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Nanoscale Semiconductor Memories: Technology and Applications [Kõva köide]

Edited by (Emerging Technologies CMOS Inc., British Columbia, Canada), Edited by (Rochester Institute of Technology, New York, USA)
  • Formaat: Hardback, 448 pages, kõrgus x laius: 234x156 mm, kaal: 748 g, 17 Tables, black and white; 316 Illustrations, black and white
  • Sari: Devices, Circuits, and Systems
  • Ilmumisaeg: 12-Dec-2013
  • Kirjastus: CRC Press Inc
  • ISBN-10: 1466560606
  • ISBN-13: 9781466560604
Teised raamatud teemal:
  • Formaat: Hardback, 448 pages, kõrgus x laius: 234x156 mm, kaal: 748 g, 17 Tables, black and white; 316 Illustrations, black and white
  • Sari: Devices, Circuits, and Systems
  • Ilmumisaeg: 12-Dec-2013
  • Kirjastus: CRC Press Inc
  • ISBN-10: 1466560606
  • ISBN-13: 9781466560604
Teised raamatud teemal:
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Preface xi
Editors xvii
Contributors xix
PART I Static Random Access Memory
Chapter 1 SRAM: The Benchmark of VLSI Technology
3(22)
Qingqing Liang
Chapter 2 Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies
25(32)
Gilles Gasiot
Philippe Roche
Chapter 3 Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation
57(44)
Lawrence T. Clark
PART II Dynamic Random Access Memory
Chapter 4 DRAM Technology
101(36)
Myoung Jin Lee
Chapter 5 Concepts of Capacitorless IT-DRAM and Unified Memory on SOI
137(20)
Sorin Cristoloveanu
Maryline Bawedin
Chapter 6 A-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22nm Nodes and Beyond
157(26)
Francisco Gamiz
Noel Rodriguez
Sorin Cristoloveanu
PART III Novel Flash Memory
Chapter 7 Quantum Dot-Based Flash Memories
183(20)
Tobias Nowozin
Andreas Marent
Martin Getter
Dieter Bimberg
PART IV Magnetic Memory
Chapter 8 Spin-Transfer-Torque MRAM
203(26)
Kangho Lee
Chapter 9 Magnetic Domain Wall "Racetrack" Memory
229(30)
Michael C. Gaidis
Luc Thomas
PART V Phase-Change Memory
Chapter 10 Phase-Change Memory Cell Model and Simulation
259(48)
Jin He
Yujun Wei
Mansun Chan
Chapter 11 Phase-Change Memory Devices and Electrothermal Modeling
307(26)
Helena Silva
Azer Faraclas
Ali Gokirmak
PART VI Resistive Random Access Memory
Chapter 12 Nonvolatile Memory Device: Resistive Random Access Memory
333(28)
Peng Zhou
Lin Chen
Hangbing Lv
Haijun Wan
Qingqing Sun
Chapter 13 Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits
361(58)
Hong Yu Yu
Index 419
Kurinec, Santosh K.; Iniewski, Krzysztof