Muutke küpsiste eelistusi

Next-Generation High-Speed Electronics and Optoelectronics: Volume 2 [Kõva köide]

Edited by , Edited by , Edited by
  • Formaat: Hardback, 544 pages, kõrgus x laius: 235x155 mm, 178 Illustrations, color; 24 Illustrations, black and white
  • Sari: Lecture Notes in Electrical Engineering
  • Ilmumisaeg: 03-Jan-2026
  • Kirjastus: Springer Verlag, Singapore
  • ISBN-10: 9819544149
  • ISBN-13: 9789819544141
  • Kõva köide
  • Hind: 187,84 €*
  • * hind on lõplik, st. muud allahindlused enam ei rakendu
  • Tavahind: 220,99 €
  • Säästad 15%
  • Raamatu kohalejõudmiseks kirjastusest kulub orienteeruvalt 3-4 nädalat
  • Kogus:
  • Lisa ostukorvi
  • Tasuta tarne
  • Tellimisaeg 2-4 nädalat
  • Lisa soovinimekirja
  • Formaat: Hardback, 544 pages, kõrgus x laius: 235x155 mm, 178 Illustrations, color; 24 Illustrations, black and white
  • Sari: Lecture Notes in Electrical Engineering
  • Ilmumisaeg: 03-Jan-2026
  • Kirjastus: Springer Verlag, Singapore
  • ISBN-10: 9819544149
  • ISBN-13: 9789819544141
This book offers an in-depth exploration of the latest advancements in high-speed electronics and optoelectronics, focusing on breakthrough technologies that drive faster data rates, lower power consumption, and improved system performance. Readers gain insights into advanced materials like graphene and black phosphorus, cutting-edge device architectures, and innovative circuit designs for gigahertz (GHz) and terahertz (THz) frequencies. With practical research and real-world applications, this book greatly benefits postgraduate students, academic researchers, and professionals working in telecommunications, photonics, and next-generation electronics systems.
Introduction to Next-Generation High-Speed Electronics and
Optoelectronics (Vol. 2).- Emerging Devices and Materials.- Nanotechnology in
Electronic Devices.- Bending Light through Time and Space: A Translational
Symmetry Perspective on Entangled Anti-nodal Dynamics.- Translational
Symmetry of Intermediate Nodes in Entangled Particles: A New Perspective on
Quantum Communication.- Silicon Carbide-Based Triple-Metal GAA MOSFETs:
Analytical Insights into Electrical and Analog Performance.- Enhanced
Reliability Architecture for VLSI Systems Using IRMC Algorithm for Error
Detection and Correction.- Enhanced Non-Line-of-Sight Scattering Channel
Modelling for MIMO-Based Underwater Wireless Optical Communication.- A
Cryogenically Robust Bandgap Reference with Sub-2 ppm/°C Temperature
Coefficient and High PSRR for Space-Grade and Low-Temperature Power
Management ICs.- High-Linearity Al0.3Ga0.7N/GaN HEMTs for Spectrum-Efficient
Millimetre-wave (m-Wave) IoE Networks.- Design and Analysis of a Photonic
Crystal Gas Sensor using Machine Learning Approach.- Hardware-Efficient VLSI
Implementation of Self-Attention Transformers for Natural Language
Processing.- Brief Overview of Transition Metal Dichalcogenides (TMDs) as an
Anode Material for Rechargeable Batteries.- Radiation Response of InAs
Quantum Well n-MOSFETs: Role of Geometry and Bias.
Dr. Aritra Acharyya is Assistant Professor in the Department of Electronics and Communication Engineering at Kalyani Government Engineering College, West Bengal, since July 2024. He previously served as Assistant Professor in the Department of ECE, Cooch Behar Government Engineering College, from May 2016 to July 2024. Born in 1986, he received his B.E. from IIEST Shibpur in 2007, M.Tech. from the Institute of Radio Physics and Electronics, University of Calcutta, in 2010, and Ph.D. from the same institute in 2016. His research interests include high-frequency semiconductor devices, nanostructures, semiconductor physics, transport phenomena, quantum mechanics, and optoelectronics. He has published 102 papers in peer-reviewed journals, 72 papers in national and international conference proceedings, and several book chapters. He has also authored and edited 14 books. 



Dr. Angsuman Sarkar is Professor and Head of Electronics and Communication Engineering at Kalyani Government Engineering College, West Bengal. He previously served at Jalpaiguri GEC and KGEC as Lecturer, Assistant, and Associate Professor for over 23 years. He earned his M.Tech. in VLSI and microelectronics and Ph.D. from Jadavpur University. His research focuses on short-channel effects of sub-100 nm MOSFETs and nano device modeling. He is Senior Member of IEEE, Fellow of IE(I) and IETE, Life Member of ISTE, and Former Chairman of IEEE EDS Kolkata Chapter. He has authored 6 books, 23 book chapters, 110 international journal papers, and 68 conference papers. Featured in the World Ranking of Top 2% Scientists in Nanoscience and Nanotechnology by Stanford University and Elsevier, he also serves on editorial boards and reviews for leading journals. Currently, he supervises 8 Ph.D. scholars and has guided 9 to completion. 



Dr. Mariya Aleksandrova is Associate Professor of Fabrication Technology of Electronics at the Department of Microelectronics, Technical University of Sofia. She received her masters in electronic engineering in 2007 and Ph.D. in 2010, focusing on interface optimization in organic light-emitting devices. After five years as Assistant Professor, she became Associate Professor in 2015. Her research has evolved from flexible polymeric light-emitting devices to flexible and wearable electronics, energy harvesting, and thin-film supercapacitors integrated with PCBs. Since 2018, her group has emphasized energy harvesting technologies. She leads the laboratories Thin-film Electronics, Photolithography, and Quality and Reliability in Automotive Electronics. Dr. Aleksandrova has designed seven core curricula at the Faculty of Electronic Engineering and Technology, including courses on micro- and nanosystems, thin-film electronics, and energy harvesting technologies. She has contributed to numerous national and international projects and authored 3 books, 5 book chapters, and over 120 peer-reviewed papers.