | (2) |
|
8.3.2 2D GA2M A4Pb5I16 Perovskite Solar Cell Interface Engineered with GABr (η = 19.3%) |
|
|
194 | (1) |
|
8.3.3 FA-Based 2D Perovskite Solar Cell (η = 21.07%) |
|
|
195 | (2) |
|
8.4 2D/3D Perovskite Solar Cells |
|
|
197 | (5) |
|
8.4.1 2D/3D (HOOC(CH2)4NH3)2PbI4/CH3NH3PbI3 Perovskite Interface Engineered Solar Cell (η = 14.6%) |
|
|
197 | (1) |
|
8.4.2 2D Perovskite-Encapsulated 3D Perovskite Solar Cell (η = 16.79%) |
|
|
198 | (2) |
|
8.4.3 Hole Transport Material-Free Perovskite Solar Cell Using 2D Perovskite as an Electron Blocking Layer Over 3D Perovskite Light-Absorbing Layer (η = 18.5%) |
|
|
200 | (1) |
|
8.4.4 Polycrystalline FAPbI3 3D Perovskite Solar Cell with 2D PEA2PbI4 Perovskite at Grain Boundaries (η = 19.77%) |
|
|
200 | (2) |
|
8.5 Discussion and Conclusions |
|
|
202 | (5) |
|
|
204 | (3) |
|
Chapter 9 Carbonaceous Nanomaterials-Based Solar Cells |
|
|
207 | (26) |
|
9.1 Using Carbon Nanotubes to Make an Inexpensive Counter Electrode for a Dye-Sensitized Solar Cell |
|
|
207 | (1) |
|
9.1.1 Replacing Platinum with CNTs-Coated Nonconductive Glass Plate |
|
|
207 | (1) |
|
9.1.2 Replacing Platinum with Pt NPs/CNTs Nanohybrid-Coated Nonconductive Glass Plate |
|
|
207 | (1) |
|
9.1.3 Performance of CNTs and Pt NPs/CNTs Electrodes in a Solar Cell |
|
|
207 | (1) |
|
9.1.4 Pt NPs/CNTs Nanohybrid |
|
|
207 | (1) |
|
9.1.5 CNTs and Pt NPs/CNTs Dispersants |
|
|
208 | (1) |
|
9.1.6 CNTs and Pt NPs/CNTs Electrodes |
|
|
208 | (1) |
|
9.1.7 Dye-Sensitized Solar Cells with CNTs and Pt NPs/CNTs Electrodes |
|
|
208 | (1) |
|
9.1.8 Parameters of Solar Cells with CNTs and Pt NPs/CNTs Electrodes |
|
|
208 | (1) |
|
9.2 Using Carbon Nanotubes to Improve the Properties of TiO2-Based Electron Transport Material in Perovskite Solar Cells |
|
|
208 | (6) |
|
9.2.1 Advantages and Limitations of TiO2 as an Electron Transport Material |
|
|
211 | (1) |
|
9.2.2 Choice of CNTs as TiO2 Conductivity-Enhancement Nanomaterials |
|
|
211 | (1) |
|
9.2.3 Fabrication of the Solar Cell Using TiO2 NPs-SWCNTs Nanocomposite |
|
|
211 | (2) |
|
9.2.4 Solar Cell with TiO2NPs-SWCNTs and Control Cell |
|
|
213 | (1) |
|
9.3 Using CNTs and C60 to Make a High-Stability, Cost-Effective Perovskite Solar Cell |
|
|
214 | (1) |
|
9.3.1 Material Replacements in Traditional Structure |
|
|
214 | (1) |
|
9.3.2 Fabrication of Perovskite Solar Cell with Replaced Materials |
|
|
214 | (1) |
|
9.3.3 Solar Cell Performance vs. Cost |
|
|
215 | (1) |
|
9.4 Integrating CNTs in a Silicon-Based Solar Cell: Si-CNTs Hybrid Solar Cell |
|
|
215 | (3) |
|
9.4.1 Advantages of CNTs Integration |
|
|
216 | (1) |
|
9.4.2 Fabrication of the Solar Cell |
|
|
216 | (1) |
|
9.4.3 Testing of the Solar Cell |
|
|
216 | (2) |
|
9.5 Si-CNTs Hybrid Solar Cell Fabrication by Superacid Sliding Coating |
|
|
218 | (5) |
|
9.5.1 Superacid Slide Casting Method for High-Quality CNTs Film Preparation |
|
|
218 | (2) |
|
|
220 | (3) |
|
9.6 TiO2-Coated CNTs-Si Solar Cell |
|
|
223 | (1) |
|
9.7 Using Graphene to Make Semitransparent Perovskite Solar Cells |
|
|
223 | (2) |
|
9.7.1 Semitransparent Solar Cells and Suitability of Graphene for These Cells |
|
|
223 | (1) |
|
9.7.2 Parts of Semitransparent Solar Cell |
|
|
223 | (1) |
|
|
223 | (1) |
|
|
223 | (1) |
|
9.7.2.3 Assembling Together Parts I and II |
|
|
224 | (1) |
|
9.7.2.4 Multilayer Graphene and Gold Electrode Solar Cells |
|
|
225 | (1) |
|
9.8 Graphene/N-Type Si Schottky Diode Solar Cell |
|
|
225 | (2) |
|
9.8.1 Doping Graphene with TFSA |
|
|
225 | (1) |
|
9.8.2 Fabrication of Graphene/N-Si Solar Cell |
|
|
226 | (1) |
|
9.8.3 Parameters of Solar Cell with and without Doping with TFSA |
|
|
227 | (1) |
|
9.9 Discussion and Conclusions |
|
|
227 | (6) |
|
|
230 | (3) |
|
Part V Quantum Well, Nanowire, and Quantum Dot Photovoltaics |
|
|
|
Chapter 10 Quantum Well Solar Cells: Particle-in-a-Box Model and Bandgap Engineering |
|
|
233 | (32) |
|
10.1 What is a Quantum Well Solar Cell? |
|
|
233 | (1) |
|
10.1.1 QW Solar Cell as a Way of Extending the Useful Range of Solar Spectrum Utilized for Energy Conversion |
|
|
233 | (1) |
|
10.1.2 QW Solar Cell as an Approach towards Realizing Multijunction Solar Cells with Optimal Bandgaps |
|
|
233 | (1) |
|
|
233 | (4) |
|
10.3 Physics of Quantum Wells |
|
|
237 | (18) |
|
10.3.1 Particle-in-a-Box Model of the Quantum Well |
|
|
237 | (4) |
|
10.3.2 Imagining Quantum Well as a Finite Potential Well |
|
|
241 | (1) |
|
10.3.3 Energy States of a Quantum Well and Defining an Effective Bandgap of the Quantum Well |
|
|
241 | (1) |
|
10.3.4 Difference between the Multiple-Quantum Well and Superlattice Structures |
|
|
241 | (2) |
|
10.3.5 Charge Transport Mechanisms in the Quantum Well Solar Cell |
|
|
243 | (2) |
|
10.3.6 Excitonic Model of Optical Absorption |
|
|
245 | (10) |
|
10.4 Bandgap Engineering of Quantum Well Architectures |
|
|
255 | (3) |
|
10.5 Inclusion of Strain and Electric Field Effects for Generalization of Energy Gap Variation Equation |
|
|
258 | (1) |
|
10.6 Discussion and Conclusions |
|
|
259 | (6) |
|
|
263 | (2) |
|
Chapter 11 Quantum Well Solar Cells: Material Systems and Fabrication |
|
|
265 | (22) |
|
11.1 Techniques for Growth of Quantum Well Structures |
|
|
265 | (3) |
|
11.1.1 Molecular Beam Epitaxy |
|
|
265 | (1) |
|
11.1.2 Metal-Organic Chemical Vapor Deposition |
|
|
266 | (1) |
|
11.1.3 Difference between MBE and MOCVD |
|
|
267 | (1) |
|
11.2 Materials Systems and Structures for Quantum Well Solar Cells |
|
|
268 | (4) |
|
11.2.1 Lattice-Matched Quantum Well Solar Cells |
|
|
268 | (1) |
|
11.2.2 Strain-Balanced Quantum Well Solar Cells |
|
|
268 | (4) |
|
11.2.3 Strained Quantum Well Solar Cells |
|
|
272 | (1) |
|
11.3 Inverted GaAs Solar Cell with Strain-Balanced GalnAs/GaAsP Quantum Wells (η = 27.2%) |
|
|
272 | (4) |
|
11.4 GalnP/GaAs Dual-Junction Solar Cell with Strain-Balanced GalnAs/GaAsP Quantum Wells in the Bottom Cell (η = 32.9%) |
|
|
276 | (2) |
|
11.5 Triple-Junction Solar Cell with GalnAs/GaAsP Quantum Wells in the Middle Cell (η = 39.5%) |
|
|
278 | (2) |
|
11.6 Discussion and Conclusions |
|
|
280 | (7) |
|
|
285 | (2) |
|
Chapter 12 Nanowire Solar Cells: Configurations |
|
|
287 | (24) |
|
12.1 Reasons for Interest in Nanowire Solar Cells |
|
|
287 | (1) |
|
12.2 Broad Classification of Nanowire Solar Cells |
|
|
288 | (6) |
|
12.2.1 Two Types of Solar Cells According to the Number of Nanowires |
|
|
288 | (1) |
|
12.2.2 Two Types of Solar Cells According to Direction of Charge Separation |
|
|
288 | (1) |
|
12.2.3 Radial vs. Axial Junction Solar Cell |
|
|
288 | (6) |
|
12.3 Nanowire Solar Cell Properties and Operation through Examples |
|
|
294 | (13) |
|
12.4 Discussion and Conclusions |
|
|
307 | (4) |
|
|
309 | (2) |
|
Chapter 13 Nanowire Solar Cells: Fabrication |
|
|
311 | (52) |
|
13.1 Single-Nanowire Solar Cells |
|
|
311 | (11) |
|
13.1.1 Single GaAs Nanowire Solar Cell in Vertical Configuration (η = 40%) |
|
|
311 | (1) |
|
13.1.1.1 Fabrication Plan Outline |
|
|
311 | (1) |
|
13.1.1.2 Preparation of Oxidized P+ Silicon (100) Substrate with Apertures of 50-70nm Size |
|
|
311 | (1) |
|
13.1.1.3 Ga-Assisted VLS Growth of P-type GaAs Nanowire Core |
|
|
311 | (1) |
|
13.1.1.4 Growth of PMype GaAs Nanowire Shell |
|
|
312 | (2) |
|
13.1.1.5 Growth of an Undoped and N-type GaAs Nanowire Shell |
|
|
314 | (1) |
|
13.1.1.6 Making Electrical Contacts with the Nanowire |
|
|
314 | (2) |
|
13.1.1.7 Solar Cell Parameters |
|
|
316 | (1) |
|
13.1.2 Surface-Passivated Single GaAsP Nanowire Solar Cell in Horizontal Configuration (η = 10.2%) |
|
|
317 | (1) |
|
13.1.2.1 Fabrication Plan Outline |
|
|
317 | (1) |
|
13.1.2.2 Growth of P-I-N Radial Junction Core-Shell GaAs0.8P0.2 Nanowires |
|
|
317 | (5) |
|
13.1.2.3 Surface Passivation |
|
|
322 | (1) |
|
13.1.2.4 Nanowire Removal from Growth Substrate and Alignment on P+ Substrate |
|
|
322 | (1) |
|
13.1.2.5 P-Contact to the Nanowire |
|
|
322 | (1) |
|
13.1.2.6 N-Contact to the Nanowire |
|
|
322 | (1) |
|
|
322 | (1) |
|
13.1.2.8 Solar Cell Parameters |
|
|
322 | (1) |
|
13.2 GaAs Nanowire-on-Si Tandem Solar Cell (η = 11.4%) |
|
|
322 | (1) |
|
13.3 GaAs Nanowire Array Solar Cell (η = 15.3%) |
|
|
323 | (6) |
|
13.3.1 Making Au Disk Pattern |
|
|
323 | (1) |
|
13.3.2 VLS Method of Nanowire Growth |
|
|
324 | (1) |
|
13.3.3 P- and N-Type Doping |
|
|
324 | (1) |
|
|
324 | (5) |
|
13.3.5 Nanowire Diameter, Length, and Segments |
|
|
329 | (1) |
|
13.3.6 SiO2 Deposition and Surface Planarization |
|
|
329 | (1) |
|
13.3.7 Electrical Contacts |
|
|
329 | (1) |
|
13.3.8 GaAs Cell Parameters |
|
|
329 | (1) |
|
13.4 InP Nanowire Array Solar Cell Fabrication by Bottom-Up Approaches |
|
|
329 | (7) |
|
13.4.1 Solar Cell (η = 11.1%) with InP Nanowires Grown via Vapor-Liquid-Solid Mechanism and Surface Cleaning |
|
|
329 | (1) |
|
13.4.1.1 Nanowire Growth, Doping, and Passivation |
|
|
329 | (1) |
|
13.4.1.2 Top and Bottom Contacts |
|
|
330 | (1) |
|
13.4.1.3 Solar Cell Parameters |
|
|
330 | (1) |
|
13.4.1.4 Role of Nanowire Surface Cleaning |
|
|
330 | (1) |
|
13.4.2 Solar Cell (η = 13.8%) with Epitaxially Grown InP Nanowires |
|
|
330 | (1) |
|
13.4.2.1 InP Nanowire Growth and Covering Its Sidewalls with SiO2 |
|
|
330 | (1) |
|
|
330 | (1) |
|
13.4.2.3 Solar Cell Parameters |
|
|
330 | (6) |
|
13.5 InP Nanowire Array Solar Cell (η = 17.8%) Fabrication by Top-Down Approach: Dry-Etching from Epitaxially Grown Stack |
|
|
336 | (7) |
|
|
336 | (6) |
|
|
342 | (1) |
|
|
342 | (1) |
|
13.5.4 Nanowire Dimensions |
|
|
342 | (1) |
|
13.5.5 SiO2 Deposition and BCB Filling |
|
|
342 | (1) |
|
|
342 | (1) |
|
13.5.7 ITO Spreading and Rearrangement by Self-Alignment over the InP and BCB |
|
|
342 | (1) |
|
13.5.8 Role of Nanostructured ITO |
|
|
342 | (1) |
|
|
343 | (1) |
|
|
343 | (1) |
|
13.5.11 InP Cell Parameters |
|
|
343 | (1) |
|
13.6 Wet-Etching Processes of Silicon Nanowire Array Solar Cell Fabrication |
|
|
343 | (9) |
|
13.6.1 Radial Junction Solar Cell (η = 13.7%) Fabrication on P-type Wafers with Si NWs Made by Wet-Etching |
|
|
343 | (1) |
|
13.6.1.1 Fabrication Plan Outline |
|
|
343 | (2) |
|
13.6.1.2 Metal-Assisted Chemical Etching (MACE or MacEtch) of Silicon |
|
|
345 | (1) |
|
13.6.1.3 Nanowire Diameter and Areal Density |
|
|
346 | (1) |
|
13.6.1.4 Removal of Ag Residues |
|
|
346 | (1) |
|
13.6.1.5 Formation of N-Type Shell Layer |
|
|
346 | (1) |
|
|
346 | (1) |
|
13.6.1.7 Solar Cell Testing |
|
|
347 | (1) |
|
13.6.2 Solar Cell ((η = 17.11%) with Dielectric Passivation of Si Nanowires |
|
|
347 | (1) |
|
13.6.2.1 Fabrication Plan Outline |
|
|
347 | (3) |
|
13.6.2.2 Nanowire Creation by Etching P-type Si Wafer, N-Type Shell Formation, and Surface Passivation |
|
|
350 | (1) |
|
13.6.2.3 Optical Reflectance, Carrier Recombination Properties, and Efficiency |
|
|
350 | (1) |
|
13.6.3 Solar Cell (η = 13.4%) Fabrication on N-Type Si Wafers |
|
|
350 | (1) |
|
13.6.3.1 Nanowire Formation |
|
|
350 | (1) |
|
|
350 | (1) |
|
|
350 | (1) |
|
13.6.3.4 Comparison of Two Geometrical Designs |
|
|
350 | (1) |
|
13.6.3.5 Reflectance Dependence on Nanowire Length |
|
|
351 | (1) |
|
13.7 Dry-Etching Process of Silicon Nanowire Array Solar Cell (η = 11.7%) Fabrication |
|
|
352 | (3) |
|
13.7.1 SiO2 Hard Mask Creation for Silicon Etching |
|
|
352 | (1) |
|
|
352 | (1) |
|
13.7.3 Photoresist and Oxide Removal |
|
|
352 | (3) |
|
13.7.4 N-Type Layer Formation by Ion Implantation |
|
|
355 | (1) |
|
|
355 | (1) |
|
13.7.6 Nanowire Surface Passivation |
|
|
355 | (1) |
|
|
355 | (1) |
|
|
355 | (1) |
|
13.7.9 Photovoltaic Properties of the Cell |
|
|
355 | (1) |
|
13.8 Discussion and Conclusions |
|
|
355 | (8) |
|
|
360 | (3) |
|
Chapter 14 Quantum Dot Solar Cells: Bandgap and Multicarrier Effects |
|
|
363 | (32) |
|
14.1 Bandgap Tuning of Quantum Dots |
|
|
363 | (11) |
|
14.1.1 Quantum Dots as a Particle-in-a-Box System |
|
|
363 | (1) |
|
14.1.2 Effective Bandgap of the Quantum Dot |
|
|
364 | (10) |
|
14.2 Multiple Exciton Generation (MEG) |
|
|
374 | (2) |
|
14.2.1 Difference between Bulk Solar Cell and Quantum Dot Solar Cell |
|
|
374 | (1) |
|
14.2.2 Reason for Greater Likelihood of MEG in a Quantum Dot |
|
|
375 | (1) |
|
14.2.3 Corresponding Terms for a Bulk Semiconductor and a Quantum Dot |
|
|
376 | (1) |
|
14.3 Drawing Energy Band Diagrams of Heterojunctions |
|
|
376 | (13) |
|
14.3.1 Rules and Considerations in the Construction of Energy Band Diagrams of Heterojunctions |
|
|
376 | (1) |
|
14.3.2 Driving Energy for Charge Transfer across a Heterojunction |
|
|
377 | (12) |
|
14.4 Discussion and Conclusions |
|
|
389 | (6) |
|
|
393 | (2) |
|
Chapter 15 Quantum Dot Solar Cells: Types of Cells and Their Fabrication |
|
|
395 | (48) |
|
15.1 Classification of Quantum Dot Solar Cells |
|
|
395 | (1) |
|
15.2 Quantum Dot P-N Junction Solar Cells |
|
|
396 | (7) |
|
15.2.1 PbS QD Solar Cell with NaHS-Treated P-Type Layer (η = 7.6%) |
|
|
396 | (1) |
|
|
397 | (1) |
|
15.2.1.2 Oleic Acid-Capped PbS QD Synthesis |
|
|
397 | (1) |
|
15.2.1.3 Anatase TiO2 Deposition |
|
|
397 | (1) |
|
15.2.1.4 N-Type PbS Film (PbS QDs Treated with TBAI) Deposition |
|
|
397 | (1) |
|
15.2.1.5 P-Type PbS Film (PbS QDs Capped with EDT) Deposition |
|
|
397 | (1) |
|
15.2.1.6 MoO3 (5nM) and Au (80nm) Deposition |
|
|
397 | (1) |
|
15.2.1.7 Enhancement of Power Conversion Efficiency by Increase in P-Type Doping with NaHS Treatment |
|
|
397 | (1) |
|
15.2.2 Improved Reliability PbS QD Solar Cell with Atomic-Layer Deposited TiO2 Electron Transport Layer (η = 5.5--7.2%) |
|
|
397 | (2) |
|
15.2.3 Low-Cost PbS QD Solar Cell with ZnO Electron Transport Layer and Stable Cr-Ag Electrodes (η = 6.5%) |
|
|
399 | (1) |
|
15.2.4 PbS QD Solar Cell by a Scalable Industrially Suited Doctor Blading Process Using N- and P-Type Inks (η = 9%) |
|
|
399 | (1) |
|
15.2.5 PbS QD Solar Cell with PD2FCT-29DPP as HTL (η = 14%) |
|
|
399 | (2) |
|
15.2.6 PbS QD Solar Cell (η = 10.06%) as the Back Cell in a Tandem Solar Cell (η = 18.9%) |
|
|
401 | (1) |
|
15.2.6.1 Front Semitransparent Perovskite Solar Cell |
|
|
401 | (1) |
|
15.2.6.2 Back Colloidal Quantum Dot Solar Cell |
|
|
401 | (1) |
|
15.2.6.3 Stacking the Cells for Proper Light Coupling |
|
|
401 | (2) |
|
15.2.7 PbS QD Solar Cell (η = 11.6%) as the Back Cell in a Tandem Solar Cell (η = 20.2%) |
|
|
403 | (1) |
|
15.3 Quantum Dot Schottky Barrier Solar Cell (η = 1.8%) |
|
|
403 | (4) |
|
15.3.1 Synthesis of PbS QD Film and Ligand Exchange for Improving Conductivity |
|
|
403 | (3) |
|
15.3.2 PbS QD Film Deposition and Making Contacts |
|
|
406 | (1) |
|
|
406 | (1) |
|
15.3.4 Solar Cell Performance Parameters |
|
|
406 | (1) |
|
15.3.5 Shortcomings of Schottky Diode Quantum Dot Solar Cells |
|
|
406 | (1) |
|
15.4 Quantum Dot-Depleted Heterojunction Solar Cell (η = 3.36%) |
|
|
407 | (4) |
|
15.4.1 TiO2 Nanoparticle Film |
|
|
409 | (1) |
|
|
409 | (1) |
|
15.4.3 Layer-by-Layer Deposition of PbS QD Film on Porous TiO2 Film |
|
|
409 | (1) |
|
15.4.4 Top Electrode Deposition |
|
|
409 | (1) |
|
|
410 | (1) |
|
15.4.6 Working of the Cell |
|
|
410 | (1) |
|
15.4.7 Surmounting the Drawbacks of Schottky Diode Cell |
|
|
410 | (1) |
|
15.5 Quantum Dot-Depleted Bulk Heterojunction Solar Cell (η = 5.5%) |
|
|
411 | (2) |
|
15.5.1 Disadvantages of Schottky Diode and Depleted Heterojunction Structures and Evolving Improved Designs |
|
|
411 | (1) |
|
15.5.2 Difference between Fabrication Processes of DH and DBH Solar Cells |
|
|
411 | (2) |
|
15.6 Quantum Dot Hybrid Solar Cell (η = 4.91%) |
|
|
413 | (2) |
|
15.6.1 Necessity of Hybrid QD Solar Cell |
|
|
413 | (1) |
|
15.6.2 Hybrid QD Solar Cell Structure |
|
|
413 | (1) |
|
|
413 | (1) |
|
15.6.4 Formation of P3HT-6-PS |
|
|
413 | (1) |
|
|
413 | (1) |
|
15.6.6 Substrate Cleaning |
|
|
413 | (2) |
|
15.6.7 PEDOT: PSS Coating |
|
|
415 | (1) |
|
15.6.8 P3HT-b-PS/PbS QDs Coating |
|
|
415 | (1) |
|
15.6.9 Post-Ligand Exchange to BDT |
|
|
415 | (1) |
|
15.6.10 Pure Layer of PbS QDs with Oleic Acid Ligands |
|
|
415 | (1) |
|
15.6.11 Cathode Deposition |
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|
415 | (1) |
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15.6.12 Solar Cell Testing |
|
|
415 | (1) |
|
15.7 Quantum Dot-Sensitized Solar Cell |
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|
415 | (2) |
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15.7.1 Similarities and Dissimilarities with DBH Solar Cell |
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|
415 | (1) |
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15.7.2 Difference from Dye-Sensitized Solar Cell |
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|
415 | (1) |
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|
416 | (1) |
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|
416 | (1) |
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15.8 Fabrication of PbS QD-Sensitized Solar Cells |
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|
417 | (3) |
|
15.8.1 PbS-ZnS QDs-Sensitized Solar Cells (η = 2.41, 4.01%) |
|
|
417 | (1) |
|
15.8.1.1 Mesoporous TiO2 Film Deposition on FTO Substrate |
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|
417 | (2) |
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15.8.1.2 Deposition of PbS QDs on TiO2 Layer |
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|
419 | (1) |
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15.8.1.3 Deposition of ZnS Passivation Layer |
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|
419 | (1) |
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|
419 | (1) |
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15.8.1.5 Deposition of Cu2S Film on Brass Foil to Make the Counter Electrode |
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|
419 | (1) |
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15.8.1.6 Photovoltaic Characterization of the Solar Cell |
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|
419 | (1) |
|
15.8.2 PbS-ZnS QDSSC (η = 5.82%) |
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|
419 | (1) |
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15.8.2.1 Compact TiO2 layer |
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|
419 | (1) |
|
15.8.2.2 Porous TiO2 Layer |
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|
419 | (1) |
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15.8.2.3 Sensitization of Porous TiO2 Layer with PbS QDs |
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|
419 | (1) |
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15.8.2.4 Passivation of QDs with ZnS, Electrolyte Injection, and Device Assembly |
|
|
420 | (1) |
|
15.9 Fabrication of CdS QD-Sensitized Solar Cells |
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|
420 | (8) |
|
15.9.1 CdS QDSSC with η = 1.84% |
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|
420 | (2) |
|
15.9.1.1 CdS QDs-Modified TiO2 Electrode |
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|
422 | (1) |
|
15.9.1.2 Counter Electrode |
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|
422 | (1) |
|
15.9.1.3 Redox Electrolyte |
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|
422 | (1) |
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|
422 | (1) |
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|
422 | (1) |
|
15.9.2 CdS QDSSC Using Graphene Oxide Powder (η = 2.02%) |
|
|
422 | (1) |
|
15.9.3 Increasing the QDSSC Efficiency by Modification of CdS with 2D g-C3N4 (η = 2.31%) |
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|
423 | (2) |
|
15.9.4 Raising the QDSSC Efficiency by Mn-Doping of CdS (η = 3.29%) |
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|
425 | (1) |
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15.9.5 GO/N-Doped TiO2/CdS/Mn-Doped ZnS/Zn-Porphyrin QDSSC (η = 4.62%) |
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|
426 | (2) |
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15.9.6 Mixed-Joint CdS-ZnS QDSSC (η = 6.37%) and ZnS QDSSC (η = 2.72%) |
|
|
428 | (1) |
|
15.10 Quantum Dot Intermediate Band Solar Cell (η = 16.3%) |
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|
428 | (6) |
|
15.10.1 Intermediate Band Solar Cell Concept and Energy Band Diagram |
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|
428 | (4) |
|
15.10.2 Quantum Engineering |
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|
432 | (1) |
|
15.10.3 Growth of Quantum Dots |
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|
432 | (1) |
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|
433 | (1) |
|
15.10.5 Signature of Intermediate Band |
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|
434 | (1) |
|
15.10.6 Photovoltaic Parameters of the QD-IBSC |
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|
434 | (1) |
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15.11 Discussion and Conclusions |
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|
434 | (9) |
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|
440 | (3) |
Index A Solar cells |
|
443 | (2) |
Index B General |
|
445 | |