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Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices 1st ed. 2015 [Kõva köide]

  • Formaat: Hardback, 193 pages, kõrgus x laius: 235x155 mm, kaal: 553 g, 25 Illustrations, color; 63 Illustrations, black and white; XIII, 193 p. 88 illus., 25 illus. in color., 1 Hardback
  • Sari: Springer Theses
  • Ilmumisaeg: 18-Dec-2015
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3319258036
  • ISBN-13: 9783319258034
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  • Formaat: Hardback, 193 pages, kõrgus x laius: 235x155 mm, kaal: 553 g, 25 Illustrations, color; 63 Illustrations, black and white; XIII, 193 p. 88 illus., 25 illus. in color., 1 Hardback
  • Sari: Springer Theses
  • Ilmumisaeg: 18-Dec-2015
  • Kirjastus: Springer International Publishing AG
  • ISBN-10: 3319258036
  • ISBN-13: 9783319258034

This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.



1 Introduction
1(12)
1.1 Light-Matter Interaction in Semiconductors
1(3)
1.2 Semiconductor Lasers
4(2)
1.3 Semiconductor Lasers as Dynamical Systems
6(1)
1.4 Semiconductor Quantum-Dots
7(2)
1.5 Outline of the Thesis
9(4)
References
10(3)
2 Theory of Quantum-Dot Optical Devices
13(40)
2.1 Introduction
13(1)
2.2 Charge-Carrier Scattering in Quantum-Dot Structures
14(11)
2.2.1 Coulomb-Scattering of Charge Carriers
16(4)
2.2.2 Electron-Hole Picture
20(1)
2.2.3 Detailed Balance
21(2)
2.2.4 Carrier-Phonon Scattering
23(2)
2.3 Light-Matter Interaction
25(7)
2.3.1 Electric Field Dynamics
26(3)
2.3.2 Maxwell-Bloch Equations
29(3)
2.4 Quantum-Dot Laser Rate Equations
32(11)
2.4.1 Maxwell-Bloch Laser Rate Equations
32(5)
2.4.2 Adiabatically Eliminated Polarization
37(2)
2.4.3 Modeling of Spontaneous Emission
39(2)
2.4.4 Carrier-Induced Gain and Refractive Index Changes
41(2)
2.5 Quantum-Dot Laser Carrier-Heating Model
43(10)
2.5.1 Charge-Carrier Energy and Temperature
43(2)
2.5.2 Carrier Heating by Auger-Scattering Processes
45(1)
2.5.3 Energy Balance Equations
46(1)
References
47(6)
3 Quantum-Dot Laser Dynamics
53(94)
3.1 Introduction
53(1)
3.2 Laser Dynamics---Relaxation Oscillations
54(12)
3.2.1 Relaxation Oscillations in Two-Variable Laser Equations
55(3)
3.2.2 Turn-On Dynamics of Quantum-Dot Lasers
58(5)
3.2.3 Influence of Charge-Carrier Scattering
63(3)
3.3 Minimal Model for Quantum-Dot Laser Dynamics
66(10)
3.3.1 Linearization and Eigenvalue Problem
68(3)
3.3.2 Asymptotic Analysis---Relaxation Oscillations
71(5)
3.4 Modulation Response of Quantum-Dot Lasers
76(6)
3.4.1 Small-Signal Response
76(6)
3.5 Amplitude-Phase Coupling in Quantum-Dot Lasers
82(7)
3.5.1 The Linewidth-Enhancement Factor α
83(1)
3.5.2 Charge-Carrier-Induced Susceptibility in Quantum-Dot Lasers
84(5)
3.6 Dynamics Under Optical Injection
89(22)
3.6.1 Quantum-Dot Laser Model with Optical Injection
90(2)
3.6.2 Injection Locking of Quantum-Dot Lasers
92(5)
3.6.3 Dependence on the Quantum-Dot Structure and Pump-Current
97(4)
3.6.4 Evaluation of the α-Factor from Optical Injection
101(3)
3.6.5 Comparison with α-Factor-Based Models
104(7)
3.7 Optical Injection---Numerical Path Continuation
111(12)
3.7.1 Quantum-Dot Laser Model Simplification
112(5)
3.7.2 Path Continuation Results
117(3)
3.7.3 Dependencies on Scattering and Reservoir Loss Rates
120(2)
3.7.4 Summary
122(1)
3.8 Dynamics Under Optical Feedback
123(8)
3.8.1 Quantum-Dot Laser Model with Optical Feedback
123(2)
3.8.2 Quantum-Dot Laser Dynamics Under Optical Feedback
125(6)
3.9 Small-Signal Frequency Response of Quantum-Dot Lasers
131(6)
3.9.1 Evaluation of the Frequency and Amplitude Modulation Indices
131(1)
3.9.2 Numerical Evaluation of FM/AM Measurements
132(3)
3.9.3 Influence of Scattering Rates and Reservoir Losses
135(2)
3.10 Conclusion
137(10)
References
139(8)
4 Quantum-Dot Optical Amplifiers
147(40)
4.1 Introduction
147(1)
4.2 Quantum-Dot Semiconductor Optical Amplifier Model
148(6)
4.2.1 Electric Field Propagation
149(1)
4.2.2 Quantum-Dot Material Equations
150(2)
4.2.3 Modeling of Spontaneous Emission
152(2)
4.3 Large-Signal Amplification in Quantum-Dot Amplifiers
154(10)
4.3.1 Calculation of Amplified Spontaneous Emission Spectra
155(4)
4.3.2 Gain Saturation
159(2)
4.3.3 Amplification of Optical Data Streams
161(3)
4.4 Multi-State Operation of Quantum-Dot Amplifiers
164(5)
4.5 Coherent Transients in Quantum-Dot Amplifiers
169(11)
4.5.1 Rabi-Oscillations in Quantum-Dot Semiconductor Amplifiers
171(4)
4.5.2 Comparison with Experimental Measurements
175(5)
4.6 Conclusion
180(7)
References
182(5)
5 Summary and Outlook
187(4)
Appendix A 191
Benjamin Lingnau received his B.Sc in physics in 2009 and his M.Sc in 2011 from TU Berlin. He graduated and received the Dr. rer. nat. from TU Berlin in 2015. His scientific interests include nonlinear laser dynamics and dynamics of semiconductor quantum-dot optoelectronic devices. He has authored and co-authored 18 peer-reviewed scientific papers.