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Power Management of Digital Circuits in Deep Sub-Micron CMOS Technologies 2007 ed. [Kõva köide]

  • Formaat: Hardback, 186 pages, kõrgus x laius: 235x155 mm, kaal: 1030 g, XVI, 186 p., 1 Hardback
  • Sari: Springer Series in Advanced Microelectronics 25
  • Ilmumisaeg: 10-Oct-2006
  • Kirjastus: Springer-Verlag New York Inc.
  • ISBN-10: 1402050801
  • ISBN-13: 9781402050800
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  • Formaat: Hardback, 186 pages, kõrgus x laius: 235x155 mm, kaal: 1030 g, XVI, 186 p., 1 Hardback
  • Sari: Springer Series in Advanced Microelectronics 25
  • Ilmumisaeg: 10-Oct-2006
  • Kirjastus: Springer-Verlag New York Inc.
  • ISBN-10: 1402050801
  • ISBN-13: 9781402050800
Teised raamatud teemal:
In the deep sub-micron regime, the power consumption has become one of the most important issues for competitive design of digital circuits. Due to dramatically increasing leakage currents, the power consumption does not take advantage of technology scaling as before. State-of-art power reduction techniques like the use of multiple supply and threshold voltages, transistor stack forcing and power gating are discussed with respect to implementation and power saving capability. Focus is given especially on technology dependencies, process variations and technology scaling. Design and implementation issues are discussed with respect to the trade-off between power reduction, performance degradation, and system level constraints. A complete top-down design flow is demonstrated for power gating techniques introducing new design methodologies for the switch sizing task and circuit blocks for data-retention and block activation. The leakage reduction ratio and the minimum power-down time are introduced as figures of merit to describe the power gating technique on system level and give a relation to physical circuit parameters. Power Management of Digital Circuits in Deep Sub-Micron CMOS Technologies mainly deals with circuit design but also addresses the interface between circuit and system level design on the one side and between circuit and physical design on the other side.

This book provides an in-depth overview of design and implementation of leakage reduction techniques. The focus is on applicability, technology dependencies, and scalability. The book mainly deals with circuit design but also addresses the interface between circuit and system level design on the one side and between circuit and physical design on the other side.
Preface xi
List of Symbols and Abbreviations
xiii
Introduction to Low-Power Digital Integrated Circuit Design
1(22)
Transistor Scaling in the Context of Power Consumption and Performance
1(17)
Fundamental CMOS Scaling Strategies
5(3)
Leakage Currents in Modern MOS Transistors
8(8)
Transistor Scaling in the Deep Sub-Micron Regime
16(2)
Classic Low-Power Strategies
18(1)
Low-Power Strategies beyond the Quarter Micron Technology node
19(4)
Logic with Multiple Supply Voltages
23(26)
Principle of Multiple Supply Voltages
23(2)
Power Saving Capability and Voltage Assignment
25(8)
Supply Voltage Assignment Algorithm
28(4)
Extended Clustered Voltage Scaling
32(1)
Level Conversion in Multi-VDD Circuits
33(10)
Asynchronous Level-Shifter Design
34(4)
Design of Level-Shifter FlipFlops
38(4)
Level Conversion in Dynamic Circuits
42(1)
Dynamic Voltage Scaling (DVS)
43(6)
Logic with Multiple Threshold Voltages
49(12)
Principle of Multiple Threshold Voltages
49(1)
Concept of Leakage Effective Gate Width
50(1)
Impact of Supply and Threshold Voltage Variability on Gate Delay
51(1)
Active Body Bias Strategies
52(9)
Reverse Body Bias Technique (RBB)
54(2)
Constraints of Reverse Body Biasing
56(1)
Scaling Properties of RBB
57(1)
Forward Body Bias Technique (FBB)
57(2)
Constraints of Forward Body Biasing
59(1)
Scaling Properties of FBB
60(1)
Forcing of Transistor Stacks
61(8)
Principle of Stack Forcing
61(5)
Impact of Gate and Junction Leakage
64(2)
Stack Forcing as Leakage Reduction Technique
66(3)
Power Gating
69(100)
Principle of Power Gating
69(3)
Design Trade-Offs of Power Gating
72(3)
Basic Properties of Power Gating
75(11)
Implementation of the Power Switch Devices
75(3)
Stationary Active and Idle State
78(1)
Transient Behavior During Block Activation
79(1)
Interfaces of a Sleep Transistor Block
80(2)
System Aspects of Power Gating
82(4)
Embodiments of Power Gating
86(13)
Sleep Transistor within Standard Cells
86(2)
Shared Sleep Transistor
88(2)
Optimization of Gate Potential - Gate Boosting and Super Cut-Off
90(2)
ZigZag Super Cut-Off CMOS
92(6)
Selective Sleep Transistor Scheme
98(1)
Demonstrator Design and Measurement
99(8)
16-bit Multiply-Accumulate Unit
99(2)
Testchip Measurement
101(3)
16-bit Finite Impulse Response Filter
104(1)
Comparison of Current Profiles of Differently Pipelined Circuits
105(2)
Sleep Transistor Design Task
107(21)
Optimum Total Channel Width
107(1)
Methodologies for Sizing of Power Switch
107(4)
Analytical Investigation of Delay Degradation
111(3)
Approximation of Analytical Solution
114(1)
Comparison with Simulation
115(1)
Design Space of Power Gating
116(2)
Optimum Channel Length
118(4)
Distributed vs. Localized Switch Placing
122(3)
Impact of Virtual Rail Decoupling
125(3)
Minimum Idle Time
128(12)
Functional Measurement Strategy of Minimum Power-Down Time
129(3)
Estimation of the Minimum Power-Down Time
132(4)
Reset During Block Activation
136(1)
Charge Recycling Scheme
137(1)
Principle of Charge Recycling Scheme
137(1)
Power Saving Capability and Experimental Verification
138(2)
Fractional Switch Activation
140(1)
Block Activation Strategies
140(10)
Single Cycle Block Activation
140(3)
Sequential Switch Activation
143(1)
Stepwise Overdrive Incrementation
144(1)
Quasi-Continuous Overdrive Incrementation
145(2)
Double Switch Scheme
147(1)
Clock Gating During Activation
148(2)
State Conservation in Power Switched Circuits
150(19)
Static State Retention Flipflops
151(7)
Summary of Static State Retention Approaches
158(1)
Dynamic State Retention FlipFlops
158(2)
Architecture of the Memory Cells
160(1)
Sense Amplifier and Slave Latch
160(1)
Boosting of the Access Devices
160(1)
Error Detection and Refresh
161(2)
Trade-off Between Propagation Delay and Retention Time in Dynamic State Retention Flipflops
163(2)
Characterization of Dynamic State Retention FlipFlop
165(4)
Conclusion
169(2)
References 171(8)
Index 179